Abstract: A MEMS (Micro-Electro-Mechanical-System) structure preventing stiction, comprising: a substrate; and at least two structural layers above the substrate, wherein at least one of the at least two structural layers is a movable part, and anyone or more of the at least two structural layers is provided with at least one bump to prevent the movable part from sticking to another portion of the MEMS structure.

Abstract: A MEMS package structure, including a substrate, an interconnecting structure, an upper metallic layer, a deposition element and a packaging element is provided. The interconnecting structure is disposed on the substrate. The MEMS structure is disposed on the substrate and within a first cavity. The upper metallic layer is disposed above the MEMS structure and the interconnecting structure, so as to form a second cavity located between the upper metallic layer and the interconnecting structure and communicates with the first cavity. The upper metallic layer has at least a first opening located above the interconnecting structure and at least a second opening located above the MEMS structure. Area of the first opening is greater than that of the second opening. The deposition element is disposed above the upper metallic layer to seal the second opening. The packaging element is disposed above the upper metallic layer to seal the first opening.

Abstract: An optoelectronic device includes: a substrate made of a first material; a region in the substrate, the region being made of a second material different from the first material; an N-well in the region made of the second material; and a photo diode formed in the region by ion implantation. The second material for example is silicon germanium (Si1-xGex) or silicon carbide (Si1-yCy) wherein 0<x,y<1.

Abstract: A MEMS package structure, including a substrate, an interconnecting structure, an upper metallic layer, a deposition element and a packaging element is provided. The interconnecting structure is disposed on the substrate. The MEMS structure is disposed on the substrate and within a first cavity. The upper metallic layer is disposed above the MEMS structure and the interconnecting structure, so as to form a second cavity located between the upper metallic layer and the interconnecting structure and communicates with the first cavity. The upper metallic layer has at least a first opening located above the interconnecting structure and at least a second opening located above the MEMS structure. Area of the first opening is greater than that of the second opening. The deposition element is disposed above the upper metallic layer to seal the second opening. The packaging element is disposed above the upper metallic layer to seal the first opening.

Abstract: The present invention discloses a MEMS (Micro-Electro-Mechanical System) integrated chip with cross-area interconnection, comprising: a substrate; a MEMS device area on the substrate; a microelectronic device area on the substrate; a guard ring separating the MEMS device area and the microelectronic device area; and a conductive layer on the surface of the substrate below the guard ring, or a well in the substrate below the guard ring, as a cross-area interconnection electrically connecting the MEMS device area and the microelectronic device area.

Abstract: The present invention discloses a MEMS (Micro-Electro-Mechanical System) integrated chip with cross-area interconnection, comprising: a substrate; a MEMS device area on the substrate; a microelectronic device area on the substrate; a guard ring separating the MEMS device area and the microelectronic device area; and a conductive layer on the surface of the substrate below the guard ring, or a well in the substrate below the guard ring, as a cross-area interconnection electrically connecting the MEMS device area and the microelectronic device area.

Abstract: A method for fabricating a MEMS resonator is provided. A stacked main body including a silicon substrate, a plurality of metallic layers and an isolation layer is formed and has a first etching channel extending from the metallic layers into the silicon substrate. The isolation layer is filled in the first etching channel. The stacked main body also has a predetermined suspended portion. Subsequently, a portion of the isolation layer is removed so that a second etching channel is formed and the remained portion of the isolation layer covers an inner sidewall of the first etching channel. Afterwards, employing the isolation layer that covers the inner sidewall of the first etching channel as a mask, an isotropic etching process through the second etching channel is applied to the silicon substrate, thereby forming the MEMS resonator suspending above the silicon substrate. A micro electronic device is also provided.

Abstract: A microelectronic device including a substrate, at least a semi-conductor element, an anti metal ion layer, a non-doping oxide layer and a MEMS structure is provided. The substrate has a CMOS circuit region and a MEMS region. The semi-conductor element is configured within the CMOS circuit region of the substrate. The anti metal ion layer is disposed within the CMOS circuit region of the substrate and covers the semi-conductor element. The non-doping oxide layer is disposed on the substrate within the MEMS region. The MEMS structure is partially suspended above the non-doping oxide layer. The present invention also provides a MEMS package structure and a fabricating method thereof.

Abstract: The present invention discloses a MEMS (Micro-Electro-Mechanical System) chip and a method for making the MEMS chip. The MEMS chip comprises: a first substrate having a first surface and a second surface opposing each other; a microelectronic device area on the first surface; a first MEMS device area on the second surface; and a conductive interconnection structure electrically connecting the microelectronic device area and the first MEMS device area.

Abstract: The present invention discloses a MEMS lithography mask with improved tungsten deposition topography and a method for making the same. The MEMS lithography mask includes: a pattern including at least two sections forming a conjunction with each other, each of the at least two sections having a width not less than a minimum width, the conjunction having a center and a plurality of corners, wherein at least one of the corners is inwardly recessed to reduce a width of the conjunction, the sections being for defining trenches on a substrate to be filled with tungsten as apart of a MEMS device, whereby the lowest height of the tungsten surface is not lower than 80% of the trench height.

Abstract: A fabricating method of a microelectronic device including the following steps is provided. First, a substrate is provided. Second, a semi-conductor element is formed in a CMOS circuit region of the substrate. Next, a plurality of metallic layer, a plurality of contact plugs and a plurality of oxide layer are formed on the substrate. The metallic layers and the oxide layers are interlaced with each other and the contact plugs are formed in the oxide layers and connected with the metallic layers correspondingly so as to form a micro electromechanical system (MEMS) structure within a MEMS region and an interconnecting structure within the CMOS circuit region. Then, a first protective layer is formed on at least one of the oxide layers and a second protective layer is formed on the interconnecting structure. Predetermined portions of the oxide layers located within the MEMS region are removed and thereby the MEMS structure is partially suspended above the substrate.

Abstract: The present invention discloses an optical MEMS detector, comprising: a substrate; at least one photo diode in a region within the substrate; an isolation wall above the substrate and surrounding the photo diode region; and at least one movable part having an opening for light to pass through and reach the photo diode, wherein when the at least one movable part is moved, an amount of light reaching the photo diode is changed.

Abstract: A method for fabricating a MEMS resonator is provided. A stacked main body including a silicon substrate, a plurality of metallic layers and an isolation layer is formed and has a first etching channel extending from the metallic layers into the silicon substrate. The isolation layer is filled in the first etching channel. The stacked main body also has a predetermined suspended portion. Subsequently, a portion of the isolation layer is removed so that a second etching channel is formed and the remained portion of the isolation layer covers an inner sidewall of the first etching channel. Afterwards, employing the isolation layer that covers the inner sidewall of the first etching channel as a mask, an isotropic etching process through the second etching channel is applied to the silicon substrate, thereby forming the MEMS resonator suspending above the silicon substrate.

Abstract: The present invention discloses a color filter by copper and silver film, comprising: a lower copper layer; a lower silver layer formed on the lower copper layer; a medium formed on the lower silver layer; an upper copper layer formed on the medium; and an upper silver layer formed on the upper copper layer.

Abstract: A MEMS package structure, including a substrate, an interconnecting structure, an upper metallic layer, a deposition element and a packaging element is provided. The interconnecting structure is disposed on the substrate. The MEMS structure is disposed on the substrate and within a first cavity. The upper metallic layer is disposed above the MEMS structure and the interconnecting structure, so as to form a second cavity located between the upper metallic layer and the interconnecting structure and communicates with the first cavity. The upper metallic layer has at least a first opening located above the interconnecting structure and at least a second opening located above the MEMS structure. Area of the first opening is greater than that of the second opening. The deposition element is disposed above the upper metallic layer to seal the second opening. The packaging element is disposed above the upper metallic layer to seal the first opening.

Abstract: A method for fabricating MEMS package structure includes the following steps. Firstly, a substrate is provided. Next, a plurality of lower metallic layers and first oxide layers are formed to compose a MEMS structure and an interconnecting structure. Next, an upper metallic layer is formed on the MEMS structure and the interconnecting structure. The upper metallic layer has a first opening and a second opening. Next, the first opening and the second opening are employed as etching channels to remove a portion of the first oxide layers so as to form a first cavity surrounding the MEMS structure and form a second cavity above the interconnecting structure. The first cavity communicates with the second cavity. Next, the second opening is sealed in a vacuum environment. Next, a packaging element is formed on the upper metallic layer in a non-vacuum environment to seal the first opening.

Abstract: The present invention discloses a color filter by copper and silver film, comprising: a lower copper layer; a lower silver layer formed on the lower copper layer; a medium formed on the lower silver layer; an upper copper layer formed on the medium; and an upper silver layer formed on the upper copper layer.

Abstract: A method for manufacturing an antenna includes steps as follows. First, a substrate is provided, wherein a surface of the substrate has an antenna region. Then, the surface of the substrate is electroless plated with a metal medium, so that the surface is covered with the metal medium. Then, the metal medium is covered with a resist. Then, a portion of the resist in the antenna region is removed. Then, the antenna region is electroplated with metal material to form an antenna main body. Then, a remaining portion of the resist is removed, and excluding a portion of the metal medium in the antenna region, the other portion of the metal medium is also removed from the substrate.

Abstract: A micro electromechanical system (MEMS) spring element is disposed on a substrate, and includes a fixing portion and a moveable portion. The fixing portion is fixed on the substrate, and includes an insulating layer, a plurality of metal-fixing layers and a plurality of supporting-fixing layers. The insulating layer is disposed on the substrate. The metal-fixing layers are disposed above the insulating layer. The supporting-fixing layers are connected between the metal-fixing layers. The moveable portion has a first end and a second end. The first end is connected with the fixing portion, and the second end is suspended above the substrate. The moveable portion includes a plurality of metal layers and at least a supporting layer. The supporting layer is connected between the adjacent metal layers, and a hollow region is formed between the supporting layer and the adjacent metal layers.

Abstract: A method for forming an antenna structure is provided, including the following steps of: providing a non-conductive frame and disposing a plating resist material on the non-conductive frame, removing a part of the plating resist material within a predetermined region on the non-conductive frame and forming a roughened surface on the non-conductive frame within the predetermined region by laser marking, forming a medium layer on the roughened surface, wherein the medium layer comprises Pd or Ag, removing the plating resist material on the non-conductive frame, and forming a metal layer on the medium layer.