Abstract: A high electron mobility transistor (HEMT) includes a substrate, a P-type III-V composition layer, a gate electrode and a carbon containing layer. The P-type III-V composition layer is disposed on the substrate, and the gate electrode is disposed on the P-type III-V composition layer. The carbon containing layer is disposed under the P-type III-V composition layer to function like an out diffusion barrier for preventing from the dopant within the P-type III-V composition layer diffusing into the stacked layers underneath during the annealing process.

Abstract: A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the second semiconductor layer includes a first edge; a reflective structure located on the second semiconductor layer and including an outer edge; a first electrode pad located on the reflective structure, wherein the first electrode pad including an outer side wall adjacent to the outer edge, wherein the outer edge extends beyond the outer side wall and does not exceed the first edge in a cross-sectional view of the light-emitting device.

Abstract: A light-emitting device comprises a substrate comprising a top surface and a sidewall; a semiconductor stack formed on the top surface of the substrate comprising a first semiconductor layer, an active layer and a second semiconductor layer; a dicing street surrounding the semiconductor stack and exposing the top surface of the substrate; a protective layer covering the semiconductor stack and the dicing street; a reflective layer comprising a Distributed Bragg Reflector structure and covering the protective layer; and a cap layer covering the reflective layer, wherein the reflective layer comprises an uneven portion adjacent to the sidewall of the substrate, and the uneven portion comprises an uneven thickness.

Abstract: Some implementations described herein provide techniques and apparatuses for determining a performance of a dry-clean operation within a deposition tool. A cleaning-control subsystem of the deposition tool may include a gas concentration sensor and a temperature sensor mounted in an exhaust system of the deposition tool to monitor the dry-clean operation. The gas concentration sensor may provide data related to a concentration of a chemical compound in a cleaning gas, where the chemical compound is a bi-product of the dry-clean operation. The temperature sensor may provide temperature data related to an exothermic reaction of the dry-clean operation. Such data may be used to determine an efficiency and/or an effectiveness of the dry-clean operation within the deposition tool.

Abstract: A light-emitting device includes: a semiconductor stack, including a first semiconductor layer and a plurality of mesas spaced apart from each other on the first semiconductor layer, wherein the plurality of mesas each includes a second semiconductor layer, the first semiconductor layer and the second semiconductor layer have different conductivity types; a contact metal formed on the semiconductor stack, including a plurality of first contact parts located between the mesas and electrically connected to the first semiconductor layer, and a plurality of second contact parts located on the mesas and electrically connected to the second semiconductor layer; a first insulating structure formed on the contact metal, including a plurality of first openings corresponding to the first contact parts and a plurality of second openings corresponding to the second contact parts; a current spreading electrode formed on the first insulating structure, including a first current spreader and a plurality of second current sp

Abstract: An insertion needle structure includes a needle sharp and a needle body. The needle body is integrally connected to the needle sharp and has a receiving space for receiving the biosensor. The needle body includes a base wall, two side walls, two slope sections and two curved connecting sections. The side walls are located at two sides of the base wall, respectively, the side walls are at least partially nonparallel, and each of the side walls is at least partially flat. Each of the slope sections is connected between each of the side walls and the needle sharp, and each of the slope sections is curved. Each of the curved connecting sections is connected between each of the side walls and the base wall and between each of the slope sections and the base wall. The needle sharp extends from the base wall and the curved connecting sections.

Abstract: The present invention relates to compositions and methods for selectively etching silicon nitride in the presence of silicon oxide, polysilicon and/or metal silicides at a high etch rate and with high selectivity. Additives are described that can be used at various dissolved silica loading windows to provide and maintain the high selective etch rate and selectivity.

Abstract: A semiconductor device includes a semiconductor stack; a substrate formed on the semiconductor stack, including a lower surface connected to the semiconductor stack, an upper surface opposite to the lower surface, and a side surface between the lower surface and the upper surface, wherein the side surface includes a mirror area, a first scribing area, and a first crack area, the mirror area is closer to the lower surface than the first scribing area to the lower surface, and the first scribing area is located between the mirror area and the first crack area; an optical structure on the upper surface of the substrate; and a reflective structure on a side surface of the first scribing area and the first crack area, wherein the first scribing area is arranged below the upper surface of the substrate with a distance less than or equal to ¼ of a thickness of the substrate.

Abstract: Solutions for selective removal of polymer chains from layers of block copolymers and related methods are provided. A layer of a block copolymer comprises a plurality of polymer domains, each of the polymer domains comprise a first region and a second region. The first region comprises first polymer chains. The second region comprises second polymer chains. The solution is configured to remove a greater proportion of the second polymer chains than the first polymer chains, sufficient to increase or rectify at least one dimension of the plurality of polymer domains.

Abstract: The present disclosure provides a structure and a method to reduce electro-migration. An interconnect structure according to the present disclosure includes a conductive feature embedded in a dielectric layer, a capping barrier layer disposed over the conductive feature and the dielectric layer, and an adhesion layer sandwiched between the capping barrier layer and the dielectric layer. The adhesion layer includes a degree of crystallinity between about 40% and about 70%.

Abstract: The present invention provides a measuring method for prolonging a usage lifetime of a biosensor to measure a physiological signal representative of a physiological parameter associated with an analyte in a biofluid. The biosensor includes two working electrodes at least partially covered by a chemical reagent and two counter electrodes having silver and a silver halide, and each silver halide has an initial amount.

Abstract: An implant device for a biosensor comprises a housing unit, an implant module, a bottom seat and a sensor component. The implant module is disposed in an accommodating space of the housing unit. The implant module includes a main body unit, a guiding set, an implant seat, a first elastic member, a needle withdrawal seat, a second elastic member, and a needle implant member. When the housing unit is pressed downwardly, the implant seat is displaced downwardly to perform automatic needle implantation by virtue of an resilient force of the first elastic member; when the needle implantation is completed, a limiting relationship of the implant seat and the needle withdrawal seat is released, so the needle withdrawal seat completes automatic needle withdrawal by releasing a resilient force of the second elastic member.

Abstract: Some implementations described herein provide techniques and apparatuses for determining a performance of a dry-clean operation within a deposition tool. A cleaning-control subsystem of the deposition tool may include a gas concentration sensor and a temperature sensor mounted in an exhaust system of the deposition tool to monitor the dry-clean operation. The gas concentration sensor may provide data related to a concentration of a chemical compound in a cleaning gas, where the chemical compound is a bi-product of the dry-clean operation. The temperature sensor may provide temperature data related to an exothermic reaction of the dry-clean operation. Such data may be used to determine an efficiency and/or an effectiveness of the dry-clean operation within the deposition tool.

Abstract: A charging device for a physiological signal transmitter used to receive a physiological signal from the subcutaneous tissue of a living body and having a first electrical connecting port is disclosed. The charging device includes a transmitter placing seat and a charging module. The transmitter placing seat includes a bearing surface for placing the physiological signal transmitter and an opening configured to align with the first electrical connection port of the physiological signal transmitter. The charging module includes a second electrical connecting port, a third electrical connecting port, a circuit assembly and a control module. The second electrical connecting port is disposed in the opening, and driven to move between a first position and a second position. The third electrical connecting port connects to a power source.

Abstract: A light-emitting device includes a semiconductor structure including a first semiconductor layer, a second semiconductor layer on the first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the second semiconductor layer includes a first edge; a reflective structure located on the second semiconductor layer and including an outer edge; a first electrode pad located on the reflective structure, wherein the first electrode pad including an outer side wall adjacent to the outer edge, wherein the outer edge extends beyond the outer side wall and does not exceed the first edge in a cross-sectional view of the light-emitting device.

Abstract: An anti-theft sensor and an alarm system thereof are provided. The alarm system includes a plurality of anti-theft sensors and an alarm device, and the plurality of anti-theft sensors are electrically connected to bolts of a vehicle frame of a vehicle to form an electrical loop/circuit, so that the plurality of anti-theft sensors must be removed when the vehicle frame is moved. In this way, when the plurality of anti-theft sensors are removed, the plurality of anti-theft sensors are triggered to send a warning signal to the alarm device, so that the alarm device sends out an alarm. Therefore, the vehicle owner can be immediately and correctly reminded that the condition of the vehicle frame of the vehicle is abnormal without false alarms.

Abstract: A light-emitting device comprises a substrate comprising a sidewall, a first top surface, and a second top surface, wherein the second top surface is closer to the sidewall of the substrate than the first top surface to the sidewall of the substrate; a semiconductor stack formed on the substrate comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a dicing street surrounding the semiconductor stack, and exposing the first top surface and the second top surface of the substrate; a protective layer covering the semiconductor stack; a reflective layer comprising a Distributed Bragg Reflector structure covering the protective layer; and a cap layer covering the reflective layer, wherein the second top surface of the substrate is not covered by the protective layer, the reflective layer, and the cap layer.

Abstract: An improved switching power converting apparatus (10) includes a power converting circuit (102), a sampling circuit (104), a signal gain adjustment circuit (106), a frequency limiting circuit (108) and a pulse width modulation controller (110). The sampling circuit (104) is configured to detect the power converting circuit (102) to obtain a sampled signal (Vs) and transmit the sampled signal (Vs) to the signal gain adjustment circuit (106). The signal gain adjustment circuit (106) is configured to adjust the sampled signal (Vs) to obtain a control signal (Vcon) and transmit the control signal (Vcon) to the frequency limiting circuit (108). The pulse width modulation controller (110) is configured to control an operating frequency of the pulse width modulation controller (110) based on the control signal (Vcon).

Abstract: A light-emitting element includes a semiconductor light-emitting stack including a first semiconductor layer, a second semiconductor layer formed on the first semiconductor layer, and an active layer formed therebetween; a first conductive layer disposed on the second semiconductor layer and electrically connecting the second semiconductor layer; a second conductive layer disposed on the second semiconductor layer and electrically connecting the first semiconductor layer; and a cushion part disposed on and directly contacts the first conductive layer, wherein in a top view, the cushion part is surrounded by and electrically isolated from the second conductive layer.