Patents by Inventor Hsin-Wei TSENG

Hsin-Wei TSENG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170084818
    Abstract: The present disclosure generally relates to spin-torque-transfer magnetoresistive random access memory (STT-MRAM) memory cells. In the magnetic tunnel junction (MTJ) of the STT-MRAM memory cell, a 1 nm thick barrier layer having a triclinic crystalline structure is doped with B, N, or C. By applying a positive voltage to the MTJ, the magnetic state of the free layer of the MTJ may be switched. By increasing the voltage applied to the MTJ, the MTJ may change to operate as a ReRAM memory cell, and the crystalline structure of the barrier layer may switch to monoclinic. Before reaching the breakdown voltage, a negative voltage may be applied to the MTJ to switch the crystalline structure of the barrier layer back to triclinic. Once the negative voltage is applied and the crystalline structure of the barrier layer is changed back to triclinic, the MTJ may function as a STT-MRAM cell once again.
    Type: Application
    Filed: September 18, 2015
    Publication date: March 23, 2017
    Applicant: HGST Netherlands B.V.
    Inventors: Patrick M. BRAGANCA, Luis CARGNINI, Jordan A. KATINE, Hsin-Wei TSENG
  • Patent number: 9305579
    Abstract: The embodiments of the present invention relate to a method for forming a magnetic read head having side by side sensors. The method includes depositing a pinned layer, a barrier layer and a free layer over a shield, and removing portions of the pinned layer, barrier layer and free layer to expose portions of the shield. A bias material is deposited over the exposed shield. An opening is formed in the free layer to expose the barrier layer, and an insulative material is deposited into the opening. The resulting side by side sensors each has its own free layer separated by the insulative nonmagnetic material. The side by side sensors share the pinned layer.
    Type: Grant
    Filed: January 15, 2014
    Date of Patent: April 5, 2016
    Assignee: HGST NETHERLANDS B.V.
    Inventors: Patrick M. Braganca, Yang Li, Jordan A. Katine, Neil Smith, Hsin-Wei Tseng
  • Patent number: 9218831
    Abstract: A side-by-side magnetic multi-input multi-output (MIMO) read head is provided. The read head may include a pair of side-by-side MIMO read sensors disposed between a bottom shield, a top shield and between a pair of side shields. The read head may also include a pair of electrical leads, each of which is coupled with one of the MIMO read sensors. The electrical leads extend away from an air bearing surface.
    Type: Grant
    Filed: September 17, 2014
    Date of Patent: December 22, 2015
    Assignee: HGST Netherlands B.V.
    Inventors: Patrick Mesquita Braganca, Jordan Asher Katine, Hsin-wei Tseng, Howard Gordon Zolla
  • Publication number: 20150199985
    Abstract: The embodiments of the present invention relate to a method for forming a magnetic read head having side by side sensors. The method includes depositing a pinned layer, a barrier layer and a free layer over a shield, and removing portions of the pinned layer, barrier layer and free layer to expose portions of the shield. A bias material is deposited over the exposed shield. An opening is formed in the free layer to expose the barrier layer, and an insulative material is deposited into the opening. The resulting side by side sensors each has its own free layer separated by the insulative nonmagnetic material. The side by side sensors share the pinned layer.
    Type: Application
    Filed: January 15, 2014
    Publication date: July 16, 2015
    Applicant: HGST NETHERLANDS B.V.
    Inventors: Patrick M. BRAGANCA, Yang LI, Jordan A. KATINE, Neil SMITH, Hsin-Wei TSENG