Abstract: A semiconductor device is provided, which includes a substrate and at least one nanostructure. The substrate has sensing pixels, and each of the sensing pixels has a photo sensing region for absorbing incident light. The nanostructure is directly on the photo sensing region. The nanostructure of each of the sensing pixels has a projected portion on an upper surface of the substrate, and a circle equivalent diameter of the projected portion of the nanostructure of each of the sensing pixels is substantially within a wavelength range of 100 nm to 1900 nm of the incident light configured to enter the substrate through the nanostructure.

Abstract: A method for performing dynamic resource management in a memory device, the memory device, and a controller thereof are provided. The memory device includes a non-volatile (NV) memory, and the NV memory includes a plurality of NV memory elements. The method may include: storing a plurality of sets of physical region descriptor (PRD) information related to a plurality of host commands, respectively, and storing a plurality of intermediate PRDs respectively corresponding to the plurality of sets of PRD information into a first queue; obtaining an intermediate PRD of the plurality of intermediate PRDs from the first queue, and storing the intermediate PRD into a second queue; sending a command to the NV memory according to the intermediate PRD in the second queue to access data; and when an operation of accessing the data is successful, releasing the intermediate PRD from the second queue to the first queue.

Abstract: A method for performing programming management, associated memory device and a controller thereof are provided. The memory device may include a non-volatile (NV) memory, and the NV memory may include a plurality of NV memory elements. The method may include: before programming a target NV memory element of the plurality of NV memory elements, checking whether another NV memory element of the plurality of NV memory elements is in a busy state or in a non-busy state; and when the other NV memory element enters the non-busy state, programming the target NV memory element.

Abstract: A semiconductor device is provided, which includes a substrate and at least one nanostructure. The substrate has sensing pixels, and each of the sensing pixels has a photo sensing region for absorbing incident light. The nanostructure is directly on the photo sensing region. The nanostructure of each of the sensing pixels has a projected portion on an upper surface of the substrate, and a circle equivalent diameter of the projected portion of the nanostructure of each of the sensing pixels is substantially within a wavelength range of 100 nm to 1900 nm of the incident light configured to enter the substrate through the nanostructure.

Abstract: The present disclosure provides a semiconductor device and a method of fabricating the semiconductor device. In some embodiments, the semiconductor device includes a substrate having a well region, a first source/drain region, a second source/drain region, a buried channel and a gate structure. The first source/drain region is located within the well region. The gate structure includes a co-doped gate including polysilicon and having a first concentration of a n-type impurity and a second concentration of a p-type impurity, in which the n-type impurity and the p-type impurity are mixed and distributed.

Abstract: A flip chip light-emitting diode (LED) package structure includes a circuit board, an electrical conducting layer and a plurality of flip chip light-emitting elements. The circuit board includes a bearing surface. The electrical conducting layer is formed on the bearing surface, and includes a plurality of electrical connection regions independent of each other. Each flip chip light-emitting element includes a p-type electrode and an n-type electrode. The p-type electrodes and the n-type electrodes of the flip chip light-emitting elements are electrically connected to the electrical connection regions, so that the flip chip light-emitting elements are electrically connected in series to form a package structure. During packaging of the flip chip light-emitting elements, the structure formed by the serial connection forms a circuit that can withstand a high voltage, and further reduce the current.

Abstract: A segment positioning belt having a flexible belt body having a positioning end and an extension. A plurality of segment positioning portions are positioned in spaced relation to each other along the extension. A metal core is integrally formed into the belt body. The metal core extends within the positioning end and the extension of the belt body. The belt body has an elongated strip shape. The belt body is formed of a rubber or polymeric material.

Abstract: An improved structure of a segment positioning belt characterized in that it includes a flexible belt body having the form of an elongated strip. The belt body made of plastic or rubber materials presents flexibility, and also has a positioning end and an extension. The positioning end is provided with a mounting portion. Several segment positioning portions are set at interval onto the belt body along its extension. A strengthened metal core is integrally located into the belt body in an elongated form, so as to cover the positioning end and extension of the belt body. The present invention enables production of tensile stress against breakage of the belt body through arrangement of the strengthened metal core, making it possible to improve the endurance of the segment positioning belt, extend its service life and enhance the safety with better anti-burglary effect.