Patents by Inventor Hsiao-Fen Wei

Hsiao-Fen Wei has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20150027642
    Abstract: Method for isolating a flexible film from a support substrate and method for fabricating an electronic device are provided. The method for isolating a flexible film from a support substrate includes providing a substrate with a top surface. A surface treatment is subjected to the top surface of the substrate, forming a top surface with detachment characteristics. A flexible film is formed on the top surface with detachment characteristics. The flexible film within the top surface with detachment characteristics is cut and isolated.
    Type: Application
    Filed: October 8, 2014
    Publication date: January 29, 2015
    Inventors: Dong-Sen CHEN, Hsiao-Fen WEI, Liang-You JIANG, Yu-Yang CHANG
  • Publication number: 20140374736
    Abstract: A gas barrier substrate including a first gas barrier layer, a substrate, and a second gas barrier layer is provided. The first gas barrier layer has a central bonding surface bonded with the substrate and a peripheral boding surface surrounding the central bonding surface. The second gas barrier layer entirely covers the substrate and the first gas barrier layer. The second gas barrier layer is bonded with the substrate and the peripheral boding surface of the first gas barrier layer, wherein a minimum distance from an edge of the substrate to an edge of the first gas barrier layer is greater than a thickness of the first gas barrier layer.
    Type: Application
    Filed: September 10, 2014
    Publication date: December 25, 2014
    Inventors: Hsiao-Fen Wei, Liang-You Jiang, Pao-Ming Tsai, Yu-Yang Chang
  • Publication number: 20140370228
    Abstract: A substrate structure including a bottom organic layer, at least one inorganic layer, at least one organic layer and at least one protruding object is provided. The at least one protruding object is protruded from an upper surface of the bottom organic layer or the organic layer. A maximum height of the protruding object protruded from the upper surface of the bottom organic layer or the organic layer is H, and a thickness of the organic layer covering the protruding object is T, wherein T?1.1 H.
    Type: Application
    Filed: May 16, 2014
    Publication date: December 18, 2014
    Applicant: Industrial Technology Research Institute
    Inventors: Hsiao-Fen Wei, Liang-You Jiang
  • Patent number: 8883053
    Abstract: Method for isolating a flexible film from a support substrate and method for fabricating an electronic device are provided. The method for isolating a flexible film from a support substrate includes providing a substrate with a top surface. A surface treatment is subjected to the top surface of the substrate, forming a top surface with detachment characteristics. A flexible film is formed on the top surface with detachment characteristics. The flexible film within the top surface with detachment characteristics is cut and isolated.
    Type: Grant
    Filed: October 1, 2009
    Date of Patent: November 11, 2014
    Assignee: Industrial Technology Research Institute
    Inventors: Dong-Sen Chen, Hsiao-Fen Wei, Liang-You Jiang, Yu-Yang Chang
  • Patent number: 8864540
    Abstract: A gas barrier substrate including a first gas barrier layer, a substrate, and a second gas barrier layer is provided. The first gas barrier layer has a central bonding surface bonded with the substrate and a peripheral boding surface surrounding the central bonding surface. The second gas barrier layer entirely covers the substrate and the first gas barrier layer. The second gas barrier layer is bonded with the substrate and the peripheral boding surface of the first gas barrier layer, wherein a minimum distance from an edge of the substrate to an edge of the first gas barrier layer is greater than a thickness of the first gas barrier layer.
    Type: Grant
    Filed: May 16, 2013
    Date of Patent: October 21, 2014
    Assignee: Industrial Technology Research Institute
    Inventors: Hsiao-Fen Wei, Liang-You Jiang, Pao-Ming Tsai, Yu-Yang Chang
  • Publication number: 20130295814
    Abstract: A gas barrier substrate including a first gas barrier layer, a substrate, and a second gas barrier layer is provided. The first gas barrier layer has a central bonding surface bonded with the substrate and a peripheral boding surface surrounding the central bonding surface. The second gas barrier layer entirely covers the substrate and the first gas barrier layer. The second gas barrier layer is bonded with the substrate and the peripheral boding surface of the first gas barrier layer, wherein a minimum distance from an edge of the substrate to an edge of the first gas barrier layer is greater than a thickness of the first gas barrier layer.
    Type: Application
    Filed: May 16, 2013
    Publication date: November 7, 2013
    Inventors: Hsiao-Fen Wei, Liang-You Jiang, Pao-Ming Tsai, Yu-Yang Chang
  • Publication number: 20110291544
    Abstract: A gas barrier substrate including a first gas barrier layer, a substrate, and a second gas barrier layer is provided. The first gas barrier layer has a central bonding surface bonded with the substrate and a peripheral boding surface surrounding the central bonding surface. The second gas barrier layer entirely covers the substrate and the first gas barrier layer. The second gas barrier layer is bonded with the substrate and the peripheral boding surface of the first gas barrier layer, wherein a minimum distance from an edge of the substrate to an edge of the first gas barrier layer is greater than a thickness of the first gas barrier layer.
    Type: Application
    Filed: September 17, 2010
    Publication date: December 1, 2011
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Hsiao-Fen Wei, Liang-You Jiang, Pao-Ming Tsai, Yu-Yang Chang
  • Publication number: 20100267203
    Abstract: Method for isolating a flexible film from a support substrate and method for fabricating an electronic device are provided. The method for isolating a flexible film from a support substrate includes providing a substrate with a top surface. A surface treatment is subjected to the top surface of the substrate, forming a top surface with detachment characteristics. A flexible film is formed on the top surface with detachment characteristics. The flexible film within the top surface with detachment characteristics is cut and isolated.
    Type: Application
    Filed: October 1, 2009
    Publication date: October 21, 2010
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Dong-Sen CHEN, Hsiao-Fen WEI, Liang-You JIANG, Yu-Yang CHANG
  • Publication number: 20100151209
    Abstract: The present invention employs the totally printable process to fabricate an organic/inorganic multi-layered laminate gas barrier film. Such totally printable process is simple with lower costs. Moreover, through the pattern design, the adhesion between the organic and inorganic layers is improved.
    Type: Application
    Filed: November 16, 2009
    Publication date: June 17, 2010
    Applicant: Industrial Technology Research Institute
    Inventors: Hsiao-Fen Wei, Liang-You Jiang, Pao-Ming Tsai, Jhen-Hao Jiang