Patents by Inventor Hsin-Hsiang TSENG

Hsin-Hsiang TSENG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11515435
    Abstract: A semiconductor device includes a semiconductor substrate, a photo sensing region, and a plurality of nanostructures. The semiconductor substrate has a first dopant. The photo sensing region is embedded in the semiconductor substrate, has a top surface level with a top surface of the semiconductor substrate, and has a second dopant that is of a different conductivity type than the first dopant. The plurality of nanostructures is on the photo sensing region and is made of a material the same as the photo sensing region.
    Type: Grant
    Filed: October 9, 2020
    Date of Patent: November 29, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hsin-Hsiang Tseng, Chih-Fei Lee, Chia-Pin Cheng, Fu-Cheng Chang
  • Patent number: 11488671
    Abstract: A memory device includes a non-volatile (NV) memory including a plurality of NV memory elements. A method for performing programming management of the NV memory includes: setting a programming sequence of the NV memory elements; determining a selection interval between each of the NV memory elements according to the programming sequence and a serial number of each of the NV memory elements; for a target NV memory element of the plurality of NV memory elements in the programming sequence, determining a serial number of an immediately previous NV memory element in the programming sequence according to the selection interval and a serial number of the target NV memory element; determining whether the immediately previous NV memory element is in a busy state; and only when the immediately previous NV memory element is not in the busy state, programming the target NV memory element.
    Type: Grant
    Filed: June 17, 2021
    Date of Patent: November 1, 2022
    Assignee: Silicon Motion, Inc.
    Inventors: Che-Wei Hsu, Hsin-Hsiang Tseng
  • Publication number: 20220310905
    Abstract: A method for manufacturing a memory device is provided. The method includes etching an opening in a first dielectric layer; forming a bottom electrode, a resistance switching element, and a top electrode in the opening in the first dielectric layer; forming a second dielectric layer over the bottom electrode, the resistance switching element, and the top electrode; and forming an electrode via connected to a top surface of the top electrode in the second dielectric layer.
    Type: Application
    Filed: June 13, 2022
    Publication date: September 29, 2022
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hsin-Hsiang TSENG, Chih-Lin WANG, Yi-Huang WU
  • Patent number: 11362267
    Abstract: A memory device includes a substrate, an etch stop layer, a protective layer, and a resistance switching element. The substrate has a memory region and a logic region, and includes a metallization pattern therein. The etch stop layer is over the substrate, and has a first portion over the memory region and a second portion over the logic region. The protective layer covers the first portion of the etch stop layer. The protective layer does not cover the second portion of the etch stop layer. The resistance switching element is over the memory region, and the resistance switching element is electrically connected to the metallization pattern through the etch stop layer and the protective layer.
    Type: Grant
    Filed: December 19, 2019
    Date of Patent: June 14, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hsin-Hsiang Tseng, Chih-Lin Wang, Yi-Huang Wu
  • Patent number: 11294586
    Abstract: A method for performing read acceleration, an associated data storage device and controller thereof are provided, where the method is applicable to the data storage device and the controller. The method includes: receiving a write command from a host device, and performing programming on a non-volatile (NV) memory element within a plurality of NV memory elements according to the write command; recording operation command-related information corresponding to the write command; when a read command having high priority exists in a queue corresponding to the NV memory element, suspending performing programming on the NV memory element; executing the read command; and after executing the read command, continuing performing programming on the NV memory element at least according to the operation command-related information.
    Type: Grant
    Filed: January 17, 2019
    Date of Patent: April 5, 2022
    Assignee: Silicon Motion, Inc.
    Inventors: Che-Wei Hsu, Hsin-Hsiang Tseng
  • Publication number: 20210312990
    Abstract: A memory device includes a non-volatile (NV) memory including a plurality of NV memory elements. A method for performing programming management of the NV memory includes: setting a programming sequence of the NV memory elements; determining a selection interval between each of the NV memory elements according to the programming sequence and a serial number of each of the NV memory elements; for a target NV memory element of the plurality of NV memory elements in the programming sequence, determining a serial number of an immediately previous NV memory element in the programming sequence according to the selection interval and a serial number of the target NV memory element; determining whether the immediately previous NV memory element is in a busy state; and only when the immediately previous NV memory element is not in the busy state, programming the target NV memory element.
    Type: Application
    Filed: June 17, 2021
    Publication date: October 7, 2021
    Applicant: Silicon Motion, Inc.
    Inventors: Che-Wei Hsu, Hsin-Hsiang Tseng
  • Patent number: 11069409
    Abstract: A method for performing programming management, associated memory device and a controller thereof are provided. The memory device may include a non-volatile (NV) memory, and the NV memory may include a plurality of NV memory elements. The method may include: before programming a target NV memory element of the plurality of NV memory elements, checking whether another NV memory element of the plurality of NV memory elements is in a busy state or in a non-busy state; and when the other NV memory element enters the non-busy state, programming the target NV memory element.
    Type: Grant
    Filed: January 1, 2018
    Date of Patent: July 20, 2021
    Assignee: Silicon Motion, Inc.
    Inventors: Che-Wei Hsu, Hsin-Hsiang Tseng
  • Publication number: 20210193911
    Abstract: A memory device includes a substrate, an etch stop layer, a protective layer, and a resistance switching element. The substrate has a memory region and a logic region, and includes a metallization pattern therein. The etch stop layer is over the substrate, and has a first portion over the memory region and a second portion over the logic region. The protective layer covers the first portion of the etch stop layer. The protective layer does not cover the second portion of the etch stop layer. The resistance switching element is over the memory region, and the resistance switching element is electrically connected to the metallization pattern through the etch stop layer and the protective layer.
    Type: Application
    Filed: December 19, 2019
    Publication date: June 24, 2021
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hsin-Hsiang TSENG, Chih-Lin WANG, Yi-Huang WU
  • Publication number: 20210028318
    Abstract: A semiconductor device includes a semiconductor substrate, a photo sensing region, and a plurality of nanostructures. The semiconductor substrate has a first dopant. The photo sensing region is embedded in the semiconductor substrate, has a top surface level with a top surface of the semiconductor substrate, and has a second dopant that is of a different conductivity type than the first dopant. The plurality of nanostructures is on the photo sensing region and is made of a material the same as the photo sensing region.
    Type: Application
    Filed: October 9, 2020
    Publication date: January 28, 2021
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hsin-Hsiang TSENG, Chih-Fei LEE, Chia-Pin CHENG, Fu-Cheng CHANG
  • Patent number: 10804414
    Abstract: A method of forming a semiconductor device includes forming a photo sensing region in a semiconductor substrate, wherein the semiconductor substrate is of a first type dopant and the photo sensing region is of a second type dopant that has a different conductivity type than the first type dopant; forming a nanostructure layer in contact with an interface between the photo sensing region and the semiconductor substrate; and etching the nanostructure layer until exposing the photo sensing region to form a plurality of nanostructures.
    Type: Grant
    Filed: April 22, 2019
    Date of Patent: October 13, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hsin-Hsiang Tseng, Chih-Fei Lee, Chia-Pin Cheng, Fu-Cheng Chang
  • Publication number: 20200117378
    Abstract: A method for performing read acceleration, an associated data storage device and controller thereof are provided, where the method is applicable to the data storage device and the controller. The method includes: receiving a write command from a host device, and performing programming on a non-volatile (NV) memory element within a plurality of NV memory elements according to the write command; recording operation command-related information corresponding to the write command; when a read command having high priority exists in a queue corresponding to the NV memory element, suspending performing programming on the NV memory element; executing the read command; and after executing the read command, continuing performing programming on the NV memory element at least according to the operation command-related information.
    Type: Application
    Filed: January 17, 2019
    Publication date: April 16, 2020
    Inventors: Che-Wei Hsu, Hsin-Hsiang Tseng
  • Publication number: 20190252559
    Abstract: A method of forming a semiconductor device includes forming a photo sensing region in a semiconductor substrate, wherein the semiconductor substrate is of a first type dopant and the photo sensing region is of a second type dopant that has a different conductivity type than the first type dopant; forming a nanostructure layer in contact with an interface between the photo sensing region and the semiconductor substrate; and etching the nanostructure layer until exposing the photo sensing region to form a plurality of nanostructures.
    Type: Application
    Filed: April 22, 2019
    Publication date: August 15, 2019
    Inventors: Hsin-Hsiang Tseng, Chih-Fei Lee, Chia-Pin Cheng, Fu-Cheng Chang
  • Patent number: 10310746
    Abstract: A method for performing dynamic resource management in a memory device, the memory device, and a controller thereof are provided. The memory device includes a non-volatile (NV) memory, and the NV memory includes a plurality of NV memory elements. The method may include: storing a plurality of sets of physical region descriptor (PRD) information related to a plurality of host commands, respectively, and storing a plurality of intermediate PRDs respectively corresponding to the plurality of sets of PRD information into a first queue; obtaining an intermediate PRD of the plurality of intermediate PRDs from the first queue, and storing the intermediate PRD into a second queue; sending a command to the NV memory according to the intermediate PRD in the second queue to access data; and when an operation of accessing the data is successful, releasing the intermediate PRD from the second queue to the first queue.
    Type: Grant
    Filed: January 1, 2018
    Date of Patent: June 4, 2019
    Assignee: Silicon Motion Inc.
    Inventors: Che-Wei Hsu, Hsin-Hsiang Tseng
  • Patent number: 10269990
    Abstract: A semiconductor device is provided, which includes a substrate and at least one nanostructure. The substrate has sensing pixels, and each of the sensing pixels has a photo sensing region for absorbing incident light. The nanostructure is directly on the photo sensing region. The nanostructure of each of the sensing pixels has a projected portion on an upper surface of the substrate, and a circle equivalent diameter of the projected portion of the nanostructure of each of the sensing pixels is substantially within a wavelength range of 100 nm to 1900 nm of the incident light configured to enter the substrate through the nanostructure.
    Type: Grant
    Filed: March 27, 2017
    Date of Patent: April 23, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hsin-Hsiang Tseng, Chih-Fei Lee, Chia-Pin Cheng, Fu-Cheng Chang
  • Publication number: 20190050154
    Abstract: A method for performing dynamic resource management in a memory device, the memory device, and a controller thereof are provided. The memory device includes a non-volatile (NV) memory, and the NV memory includes a plurality of NV memory elements. The method may include: storing a plurality of sets of physical region descriptor (PRD) information related to a plurality of host commands, respectively, and storing a plurality of intermediate PRDs respectively corresponding to the plurality of sets of PRD information into a first queue; obtaining an intermediate PRD of the plurality of intermediate PRDs from the first queue, and storing the intermediate PRD into a second queue; sending a command to the NV memory according to the intermediate PRD in the second queue to access data; and when an operation of accessing the data is successful, releasing the intermediate PRD from the second queue to the first queue.
    Type: Application
    Filed: January 1, 2018
    Publication date: February 14, 2019
    Inventors: Che-Wei Hsu, Hsin-Hsiang Tseng
  • Publication number: 20190027221
    Abstract: A method for performing programming management, associated memory device and a controller thereof are provided. The memory device may include a non-volatile (NV) memory, and the NV memory may include a plurality of NV memory elements. The method may include: before programming a target NV memory element of the plurality of NV memory elements, checking whether another NV memory element of the plurality of NV memory elements is in a busy state or in a non-busy state; and when the other NV memory element enters the non-busy state, programming the target NV memory element.
    Type: Application
    Filed: January 1, 2018
    Publication date: January 24, 2019
    Inventors: Che-Wei Hsu, Hsin-Hsiang Tseng
  • Publication number: 20180166592
    Abstract: A semiconductor device is provided, which includes a substrate and at least one nanostructure. The substrate has sensing pixels, and each of the sensing pixels has a photo sensing region for absorbing incident light. The nanostructure is directly on the photo sensing region. The nanostructure of each of the sensing pixels has a projected portion on an upper surface of the substrate, and a circle equivalent diameter of the projected portion of the nanostructure of each of the sensing pixels is substantially within a wavelength range of 100 nm to 1900 nm of the incident light configured to enter the substrate through the nanostructure.
    Type: Application
    Filed: March 27, 2017
    Publication date: June 14, 2018
    Inventors: Hsin-Hsiang Tseng, Chih-Fei Lee, Chia-Pin Cheng, Fu-Cheng Chang
  • Patent number: 9997628
    Abstract: The present disclosure provides a semiconductor device and a method of fabricating the semiconductor device. In some embodiments, the semiconductor device includes a substrate having a well region, a first source/drain region, a second source/drain region, a buried channel and a gate structure. The first source/drain region is located within the well region. The gate structure includes a co-doped gate including polysilicon and having a first concentration of a n-type impurity and a second concentration of a p-type impurity, in which the n-type impurity and the p-type impurity are mixed and distributed.
    Type: Grant
    Filed: April 13, 2017
    Date of Patent: June 12, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hsin-Hsiang Tseng, Jheng-Hong Jiang, Fu-Cheng Chang, Ching-Hung Kao, Hsin-Chi Chen
  • Publication number: 20150123160
    Abstract: A flip chip light-emitting diode (LED) package structure includes a circuit board, an electrical conducting layer and a plurality of flip chip light-emitting elements. The circuit board includes a bearing surface. The electrical conducting layer is formed on the bearing surface, and includes a plurality of electrical connection regions independent of each other. Each flip chip light-emitting element includes a p-type electrode and an n-type electrode. The p-type electrodes and the n-type electrodes of the flip chip light-emitting elements are electrically connected to the electrical connection regions, so that the flip chip light-emitting elements are electrically connected in series to form a package structure. During packaging of the flip chip light-emitting elements, the structure formed by the serial connection forms a circuit that can withstand a high voltage, and further reduce the current.
    Type: Application
    Filed: November 6, 2013
    Publication date: May 7, 2015
    Applicant: TEKCORE CO., LTD.
    Inventors: Hai-Wen Hsu, Hsin-Hsiang Tseng, Ruei-Ming Yang
  • Patent number: 8627551
    Abstract: A segment positioning belt having a flexible belt body having a positioning end and an extension. A plurality of segment positioning portions are positioned in spaced relation to each other along the extension. A metal core is integrally formed into the belt body. The metal core extends within the positioning end and the extension of the belt body. The belt body has an elongated strip shape. The belt body is formed of a rubber or polymeric material.
    Type: Grant
    Filed: August 18, 2011
    Date of Patent: January 14, 2014
    Assignees: Taiwan Kuo Her Industrial Co., Ltd.
    Inventor: Hsin-Hsiang Tseng