Abstract: Devices include a substrate, a collector layer, and an emitter layer positively biased relative to the collector. Devices further include a semiconductor layer located between the collector and the emitter. The semiconductor layer includes an organic semiconductor polymer with a donor-acceptor structure.

Abstract: Devices include a substrate, a collector layer, and an emitter layer positively biased relative to the collector. Devices further include a semiconductor layer located between the collector and the emitter. The semiconductor layer includes an organic semiconductor polymer with a donor-acceptor structure.

Abstract: A gas sensor for sensing a gas in a humid environment includes a first electrode layer, a second electrode layer that is spaced apart from the first electrode layer, and a gas sensing layer that electrically interconnects the first electrode layer and the second electrode layer. The gas sensing layer is made of a hygroscopic electrically insulating material.

Abstract: A gas sensor includes a first electrode, a gas detecting layer disposed on the first electrode, and an electric-conduction enhanced electrode unit being electrically connected to the first electrode and the gas detecting layer. The electric-conduction enhanced electrode unit includes an electric-conduction enhancing layer and a second electrode electrically connected to the electric-conduction enhancing layer. The electric-conduction enhancing layer is electrically connected to the gas detecting layer and is made of an electrically conductive organic material.

Abstract: An organic light-emitting device includes a first electrode layer, an emission layer, an electron transporting layer, an electron injection layer, and a second electrode layer sequentially formed from bottom to top. The emission layer includes a guest light-emitting material, a first phenyl phosphine oxide derivative and a hole transporting material. The electron transporting layer includes a second phenyl phosphine oxide derivative and a third phenyl phosphine oxide derivative different from the second phenyl phosphine oxide derivative. One of the second phenyl phosphine oxide derivative and the third phenyl phosphine oxide derivative is identical to the first phenyl phosphine oxide derivative. The electron injection layer includes an alkaline metal compound.

Abstract: Devices include a substrate, a collector layer, and an emitter layer positively biased relative to the collector. Devices further include a semiconductor layer located between the collector and the emitter. The semiconductor layer includes an organic semiconductor polymer with a donor-acceptor structure.

Abstract: A gas sensor includes a first electrode, a gas detecting layer disposed on the first electrode, and an electric-conduction enhanced electrode unit being electrically connected to the first electrode and the gas detecting layer. The electric-conduction enhanced electrode unit includes an electric-conduction enhancing layer and a second electrode electrically connected to the electric-conduction enhancing layer. The electric-conduction enhancing layer is electrically connected to the gas detecting layer and is made of an electrically conductive organic material.

Abstract: Described herein are electronics that incorporate heterocyclic organic compounds. More specifically, described herein are organic electronics systems that are combined with donor-acceptor organic semiconductors, along with methods for making such devices, and uses thereof.

Abstract: A device for analyzing gas emitted from skin includes: an enclosure for collecting the gas emitted from skin, the enclosure having: an inlet through which a carrier gas is flown; and an outlet through which the carrier gas and the gas emitted from skin is flown into a vertical gas sensor, such that the vertical gas sensor has: a substrate; a collector layer; an emitter layer positively biased relative to the collector; a metal grid with a metal layer having openings, the metal grid located in between, but not in direct contact with, the collector and emitter; and an organic semiconductor (OSC) layer located in between the collector and emitter.

Abstract: A gas sensor for sensing a gas in a humid environment includes a first electrode layer, a second electrode layer that is spaced apart from the first electrode layer, and a gas sensing layer that electrically interconnects the first electrode layer and the second electrode layer. The gas sensing layer is made of a hygroscopic electrically insulating material.

Abstract: A gas sensor includes a first electrode layer, a second electrode layer, and a gas sensing layer. The second electrode layer is spaced apart from the first electrode layer, has two electrode surfaces oppositely of each other, and is formed with a plurality of first through holes each extending through the two electrode surfaces. The gas sensing layer electrically interconnects the first electrode layer and the second electrode layer, and is made from a composition that includes a thiophene-based compound and a nitrogen-containing polar compound.

Abstract: Described herein are ultrasensitive gas sensors based on a vertical-channel organic semiconductor (OSC) diode, along with methods for making such devices, and uses thereof. The organic sensing layer comprises a fused thiophene-based organic polymer that connects top and bottom electrodes to deliver a vertical current flow. The nano-porous top-electrode structure enables the contact between ambient gas molecules and the vertical organic channel. The device has high sensitivity, is easy to process, and has a long shelf life.

Abstract: Described herein are electronics that incorporate heterocyclic organic compounds. More specifically, described herein are organic electronics systems that are combined with donor-acceptor organic semiconductors, along with methods for making such devices, and uses thereof.

Abstract: A gas sensor includes a first electrode, a gas detecting layer disposed on the first electrode, and an electric-conduction enhanced electrode unit being electrically connected to the first electrode and the gas detecting layer. The electric-conduction enhanced electrode unit includes an electric-conduction enhancing layer and a second electrode electrically connected to the electric-conduction enhancing layer. The electric-conduction enhancing layer is electrically connected to the gas detecting layer and is made of an electrically conductive organic material.

Abstract: An organic light-emitting device includes a first electrode layer, an emission layer, an electron transporting layer, an electron injection layer, and a second electrode layer sequentially formed from bottom to top. The emission layer includes a guest light-emitting material, a first phenyl phosphine oxide derivative and a hole transporting material. The electron transporting layer includes a second phenyl phosphine oxide derivative and a third phenyl phosphine oxide derivative different from the second phenyl phosphine oxide derivative. One of the second phenyl phosphine oxide derivative and the third phenyl phosphine oxide derivative is identical to the first phenyl phosphine oxide derivative. The electron injection layer includes an alkaline metal compound.

Abstract: An organic light-emitting device includes a first electrode, a first light-emitting layer, a first low work function layer, a second low work function layer, a conductive etching-resistant layer, a first hole-injection layer, a second light-emitting layer, and a second electrode. The first light-emitting layer is disposed over the first electrode. The first low work function layer is disposed over the first light-emitting layer. The second low work function layer is disposed over the first low work function layer, and a work function of the second low work function layer is greater than a work function of the first low work function layer. The conductive etching-resistant layer is disposed over the second low work function layer. The first hole-injection layer is disposed over the conductive etching-resistant layer. The second light-emitting layer is disposed over the first hole-injection layer. The second electrode is disposed over the second light-emitting layer.

Abstract: An organic light-emitting device includes a first electrode, a first light-emitting layer, a first low work function layer, a second low work function layer, a conductive etching-resistant layer, a first hole-injection layer, a second light-emitting layer, and a second electrode. The first light-emitting layer is disposed over the first electrode. The first low work function layer is disposed over the first light-emitting layer. The second low work function layer is disposed over the first low work function layer, and a work function of the second low work function layer is greater than a work function of the first low work function layer. The conductive etching-resistant layer is disposed over the second low work function layer. The first hole-injection layer is disposed over the conductive etching-resistant layer. The second light-emitting layer is disposed over the first hole-injection layer. The second electrode is disposed over the second light-emitting layer.

Abstract: A metal oxide semiconductor transistor includes a gate, a metal oxide active layer, a gate insulating layer, a source, and a drain. The metal oxide active layer has a first surface and a second surface, and the first surface faces to the gate. The gate insulating layer is disposed between the gate and the metal oxide active layer. The source and the drain are respectively connected to the metal oxide active layer. The second surface defines a mobility enhancing region between the source and the drain. An oxygen content of the metal oxide active layer in the mobility enhancing region is less than an oxygen content of the metal oxide active layer in the region outside the mobility enhancing region. The metal oxide semiconductor transistor has high carrier mobility.

Abstract: A vertical electro-optical component and a method for forming the same are provided. The vertical electro-optical component includes a substrate, a first electrode layer formed on the substrate, a patterned insulating layer formed on the first electrode layer, a metal layer formed on the patterned insulating layer, a semiconductor layer formed on the first electrode layer, and a second electrode layer formed on the semiconductor layer, wherein the semiconductor layer encapsulates the patterned insulating layer and the metal layer. The vertical electro-optical component thus has a low operational voltage of a vertical transistor and a high reaction speed of a photo diode, and may be used to form light-emitting transistors.

Abstract: A light detecting array structure and a light detecting module are provided. The light detecting array structure includes a plurality of first electrodes, a plurality of second electrodes, a first carrier selective layer, a second carrier selective layer, and a light-absorbing active layer. The second electrodes are disposed on one side of the first electrodes. Between the first electrodes and the second electrodes, a first carrier selective layer, a light-absorbing active layer and a second carrier selective layer are disposed. The light detecting module includes the light detecting array structure and a control unit. The control unit is coupled to the first electrodes and second electrodes, selectively provides at least two cross voltages between each of the first electrodes and each of the second electrodes, and reads photocurrents flowing through the first electrodes and second electrodes.