Abstract: An oven includes an oven body, a heating element, a frame, and an oven door. The oven body has an inner space inside and includes a front plate, wherein the front plate has an entrance that communicates with the inner space. The heating element is adapted to heat the inner space. The frame is engaged with the oven body and has an abutted portion. The oven door is pivotally connected to the oven body and is located at the entrance. The oven door can pivot to a closed position to close the entrance and can pivot downward to an open position from the closed position to open the entrance. When the oven door is located at the open position, the second surface abuts against the abutted portion of the frame, thereby forming a platform outside the entrance for placing objects.

Abstract: A substrate wafer composed of a hexagonal single crystal material including a C crystalline plane, an A crystalline plane, and an M-axis direction includes a top surface is a C-axis plane; a first side connecting to the aforementioned top surface and being substantially a curve line viewing from the direction perpendicular to the aforementioned C crystalline plane and including a curvature center; and a second side connecting to the aforementioned first side; and wherein there is a line segment defined by a shortest distance between the aforementioned second side and the aforementioned curvature center, and the aforementioned line segment is not parallel with the aforementioned M-axis direction.

Abstract: A semiconductor device comprises a substrate comprising a surface area having a plurality of patterns therein, wherein the plurality of patterns comprises a plurality of first patterns and a plurality of second patterns; and a light-emitting stack formed on the substrate; wherein each of the first patterns comprises a first feature length and each of the second patterns comprises a second feature length smaller than the first feature length, and wherein, in a square area of 30 microns by 30 microns chosen from the surface area, an amount of the plurality of the first patterns is more than that of the plurality of the second patterns.

Abstract: A semiconductor device comprises a substrate comprising a surface area having a plurality of patterns therein, wherein the plurality of patterns comprises a plurality of first patterns and a plurality of second patterns; and a light-emitting stack formed on the substrate; wherein each of the first patterns comprises a first feature length and each of the second patterns comprises a second feature length smaller than the first feature length, and wherein, in a square area of 30 microns by 30 microns chosen from the surface area, an amount of the plurality of the first patterns is more than that of the plurality of the second patterns.

Abstract: A substrate wafer composed of a hexagonal single crystal material including a C crystalline plane, an A crystalline plane, and an M-axis direction includes a top surface is a C-axis plane; a first side connecting to the aforementioned top surface and being substantially a curve line viewing from the direction perpendicular to the aforementioned C crystalline plane and including a curvature center; and a second side connecting to the aforementioned first side; and wherein there is a line segment defined by a shortest distance between the aforementioned second side and the aforementioned curvature center, and the aforementioned line segment is not parallel with the aforementioned M-axis direction.

Abstract: A light-emitting device comprises: a conductive substrate; a conductive structure formed on the substrate, defining a first region and a second region laterally adjacent to the first region; a light-emitting structure formed on the first region; and a dielectric structure comprising a first dielectric layer and a second dielectric layer within the second region.

Abstract: A method for manufacturing a light-emitting device comprising the steps of: providing a first substrate, a chip area, and a street area; forming a light-emitting structure on the first substrate; forming a conductive structure between the first substrate and the light-emitting structure; removing a part of the light-emitting structure in the street area to expose a sidewall of the light-emitting structure in the chip area; forming a first passivation layer on the light-emitting structure in the chip area; forming a second passivation layer on the conductive structure in the street area, on the sidewalls of the light-emitting structure, and on the sidewalls of the first passivation layer; forming a through-hole in the first passivation layer, and forming an electrode in the through-hole.

Abstract: The present application provides a method of manufacturing an optoelectronic semiconductor device, comprising the steps of: providing a substrate; forming an optoelectronic system on the substrate; forming a barrier layer on the optoelectronic system; forming an electrode on the barrier layer; and annealing the optoelectronic semiconductor device; wherein the optoelectronic semiconductor device has a first forward voltage before the annealing step and has a second forward voltage after the annealing step, and a difference between the second forward voltage and the first forward voltage is smaller than 0.2 Volt.

Abstract: The present application provides a method of manufacturing an optoelectronic semiconductor device, comprising the steps of: providing a substrate; forming an optoelectronic system on the substrate; forming a barrier layer on the optoelectronic system; forming an electrode on the barrier layer; and annealing the optoelectronic semiconductor device; wherein the optoelectronic semiconductor device has a first forward voltage before the annealing step and has a second forward voltage after the annealing step, and a difference between the second forward voltage and the first forward voltage is smaller than 0.2 Volt.

Abstract: The present application provides an optoelectronic semiconductor device, comprising: a substrate; an optoelectronic system on the substrate; a barrier layer on the optoelectronic system, wherein the barrier layer thickness is not smaller than 10 angstroms; and an electrode on the barrier layer.

Abstract: A light-emitting device and method for manufacturing the same are described. A method for manufacturing a light-emitting device comprising the steps of: providing a substrate; forming a light-emitting structure on the substrate, wherein the light-emitting structure comprising a plurality of chip areas and a plurality of street areas; forming a conductive structure between the substrate and the light-emitting structure; removing a part of the light-emitting structure in the street areas to expose a sidewall in the chip areas; forming a first passivation layer on the light-emitting structure in the chip areas; and forming a second passivation layer in the street areas, the sidewalls of the light-emitting structure, and the sidewalls of the first passivation layer.

Abstract: A method for growing a Group III-V nitride film and a structure thereof are presented. The method is carried out by hydride vapor phase epitaxy (HVPE). The method includes the steps of, inter alia, slowly epitaxially growing a temperature ramping nitride layer on a substrate by rising a first growth temperature of 900-950° C. to a second growth temperature of 1000-1050° C. at a temperature-rising rate of 0.5-10° C./min. The lattice quality of the temperature ramping nitride layer is slowly transformed with the layer height, so that a stress induced by lattice mismatch between a sapphire substrate and a gallium nitride (GaN) layer is relieved.

Abstract: The invention discloses etching method for the nitride semiconductor. Firstly dielectric layer is formed on gallium nitride. The line pattern or dot pattern is formed on the dielectric layer by using the exposure, development, and etching processes. The dielectric layer is used as the mask for the epitaxial lateral overgrowth of follow-up gallium nitride layer. The thick gallium nitride film is grown on the dielectric layer. Then the wet etching process is used to remove the dielectric layer, and the thick gallium nitride film on the dielectric layer is etched to form the specific shape as required.

Abstract: A method for growing a Group III-V nitride film and a structure thereof are presented. The method is carried out by hydride vapor phase epitaxy (HVPE). The method includes the steps of, inter alia, slowly epitaxially growing a temperature ramping nitride layer on a substrate by rising a first growth temperature of 900-950° C. to a second growth temperature of 1000-1050° C. at a temperature-rising rate of 0.5-10° C./min. The lattice quality of the temperature ramping nitride layer is slowly transformed with the layer height, so that a stress induced by lattice mismatch between a sapphire substrate and a gallium nitride (GaN) layer is relieved.

Abstract: The invention discloses etching method for the nitride semiconductor. Firstly dielectric layer is formed on gallium nitride. The line pattern or dot pattern is formed on the dielectric layer by using the exposure, development, and etching processes. The dielectric layer is used as the mask for the epitaxial lateral overgrowth of follow-up gallium nitride layer. The thick gallium nitride film is grown on the dielectric layer. Then the wet etching process is used to remove the dielectric layer, and the thick gallium nitride film on the dielectric layer is etched to form the specific shape as required.

Abstract: A gas control knob includes a valve body, a valve seat mounted on the valve body, a control lever movably mounted in the valve seat and movable by a pressing action to regulate a gas flow rate of the valve body, a fixing bracket mounted on the valve body, a motor mounted on the fixing bracket, a transmission mechanism mounted on the fixing bracket and driven by the motor, and a linear displacement mechanism mounted on the fixing bracket and driven by the transmission mechanism to perform a linear motion to press the control lever to regulate the gas flow rate of the valve body automatically. Thus, the gas control knob is operated and controlled automatically, thereby facilitating a user operating the gas control knob.

Abstract: A gas control knob includes a main body having a gas inlet hole and a gas outlet hole, a throttling cock rotatably mounted in the main body to regulate the gas flow rate between the gas inlet hole and the gas outlet hole of the main body, a rotation lever rotatably mounted on the main body to rotate the throttling cock, and a motor mounted on a fixing bracket to drive a transmission mechanism automatically which drives a clutch mechanism to drive and rotate the rotation lever to rotate the throttling cock. Thus, the gas control knob is operated manually or automatically, thereby facilitating a user operating the gas control knob.

Abstract: A gas control knob includes a valve body, a valve cap, a rotation lever, a cam, and a spring. Thus, when the rotation lever is rotated to regulate the gas flow rate, the engaging tooth of the cam is axially and reciprocally movable on the toothed face of the track of the valve cap synchronously to produce vibration and sound during rotation of the rotation lever, thereby providing a notification function to the user so as to assure the safety when using the gas stove.

Abstract: A gas control knob for a gas stove includes a main body having a gas chamber connected between a gas inlet hole and a gas outlet hole, a throttling cock rotatably mounted in the main body to regulate a gas flow rate between the gas inlet hole and the gas chamber, and an electromagnetic valve mounted on the main body to control connection between the gas chamber and the gas outlet hole of the main body. Thus, the electromagnetic valve is operated to open or close the fire automatically after the rotation lever is rotated to a determined extent, thereby facilitating a user opening or closing the fire of the gas stove.

Abstract: A gas control knob includes a main body having a gas inlet hole and a gas outlet hole, a throttling cock rotatably mounted in the main body to regulate the gas flow rate between the gas inlet hole and the gas outlet hole of the main body, a rotation lever rotatably mounted on the main body to rotate the throttling cock, and a motor mounted on a fixing bracket to drive a transmission mechanism automatically which drives a clutch mechanism to drive and rotate the rotation lever to rotate the throttling cock. Thus, the gas control knob is operated manually or automatically, thereby facilitating a user operating the gas control knob.