Abstract: A wafer structure is disclosed and includes a chip substrate and a plurality of inkjet chips. The chip substrate is a silicon substrate fabricated by a semiconductor process. At least one inkjet chip is directly formed on the chip substrate by the semiconductor process and diced into the at least one inkjet chip for inkjet printing. Each of the inkjet chip includes a plurality of ink-drop generators produced by a semiconductor process and formed on the chip substrate. Each of the ink-drop generators includes a thermal-barrier layer, a resistance heating layer, a conductive layer, a protective layer, a barrier layer, an ink-supply chamber and a nozzle.

Abstract: A wafer structure is disclosed and includes a chip substrate and a plurality of inkjet chips. The chip substrate is a silicon substrate fabricated by a semiconductor process on a wafer of at least 12 inches. The inkjet chips include at least one first inkjet chip and at least one second inkjet chip directly formed on the chip substrate by the semiconductor process, respectively, and the plurality of inkjet chips are diced into the at least one first inkjet chip and the at least one second inkjet chip for inkjet printing. Each of the first inkjet chip and the second inkjet chip includes a plurality of ink-drop generators produced by a semiconductor process and formed on the chip substrate. Each of the ink-drop generators includes a thermal-barrier layer, a resistance heating layer, a conductive layer, a protective layer, a barrier layer, an ink-supply chamber and a nozzle.

Abstract: The present disclosure provides a control method of a fluid device. The control method includes the steps of (a) providing the fluid device, which includes a plurality of flow guiding units manufactured by a micro-electro-mechanical-system process; (b) dividing the flow guiding units into a plurality of groups, which are electrically connected to and controlled by a control module; and (c) generating a driving signal by the control module for a corresponding one of the groups, wherein the control module generates a high level signal to a specific one of the groups, so that the flow guiding units of the specific one of the groups are driven to transport fluid, and thereby controlling the fluid device to discharge a specific amount of fluid.

Abstract: A wafer structure including a chip substrate and plural inkjet chips is disclosed. The chip substrate is a silicon substrate fabricated by a semiconductor process on a wafer of at least 12 inches. The inkjet chips are formed on the chip substrate by the semiconductor process and diced into the first inkjet chip and the second inkjet chip. Each of the first inkjet chip and the second inkjet chip includes plural ink-drop generators. Each of the ink-drop generators includes a nozzle. A diameter of the nozzle is in a range between 0.5 micrometers and 10 micrometers. A volume of an inkjet drop discharged from the nozzle is in a range between 1 femtoliter and 3 picoliters. The ink-drop generators form plural longitudinal axis array groups having a pitch and form plural horizontal axis array groups having a central stepped pitch equal to 1/600 inches or less.

Abstract: A wafer structure is disclosed and includes a chip substrate and plural inkjet chips having plural ink-drip generators. Each ink-drop generator includes a thermal-barrier layer, a resistance heating layer and a protective layer. The thermal-barrier layer is formed on the chip substrate, the resistance heating layer is formed on the thermal-barrier layer, a part of the protective layer is formed on the resistance heating layer, and the barrier layer is formed on the protective layer. The ink-supply chamber has a bottom in communication with the protective layer, and a top in communication with the nozzle. The thermal-barrier layer has a thickness of 500˜5000 angstroms, the protective layer has a thickness of 150˜3500 angstroms, the resistance heating layer has a thickness of 100˜500 angstroms, the resistance heating layer has a length of 5˜30 microns, and the resistance heating layer has a width of 5˜10 microns.

Abstract: A wafer structure is disclosed and includes a chip substrate and at least one inkjet chip having plural ink-drip generators. Each ink-drop generator includes a thermal-barrier layer, a resistance heating layer and a protective layer. The thermal-barrier layer is formed on the chip substrate, the resistance heating layer is formed on the thermal-barrier layer, a part of the protective layer is formed on the resistance heating layer, and the barrier layer is formed on the protective layer. The ink-supply chamber has a bottom in communication with the protective layer, and a top in communication with the nozzle. The thermal-barrier layer has a thickness of 500˜5000 angstroms, the protective layer has a thickness of 150˜3500 angstroms, the resistance heating layer has a thickness of 100˜500 angstroms, the resistance heating layer has a length of 5˜30 microns, and the resistance heating layer has a width of 5˜10 microns.

Abstract: A wafer structure is disclosed and includes a chip substrate and an inkjet chip. The chip substrate is a silicon substrate fabricated by a semiconductor process on a wafer of 12 inches. The inkjet chips are formed on the chip substrate by the semiconductor process and diced into the inkjet chip. The inkjet chip includes plural ink-drop generators generated by the semiconductor process on the chip substrate. Each of the plurality of ink-drop generators includes a nozzle. A diameter of the nozzle is in a range between 0.5 micrometers and 10 micrometers. A volume of an inkjet drop discharged from the nozzle is in a range between 1 femtoliter and 3 picoliters. The ink-drop generators form plural longitudinal axis array groups having a pitch and plural horizontal axis array groups having a central stepped pitch equal to or less than 1/600 inches.

Abstract: A wafer structure is disclosed and includes a chip substrate and a plurality of inkjet chips. The chip substrate is a silicon substrate which is fabricated by a semiconductor process on a wafer of at least 12 inches. The plurality of inkjet chips include at least one first inkjet chip and at least one second inkjet chip. The plurality of inkjet chips are directly formed on the chip substrate by the semiconductor process, respectively, and diced into the at least one first inkjet chip and the at least one second inkjet chip, to be implemented for inkjet printing.

Abstract: A wafer structure is disclosed and includes a chip substrate and at least one inkjet chip. The chip substrate is a silicon substrate fabricated by a semiconductor process on a wafer of at least 12 inches. The inkjet chip is directly formed on the chip substrate by the semiconductor process, whereby the wafer is diced, and the inkjet chip is produced, to be implemented for inkjet printing. The inkjet chip includes plural ink-drop generators produced by the semiconductor process and formed on the chip substrate. The ink-drop generators are arranged in a longitudinal direction to form plural longitudinal axis array groups having a pitch maintained between two adjacent ink-drop generators in the longitudinal direction, and arranged in a horizontal direction to form plural horizontal axis array groups having a central stepped pitch equal to or less than 1/600 inches maintained between two adjacent ink-drop generators in the horizontal direction.

Abstract: A wafer structure is disclosed and includes a chip substrate and at least one inkjet chip. The chip substrate is a silicon substrate fabricated by a semiconductor process. The inkjet chip is directly formed on the chip substrate by the semiconductor process, whereby the wafer structure is diced, and the inkjet chip is produced, to be implemented for inkjet printing. The inkjet chip includes a plurality of ink-drop generators produced by the semiconductor process and formed on the chip substrate. Each of the ink-drop generators includes a barrier layer, an ink-supply chamber and a nozzle, and the ink-supply chamber and the nozzle are integrally formed in the barrier layer.

Abstract: A wafer structure is disclosed and includes a chip substrate and a plurality of inkjet chips. The chip substrate is a silicon substrate which is fabricated by a semiconductor process on a wafer of at least 12 inches. The plurality of inkjet chips include at least one first inkjet chip and at least one second inkjet chip. The plurality of inkjet chips are directly formed on the chip substrate by the semiconductor process, respectively, and diced into the at least one first inkjet chip and the at least one second inkjet chip, to be implemented for inkjet printing. Each of the first inkjet chip and the second inkjet chip includes a plurality of ink-drop generators produced by the semiconductor process and formed on the chip substrate.

Abstract: A wafer structure is disclosed and includes a chip substrate and at least one inkjet chip. The chip substrate is a silicon substrate which is fabricated by a semiconductor process on a wafer of at least 12 inches. The at least one inkjet chip is directly formed on the chip substrate by the semiconductor process, and the wafer is diced into the at least one inkjet chip, to be implemented for inkjet printing.

Abstract: A wafer structure is disclosed and includes a chip substrate and a plurality of inkjet chips. The chip substrate is a silicon substrate which is fabricated by a semiconductor process. The plurality of inkjet chips include at least one first inkjet chip and at least one second inkjet chip. The plurality of inkjet chips are directly formed on the chip substrate by the semiconductor process, respectively, and diced into the at least one first inkjet chip and the at least one second inkjet chip, to be implemented for inkjet printing. Each of the first inkjet chip and the second inkjet chip includes a plurality of ink-drop generators produced by the semiconductor process and formed on the chip substrate. Each ink-drop generator includes a barrier layer, an ink-supply chamber and a nozzle. The ink-supply chamber and the nozzle are integrally formed in the barrier layer.

Abstract: A nasal-plug filter device including a device body, a filter, a first actuator, a second actuator, and a gas sensor is provided. The device body has a ventilating channel, and the ventilating channel has an inlet end and an outlet end. The filter is disposed at the outlet end. The first actuator is disposed at the inlet end for being driven to transmit gas outside the device body into the device body. The second actuator is stacked on and bonded to the first actuator, and the second actuator is driven to transmit the gas transmitted by the first actuator to the filter to be filtered and purified. The gas sensor is disposed at the outlet end for detecting a gas quality of the gas at the outlet end. A connection element may be provided for connecting two nasal-plug filter devices with each other.

Abstract: An actuating and sensing module includes a substrate, at least one sensor and at least one actuating device. The at least one sensor is disposed on the substrate. The at least one actuating device is disposed on the substrate, and has at least one guiding channel between the actuating device and the substrate. The at least one guiding channel is disposed on one side of the at least one sensor. When the at least one actuating device is enabled, a fluid is transferred to the at least one sensor through the at least one guiding channel, so that the fluid is sensed by the at least one sensor.

Abstract: A gas detection device manufactured by a semiconductor process includes a substrate, a microelectromechanical element, a light-emitting element, a particle-sensing element, a gas-sensing element, a driving-chip element and an encapsulation layer. The driving-chip element controls driving operations of the microelectromechanical element, the light-emitting element, the particle-sensing element and the gas-sensing element, respectively. When the microelectromechanical element is enabled to actuate transportation of gas, the gas is introduced into the gas detection device through an inlet aperture of the substrate. Scattered light spots generated by the light beam of the light-emitting element irradiating on suspended particles contained in the gas are received by the particle-sensing element to generate a detection datum of the suspended particles. The gas-sensing element detects the gas passing through and generates a detection datum of hazardous gas contained in the gas.

Abstract: A heterogeneous integration chip of a micro fluid actuator is disclosed and includes a first substrate, a first insulation layer, a first conductive layer, a piezoelectric layer, a second conductive layer, a second substrate, a control element, a perforated trench and a conductor. The first substrate includes a first chamber. The first insulation layer is disposed on the first substrate. The first conductive layer is disposed on the first insulation layer and includes an electrode pad. The piezoelectric layer and the second conductive layer are stacked on the first conductive layer sequentially. The second substrate is assembled to the first substrate through a bonding layer to define a second chamber and includes an orifice, a fluid flowing channel and a third chamber. The control element is disposed in the second substrate. The perforated trench filled with the conductor is penetrated from the electrode pad to the second substrate.

Abstract: A narrow type inkjet print head chip is disclosed and includes a silicon substrate, an active component layer and a passive component layer. The active component layer is stacked on the silicon substrate and includes plural ESD protection units, plural encoder switches, plural discharge protection units and plural heater switches. The ESD protection units, the encoder switches, the discharge protection units and the heater switches are disposed in each of at least two high-precision regions of the active component layer. The corresponding positions and quantities of these components are the same in the at least two high-precision regions. The passive component layer is stacked on the active component layer and includes plural heaters, plural electrode pads, plural encoders and plural circuit traces. The circuit traces are electrically connected to the ESD protection units, the encoder switches, the heater switches, the heaters, the electrode pads and the encoders.

Abstract: A manufacturing method of narrow type inkjet print head chip is provided and includes steps of: (S1) providing a silicon substrate; (S2) arranging and disposing an active component layer by utilizing a first type photomask on at least two high-precision regions of each of a plurality of inkjet print head chip regions on the silicon substrate; (S3) arranging and disposing a passive component layer by utilizing a second type photomask on the active component layer; and (S4) cutting the silicon substrate according to the inkjet print head chip regions so as to form the plurality of narrow type inkjet print head chips.

Abstract: A manufacturing method of micro fluid actuator includes: providing a substrate; depositing a first protection layer on a first surface of the substrate; depositing an actuation region on the first protection layer; applying lithography dry etching to a portion of the first protection layer to produce at least one first protection layer flow channel; applying wet etching to a portion of a main structure of the substrate to produce a chamber body and a first polycrystalline silicon flow channel region, while a region of an oxidation layer middle section of the main structure is not etched; applying reactive-ion etching to a portion of a second surface of the substrate to produce at least one substrate silicon flow channel; and applying dry etching to a portion of a silicon dioxide layer to produce at least one silicon dioxide flow channel.