Patents by Inventor Hsin-Yi Tsai

Hsin-Yi Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20190161430
    Abstract: A series of novel bis(hydroxymethyl) alkanoate derivatives of curcuminoids were designed, and synthesized, which show anticancer activity, and in particular to breast cancer, colon cancer, and prostate cancer.
    Type: Application
    Filed: June 2, 2017
    Publication date: May 30, 2019
    Inventors: SHENG-CHU KUO, KUO-HSIUNG LEE, CHANG-HAI TSAI, MIN-TSANG HSIEH, LING-CHU CHANG, HSIN-YI HUNG, HUI-YI LIN, JAI-SING YANG
  • Publication number: 20190111277
    Abstract: The present invention provides a composite intelligent biological phototherapy device including a base structure, a plurality of white light fluorescent tubes arranged side by side on the base structure, a plurality of LEDs disposed between the white light fluorescent tubes, a housing having an opening and configured to accommodate the base structure and the white light fluorescent tubes and the LEDs thereon, a light-transmittable plate disposed on the housing corresponding to the opening, and an control module configured to respectively control the white light fluorescent tubes and the LEDs. The base structure includes a plurality of sections, and each of the sections has a first surface facing the light-transmittable plate. The white light fluorescent tubes and the LEDs are provided on the first surfaces, and the sections are bent relative to each other so an angle between the first surfaces of adjacent sections is less than 180 degrees.
    Type: Application
    Filed: April 4, 2018
    Publication date: April 18, 2019
    Inventors: YI-CHENG LIN, HSIN-YI TSAI, MIN-WEI HUNG, KUO-CHENG HUANG, HSIN-SU YU, CHIOU-LIAN LAI, CHUNG-YAO HSU, CHAO-HUNG CHENG, LI-WEI KUO, HUNG-CHE CHIANG, CHIH-YI YANG
  • Patent number: 10180374
    Abstract: A test device for testing a first contact lens classified as a specific type of contact lens is disclosed. The test device includes a light emitting unit and a detection unit. The light emitting unit emits a first incident light to the first contact lens to generate a first reflected light having a first light intensity, and the detection unit receives the first reflected light, in response to the first light intensity generates a first light intensity value, and implements a specific water content algorithm based on the first light intensity value to estimate an actual water content associated with the first contact lens, wherein the specific water content algorithm is constructed based on a water content reference data associated with the specific type of contact lens and a corresponding light intensity measurement data associated with the water content reference data.
    Type: Grant
    Filed: November 30, 2017
    Date of Patent: January 15, 2019
    Assignee: NATIONAL APPLIED RESEARCH LABORATORIES
    Inventors: Yu-Hsuan Lin, Hsin-Yi Tsai, Kuo-Cheng Huang, Min-Wei Hung
  • Patent number: 10163688
    Abstract: Among other things, one or more interconnect structures and techniques for forming such interconnect structures within integrated circuits are provided. An interconnect structure comprises one or more kinked structures, such as metal structures or via structures, formed according to a kinked profile. For example, the interconnect structure comprises a first kinked structure having a first tapered portion and a second kinked structure having a second tapered portion. The first tapered portion and the second tapered portion are both situated at an interface between two layers. Current leakage at the interface is mitigated because a length of the interface corresponds to a distance between the first tapered portion and the second tapered portion that is relatively larger than if the first kinked structure and the second kinked structure were merely formed according to a non-tapered shape.
    Type: Grant
    Filed: April 3, 2013
    Date of Patent: December 25, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Chih-Hao Chen, Chung-Chi Ko, Hsin-Yi Tsai
  • Patent number: 10086559
    Abstract: A system for online monitoring powder-based 3D printing processes and method thereof are disclosed. A uniform light source having a single wavelength provided by the system is irradiated onto the powder layer before and after applied with glue. Intensities of such reflected images are obtained and subtracted from each other in an image process procedure. A difference obtained through the subtraction is compared with an original 3D model in a computer. If any defect is found such as being larger than a threshold value, the powder-based 3D printing processes will be terminated. Therefore, the technical effects of online printing processes monitoring, time saving and printing resources saving will be achieved.
    Type: Grant
    Filed: July 20, 2015
    Date of Patent: October 2, 2018
    Assignee: NATIONAL APPLIED RESEARCH LABORATORIES
    Inventors: Hsin-Yi Tsai, Min-Wei Hung, Kuo-Cheng Huang, Keng-Liang Ou, Ching-Ching Yang
  • Patent number: 10049983
    Abstract: A system and method for a semiconductor device are provided. An embodiment comprises a dielectric layer, a hard mask layer over the dielectric layer, and a capping layer over the hard mask layer. A multi-patterning process is performed to form an interconnect using the capping layer as a mask to form an opening for the interconnect.
    Type: Grant
    Filed: January 4, 2016
    Date of Patent: August 14, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Cha-Hsin Chao, Chih-Hao Chen, Hsin-Yi Tsai
  • Publication number: 20180226235
    Abstract: A method includes forming a coating layer in a dry etching chamber, placing a wafer into the dry etching chamber, etching a metal-containing layer of the wafer, and moving the wafer out of the dry etching chamber. After the wafer is moved out of the dry etching chamber, the coating layer is removed.
    Type: Application
    Filed: April 2, 2018
    Publication date: August 9, 2018
    Inventors: Yu Chao Lin, Yuan-Ming Chiu, Ming-Ching Chang, Hsin-Yi Tsai, Chao-Cheng Chen
  • Patent number: 9934945
    Abstract: A method includes forming a coating layer in a dry etching chamber, placing a wafer into the dry etching chamber, etching a metal-containing layer of the wafer, and moving the wafer out of the dry etching chamber. After the wafer is moved out of the dry etching chamber, the coating layer is removed.
    Type: Grant
    Filed: May 25, 2016
    Date of Patent: April 3, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu Chao Lin, Yuan-Ming Chiu, Ming-Ching Chang, Hsin-Yi Tsai, Chao-Cheng Chen
  • Publication number: 20180085035
    Abstract: The present invention provides a detecting apparatus based on image for detecting blood glucose concentration and method thereof. The detecting apparatus comprising a lighting device, an image capture device, a thermal imager and an operating device. The lighting device including a first wavelength of light source and a second wavelength of light source, configured to illuminate skin. The image capture device disposed above the lighting device, configured to capture a first image and a second image corresponding to the first wavelength of light source and the second wavelength of light source illuminated on the skin respectively. The thermal imager is configured to detect temperature of the skin. The operating device is connected to the lighting device, the image capture device and the thermal imager, configured to calculate blood glucose concentration according to the first image, the second image and the temperature.
    Type: Application
    Filed: June 26, 2017
    Publication date: March 29, 2018
    Inventors: HSIN-YI TSAI, KUO-CHENG HUANG, CHING-CHING YANG, TZU-TING WEI
  • Patent number: 9566025
    Abstract: The present invention is an image based oxygen saturation measuring device and method thereof. The method comprises steps of providing a plurality of red lights and a plurality of infrared lights arranged uniformly in an interlocked fashion and turned on alternatively; controlling the plurality of red lights and infrared lights to irradiate onto a selected skin area of a testee to have a red light turn-on period and an infrared light turn-on period; receiving a reflected version of the plurality of red lights and infrared lights from the selected skin area, respectively; and analyzing one reflected red light and one infrared light to acquire an oxygen saturation index for each of the coordination points. By means of the present invention, the measurement of oxygen saturation may be much exempted from effects brought from exterior interference and poor blood circulation, and may achieve a large measurement area in a single time.
    Type: Grant
    Filed: May 5, 2014
    Date of Patent: February 14, 2017
    Assignee: NATIONAL APPLIED RESEARCH LABORATORIES
    Inventors: Hsin-Yi Tsai, Kuo-Cheng Huang, Yi-Ju Chen, Han-Chao Chang
  • Patent number: 9496217
    Abstract: The present disclosure provides a semiconductor device that includes, a substrate; a first conductive line located over the substrate and extending along a first axis, the first conductive line having a first length and a first width, the first length being measured along the first axis; a second conductive line located over the first conductive line and extending along a second axis different from the first axis, the second conductive line having a second length and a second width, the second length being measured along the second axis; and a via coupling the first and second conductive lines, the via having an upper surface that contacts the second conductive line and a lower surface that contacts the first conductive line. The via has an approximately straight edge at the upper surface, the straight edge extending along the second axis and being substantially aligned with the second conductive line.
    Type: Grant
    Filed: June 4, 2009
    Date of Patent: November 15, 2016
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Hsin-Yi Tsai, Chih-Hao Chen, Ming-Chung Liang, Chii-Ping Chen, Lai Chien Wen, Yuh-Jier Mii
  • Publication number: 20160268106
    Abstract: A method includes forming a coating layer in a dry etching chamber, placing a wafer into the dry etching chamber, etching a metal-containing layer of the wafer, and moving the wafer out of the dry etching chamber. After the wafer is moved out of the dry etching chamber, the coating layer is removed.
    Type: Application
    Filed: May 25, 2016
    Publication date: September 15, 2016
    Inventors: Yu Chao Lin, Yuan-Ming Chiu, Ming-Ching Chang, Hsin-Yi Tsai, Chao-Cheng Chen
  • Patent number: 9431221
    Abstract: A plasma-processing apparatus is provided. The plasma-processing apparatus includes a processing chamber having an upper portion and a lower portion. The upper portion has a gas inlet. The plasma-processing apparatus includes an upper electrode plate disposed in the upper portion. The upper electrode plate has gas holes passing through the upper electrode plate. The plasma-processing apparatus includes a protective layer disposed over inner walls of the gas holes. The protective layer and the upper electrode plate have different materials. The plasma-processing apparatus includes a lower electrode pedestal disposed in the lower portion for supporting a substrate.
    Type: Grant
    Filed: July 8, 2014
    Date of Patent: August 30, 2016
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Po-Ju Chen, Chih-Ching Cheng, Hsin-Yi Tsai, Xiao-Meng Chen
  • Patent number: 9391072
    Abstract: A semiconductor device includes a silicon-based substrate, a gate structure and a laminated sacrificial oxide layer. The gate structure is on the silicon-based substrate. The laminated sacrificial oxide layer has a first portion on the silicon-based substrate and a second portion conformal to the gate structure, in which a first thickness of the first portion is substantially the same as a second thickness of the second portion. The laminated sacrificial oxide layer includes a native oxide layer and a silicon oxy-nitride layer. The native oxide layer is on the silicon-based substrate and conformal to the gate structure. The silicon oxy-nitride layer is conformal to the native oxide layer.
    Type: Grant
    Filed: August 3, 2015
    Date of Patent: July 12, 2016
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yi-Wei Chiu, Hsin-Yi Tsai, Tzu-Chan Weng, Li-Te Hsu
  • Publication number: 20160176114
    Abstract: A system for online monitoring powder-based 3D printing processes and method thereof are disclosed. A uniform light source having a single wavelength provided by the system is irradiated onto the powder layer before and after applied with glue. Intensities of such reflected images are obtained and subtracted from each other in an image process procedure. A difference obtained through the subtraction is compared with an original 3D model in a computer. If any defect is found such as being larger than a threshold value, the powder-based 3D printing processes will be terminated. Therefore, the technical effects of online printing processes monitoring, time saving and printing resources saving will be achieved.
    Type: Application
    Filed: July 20, 2015
    Publication date: June 23, 2016
    Inventors: Hsin-Yi TSAI, Min-Wei HUNG, Kuo-Cheng HUANG, Keng-Liang OU, Ching-Ching YANG
  • Patent number: 9355823
    Abstract: A method includes forming a coating layer in a dry etching chamber, placing a wafer into the dry etching chamber, etching a metal-containing layer of the wafer, and moving the wafer out of the dry etching chamber. After the wafer is moved out of the dry etching chamber, the coating layer is removed.
    Type: Grant
    Filed: May 9, 2014
    Date of Patent: May 31, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Yu Chao Lin, Yuan-Min Chiu, Ming-Ching Chang, Hsin-Yi Tsai, Chao-Cheng Chen
  • Publication number: 20160118347
    Abstract: A system and method for a semiconductor device are provided. An embodiment comprises a dielectric layer, a hard mask layer over the dielectric layer, and a capping layer over the hard mask layer. A multi-patterning process is performed to form an interconnect using the capping layer as a mask to form an opening for the interconnect.
    Type: Application
    Filed: January 4, 2016
    Publication date: April 28, 2016
    Inventors: Cha-Hsin Chao, Chih-Hao Chen, Hsin-Yi Tsai
  • Patent number: 9269857
    Abstract: Disclosed are a method and system for eliminating yellow ring phenomenon occurring on the white light emitting diode (LED) based on a blue light chip exciting yellow phosphor powders and having a packaging surface enclosing thereon. Lightspot images are repeatedly acquired outside the white LED, and then each analyzed to see if the yellow ring still exists on a lightspot. If yes, a further atomization process is performed on the packaging surface of white LED, until the acquired and analyzed image shows no yellow ring exists. A lightspot-by-lightspot basis is used in the yellow ring elimination task. In the image analysis, a look up table may be provided in advanced or established at the same time simultaneously with the yellow ring elimination task. The atomization performed on the lightspot may also consider a width issue.
    Type: Grant
    Filed: October 22, 2013
    Date of Patent: February 23, 2016
    Assignee: NATIONAL APPLIED RESEARCH LABORATORIES
    Inventors: Ching-Ching Yang, Hsin-Yi Tsai, Yi-Ju Chen, Kuo-Cheng Huang
  • Publication number: 20160013081
    Abstract: A plasma-processing apparatus is provided. The plasma-processing apparatus includes a processing chamber having an upper portion and a lower portion. The upper portion has a gas inlet. The plasma-processing apparatus includes an upper electrode plate disposed in the upper portion. The upper electrode plate has gas holes passing through the upper electrode plate. The plasma-processing apparatus includes a protective layer disposed over inner walls of the gas holes. The protective layer and the upper electrode plate have different materials. The plasma-processing apparatus includes a lower electrode pedestal disposed in the lower portion for supporting a substrate.
    Type: Application
    Filed: July 8, 2014
    Publication date: January 14, 2016
    Inventors: Po-Ju CHEN, Chih-Ching CHENG, Hsin-Yi TSAI, Xiao-Meng CHEN
  • Patent number: 9230854
    Abstract: A system and method for a semiconductor device are provided. An embodiment comprises a dielectric layer, a hard mask layer over the dielectric layer, and a capping layer over the hard mask layer. A multi-patterning process is performed to form an interconnect using the capping layer as a mask to form an opening for the interconnect.
    Type: Grant
    Filed: August 9, 2013
    Date of Patent: January 5, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Cha-Hsin Chao, Chih-Hao Chen, Hsin-Yi Tsai