Patents by Inventor Hsien-Cheng Wang

Hsien-Cheng Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • NOVEL PHOTORESIST MATERIALS AND PHOTOLITHOGRAPHY PROCESSES
    Publication number: 20110165515
    Abstract: A material for use in lithography processing includes a polymer that turns soluble to a base solution in response to reaction with acid and a plurality of magnetically amplified generators (MAGs) each having a magnetic element and each decomposing to form acid bonded with the magnetic element in response to radiation energy.
    Type: Application
    Filed: March 17, 2011
    Publication date: July 7, 2011
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Hsien-Cheng Wang, Chin-Hsiang Lin, H. J. Lee, Ching-Yu Chang, Hua-Tai Lin, Burn Jeng Lin
  • Photoresist materials and photolithography process
    Patent number: 7972761
    Abstract: A material for use in lithography processing includes a polymer that turns soluble to a base solution in response to reaction with acid and a plurality of magnetically amplified generators (MAGs) each having a magnetic element and each decomposing to form acid bonded with the magnetic element in response to radiation energy.
    Type: Grant
    Filed: August 4, 2006
    Date of Patent: July 5, 2011
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hsien-Cheng Wang, Chin-Hsiang Lin, H. J. Lee, Ching-Yu Chang, Hua-Tai Lin, Burn Jeng Lin
  • LITHOGRAPHY METHOD AND APPARATUS FOR SEMICONDUCTOR DEVICE FABRICATION
    Publication number: 20100255679
    Abstract: Provided is a lithography system operation to include a first aperture or a second aperture. Each of the first and second apertures has two pairs of radiation-transmitting regions where one pair of radiation-transmitting regions are larger than a second pair. For an aperture, each pair of radiation-transmitting regions are on different diametrical axis. In an embodiment, one aperture is used for x-dipole illumination and the second aperture is used for y-dipole illumination.
    Type: Application
    Filed: April 2, 2009
    Publication date: October 7, 2010
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Hsien-Cheng Wang, Hung Chang Hsieh, Shih-Che Wang, Ping Chieh Wu, Wen-Chun Huang, Ming-Chang Wen
  • EXPOSURE APPARATUS AND METHOD FOR PHOTOLITHOGRAPHY PROCESS
    Publication number: 20090103068
    Abstract: Provided is an exposure apparatus including a variable focusing device. The variable focusing device may include a transparent membrane that may be deformed in the presence of an electric field. The deformation of the transparent membrane may allow the focus length of a radiation beam to be modified. In an embodiment, the variable focusing device may be modulated such that a radiation beam having a first focus length is provided for a first position on an exposure target and a radiation beam having a second focus length is provided for a second position on the exposure target. A method and computer-readable medium are also provided.
    Type: Application
    Filed: October 19, 2007
    Publication date: April 23, 2009
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Vincent Yu, Hsien-Cheng Wang, Hung-Chang Hsieh
  • METHOD AND APPARATUS FOR CLEANING A SUBSTRATE
    Publication number: 20080156346
    Abstract: A method for photolithography processing includes forming a photoresist layer on a surface of a substrate, baking the substrate to remove solvents from the photoresist layer, cleaning an edge of the substrate with a tape, and exposing the photoresist layer with radiation energy. The tape includes a cleaning material. The tape is positioned proximate to or in contact with the edge of the substrate while the substrate is rotating.
    Type: Application
    Filed: December 28, 2006
    Publication date: July 3, 2008
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Hsien-Cheng Wang, Hung Chang Hsieh, Tsiao-Chen Wu, Jian-Hong Chen
  • NOVEL PHOTORESIST MATERIALS AND PHOTOLITHOGRAPHY PROCESS
    Publication number: 20080030692
    Abstract: A material for use in lithography processing includes a polymer that turns soluble to a base solution in response to reaction with acid and a plurality of magnetically amplified generators (MAGs) each having a magnetic element and each decomposing to form acid bonded with the magnetic element in response to radiation energy.
    Type: Application
    Filed: August 4, 2006
    Publication date: February 7, 2008
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Hsien-Cheng WANG, Chin-Hsiang LIN, H. J. LEE, Ching-Yu CHANG, Hua-Tai LIN, Burn Jeng LIN