Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a conductive feature in a first dielectric layer. The semiconductor device structure also includes an etching stop layer over the first dielectric layer and a second dielectric layer over the etching stop layer. The semiconductor device structure further includes a conductive via in the etching stop layer and the second dielectric layer. In addition, the semiconductor device structure includes a conductive line over the conductive via. The semiconductor device structure also includes a first barrier liner covering the bottom surface of the conductive line. The semiconductor device structure further includes a second barrier liner surrounding sidewalls of the conductive line and the conductive via. The conductive line and the conductive via are confined in the first barrier liner and the second barrier liner.

Abstract: A NEMS device structure and a method for forming the same are provided. The NEMS device structure includes a substrate and an interconnect structure formed over the substrate. The NEMS device structure includes a dielectric layer formed over the interconnect structure and a beam structure formed in and over the dielectric layer, wherein the beam structure includes a plurality of strip structures. The NEMS device structure includes a cap structure formed over the dielectric layer and the beam structure and a cavity formed between the beam structure and the cap structure.

Abstract: A vertical MOS transistor includes a substrate, a metal line disposed on the substrate, a semiconductor pillar disposed on and in contact with the metal line, a gate dielectric layer disposed surrounding the semiconductor pillar, a metal gate disposed surrounding a portion of the semiconductor pillar, and a gate electrode disposed in contact with the metal gate. In some embodiments, a width of an end of the gate electrode in contact with the metal gate is narrower than a width of an end of the gate electrode away from the metal gate.

Abstract: A NEMS device structure and a method for forming the same are provided. The NEMS device structure includes a substrate and an interconnect structure formed over the substrate. The NEMS device structure includes a dielectric layer formed over the interconnect structure and a beam structure formed in and over the dielectric layer. The beam structure includes a fixed portion and a moveable portion, the fixed portion is extended vertically, and the movable portion is extended horizontally. The NEMS device structure includes a cap structure formed over the dielectric layer and the beam structure and a cavity formed between the beam structure and the cap structure.

Abstract: A method of forming a semiconductor structure is provided. A conductive layer is formed over a substrate. The conductive layer is selectively etched to form a first conductive portion, a second conductive portion, and a spacing between the first conductive portion and the second conductive portion. A dielectric layer is formed over the first conductive portion, the second conductive portion, and the spacing, such that an air gap is formed in the spacing between the first and second conductive portions and is sealed by the dielectric layer.

Abstract: A method for fabricating a semiconductor device includes forming a dielectric layer over a substrate, forming an etch-stop-layer (ESL) over the dielectric layer, forming a first patterned hard mask (HM) defining a first trench over the ESL, forming a second trench extending through the ESL and the dielectric layer. The second trench is adjacent the first trench. The method also includes filling in the first trench and the second trench with a first material layer, extending the first trench through the ESL and the dielectric layer while the first material layer is filled in the second trench to form an extended first trench, forming a first metal line within the extended first trench, forming a capping layer over the first metal line and removing a portion of the first metal line to form a first cut by using the ESL and the first material layer as an etch mask.

Abstract: A NEMS device structure and a method for forming the same are provided. The NEMS device structure includes a substrate and an interconnect structure formed over the substrate. The NEMS device structure includes a dielectric layer formed over the interconnect structure and a beam structure formed in and over the dielectric layer. The beam structure includes a fixed portion and a moveable portion, the fixed portion is extended vertically, and the movable portion is extended horizontally. The NEMS device structure includes a cap structure formed over the dielectric layer and the beam structure and a cavity formed between the beam structure and the cap structure.

Abstract: A method for fabricating a semiconductor device includes forming a dielectric layer over a substrate, forming an etch-stop-layer (ESL) over the dielectric layer, forming a first patterned hard mask (HM) defining a first trench over the ESL, forming a second trench extending through the ESL and the dielectric layer. The second trench is adjacent the first trench. The method also includes filling in the first trench and the second trench with a first material layer, extending the first trench through the ESL and the dielectric layer while the first material layer is filled in the second trench to form an extended first trench, forming a first metal line within the extended first trench, forming a capping layer over the first metal line and removing a portion of the first metal line to form a first cut by using the ESL and the first material layer as an etch mask.

Abstract: A low-pass filter includes an input portion inputting an electromagnetic signal, an output portion outputting the electromagnetic signal, a high impedance transmission portion electrically connecting the input portion and the output portion to transmit the electromagnetic signal therebetween, and a pair of low impedance transmission members arranged on opposite sides of the high impedance transmission portion. Each of the low impedance transmission members electrically connects the input portion, the output portion, and the high impedance transmission portion, and includes a first low impedance transmission portion and a second low impedance transmission portion. A width of the first low impedance transmission portion is different from that of the second low impedance transmission portion.

Abstract: A low-pass filter (10) includes an input portion (100) inputting an electromagnetic signal, an output portion (120) outputting the electromagnetic signal, a high impedance transmission portion (140) electrically connected to the input portion and the output portion to transmit the electromagnetic signal therebetween, a first low impedance transmission portion (160) electrically connected to the input portion and an end of the high impedance transmission portion, and a second low impedance transmission portion (180) electrically connected to the output portion and another end of the high impedance transmission portion. The two low impedance transmission portions are arranged beside the high impedance transmission portion, and each of the low impedance transmission portions is triangular.

Abstract: A low-pass filter (10) includes an input portion (100) for input of an electromagnetic signal, an output portion (120) for output of the electromagnetic signal, a high impedance transmission portion (140) electrically connecting the input portion and the output portion, a pair of low impedance transmission portions (160, 180) arranged on either side of the high impedance transmission portion, and a capacitor. One of the low impedance transmission portions electrically connects the input portion and one end portion of the high impedance transmission portion. The other low impedance transmission portion electrically connects the output portion and the other end portion of the high impedance transmission portion. One end of the capacitor is electrically connected to the high impedance transmission portion. The high impedance transmission portion is symmetrical about the capacitor.

Abstract: A directional coupler includes two parallel coupled lines and two sector metal plates. The two sector metal plates are connected to a middle portion of each of the two coupled lines. Central angles of the two sector metal plate are less than 90 degrees.

Abstract: A directional coupler includes two parallel coupled lines and two sector metal plates. The two sector metal plates are connected to a middle portion of each of the two coupled lines. Central angles of the two sector metal plate are less than 90 degrees.

Abstract: A low-pass filter (10) includes an input portion (100) for input of an electromagnetic signal, an output portion (120) for output of the electromagnetic signal, a high impedance transmission portion (140) electrically connecting the input portion and the output portion, a pair of low impedance transmission portions (160, 180) arranged on either side of the high impedance transmission portion, and a capacitor. One of the low impedance transmission portions electrically connects the input portion and one end portion of the high impedance transmission portion. The other low impedance transmission portion electrically connects the output portion and the other end portion of the high impedance transmission portion. One end of the capacitor is electrically connected to the high impedance transmission portion. The high impedance transmission portion is symmetrical about the capacitor.

Abstract: A low-pass filter includes an input portion inputting an electromagnetic signal, an output portion outputting the electromagnetic signal, a high impedance transmission portion electrically connecting the input portion and the output portion to transmit the electromagnetic signal therebetween, and a pair of low impedance transmission members arranged on opposite sides of the high impedance transmission portion. Each of the low impedance transmission members electrically connects the input portion, the output portion, and the high impedance transmission portion, and includes a first low impedance transmission portion and a second low impedance transmission portion. A width of the first low impedance transmission portion is different from that of the second low impedance transmission portion.

Abstract: A low-pass filter (10) includes an input portion (100) inputting an electromagnetic signal, an output portion (120) outputting the electromagnetic signal, a high impedance transmission portion (140) electrically connected to the input portion and the output portion to transmit the electromagnetic signal therebetween, a first low impedance transmission portion (160) electrically connected to the input portion and an end of the high impedance transmission portion, and a second low impedance transmission portion (180) electrically connected to the output portion and another end of the high impedance transmission portion. The two low impedance transmission portions are arranged beside the high impedance transmission portion, and each of the low impedance transmission portions is triangular.

Abstract: A low-pass filter (10) is provided. The low-pass filter includes an input part (100), an output part (120), a high impedance part (140), a first low impedance part (160), and a second low impedance part (180). The input part is electronically connected to the high impedance part for input of electromagnetic signals thereinto. The output part is electronically connected to the high impedance part for output of electromagnetic signals therefrom. The input part and the output part are asymmetrical to a resonator defined by the high impedance part, the first low impedance part and the second low impedance part. One end of the high impedance part is electronically connected to the first low impedance part, the other end of that is electronically connected to the second low impedance part. Wherein the high impedance part is disposed partly between the first low impedance part and the second low impedance part.

Abstract: A filter (20) includes an input part (200), an output part (202), a first portion (22), a second portion (24), and a third portion (26). The input part is for receiving electromagnetic signals, and the output part is for transmitting the electromagnetic signals. The first portion with high impedance is electronically connected to the input part and the output part. The second portion with low impedance is electronically connected to two ends of the first portion. The third portion partially surrounds the second portion, and is electro-magnetically coupled to the second portion.

Abstract: A low-pass filter (10) is provided. The low-pass filter includes an input part (100), an output part (120), a high impedance part (140), a first low impedance part (160), and a second low impedance part (180). The input part is electronically connected to the high impedance part for input of electromagnetic signals thereinto. The output part is electronically connected to the high impedance part for output of electromagnetic signals therefrom. The input part and the output part are asymmetrical to a resonator defined by the high impedance part, the first low impedance part and the second low impedance part. One end of the high impedance part is electronically connected to the first low impedance part, the other end of that is electronically connected to the second low impedance part. Wherein the high impedance part is disposed partly between the first low impedance part and the second low impedance part.

Abstract: A low-pass filter (10) includes an input line (100), an output line (120), a high impedance transmission line (140), a first low impedance transmission line (160), a second low impedance transmission line (180), and a stub (190). The high impedance transmission line includes a first connecting portion (142) electronically connected to the input line, and a second connecting portion (144) electronically connected to the output line. The first low impedance transmission line includes a third connecting portion (162) electronically connected to the first connecting portion, and a first free end (164). The second low impedance transmission line includes a fourth connecting portion (182) electronically connected to the second connecting portion, and a second free end (184). The stub includes a fifth connecting portion (192) electronically connected to the first connecting portion and the second connecting portion, and a third free end (194).