Patents by Inventor Hsin-Han Lin
Hsin-Han Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240130055Abstract: This disclosure relates to a combined power module that includes a base structure, a terminal structure, a second terminal, and a cover. The terminal structure includes a mount assembly and a plurality of first terminals. The mount assembly is assembled on the base structure. The first terminals are disposed on the mount assembly. The second terminal is disposed on the base structure. The cover is disposed on the base structure and covers at least part of the first terminals and at least part of the second terminal.Type: ApplicationFiled: March 2, 2023Publication date: April 18, 2024Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Yuan-Cheng HUANG, I-Hung CHIANG, Ji-Yuan SYU, Hsin-Han LIN, Po-Kai CHIU, Kuo-Shu KAO
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Publication number: 20240081077Abstract: A transistor includes a first semiconductor layer, a second semiconductor layer, a semiconductor nanosheet, a gate electrode and source and drain electrodes. The semiconductor nanosheet is physically connected to the first semiconductor layer and the second semiconductor layer. The gate electrode wraps around the semiconductor nanosheet. The source and drain electrodes are disposed at opposite sides of the gate electrode. The first semiconductor layer surrounds the source electrode, the second semiconductor layer surrounds the drain electrode, and the semiconductor nanosheet is disposed between the source and drain electrodes.Type: ApplicationFiled: September 1, 2022Publication date: March 7, 2024Applicants: Taiwan Semiconductor Manufacturing Company, Ltd., National Yang Ming Chiao Tung UniversityInventors: Po-Tsun Liu, Meng-Han Lin, Zhen-Hao Li, Tsung-Che Chiang, Bo-Feng Young, Hsin-Yi Huang, Sai-Hooi Yeong, Yu-Ming Lin
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Patent number: 11876551Abstract: The present disclosure provides an electronic module including a circuit including a transmitting part and a receiving part physically separated from the transmitting part. The electronic module also includes an element isolated from the circuit and configured to block electrical interference between the transmitting part and the receiving part.Type: GrantFiled: August 19, 2021Date of Patent: January 16, 2024Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.Inventors: Shih-Wen Lu, Chun-Jen Chen, Po-Hsiang Tseng, Hsin-Han Lin, Ming-Lun Yu
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Publication number: 20230352361Abstract: Provided are a power module and a manufacturing method thereof. The power module includes an insulating substrate, a first, a second and a third conductive layers, a first thermal interface material layer, a first and a second chips and a thermal conductive layer. The insulating substrate has a first and a second surfaces opposite to each other. The first and the second conductive layers are disposed on the first surface, and electrically separated from each other. The first thermal interface material layer is disposed on the first conductive layer. The third conductive layer is disposed on the first thermal interface material layer. The first chip is disposed on the third conductive layer and electrically connected to the third conductive layer. The second chip is disposed on the second conductive layer and electrically connected to the second conductive layer. The thermal conductive layer is disposed on the second surface.Type: ApplicationFiled: April 28, 2022Publication date: November 2, 2023Applicant: Industrial Technology Research InstituteInventors: Hsin-Han Lin, Tai-Jyun Yu
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Publication number: 20230057327Abstract: The present disclosure provides an electronic module including a circuit including a transmitting part and a receiving part physically separated from the transmitting part. The electronic module also includes an element isolated from the circuit and configured to block electrical interference between the transmitting part and the receiving part.Type: ApplicationFiled: August 19, 2021Publication date: February 23, 2023Applicant: Advanced Semiconductor Engineering, Inc.Inventors: Shih-Wen LU, Chun-Jen CHEN, Po-Hsiang TSENG, Hsin-Han LIN, Ming-Lun YU
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Patent number: 11239168Abstract: A chip package structure including first and second insulating layers, first and second circuit structures, a chip on the first circuit structure, an encapsulant, a conductive through via, and first and second heat dissipation layers is provided. The first circuit structure is disposed at the first surface of the first insulating layer. The bottom electrode of the chip is electrically connected to the first circuit structure. The second circuit structure is disposed on the chip and electrically connected to the top electrode of the chip. The encapsulant encapsulates the first and second circuit structures and the chip. The conductive through via is disposed in the encapsulant and connects the first and second circuit structures. The second insulating layer is disposed on the second circuit structure. The first heat dissipation layer is disposed on the first insulating layer. The second heat dissipation layer is disposed on the second insulating layer.Type: GrantFiled: April 16, 2020Date of Patent: February 1, 2022Assignee: Industrial Technology Research InstituteInventors: Hsin-Han Lin, Yu-Min Lin, Tao-Chih Chang
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Publication number: 20210035914Abstract: A chip package structure including first and second insulating layers, first and second circuit structures, a chip on the first circuit structure, an encapsulant, a conductive through via, and first and second heat dissipation layers is provided. The first circuit structure is disposed at the first surface of the first insulating layer. The bottom electrode of the chip is electrically connected to the first circuit structure. The second circuit structure is disposed on the chip and electrically connected to the top electrode of the chip. The encapsulant encapsulates the first and second circuit structures and the chip. The conductive through via is disposed in the encapsulant and connects the first and second circuit structures. The second insulating layer is disposed on the second circuit structure. The first heat dissipation layer is disposed on the first insulating layer. The second heat dissipation layer is disposed on the second insulating layer.Type: ApplicationFiled: April 16, 2020Publication date: February 4, 2021Applicant: Industrial Technology Research InstituteInventors: Hsin-Han Lin, Yu-Min Lin, Tao-Chih Chang
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Patent number: 10672677Abstract: A semiconductor package structure is provided. The semiconductor package structure includes a semiconductor chip, a guard ring, a gel layer, and a first lead frame. The guard ring is disposed on the semiconductor chip, and the gel layer is disposed on the guard ring. The first lead frame is electrically connected to the semiconductor chip, and the gel layer is located between the guard ring and the first lead frame.Type: GrantFiled: May 14, 2018Date of Patent: June 2, 2020Assignees: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE, WIN-HOUSE ELECTRONIC CO., LTD.Inventors: Jing-Yao Chang, Tao-Chih Chang, Kuo-Shu Kao, Fang-Jun Leu, Hsin-Han Lin, Chih-Ming Tzeng, Hsiao-Ming Chang, Chih-Ming Shen
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Publication number: 20180261519Abstract: A semiconductor package structure is provided. The semiconductor package structure includes a semiconductor chip, a guard ring, a gel layer, and a first lead frame. The guard ring is disposed on the semiconductor chip, and the gel layer is disposed on the guard ring. The first lead frame is electrically connected to the semiconductor chip, and the gel layer is located between the guard ring and the first lead frame.Type: ApplicationFiled: May 14, 2018Publication date: September 13, 2018Applicants: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE, Win-House Electronic Co., Ltd.Inventors: Jing-Yao CHANG, Tao-Chih CHANG, Kuo-Shu KAO, Fang-Jun LEU, Hsin-Han LIN, Chih-Ming TZENG, Hsiao-Ming CHANG, Chih-Ming SHEN
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Publication number: 20170084521Abstract: A semiconductor package structure is provided. The semiconductor package structure includes a semiconductor chip, a guard ring, a gel layer, and a first lead frame. The guard ring is disposed on the semiconductor chip, and the gel layer is disposed on the guard ring. The first lead frame is electrically connected to the semiconductor chip, and the gel layer is located between the guard ring and the first lead frame.Type: ApplicationFiled: May 4, 2016Publication date: March 23, 2017Applicants: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE, Win-House Electronic Co.,Ltd.Inventors: Jing-Yao CHANG, Tao-Chih CHANG, Kuo-Shu KAO, Fang-Jun LEU, Hsin-Han LIN, Chih-Ming TZENG, Hsiao-Ming CHANG, Chih-Ming SHEN
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Publication number: 20120282400Abstract: A method for making a cemented tungsten carbide-based material includes subjecting a cemented tungsten carbide substrate film to chromization so as to form the cemented tungsten carbide substrate with a chromized layer that contains a tungsten carbide and a chromium carbide and forming a diamond film on the chromized layer.Type: ApplicationFiled: July 18, 2012Publication date: November 8, 2012Applicant: National Taiwan Ocean UniversityInventors: Chau-Chang Chou, Jyh-Wei Lee, Yen-Yi Chen, Hsin-Han Lin
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Publication number: 20100104860Abstract: A cemented tungsten carbide-based material includes: a cemented tungsten carbide substrate having a chromized layer that contains a tungsten carbide and a chromium carbide; and a diamond film formed on said chromized layer. A method for making the cemented tungsten carbide-based material involves subjecting a cemented tungsten carbide substrate to chromization so as to form the cemented tungsten carbide substrate with a chromized layer that contains a tungsten carbide and a chromium carbide; and forming a diamond film on the chromized layer.Type: ApplicationFiled: April 27, 2009Publication date: April 29, 2010Applicant: NATIONAL TAIWAN OCEAN UNIVERSITYInventors: Chau-Chang Chou, Jyh-Wei Lee, Yen-Yi Chen, Hsin-Han Lin
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Patent number: D976852Type: GrantFiled: June 18, 2020Date of Patent: January 31, 2023Assignee: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTEInventors: Sheng-Tsai Wu, Hsin-Han Lin, Yuan-Yin Lo, Kuo-Shu Kao, Tai-Jyun Yu, Han-Lin Wu, Yen-Ting Lin