Abstract: A method for manufacturing an implantable micro-biosensor includes the steps of: a) providing a substrate, b) forming on a first surface of the substrate a first working electrode which at least includes a first sensing section including a first conductive material, c) forming on the first surface of the substrate at least one second working electrode which at least includes a second sensing section disposed proximate to at least one side of the first sensing section, and d) forming a chemical reagent layer which at least covers the first conductive material of the first sensing section and which reacts with the analyte to produce a product.

Abstract: An immersion cooling system is provided. The immersion cooling system includes a box, an upper cover, plural fixing components, plural latches and a link module. The box has an opening upwardly. The upper cover covers the opening. The fixing components are disposed on the box and arranged adjacent to the outer perimeter of the opening. The latches corresponding to the fixing components are disposed on the upper cover. The link module includes plural crossbars corresponding to the latches. The link module moves downwardly close to the upper cover, scroll-wheels of the latches roll along limiting surfaces of corresponding fixing components and press against the upper cover, the upper cover closes the opening to form an airtight space. The link module moves upwardly away from the upper cover, the scroll-wheels are separated away from the limiting surfaces of corresponding fixing components, allows the upper cover to separate from the opening.

Abstract: An optoelectronic device includes a semiconductor stack, including a first semiconductor layer, an active layer, and a second semiconductor layer; a contact electrode formed on the second semiconductor layer; an insulating reflective structure covering the contact electrode and including a plurality of insulating reflective structure openings to expose the contact electrode; a metal reflective structure covering the plurality of insulating reflective structure openings to electrically connect to the contact electrode; and an insulating structure including one or more first insulating structure openings to expose the first semiconductor layer and one or more second insulating structure openings to expose the metal reflective structure.

Abstract: An improved switching power converting apparatus (10) includes a power converting circuit (102), a sampling circuit (104), a signal gain adjustment circuit (106), a frequency limiting circuit (108) and a pulse width modulation controller (110). The sampling circuit (104) is configured to detect the power converting circuit (102) to obtain a sampled signal (Vs) and transmit the sampled signal (Vs) to the signal gain adjustment circuit (106). The signal gain adjustment circuit (106) is configured to adjust the sampled signal (Vs) to obtain a control signal (Vcon) and transmit the control signal (Vcon) to the frequency limiting circuit (108). The pulse width modulation controller (110) is configured to control an operating frequency of the pulse width modulation controller (110) based on the control signal (Vcon).

Abstract: A light-emitting device includes a first semiconductor layer; an active layer on the first semiconductor layer and having an upmost surface with a first width; and a second semiconductor layer on the active layer and having a bottommost surface with a second width less than the active layer.

Abstract: A compact optical imaging device with shortened focal length, for use in an imaging module and an electronic device, comprises first to fifth lenses. An image-side surface of the first lens is concave near an optical axis. An image-side surface of the third lens is concave near the optical axis. The second and fourth lenses have a negative refractive power. The third and fifth lenses have a positive refractive power. The optical imaging device satisfies formulas: 95°/mm<FOV/TL5<105°/mm and 1 mm?1<FNO/TL4<1.5 mm?1, FOV being a maximum field of view of the optical imaging device, TL5 being a distance from an object-side surface of the fifth lens to an image plane of the optical imaging device along the optical axis, FNO being a F-number of the optical imaging device, and TL4 being a distance from an object-side surface of the fourth lens to the image plane along the optical axis.

Abstract: A semiconductor light-emitting device includes: a semiconductor stack, including; an active layer, formed on the semiconductor stack; a second semiconductor contact layer formed on the active layer; and a recessed region formed in the semiconductor stack and including a part of the upper surface; a transparent electrode on the second semiconductor contact layer; a protective layer on semiconductor stack, including a first and second opening; a first electrode pad in the first opening and connected with the first semiconductor contact layer; and a second electrode pad in the second opening and connected to the transparent electrode. The semiconductor light-emitting device receives an operating current having ratio to the area of the transparent electrode that ranges from 10 mA/mm2 to 1000 mA/mm2. In a top view, the active layer surrounds the recessed region. The semiconductor stack and the transparent electrode layer each includes an edge adjacent to the recessed region.

Abstract: A surge protecting circuit is provided. A first stage filter circuit is connected to an alternating current (AC) source. A surge detection driver circuit is connected to a first stage filter circuit. A first snubber circuit is connected to the AC source. A first terminal of a first power switch is connected to the first snubber circuit. A control terminal of the first power switch is connected to the surge detection driver circuit. A first terminal of a second power switch is connected to a second snubber circuit. A second terminal of the second power switch is connected to an output terminal of the surge protecting circuit. A control terminal of the second power switch is connected to the surge detection driver circuit. A multi-stage filter circuit is connected to a second terminal of the first power switch and the second snubber circuit.

Abstract: A light-emitting device comprises a substrate; a first light-emitting unit and a second light-emitting unit formed on the substrate, each of the first light-emitting unit and the second light-emitting unit comprises a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first light-emitting unit comprises a first semiconductor mesa and a first surrounding part surrounding the first semiconductor mesa, and the second light-emitting unit comprises a second semiconductor mesa and a second surrounding part surrounding the second semiconductor mesa; a trench formed between the first light-emitting unit and the second light-emitting unit and exposing the substrate; a first insulating layer comprising a first opening on the first surrounding part and a second opening on the second semiconductor layer of the second light-emitting unit; and a connecting electrode comprising a first connecting part on the first

Abstract: An anti-theft sensor and an alarm system thereof are provided. The alarm system includes a plurality of anti-theft sensors and an alarm device, and the plurality of anti-theft sensors are electrically connected to bolts of a vehicle frame of a vehicle to form an electrical loop/circuit, so that the plurality of anti-theft sensors must be removed when the vehicle frame is moved. In this way, when the plurality of anti-theft sensors are removed, the plurality of anti-theft sensors are triggered to send a warning signal to the alarm device, so that the alarm device sends out an alarm. Therefore, the vehicle owner can be immediately and correctly reminded that the condition of the vehicle frame of the vehicle is abnormal without false alarms.

Abstract: A light-emitting device includes: a semiconductor stack, including a first semiconductor layer, a second semiconductor layer and an active area between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer includes an upper surface; a plurality of exposed regions, formed in the semiconductor stack and exposing the upper surface; a lower protective layer, covering the exposed regions and the second semiconductor layer; a first reflective structure, formed on the second semiconductor layer and including a plurality of first openings on the second semiconductor layer; a second reflective structure, formed on the first reflective structure and electrically connected to the second semiconductor layer through the plurality of first openings; and an upper protective layer, formed on the second reflective structure; wherein the upper protective layer contacts and overlaps the lower protective layer on the exposed regions; wherein the first reflective structure and the

Abstract: A transistor includes a field effect transistor, a surface modification layer, and a cell detection layer. The field effect transistor includes a source region, a drain region, a channel region, a gate dielectric layer, and a gate. The drain region is spaced apart from the source region in a first direction. The channel extends in the first direction and is disposed between the source region and the drain region. The gate dielectric layer is disposed below the channel region. The gate is disposed below the gate dielectric layer. The surface modification layer is disposed on the channel region. The cell detection layer is disposed on the surface modification layer and includes a plurality of antibodies, wherein the antibodies are configured to identify cell surface antigens, and the cell detection layer is configured to capture cells identified by the antibodies.

Abstract: An immersion cooling system includes a cooling tank, a housing and a valve. The coolant tank is configured to accommodate a liquid coolant and an electronic device immersed in the liquid coolant. The housing covers a side of the cooling tank and thereby forms an enclosure. The valve has two ports, one of which communicates with the enclosure and the other communicates with a part of the cooling tank above the liquid coolant. The valve is configured to open in response to a gas pressure inside the cooling tank exceeding an upper limit.

Abstract: The invention provides an English word image recognition method, mainly loading a to-be-recognized image and performing a one-dimensional convolutional neural network operation and a fully connected operation processing to generate a feature map, outputting the feature map by a bidirectional long short-term memory (LSTM) network and performing a fully connected operation to generate a feature map, then performing a probability recognition and outputting a probabilistic string, and then recognizing the probabilistic string and outputting a word recognition result to solve the problem of producing a large amount of operation in the conventional two-dimensional recognition operation, thereby achieving efficacies of reducing costs of recognition equipment and enabling fast and accurate recognition.

Abstract: The invention provides an English char image recognition method mainly generating a rectangular coordinate frame from a loaded English character image, finding a gravity center in the rectangular coordinate frame, obtaining feature points on the rectangular coordinate frame and around the gravity center, performing one-dimensional convolutional operation and processing on the feature points to generate six layer feature maps, and generating a character recognition result from the six layer feature maps to solve the problem of generating a large amount of computation in conventional two-dimensional recognition operation, thereby achieving an efficacy of reducing recognition equipment costs and enabling fast and accurate recognition.

Abstract: A light-emitting device includes a substrate including a top surface, a first side surface and a second side surface, wherein the first side surface and the second side surface of the substrate are respectively connected to two opposite sides of the top surface of the substrate; a semiconductor stack formed on the top surface of the substrate, the semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer formed between the first semiconductor layer and the second semiconductor layer; a first electrode pad formed adjacent to a first edge of the light-emitting device; and a second electrode pad formed adjacent to a second edge of the light-emitting device, wherein in a top view of the light-emitting device, the first edge and the second edge are formed on different sides or opposite sides of the light-emitting device, the first semiconductor layer adjacent to the first edge includes a first sidewall directly connected to the first side surface of the substrate,

Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer and an active area between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer including an upper surface; an exposed region formed in the semiconductor stack to expose the upper surface; a first protective layer covering the exposed region and a portion of the second semiconductor layer, wherein the first protective layer includes a first part with a first thickness formed on the upper surface and a second part with a second thickness formed on the second semiconductor layer, the first thickness is smaller than the second thickness; a first reflective structure formed on the second semiconductor layer and including one or multiple openings; and a second reflective structure formed on the first reflective structure and electrically connected to the second semiconductor layer through the one or multiple openings.

Abstract: An HEMT includes an aluminum gallium nitride layer. A gallium nitride layer is disposed below the aluminum gallium nitride layer. A zinc oxide layer is disposed under the gallium nitride layer. A source electrode and a drain electrode are disposed on the aluminum gallium nitride layer. A gate electrode is disposed on the aluminum gallium nitride layer and between the drain electrode and the source electrode.

Abstract: A health management supply organizer is disclosed. The health management supply organizer includes a closeable body adapted to receive a plurality of health monitoring supplies. The plurality of health monitor supplies include at least a transmitter container for receiving a transmitter, a charger for the transmitter and a splitter for splitting a used sensor module and the transmitter. The closeable body includes a first leaf, a second leaf and an end portion connecting the first leaf and the second leaf, wherein the first leaf and the second leaf are foldable about the end portion. The first leaf has a plurality of compartments adapted to receive the plurality of health monitoring supplies respectively.