Abstract: Halogenated isobutylene-co-paramethylstyrene polymer, preferably brominated isobutylene-co-paramethylstyrene polymer (BIMS) and blends thereof, preferably blends of isobutylene based rubber, show improved heat resistance versus butyl inner tube compositions and retain the superior barrier properties of butyl inner tube compositions versus inner tube compositions with butyl/EP blends.

Abstract: A color wheel comprisinga carrier having a central axis, a first principal surface, and a periphery, the carrier being rotatable around the central axis; and a filter assembly having a first principal surface and having the central axis as its central axis, wherein the first principal surface of the carrier is adjacent to the first principal surface of the filter assembly, the first principal surface of the carrier includes a carrier bonding zone, the first principal surface of the filter assembly includes a filter bonding zone, the carrier bonding zone and the filter bonding zone are bound together by an adhesive, a loop-shaped groove is formed around the carrier bonding zone or the filter bonding zone and is innerly apart from the periphery so that an excessive portion, if any, of the adhesive can flow into the loop-shaped groove.

Abstract: A cannon barrel is a conic hollow barrel cast from metal and includes two ends of different inner diameters. One of the ends of the conic hollow barrel having a relatively smaller inner diameter is secured to a cradle. A shot fired through the barrel gradually spreads while passing through the barrel. The explosion/impact area of the shot is thus enlarged, which could hit the target more easily.

Abstract: A color wheel comprises a motor, a plurality of filter segments and an obstructing plate. The motor has a rotating casing. Protruding from the center of an upper side of the rotating casing, there is a rotating shaft. One end of each fan-shaped filter segment is in contact with the rotating shaft, and one side of its lower surface has a formation of a glue area to be glued onto an upper side of the motor, forming a rear clearance from the upper side. The filter segments are joined to each other to become a ring shape surrounding the rotating shaft. A center hole of the ring-shaped obstructing plate is mounted on the rotating shaft, keeping a clearance from the filter segment. On the outside of the obstructing plate is a ring recess. The invention provides ways of heat insulation and radiation for the filter segments, to enhance product quality.

Abstract: A complementary code keying (CCK) demodulation system is disclosed, and more particularly relates to both of a bi-stage correlation calculation demodulation system, and a fast walsh block demodulation device at a receiver, wherein the bi-stage correlation calculation demodulation system has a characteristic of bi-stage correlation calculation in which the subsequent second-stage correlation calculations are dependent on the first-stage correlation calculation results by utilizing an incomplete orthogonal property within CCK codewords to arrange the CCK codewords operated in the first-stage correlation calculations and second-stage correlation calculations properly and respectively. Thus, the operation quantities of correlation calculations are reduced substantially, and the codeword transmitted from transmitter is resolved rapidly, so that the complexity of receiver is decreased and the demodulating speed is speeded up.

Abstract: A radiating structure of a food processor includes an outer shell and an inner shell disposed in the outer shell with a passage formed in between. The inner shell has vent holes on the top, and has a revolving member disposed above it; the revolving member has blades on a bottom, and is turnable together with the shaft of a motor of the food processor. The motor is disposed in the inner shell, and is connected to a fan disposed right above inlets of a base joined to the inner shell. When the motor is working, air is forced to travel into the inner shell via the inlets by the fan to absorb heat produced by the motor, and is forced to travel through the vent holes and the passage to the atmosphere by the blades of the revolving member, thus dissipating the heat.

Abstract: A bandpass filter includes a plurality of resonators on a printed circuit board. An input pin is connected to a first resonator of the plurality of resonators. An output pin is connected to a second resonator of the plurality of resonators. The first and second resonators are magnetically coupled to each other. The first and second resonators are coupled to other resonators using mixed coupling. The other resonators are coupled to each other using electric coupling.

Abstract: A printed bandpass filter is mounted on a precision substrate to eliminate the need for post-fabrication tuning. The filter input is capacitively coupled to a series of quarter wavelength resonators and the filter output. The quarter wavelength resonators are printed as spirals to reduce filter size. The resonators define the bandpass characteristics of the filter. The filter also weakly couples the input signal to the filter output in a manner to cancel the signal image. Mechanical clips mitigate thermal stress on solder connections when the precision substrate mounted on a second printed circuit board.

Abstract: Curable silylated copolymers based on olefin copolymers comprising at least one alpha-olefin and a vinyl aromatic monomer (alkyl styrene) are prepared by reacting the olefin copolymer with an olefinically unsaturated hydrolyzable silane in the presence of a free radical generating agent. The silylated copolymers are readily curable by contact with water (moisture) and a silanol condensation catalyst and are particularly useful as the polymeric component in sealant, caulking, adhesive and coating formulations.

Abstract: Novel PMOS-bound and NMOS-bound diodes for ESD protection, together with their application circuits, are disclosed in this invention. The PMOS-bound (or NMOS bound) diode has a PMOS (or an NMOS) structure. The source/drain region enclosed by the control gate of the PMOS (or NMOS) is used as an anode (or cathode) of the PMOS-bound (or NMOS-bound) diode. The base of the PMOS (or NMOS) is used as a cathode (or anode) of the PMOS-bound (or NMOS-bound) diode. The control gate prevents any shallow trench isolation region from forming beside the p-n junction of the PMOS-bound (or NMOS-bound) diode, such that the ESD sustaining level doesn't suffer from the formation of the STI regions. Furthermore, by ensuring proper bias to the control gate during an ESD event, the turn-on speed of the PMOS-bound or NMOS-bound diode can be increased, such that the overall ESD level of an IC chip is improved.

Abstract: Compatibilized blends of an isoolefin polymer and an unsaturated diene polymer are prepared by utilizing a compatibilizing agent comprising a block/graft copolymer containing poly- or copoly-isoolefin segments and C4 to C6 alkyl-substituted styrene polymer segments, such as poly(t-butylstyrene) segments.

Abstract: The specification discloses a device and method for manufacturing fluid bearings. The invention utilizes the electromagnetic forming method to manufacturing fluid bearings. The method uses a high speed plastic forming means to produce a dynamic pressure generating groove on the internal peripheral surface of the bearing. It further makes use of different thermal expansion coefficients for an internal mold and a raw sleeve to perform separation from the mold. Through the above-mentioned process, fluid bearings can be successfully made. This method can effectively prevent the problem springback and crease of the material during formation.

Abstract: In this invention, a novel substrate-triggered technique is proposed to effectively improve the electrostatic discharge (ESD) robustness of integrated circuit (IC) products. The ESD protection circuit derived from the substrate-triggered technique is comprised of a metal-oxide-semiconductor (MOS) transistor and an ESD detection circuit. The MOS transistor is composed of a bulk region, a gate, a source region coupled to a power rail, and a drain region couple to a pad. The source region, the bulk region and the drain region further construct a parasitic bipolar junction transistor (BJT) The ESD detection circuit is located between, and connected to, the power rail and the pad. During normal operation, the ESD detection circuit maintains the coupling of the bulk region to the first power rail. During an ESD event, the ESD detection circuit biases the bulk region to trigger the BJT thereby releasing ESD stress.

Abstract: An implanting method forms high-voltage-tolerant ESD protection devices (ESDPD) for deep-submicron CMOS process activated between LDD implanting and forming sidewall spacers. ESD-Implant (ESDI) regions are located at the ESDPD, without covering the center region under the drain contact (DC). The ESDI LDD concentration and doping profile are deep to contain drain diffusion. Regions with the ESDI have a high junction breakdown voltage (JBV) and a low junction capacitance. After forming gate sidewall spacers, implant high doping concentration ions into active D/S regions forming a shallower doping profile of the D/S diffusion. The drain has a JBV as without this ESDI, so the ESD current (ESDC) is discharged through the center junction region under the DC to bulk, far from the ESDPD surface channel region. The ESDPD sustains a high ESD level. The original drain JBV of an MOS with this ESDI method is unchanged, i.e.

Abstract: A the compact disk packing machine includes a base having a box providing device for move empty boxes to a box opening device which opens the empty boxes one by one. A transferring device transfers the opened boxes to a disk providing device and a disk positioning device to put a compact disk in each of the opening boxes. A sheet putting device puts a sheet of commercial in the open boxes and a closing device closes the boxes. The boxes having a compact disk and a sheet of commercial are transferred to a collection device and piled up.

Abstract: The present invention relates generally to rubber compositions having improved green strength and thermal stability. These compositions comprise blends of a first rubber component, an isoolefin/para-alkylstyrene copolymer component, and an amine component reacted in situ prior to curing. The present invention further relates to methods for preparing these compositions.

Abstract: Polyisobutylene (PIB) functionalized with terminal reactive unsaturation is disclosed. Carbocationically polymerized monohalogen-terminated PIB is dehydrohalogenated in a hydrocarbon solvent using an alkoxide of the formula RO-M wherein R is alkyl of at least 5 carbon atoms and M is alkali metal. The PIB obtained has terminal unsaturation which is 100% in the reactive ‘exo’ form which can be converted to succinic anhydride groups (PIB-SA) by the ene reaction with maleic anhydride. The PIB-SA is reactive with amine functional dendrimers to obtain a star-branched polymer having a dendrimer core and PIB branches joined by succinimide linkages. Blends of the star-branched polymer with polypropylene have improved energy absorption properties and controllable moisture/oxygen permeabilities useful in films.

Abstract: Polyisobutylene (PIB) functionalized with terminal reactive unsaturation is disclosed. Carbocationically polymerized monohalogen-terminated PIB is dehydrohalogenated in a hydrocarbon solvent using an alkoxide of the formula RO-M wherein R is alkyl of at least 5 carbon atoms and M is alkali metal. The PIB obtained has terminal unsaturation which is 100% in the reactive ‘exo’ form which can be converted to succinic anhydride groups (PIB-SA) by the ene reaction with maleic anhydride. The PIB-SA is reactive with amine functional dendrimers to obtain a star-branched polymer having a dendrimer core and PIB branches joined by succinimide linkages. Blends of the star-branched polymer with polypropylene have improved energy absorption properties and controllable moisture/oxygen permeabilities useful in films.

Abstract: A the compact disk packing machine includes a base having a box providing device for move empty boxes to a box opening device which opens the empty boxes one by one. A transferring device transfers the opened boxes to a disk providing device and a disk positioning device to put a compact disk in each of the opening boxes. A sheet putting device puts a sheet of commercial in the open boxes and a closing device closes the boxes. The boxes having a compact disk and a sheet of commercial are transferred to a collection device and piled up.

Abstract: An implanting method forms high-voltage-tolerant ESD protection devices (ESDPD) for deep-submicron CMOS process activated between LDD implanting and forming sidewall spacers. ESD-Implant (ESDI) regions are located at the ESDPD, without covering the center region under the drain contact (DC). The ESDI LDD concentration and doping profile are deep to contain drain diffusion. Regions with the ESDI have a high junction breakdown voltage (JBV) and a low junction capacitance. After forming gate sidewall spacers, implant high doping concentration ions into active D/S regions forming a shallower doping profile of the D/S diffusion. The drain has a JBV as without this ESDI, so the ESD current (ESDC) is discharged through the center junction region under the DC to bulk, far from the ESDPD surface channel region. The ESDPD sustains a high ESD level. The original drain JBV of an MOS with this ESDI method is unchanged, i.e.