Abstract: A vertical organic transistor and a method for fabricating the same are provided, wherein an emitter, a grid with openings and a collector are sequentially arranged above a substrate. Two organic semiconductor layers are interposed respectively between the emitter and the grid with openings and between the grid with openings and the collector. The channel length is simply decided by the thickness of the organic semiconductor layers. The collector current depends on the space-charge-limited current contributed by the potential difference between the emitter and the openings of the grid. And the grid voltage can thus effectively control the collector current. Further, the fabrication process of the vertical organic transistor of the present invention is simple and exempt from using the photolithographic process.

Abstract: An organic optoelectronic component is provided, which includes a first electrode, an active layer formed on the first electrode, a second intermediate layer formed on the active layer, and a second electrode formed on the second intermediate layer, wherein the second intermediate layer is formed with a second mixture containing a second polymer and at least a second organic molecule. The second organic molecule is one for forming hole transferring material, electron transferring material, electron blocking material or hole blocking material. The organic optoelectronic component of the present invention is prepared by a solution process, thereby simplifying the process, improving film-formation property, and enhancing component efficiency.

Abstract: An organic semiconductor infrared distance sensing apparatus and an organic infrared emitting apparatus thereof are disclosed. The organic semiconductor infrared distance sensing apparatus comprises an organic infrared emitting apparatus and an organic infrared receiving apparatus. The organic infrared emitting apparatus has a positive electrode layer and a negative electrode layer to form an electric field, and organic light emitting molecules are sandwiched between the two layers and correspond to the positive electrode layer and the negative electrode layer. Under a positive bias, a plurality of electrons and holes are respectively injected from electrodes and recombine with each other to emit photons. An infrared organic conversion layer absorbs and transfers the energy to infrared emitting molecules to emit infrared light.

Abstract: A vertical organic transistor and a method for fabricating the same are provided, wherein an emitter, a grid with openings and a collector are sequentially arranged above a substrate. Two organic semiconductor layers are interposed respectively between the emitter and the grid with openings and between the grid with openings and the collector. The channel length is simply decided by the thickness of the organic semiconductor layers. The collector current depends on the space-charge-limited current contributed by the potential difference between the emitter and the openings of the grid. And the grid voltage can thus effectively control the collector current. Further, the fabrication process of the vertical organic transistor of the present invention is simple and exempt from using the photolithographic process.

Abstract: The present invention discloses an organic field effect transistor and a manufacturing method thereof. The organic field effect transistor comprises a top-contact type or a bottom-contact type, and the manufacturing method thereof comprises the following steps: a substrate is provided, a metal gate is formed on the substrate, an inorganic insulating layer is formed on the substrate and the metal gate, a surface of the insulating layer is polished, an organic filler is filled in pores on the insulating layer as an insulating treatment, a modified layer is formed on the inorganic insulating layer, and finally an organic semiconductor layer, a source and a drain are formed. By combining the advantages of simply liquefied process of the organic material and the high stability of inorganic material, and operation conditions of control process, the present invention can achieve effectively that the device is high carrier mobility and high on/off ratio.

Abstract: Apparatus and method for forming multilayer polymer thin film. The method uses a solution container with a gap to prevent the huge amount of solution from directly falling on the first layer. Then the wet film is formed by moving the container with the thin film thickness is decided by the distance between the gap and the substrate. The wet film is dried in a very short time by the heater therefore there is no time for the second solvent to dissolve the first layer. The method can effectively achieve the large-area and multilayer structure in organic devices through solution processing.

Abstract: An organic-semiconductor-based infrared receiving device comprises an electrode layer having a positive layer and a negative layer to form an electric field, and a transport layer located between the positive and negative layers and having a first and a second predetermined material combined in a predetermined ratio. The energy of infrared light from a light source is received at an interface between the first and second materials. The thickness of the transport layer can be increased to enhance the light absorbance in the infrared light range to form electron-hole pairs, which are then parted to form a plurality of electrons and holes driven by the electric field to move to the negative layer and the positive layer, respectively, so that a predetermined photocurrent is generated.

Abstract: A light-detecting device structure comprises a substrate, a vertical organic light-emitting transistor and a light-detecting unit, wherein the vertical organic light-emitting transistor is disposed at a first location on the substrate, and the light-detecting unit is disposed at a second location on the substrate, in which the first and the second locations can be spaced out an appropriate distance as needed. The vertical organic light-emitting transistor emits a light to an object, and the light-detecting unit receives a reflected light from the object. The reflected light received is analyzed to determine a distance between the light-detecting device structure and the object, as well as a shape or a composition of the object.

Abstract: A vertical organic light emitting transistor assembly and-a horizontal organic light emitting transistor assembly are provided. The vertical organic light emitting transistor assembly comprises a first/second vertical transistor and a first/second organic light emitting diode perpendicularly integrated with the first/second vertical transistor, respectively. The horizontal organic light emitting transistor assembly comprises a substrate, a third vertical transistor and a third organic light emitting diode. The third vertical transistor and the third organic light emitting diode are arranged abreast on the substrate. By integrating the organic light emitting diode and the vertical transistor into a unitary electronic element, the vertical transistor can efficiently drive the organic light emitting diode so that the organic light emitting transistor assembly can overcome limitations caused by existing manufacturing processes and adapt to extensive applications.

Abstract: A passive matrix organic light emitting diode display device comprises a plurality of vertical organic light emitting transistors, each having a first collector, a first grid/base, and a first emitter. Therein, the first collectors are electrically connected and arranged parallelly to form a plurality of first scan units, and the first grids/bases are electrically connected and arranged parallelly to form a plurality of second scan units, while the first emitters are integrated into a common electrode, in which the first scan units and the second scan units are perpendicularly crossed. By perpendicularly combining vertical transistors onto organic light emitting diodes so as to drive the organic light emitting diodes, an active area as well as a luminance of the organic light emitting diode display device are enhanced and consequently an aperture ratio of each pixel unit in the organic light emitting diode display device is increased.

Abstract: A vertical organic transistor and a method for fabricating the same are provided, wherein an emitter, a grid with openings and a collector are sequentially arranged above a substrate. Two organic semiconductor layers are interposed respectively between the emitter and the grid with openings and between the grid with openings and the collector. The channel length is simply decided by the thickness of the organic semiconductor layers. The collector current depends on the space-charge-limited current contributed by the potential difference between the emitter and the openings of the grid. And the grid voltage can thus effectively control the collector current. Further, the fabrication process of the vertical organic transistor of the present invention is simple and exempt from using the photolithographic process.

Abstract: The invention discloses a photovoltaic cell with a high photocurrent. The photovoltaic cell comprises a first electrode, a second electrode, a photoactive layer between the first and second electrodes, and a polar organic layer between the photoactive layer and at least one of the first and second electrodes.

Abstract: A vertical organic transistor and a method for fabricating the same are provided, wherein an emitter, a grid with openings and a collector are sequentially arranged above a substrate. Two organic semiconductor layers are interposed respectively between the emitter and the grid with openings and between the grid with openings and the collector. The channel length is simply decided by the thickness of the organic semiconductor layers. The collector current depends on the space-charge-limited current contributed by the potential difference between the emitter and the openings of the grid. And the grid voltage can thus effectively control the collector current. Further, the fabrication process of the vertical organic transistor of the present invention is simple and exempt from using the photolithographic process.

Abstract: A highly stable, multilayer organic molecular photoelectric element without interlayer miscibility phenomenon during manufacturing process, and a method for producing multilayer organic molecular photoelectric elements with simplified solution process are disclosed.

Abstract: This invention relates to a device which is multilayer LEDs based on the commonly used high-efficiency electroluminescent conjugated polymers and can emitte the whole spectrum by varying voltage; wherein the structure of the device comprises a transparent electrode (TE) or a hole injection layer (HIL), several organic layers and an uppermost electron injection layer (EIL), characterized in choosing material of conjugated polymers with proper electron affinity (EA) and ionization potential (IP) for the organic layers.

Abstract: A polymeric light emitting diode (PLED) device comprises: a substrate; a positive electrode formed above the substrate; a hole transportation layer formed above the positive electrode; an organic light emitting composite layer formed above the hole transportation layer, comprising a plurality of organic light emitting layers, wherein every organic light emitting layer has an polymeric host material with a higher energy gap, and at least one of the organic light emitting layers is doped with an polymeric material with a lower energy gap; and a negative electrode formed above the organic light emitting composite layer.

Abstract: A device having an organic transistor device integrated with an organic light-emitting diode's heterojunctions. This device at least comprises: a transparent substrate, an organic transistor and an organic light-emitting diode. The organic transistor at least includes an organic semiconductor layer, one of the organic semiconductor layers serves as the organic active layer of the organic light-emitting diode, and the organic active layer and the other organic semiconductor layers form heterojunctions. The present invention uses the organic semiconductor layer to simultaneously form the organic active layer of the organic transistor, so that the organic light-emitting diode and the organic transistor can be easily integrated together so as to solve the problem of the poor luminance efficiency of a conventional integrated organic transistor and organic light-emitting diode and the problem of its high manufacturing cost.

Abstract: A package of an organic electro-luminance display panel and a manufacturing method thereof are disclosed. First, an organic electro-luminance display panel with a plurality of first contacts is provided. Then, a cover plate is disposed above the organic electro-luminance display panel, wherein the cover plate has a control circuit and a plurality of second contacts. The second contacts are electrically connected to the first contacts of the organic electro-luminance display panel so that the organic electro-luminance display panel can be controlled by the control circuit. Finally, a frame is formed between the organic electro-luminance display panel and the cover plate. The package of the organic electro-luminance display panel provides a larger display area and a better resolution.

Abstract: An active matrix organic light-emitting diode and manufacturing method thereof is provided. A thin film transistor having a gate, a source and a drain is formed over a substrate. An anode layer is formed over the substrate such that the anode layer connects electrically with the source terminal of the thin film transistor. An organic layer is formed to cover the anode layer and the thin film transistor. The organic layer between the source and the drain serves as a channel region of the thin film transistor. A cathode layer is formed over the organic layer. Since the molecules inside the organic layer are aligned in a direction from the source to the drain and perpendicular to a direction from the anode layer to the cathode layer, electron mobility at the channel region is enhanced and the emitting efficiency of the diode is increased.