Abstract: Provided are a PoP device and a method of manufacturing the same. The PoP device includes a first package structure and a second package structure. The first package structure includes a die, a through integrated fan-out via (TIV), an encapsulant, and a film. The TIV is aside the die. The encapsulant encapsulates sidewalls of the die and sidewalls of the TIV. The film is over the TIV and the encapsulant, and aside the die. The second package structure is connected to the first package structure through a connector. The connector penetrates through the film to electrically connected to the TIV.

Abstract: A semiconductor package includes a first package component include a first side, a second side opposite to the first side, and a plurality of recessed corners over the first side. The semiconductor package further includes a plurality of first stress buffer structures disposed at the recessed corners, and each of the first stress buffer structures has a curved surface. The semiconductor package further includes a second package component connected to the first package component and a plurality of connectors disposed between the first package component and the second package component. The connectors are electrically coupled the first package component and the second package component. The semiconductor package further includes an underfill material between the first package component and the second package component, and at least a portion of the curved surface of the first stress buffer structures is in contact with and embedded in the underfill material.

Abstract: An integrated fan out package on package architecture is utilized along with de-wetting structures in order to reduce or eliminated delamination from through vias. In embodiments the de-wetting structures are titanium rings formed by applying a first seed layer and a second seed layer in order to help manufacture the vias. The first seed layer is then patterned into a ring structure which also exposes at least a portion of the first seed layer.

Abstract: A method includes forming a release film over a carrier, forming a metal post on the release film, encapsulating the metal post in an encapsulating material, performing a planarization on the encapsulating material to expose the metal post, forming a redistribution structure over the encapsulating material and the metal post, decomposing a first portion of the release film to separate a second portion of the release film from the carrier, and forming an opening in the release film to expose the metal post.

Abstract: Provided are a PoP device and a method of manufacturing the same. The PoP device includes a first package structure and a second package structure. The first package structure includes a die, a through integrated fan-out via (TIV), an encapsulant, and a film. The TIV is aside the die. The encapsulant encapsulates sidewalls of the die and sidewalls of the TIV. The film is over the TIV and the encapsulant, and aside the die. The second package structure is connected to the first package structure through a connector. The connector penetrates through the film to electrically connected to the TIV.

Abstract: A semiconductor package includes a first package component include a first side, a second side opposite to the first side, and a plurality of recessed corners over the first side. The semiconductor package further includes a plurality of first stress buffer structures disposed at the recessed corners, and each of the first stress buffer structures has a curved surface. The semiconductor package further includes a second package component connected to the first package component and a plurality of connectors disposed between the first package component and the second package component. The connectors are electrically coupled the first package component and the second package component. The semiconductor package further includes an underfill material between the first package component and the second package component, and at least a portion of the curved surface of the first stress buffer structures is in contact with and embedded in the underfill material.

Abstract: A method includes forming a release film over a carrier, forming a metal post on the release film, encapsulating the metal post in an encapsulating material, performing a planarization on the encapsulating material to expose the metal post, forming a redistribution structure over the encapsulating material and the metal post, decomposing a first portion of the release film to separate a second portion of the release film from the carrier, and forming an opening in the release film to expose the metal post.

Abstract: A method includes forming a release film over a carrier, forming a metal post on the release film, encapsulating the metal post in an encapsulating material, performing a planarization on the encapsulating material to expose the metal post, forming a redistribution structure over the encapsulating material and the metal post, decomposing a first portion of the release film to separate a second portion of the release film from the carrier, and forming an opening in the release film to expose the metal post.

Abstract: A semiconductor device package includes a substrate, a semiconductor chip, a first ring structure and a second ring structure. The substrate includes a surface. The semiconductor chip is over the surface of the substrate. The first ring structure is over the surface of the substrate. The second ring structure is over the surface of the substrate, wherein the first ring structure is between the semiconductor chip and the second ring structure.