Abstract: Some embodiments relate to a method for forming an integrated chip, the method includes forming a first conductive wire and a second conductive wire over a substrate. A dielectric structure is formed laterally between the first conductive wire and the second conductive wire. The dielectric structure comprises a first dielectric liner, a dielectric layer disposed between opposing sidewalls of the first dielectric liner, and a void between an upper surface of the first dielectric liner and a lower surface of the dielectric layer. A dielectric capping layer is formed along an upper surface of the dielectric structure. Sidewalls of the dielectric capping layer are aligned with sidewalls of the dielectric structure.

Abstract: Securing a riser cage and/or electronic components coupled thereto within an information handling system can be accomplished using a riser cage apparatus. The riser cage may be configured to removably secure the electronic components to a surface of the information handling system using one or more fasteners configured to couple the riser cage to a surface of a chassis. The one or more fasteners may comprise a protrusion configured to engage a pin coupled to the surface. The protrusion of the one or more fasteners may be movable relative to the riser cage between a first locked position in which the pin coupled to the surface is engaged by the protrusion and a second unlocked position in which the pin coupled to the surface is not engaged by the protrusion.

Abstract: A method for manufacturing a semiconductor structure includes preparing a dielectric structure formed with trenches respectively defined by lateral surfaces of the dielectric structure, forming spacer layers on the lateral surfaces, filling an electrically conductive material into the trenches to form electrically conductive features, selectively depositing a blocking layer on the dielectric structure, selectively depositing a dielectric material on the electrically conductive features to form a capping layer, removing the blocking layer and the dielectric structure to form recesses, forming sacrificial features in the recesses, forming a sustaining layer to cover the sacrificial features; and removing the sacrificial features to obtain the semiconductor structure formed with air gaps confined by the sustaining layer and the spacer layers.

Abstract: In some embodiments, the present disclosure relates to an integrated chip. The integrated chip may comprise a first metal line disposed over a substrate. A via may be disposed directly over a top of the first metal line and the via may comprise a first lower surface and a second lower surface above the first lower surface. A first dielectric structure may be disposed laterally adjacent to the first metal line and may be disposed along a sidewall of the first metal line. A first protective etch-stop structure may be disposed directly over a top of the first dielectric structure and the first protective etch-stop structure may vertically separate the second lower surface of the via from the top of the first dielectric structure.

Abstract: A method of forming an integrated circuit, including forming a n-type doped well (N-well) and a p-type doped well (P-well) disposed side by side on a semiconductor substrate, forming a first fin active region extruded from the N-well and a second fin active region extruded from the P-well, forming a first isolation feature inserted between and vertically extending through the N-well and the P-well, and forming a second isolation feature over the N-well and the P-well and laterally contacting the first and the second fin active regions.

Abstract: A semiconductor device and a method of manufacturing the semiconductor device are provided. The semiconductor device includes a substrate, a word line, a first capacitor, a second capacitor, a first bit line and a second bit line. The word line is disposed on the substrate and extends along a first direction. The first capacitor extends along a second direction different from the first direction and is located at a first level. The second capacitor extends along the second direction and is located at a second level different from the first level. The first bit line is electrically connected to the first capacitor and the word line. The second bit line is electrically connected to the second capacitor and the word line.

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a substrate, a word line, a first capacitor, a second capacitor, a first bit line and a second bit line. The word line is disposed on the substrate and extends along a first direction. The first capacitor extends along a second direction different from the first direction and is located at a first level. The second capacitor extends along the second direction and is located at a second level different from the first level. The first bit line is electrically connected to the first capacitor and the word line. The second bit line is electrically connected to the second capacitor and the word line.

Abstract: A memory device includes a substrate, a first transistor and a second transistor, a first word line, a second word line, and a bit line. The first transistor and the second transistor are over the substrate and are electrically connected to each other, in which each of the first and second transistors includes first semiconductor layers and second semiconductor layers, a gate structure, and source/drain structures, in which the first semiconductor layers are in contact with the second semiconductor layers, and a width of the first semiconductor layers is narrower than a width of the second semiconductor layers. The first word line is electrically connected to the gate structure of the first transistor. The second word line is electrically connected to the gate structure of the second transistor. The bit line is electrically connected to a first one of the source/drain structures of the first transistor.

Abstract: Examples of an integrated circuit with an interconnect structure and a method for forming the integrated circuit are provided herein. In some examples, the method includes receiving a workpiece that includes a substrate and an interconnect structure. The interconnect structure includes a first conductive feature disposed within a first inter-level dielectric layer. A blocking layer is selectively formed on the first conductive feature without forming the blocking layer on the first inter-level dielectric layer. An alignment feature is selectively formed on the first inter-level dielectric layer without forming the alignment feature on the blocking layer. The blocking layer is removed from the first conductive feature, and a second inter-level dielectric layer is formed on the alignment feature and on the first conductive feature. The second inter-level dielectric layer is patterned to define a recess for a second conductive feature, and the second conductive feature is formed within the recess.

Abstract: An interconnect structure includes a dielectric layer, a first conductive feature, a hard mask layer, a conductive layer, and a capping layer. The first conductive feature is disposed in the dielectric layer. The hard mask layer is disposed on the first conductive feature. The conductive layer includes a first portion and a second portion, the first portion of the conductive layer is disposed over at least a first portion of the hard mask layer, and the second portion of the conductive layer is disposed over the dielectric layer. The hard mask layer and the conductive layer are formed by different materials. The capping layer is disposed on the dielectric layer and the conductive layer.

Abstract: A method for manufacturing a semiconductor structure includes preparing a dielectric structure formed with trenches respectively defined by lateral surfaces of the dielectric structure, forming spacer layers on the lateral surfaces, filling an electrically conductive material into the trenches to form electrically conductive features, selectively depositing a blocking layer on the dielectric structure, selectively depositing a dielectric material on the electrically conductive features to form a capping layer, removing the blocking layer and the dielectric structure to form recesses, forming sacrificial features in the recesses, forming a sustaining layer to cover the sacrificial features; and removing the sacrificial features to obtain the semiconductor structure formed with air gaps confined by the sustaining layer and the spacer layers.

Abstract: Securing a riser cage and/or electronic components coupled thereto within an information handling system can be accomplished using a riser cage apparatus. The riser cage may be configured to removably secure the electronic components to a surface of the information handling system using one or more fasteners configured to couple the riser cage to a surface of a chassis. The one or more fasteners may comprise a protrusion configured to engage a pin coupled to the surface. The protrusion of the one or more fasteners may be movable relative to the riser cage between a first locked position in which the pin coupled to the surface is engaged by the protrusion and a second unlocked position in which the pin coupled to the surface is not engaged by the protrusion.

Abstract: A contact arrangement, including multiple contacts, is provided. The contacts are staggered. Some of the contacts form at least one contact group. The at least one contact group includes a pair of first contacts and eight second contacts. The pair of first contacts is a pair of differential signal contacts. The second contacts are arranged around the pair of first contacts. Two of the second contacts are arranged along a straight line perpendicular to a connecting line of the pair of first contacts. The position distribution and electrical properties of the other six of the second contacts are symmetrical to each other relative to the straight line.

Abstract: A contact arrangement, including multiple contacts, is provided. The contacts are staggered. Some of the contacts form at least one contact group. The at least one contact group includes a first contact and six second contacts. The second contacts are arranged around the first contact. When the first contact is a power contact or a ground contact, the second contacts are signal contacts. When the first contact is a signal contact, three of the second contacts are power contacts or ground contacts and are not adjacent to each other.

Abstract: A contact arrangement, including multiple contacts, is provided. The contacts are staggered. Some of the contacts form at least one contact group. The at least one contact group includes a pair of first contacts and eight second contacts. The pair of first contacts is a pair of differential signal contacts. The second contacts are arranged around the pair of first contacts. Two of the second contacts are arranged along a straight line perpendicular to a connecting line of the pair of first contacts. The position distribution and electrical properties of the other six of the second contacts are symmetrical to each other relative to the straight line.

Abstract: A contact arrangement, including multiple contacts, is provided. The contacts are staggered. Some of the contacts form at least one contact group. The at least one contact group includes a first contact and six second contacts. The second contacts are arranged around the first contact. When the first contact is a power contact or a ground contact, the second contacts are signal contacts. When the first contact is a signal contact, three of the second contacts are power contacts or ground contacts and are not adjacent to each other.

Abstract: A venting grate includes a main portion, a first venting area, and a second venting area. The first venting area is defined by first, second, third, and fourth edges. Each of the first, second, third, and fourth edges extend from the main portion. The second venting area is defined by fifth, sixth, seventh, and eighth edges. Each of the fifth, sixth, seventh, and eighth edges extend from the main portion. The third edge and the fifth edge extend away from the main portion of the venting grate and angle together to form a pointed edge between the first and second venting areas.

Abstract: A chip package includes a chip structure, a molding material, a conductive layer, a redistribution layer, and a passivation layer. The chip structure has a front surface, a rear surface, a sidewall, a sensing area, and a conductive pad. The molding material covers the rear surface and the sidewall. The conductive layer extends form the conductive pad to the molding material located on the sidewall. The redistribution layer extends form the molding material that is located on the rear surface to the molding material that is located on the sidewall. The redistribution layer is in electrical contact with an end of the conductive layer facing away from the conductive pad. The passivation layer is located on the molding material and the redistribution layer. The passivation layer has an opening, and a portion of the redistribution layer is located in the opening.

Abstract: A chip package includes a sensing chip, a computing chip, and a protective layer annularly surrounding the sensing chip and the computing chip. The sensing chip has a first conductive pad, a sensing element, a first surface and a second surface opposite to each other. And the sensing element is disposed on the first surface. The computing chip has a second conductive pad and a computing element. The protective layer is formed by lamination and at least exposes the sensing element. The chip package further includes a conductive layer underneath the second surface of the sensing chip and extending to be in contact with the first conductive pad and the second conductive pad.

Abstract: A target object tracking method applied in an aerial vehicle which has a tripod head and a camera connected to the tripod head includes steps of obtaining coordinates of a target object from the target object itself and controlling the aerial vehicle to fly towards such coordinates. Images of the target object are obtained from the camera when the aerial vehicle has reached the target object, and further images are obtained at different time points, to determine a moving direction of the target object. The tripod head is rotated according to the determined moving direction, thereby controlling the camera to keep focusing on and tracking the target object.