Abstract: The present invention discloses a MEMS device with guard ring, and a method for making the MEMS device. The MEMS device comprises a bond pad and a sidewall surrounding and connecting with the bond pad, characterized in that the sidewall forms a guard ring by an etch-resistive material.

Abstract: According to the present invention, a method for making a micro-electro-mechanical system (MEMS) device comprises: providing a substrate with devices and interconnection formed thereon, the substrate having a to-be-etched region; depositing and patterning an etch stop layer; depositing and patterning metal and via layers to form an MEMS structure, the MEMS structure including an isolation region between MEMS parts, an isolation region exposed upwardly, and an isolation region exposed downwardly, wherein the isolation region exposed downwardly is in contact with the etch stop layer; masking the isolation region exposed upwardly, and removing the isolation region between MEMS parts; and removing the etch stop layer.

Abstract: A supporting device of the invention comprises a main body, a shaft, and a rotating component. The main body comprises a sliding path and an opening. The shaft and the rotating component can slide along the sliding path. The rotating component is connected to the shaft. The shaft and at least a part of the rotating component can then be extended beyond the main body through the opening. Through the aforementioned configuration, the shaft can rotate with respect to the main body when the shaft and at least a part of the rotating component are extended beyond the main body.

Abstract: According to the present invention, a method for making a micro-electro-mechanical system (MEMS) device comprises: providing a substrate with devices and interconnection formed thereon, the substrate having a to-be-etched region; depositing and patterning an etch stop layer; depositing and patterning metal and via layers to form an MEMS structure, the MEMS structure including an isolation region between MEMS parts, an isolation region exposed upwardly, and an isolation region exposed downwardly, wherein the isolation region exposed downwardly is in contact with the etch stop layer; masking the isolation region exposed upwardly, and removing the isolation region between MEMS parts; and removing the etch stop layer.

Abstract: A salicide process is described, wherein a substrate with an NMOS transistor and a PMOS transistor thereon is provided. A mask layer is formed over the substrate covering the PMOS transistor but exposing the NMOS transistor, and then a pre-amorphization implantation (PAI) step is conducted to the substrate using the mask layer as a mask. After the mask layer is removed, a salicide layer is formed on the NMOS transistor and the PMOS transistor.

Abstract: A method of forming a contact pad on a semiconductor wafer is achieved. A first photoresist layer is formed on the surface of a substrate, expect in a region where the contact pad will be formed. A nitrogen ion implantation is performed on the substrate uncovered by the first photoresist layer, followed by the complete removal of the first photoresist layer. Next, a silicon oxide layer is grown on the substrate, except in the region for the formation of the contact pad. Two adjacent MOS transistors are formed on the silicon oxide layer. A conductive layer is formed on the surface of the substrate to cover the two MOS transistors as well as to fill in the gap between the two MOS transistors. A patterned second photoresist layer is subsequently formed on the surface of the conductive layer to define the patterns of the contact pad.

Abstract: The present invention provides a method of reducing resistance in an Al-containing conductor. An Al oxide layer is first formed on the surface of an Al-containing conductor followed by the formation of a Ti layer and a barrier layer above the Al oxide layer, respectively. Finally, a W contact plug is formed within the barrier layer. The Al oxide layer functions in preventing a reaction between the Ti layer and the conductor during high temperature formation of the W contact plugs to avoid the influence of resistance in the Al-containing conductor.