Abstract: An embodiment of the invention discloses an optoelectronic system comprising a plurality of optoelectronic elements, wherein each of the plurality of optoelectronic elements comprises a semiconductor epitaxial layer, a first electrode, a second electrode, a top surface, a bottom surface, and a plurality of lateral surfaces arranged between the top surface and the bottom surface; a layer covering the plurality of lateral surfaces and comprising a side surface; and a reflecting structure having a shape of pyramid, formed between two adjacent optoelectronic elements of the plurality of optoelectronic elements and electrically separated from the plurality of optoelectronic elements, wherein the reflecting structure is configured to reflect light from the two adjacent optoelectronic elements upwards to leave the optoelectronic system.

Abstract: A light-emitting device includes a first light-emitting module, a second light-emitting module, a conductive layer and an insulation layer. The first light-emitting module includes a first substrate having a first cavity, a first sidewall, and a light-emitting component disposed on the first substrate. The second module includes a second substrate having a second cavity corresponding to the first cavity and a second sidewall corresponding to the first sidewall. The conductive layer is directly connected to the first cavity and the second cavity and electrically connect the first light-emitting module and the second light-emitting module. The insulation layer is directly connected to the first sidewall and the second sidewall.

Abstract: A light-emitting device, includes a substrate with a top surface; a first light-emitting structure unit and a second light-emitting structure unit separately formed on the top surface and adjacent to each other, and wherein the first light-emitting structure unit includes a first sidewall and a second sidewall; a trench between the first and the second light-emitting structure units; and an electrical connection arranged on the first sidewall and the second light-emitting structure unit, and electrically connecting the first light-emitting structure unit and the second light-emitting structure unit; wherein the first sidewall connects to the top surface; wherein the first sidewall faces the second light-emitting structure units, and the second sidewall is not between the first light-emitting structure unit and the second light-emitting structure unit; and wherein the second sidewall is steeper than the first sidewall.

Abstract: A light-emitting device includes a light-emitting element having a first-type semiconductor layer, a second-type semiconductor layer, an active stack between the first-type semiconductor layer and the second-type semiconductor layer, a bottom surface, and a top surface. A first electrode is disposed on the bottom surface and electrically connected to the first-type semiconductor layer. A second electrode is disposed on the bottom surface and electrically connected to the second-type semiconductor layer. A supporting structure is disposed on the top surface. The supporting structure has a thickness and a maximum width. A ratio of the maximum width to the thickness is of 2˜150.

Abstract: A light-emitting device includes a supportive substrate and a first light-emitting element on the supportive substrate. The first light-emitting element includes a first light-emitting stacked layer having a first surface and a second surface opposite to the first surface, and a first transparent layer on the first surface and electrically connected to the first light-emitting stacked layer. A second light-emitting element locates on the supportive substrate and a metal layer electrically connects to the first light-emitting element and the second light-emitting element and physically connects to the first transparent layer. The first light-emitting stacked layer includes a first width and the first transparent layer includes a second width different from the first width from a cross section view of the light-emitting device.

Abstract: Disclosed herein is a light-emitting device.

Abstract: The light-emitting diode package includes a plurality of bumps being a couple corresponding to each other. Each of the bumps has a first part and a second part placed under the first part, and a gap is formed between the bumps in a period-repeating wriggle shape or an irregular wriggle shape. Accordingly, the distance between the bumps of the light-emitting diode package is small, which results in a less stress being concentrated at the space between the bumps, as a result, a crack is difficultly caused by the stress to the light-emitting diode package. In other words, the structural strength between the bumps and the covering part is enhanced. Still, while being manufactured, the yield rate of the light-emitting diode package is also improved since there is almost no crack to reduce the yield rate.

Abstract: A sensing device includes a first III-V compound stack and a second III-V compound stack. The first III-V compound stack has a first sensing area, and the second III-V compound stack has a second sensing area. A passivation layer fully covers the second sensing area. The first III-V compound stack is physically separated from the second III-V compound stack, and has material compositions and structures same as the second III-V compound stack.

Abstract: The disclosure discloses an optoelectronic element comprising: an optoelectronic unit comprising a first metal layer, a second metal layer, and an outermost lateral surface; an insulating layer having a first portion overlapping the optoelectronic unit and extending beyond the lateral surface, and a second portion separated from the first portion in a cross-sectional view; and a first conductive layer formed on the insulating layer.

Abstract: A light-emitting device includes a light-emitting element having a first-type semiconductor layer, a second-type semiconductor layer, an active stack between the first-type semiconductor layer and the second-type semiconductor layer, a bottom surface, and a top surface. A first electrode is disposed on the bottom surface and electrically connected to the first-type semiconductor layer. A second electrode is disposed on the bottom surface and electrically connected to the second-type semiconductor layer. A supporting structure is disposed on the top surface. The supporting structure has a thickness and a maximum width. A ratio of the maximum width to the thickness is of 2˜150.

Abstract: Disclosed is a die-bonding method which provides a target substrate having a circuit structure with multiple electrical contacts and multiple semiconductor elements each semiconductor element having a pair of electrodes, arranges the multiple semiconductor elements on the target substrate with the pair of electrodes of each semiconductor element aligned with two corresponding electrical contacts of the target substrate, and applies at least one energy beam to join and electrically connect the at least one pair of electrodes of every at least one of the multiple semiconductor elements and the corresponding electrical contacts aligned therewith in a heating cycle by heat carried by the at least one energy beam in the heating cycle. The die-bonding method delivers scattering heated dots over the target substrate to avoid warpage of PCB and ensures high bonding strength between the semiconductor elements and the circuit structure of the target substrate.

Abstract: Disclosed is a die-bonding method which provides a target substrate having a circuit structure with multiple electrical contacts and multiple semiconductor elements each semiconductor element having a pair of electrodes, arranges the multiple semiconductor elements on the target substrate with the pair of electrodes of each semiconductor element aligned with two corresponding electrical contacts of the target substrate, and applies at least one energy beam to join and electrically connect the at least one pair of electrodes of every at least one of the multiple semiconductor elements and the corresponding electrical contacts aligned therewith in a heating cycle by heat carried by the at least one energy beam in the heating cycle. The die-bonding method delivers scattering heated dots over the target substrate to avoid warpage of PCB and ensures high bonding strength between the semiconductor elements and the circuit structure of the target substrate.

Abstract: The disclosure discloses an optoelectronic element comprising: an optoelectronic unit comprising a first metal layer, a second metal layer, and an outermost lateral surface; an insulating layer having a first portion overlapping the optoelectronic unit and extending beyond the lateral surface, and a second portion separated from the first portion in a cross-sectional view; and a first conductive layer formed on the insulating layer.

Abstract: A light-emitting device includes a light-emitting element, a supporting structure, a first wavelength conversion structure, and a light-absorbing layer. The light-emitting element includes a plurality of active stacks separated from each other, a first-type semiconductor layer continuously arranged on the plurality of active stacks, and a plurality of second-type semiconductor layers under the plurality of active stacks. The supporting structure is disposed on the light-emitting element and includes a first opening. The first wavelength conversion structure disposed in the first opening. The light-absorbing layer disposed on the top surface of the supporting structure.

Abstract: A sensing apparatus includes a sensing device having a hetero-junction structure, a light coupler connected to the sensing device and a readout device connected to the light coupler.

Abstract: The present disclosure provides a light emitting device including an LED array including a plurality of LED cells connected in series disposed on a single substrate; wherein each LED cell includes a first edge, a second edge, a third edge, and a fourth edge, and wherein the LED array includes a first LED and a second LED, the first edge of the first LED is adjacent to the third edge of the second LED; a first trench, disposed between the first LED cell and the second LED; and a first conducting metal, disposed on the first trench, the first edge of the first LED and the third edge of the second LED, and electrically connecting the first LED and the second LED in series; wherein the first LED and/or the second LED includes a round corner in a top view.

Abstract: An optoelectronic element includes an optoelectronic unit, a first metal layer, a second metal layer, a conductive layer and a transparent structure. The optoelectronic unit has a central line in a top view, a top surface, and a bottom surface. The second metal layer is formed on the top surface, and has an extension portion crossing over the central line and extending to the first metal layer. The conductive layer covers the first metal layer and the extension portion. The transparent structure covers the bottom surface without covering the top surface.

Abstract: A sensing apparatus includes a sensing device having a hetero-junction structure, a light coupler connected to the sensing device and a readout device connected to the light coupler.

Abstract: A light-emitting device includes a light-emitting element, a supporting structure, a first wavelength conversion structure, and a light-absorbing layer. The light-emitting element includes a plurality of active stacks separated from each other, a first-type semiconductor layer continuously arranged on the plurality of active stacks, and a plurality of second-type semiconductor layers under the plurality of active stacks. The supporting structure is disposed on the light-emitting element and includes a first opening. The first wavelength conversion structure disposed in the first opening. The light-absorbing layer disposed on the top surface of the supporting structure.

Abstract: An embodiment of present disclosure discloses a light-emitting device which includes a first light-emitting unit, a second light-emitting unit, a first optic structure, a second optic structure, a first light-transmitting structure, a second light-transmitting structure, and a light-blocking structure. The first optic structure covers a top surface and a side surface of the first light-emitting unit, the second optic structure covers a top surface and a side surface of the second light-emitting unit. The first light-transmitting structure covers the first optic structure. The second light-transmitting structure covers the second optic structure. The light-blocking structure surrounds the first light-emitting unit and the second light-emitting unit, and covers the side surfaces of the first optic structure, the second optic structure, the first light-transmitting structure and the second light-transmitting structure.