Abstract: A photoelectric device includes a target substrate, a circuit pattern layer disposed on the target substrate, a plurality of micro photoelectric elements electrically connected to the circuit pattern layer, and a supplemental repair element electrically connected to the circuit pattern layer. The target substrate is configured with a plurality of connection positions and a repair position disposed with an offset with relative to a corresponding one of the connection positions. The offset is greater than or equal to zero. The micro photoelectric elements are individually disposed on at least a part of the connection positions of the target substrate. The supplemental repair element has an electrode disposed on the repair position of the target substrate, and the electrode is connected to the circuit pattern layer. On the target substrate, the supplemental repair element is arbitrary with respect to the micro photoelectric elements.

Abstract: A resin composition is provided. The resin composition comprises the following components: (A) epoxy resin; (B) a cross-linking agent; (C) bismaleimide resin (BMI) represented by the following formula (I): wherein R1 is an organic group; and (D) a resin represented by the following formula (II): wherein n is an integer of 1 to 10.

Abstract: A method of using an optoelectronic semiconductor stamp to manufacture an optoelectronic semiconductor device comprises the following steps: a preparation step: preparing at least one optoelectronic semiconductor stamp group and a target substrate, wherein each optoelectronic semiconductor stamp group comprises at least one optoelectronic semiconductor stamp, each optoelectronic semiconductor stamp comprises a plurality of optoelectronic semiconductor components disposed on a heat conductive substrate, each optoelectronic semiconductor component has at least one electrode, and the target substrate has a plurality of conductive portions; an align-press step: aligning and attaching at least one optoelectronic semiconductor stamp to the target substrate, so that the electrodes are pressed on the corresponding conductive portions; and a bonding step: electrically connecting the electrodes to the corresponding conductive portions.

Abstract: A method of medical image registration is to be implemented by a computer device, and includes steps of: obtaining an ultrasound target image corresponding to an area of interest in an ultrasound image; for each of multiple computed tomography (CT) images, obtaining a CT candidate image that corresponds to an area of interest in the CT image; for each of the CT candidate images, calculating a similarity between the CT candidate image and the ultrasound target image; making one of the CT candidate images that corresponds to the greatest similarity among the CT candidate images serve as a CT target image; and performing image registration on the ultrasound target image and the CT target image.

Abstract: An electronic detection interface comprises a substrate structure and a plurality of detection units in array. The substrate structure includes a circuit film, which comprises a plurality of circuit units in array. The detection units are disposed on a surface of the substrate structure, and are corresponded to the circuit units in a respect manner. Each of the detection units includes at least one resilient conductive pillar, which is electrically connected to each of the circuit units.

Abstract: A target substrate with micro semiconductor structures is manufactured by following steps of: attaching a pre-adhesive layer on a target substrate; patterning the adhesive layer to form a plurality of micro contact protrusions; and using the target substrate to perform a selective batch pickup procedure to pick up a plurality of micro semiconductor structures so as to form the target substrate with micro semiconductor structures.

Abstract: A pre-conductive array disposed on a target circuit substrate comprises a plurality of conductive electrode groups disposed on the target circuit substrate, and at least a conductive particle dispose on each of conductive electrodes of a part or all of the conductive electrode groups. The at least a conductive particle and the corresponding conductive electrode form a pre-conductive structure, and the pre-conductive structures form the pre-conductive array.

Abstract: A micro semiconductor stacked structure includes at least two stacked structure array units, wherein one stacked structure array unit is stacked on the other stacked structure array unit. In particular, the stacked structure array unit is stacked on the other stacked structure array unit along a vertical direction. Each stacked structure array unit includes a substrate, a conductive pattern layer disposed on the substrate, and a plurality of micro semiconductor devices disposed on the substrate and electrically connected to the conductive pattern layer.

Abstract: A luminance compensation method of a light-emitting device is disclosed. The light-emitting device has a plurality of light-emitting elements. The luminance compensation method includes following steps of: obtaining a position of at least one of the light-emitting elements in a brightness anomalous status; and changing a brightness of at least one of the light-emitting elements disposed adjacent to the light-emitting element in the brightness anomalous status for compensating a brightness of the light-emitting elements in the brightness anomalous status.

Abstract: A display device has a plurality of sub-pixels, and includes a circuit substrate, a plurality of micro light-emitting semiconductor elements, a light conversion layer and an opposite substrate. The micro light-emitting semiconductor elements are disposed separately on the circuit substrate and configured corresponding to the sub-pixels. The light conversion layer has a plurality of light conversion portions disposed respectively corresponding to at least partial of the micro light-emitting semiconductor elements. The light emitted from the micro light-emitting semiconductor element corresponding to the sub-pixel passes through the light conversion portion to generate white light. The opposite substrate is disposed at one side of the light conversion layer away from the circuit substrate. In another display device, the light emitted from the micro light-emitting semiconductor element passes through the light conversion layer to generate white light.

Abstract: A manufacturing method of an optoelectronic semiconductor device includes: providing a matrix substrate, which comprises a substrate and a matrix circuit disposed on the substrate; transferring a plurality of micro-sized optoelectronic semiconductor elements from a temporary substrate to the matrix substrate, wherein the micro-sized optoelectronic semiconductor elements are separately disposed on the matrix substrate, and at least one electrode of each micro-sized optoelectronic semiconductor element is electrically connected with the matrix circuit; forming a protective layer completely covering the micro-sized optoelectronic semiconductor elements, wherein the height of the protective layer is greater than the height of the micro-sized optoelectronic semiconductor elements; and grinding the protective layer until a residual on a back surface of each micro-sized optoelectronic semiconductor element and the back surface are removed to expose a new surface.

Abstract: An optoelectronic semiconductor device includes an epitaxial substrate and a plurality of microsized optoelectronic semiconductor elements. The microsized optoelectronic semiconductor elements are disposed separately and disposed on a surface of the epitaxial substrate. A length of a side of each of the microsized optoelectronic semiconductor elements is between 1 ?m and 100 ?m, and a minimum interval between two adjacent microsized optoelectronic semiconductor elements is 1 ?m.

Abstract: A pre-conductive array disposed on a target circuit substrate comprises a plurality of conductive electrode groups disposed on the target circuit substrate, and at least a conductive particle dispose on each of conductive electrodes of a part or all of the conductive electrode groups. The at least a conductive particle and the corresponding conductive electrode form a pre-conductive structure, and the pre-conductive structures form the pre-conductive array.

Abstract: A method of batch transferring micro semiconductor structures is provided for effectively and efficiently picking up a batch of or a large amount of micro structures and transferring them to a target substrate, so it can be widely applied in transferring a lot of various micro semiconductor structures. The method includes steps of: attaching an adhesive material to a plurality of array-type micro semiconductor structures; and providing a roll-to-attach mechanism for alternately processing linear contacts between the array-type micro semiconductor structures and a target substrate. The array-type micro semiconductor structures are optionally picked up in batch from the adhesive material and transferred in batch to the target substrate as the linear contacts are alternately processed.

Abstract: A pre-conductive array disposed on a target circuit substrate comprises a plurality of conductive electrode groups disposed on the target circuit substrate, and at least a conductive particle dispose on each of conductive electrodes of a part or all of the conductive electrode groups. The at least a conductive particle and the corresponding conductive electrode form a pre-conductive structure, and the pre-conductive structures form the pre-conductive array.

Abstract: A manufacturing method of an optoelectronic semiconductor device includes: providing a matrix substrate, which comprises a substrate and a matrix circuit disposed on the substrate; transferring a plurality of micro-sized optoelectronic semiconductor elements from a temporary substrate to the matrix substrate, wherein the micro-sized optoelectronic semiconductor elements are separately disposed on the matrix substrate, and at least one electrode of each micro-sized optoelectronic semiconductor element is electrically connected with the matrix circuit; forming a protective layer completely covering the micro-sized optoelectronic semiconductor elements, wherein the height of the protective layer is greater than the height of the micro-sized optoelectronic semiconductor elements; and grinding the protective layer until a residual on a back surface of each micro-sized optoelectronic semiconductor element and the back surface are removed to expose a new surface.

Abstract: An optoelectronic semiconductor stamp and a manufacturing method thereof, and an optoelectronic semiconductor device are disclosed. The manufacturing method comprises the following steps: pressing an optoelectronic semiconductor substrate to an UV tape, wherein the electrodes of a plurality of optoelectronic semiconductor components are adhered to the UV tape; removing the epitaxial substrate, wherein at least a part of the optoelectronic semiconductor components are adhered to the UV tape; decreasing adhesion of at least a part of the UV tape; and picking up at least a part of the optoelectronic semiconductor components corresponding to the part of the UV tape with reduced adhesion by a heat conductive substrate, wherein the part of the optoelectronic semiconductor components corresponding to the part of the UV tape with reduced adhesion is removed from the UV tape so as to obtain an optoelectronic semiconductor stamp.

Abstract: A luminance compensation method of a light-emitting device is disclosed. The light-emitting device has a plurality of light-emitting elements. The luminance compensation method includes following steps of: obtaining a position of at least one of the light-emitting elements in a brightness anomalous status; and changing a brightness of at least one of the light-emitting elements disposed adjacent to the light-emitting element in the brightness anomalous status for compensating a brightness of the light-emitting elements in the brightness anomalous status.

Abstract: A display device has a plurality of sub-pixels, and includes a circuit substrate, a plurality of micro light-emitting semiconductor elements, a light conversion layer and an opposite substrate. The micro light-emitting semiconductor elements are disposed separately on the circuit substrate and configured corresponding to the sub-pixels. The light conversion layer has a plurality of light conversion portions disposed respectively corresponding to at least partial of the micro light-emitting semiconductor elements. The light emitted from the micro light-emitting semiconductor element corresponding to the sub-pixel passes through the light conversion portion to generate white light. The opposite substrate is disposed at one side of the light conversion layer away from the circuit substrate. In another display device, the light emitted from the micro light-emitting semiconductor element passes through the light conversion layer to generate white light.

Abstract: A pre-conductive array disposed on a target circuit substrate comprises a plurality of conductive electrode groups disposed on the target circuit substrate, and at least a conductive particle dispose on each of conductive electrodes of a part or all of the conductive electrode groups. The at least a conductive particle and the corresponding conductive electrode form a pre-conductive structure, and the pre-conductive structures form the pre-conductive array.