Abstract: Example implementations relate to liquid crystal display (LCD) lighting modes. An example device can include an LCD, a wide gamut light-emitting diode (LED) light set to backlight the LCD, a narrow gamut LED light set to backlight the LCD and a controller communicatively coupled to the LCD. The controller can switch the LCD between a wide gamut lighting mode, a narrow gamut lighting mode, and a high brightness lighting mode in response to changes in ambient light and content displayed on the LCD.

Abstract: A dual emission type display panel has a front viewing surface and a rear viewing surface. The dual emission type display panel includes a substrate, first, second, and third top emission pixel units, and first, second, and third bottom emission pixel units. The substrate has first and second unit regions. The first, second, and third top emission pixel units, and the first, second, and third bottom emission pixel units are located on the substrate. A first top emission pixel unit, a first bottom emission pixel unit, a second top emission pixel unit, and a second bottom emission pixel unit are located in each first unit region. A third top emission pixel unit, a third bottom emission pixel unit, a second top emission pixel unit, and a second bottom emission pixel unit are located in each second unit region.

Abstract: A pixel circuit includes first to third switches, a transistor, a light emitting diode, and first and second capacitors. The first switch has its control end coupled to a first scan line and its first end for receiving a data signal. The second switch has its control end coupled to a second scan line and its third end for receiving a power supply voltage. The transistor has its control end coupled to the second end and its fifth end coupled to the fourth end. The third switch has its control end coupled to a third scan line and its eighth end coupled to the sixth end. the light emitting diode has its anode and cathode coupled to the eighth end and a reference voltage level, respectively. The first and second capacitors are coupled between the second end and seventh end and between the seventh end and reference voltage level, respectively.

Abstract: A mirror electroluminescent display panel includes an array substrate, a plurality of driving devices, a plurality of electroluminescent devices, and a cover substrate. The driving devices and the electroluminescent devices are disposed on the array substrate. Each electroluminescent device includes a first electrode electrically connected to the corresponding driving device, a light-emitting layer disposed on the first electrode, and a second electrode disposed on the light-emitting layer. The cover substrate and the array substrate are disposed oppositely. The cover substrate has a plurality of transmission regions, and a reflection region disposed between adjacent transmission regions, and each of the transmission regions is corresponding to each of the light-emitting layers, respectively.

Abstract: An active device and a fabricating method thereof are provided. The active device includes a buffer layer, a channel, a gate, a gate insulation layer, a source and a drain. The buffer layer is disposed on a substrate and has a positioning region. A thickness of a portion of the buffer layer in the positioning region is greater than a thickness of a portion of the buffer layer outside the positioning region. The channel is disposed on the buffer layer and in the positioning region. The gate is disposed above the channel. The gate insulation layer is disposed between the channel and the gate. The source and the drain are disposed above the channel and electrically connected to the channel.

Abstract: The present disclosure relates to methods and systems for synthesis of bridged-hydropentacene, hydroanthracene and hydrotetracene from the precursor compounds pentacene derivatives, tetracene derivatives, and anthracene derivatives. The invention further relates to methods and systems for forming thin films for use in electrically conductive assemblies, such as semiconductors or photovoltaic devices.

Abstract: A pixel structure of an organic light emitting diode display includes a first transistor and a second transistor. The first transistor includes a first drain electrode and a first source electrode. When a voltage difference is provided between the first drain electrode and the first source electrode, the first transistor has a first subthreshold slope (SS). The second transistor includes a second drain electrode and a second source electrode. When the voltage difference is provided between the second drain electrode and the second source electrode, the second transistor has a second SS, and the second SS is larger than the first SS.

Abstract: A dual emission type display panel has a front viewing surface and a rear viewing surface. The dual emission type display panel includes a substrate, first, second, and third top emission pixel units, and first, second, and third bottom emission pixel units. The substrate has first and second unit regions. The first, second, and third top emission pixel units, and the first, second, and third bottom emission pixel units are located on the substrate. A first top emission pixel unit, a first bottom emission pixel unit, a second top emission pixel unit, and a second bottom emission pixel unit are located in each first unit region. A third top emission pixel unit, a third bottom emission pixel unit, a second top emission pixel unit, and a second bottom emission pixel unit are located in each second unit region.

Abstract: A semiconductor device, disposed on a substrate, includes a first channel layer, a patterned doped layer, a gate insulating layer, a conducting gate electrode, a second channel layer, a first electrode and a second electrode, and a third electrode and a fourth electrode. The first channel layer is disposed on the substrate and in a first region. The patterned doped layer includes a doped gate electrode disposed in a second region, and two contact electrodes electrically connected to two sides of the first channel layer, respectively. The conducting gate electrode is disposed on the gate insulating layer in the first region. The second channel layer is disposed on the gate insulating layer in the second region. The first electrode and the second electrode are electrically connected to the contact electrodes, respectively. The third electrode and the fourth electrode are electrically connected to two sides of the second channel layer, respectively.

Abstract: A pixel structure of active matrix organic electroluminescent display panel includes a first light emitting device, a first driving switching device electrically connected to the first light emitting device for driving the first light emitting device, a second light emitting device, a second driving switching device electrically connected to the second light emitting device for driving the second light emitting device, and at least one addressing switching device electrically connected to at least one of the first driving switching device and the second driving switching device.

Abstract: A stratified organic light-emitting diode structure includes a thin-film transistor and an organic light-emitting diode (OLED). The OLED is fabricated on a planarization layer that has a top surface substantially parallel to the substrate, and the layers in the organic light-emitting diode (OLED) are substantially parallel to each other. The major part of each OLED layer has a uniform thickness so that the OLED produces a uniform brightness. The planarization layer covers the thin-film transistor entirely and the planarization layer on top of the thin-film transistor is also covered by an insulation layer. In order to electrically connect the top electrode of the OLED to the drain terminal of the thin-film transistor, an opening is made through both the top insulating layer and the planarization layer to expose part of the drain terminal. Spacers with uniform height are fabricated on the top insulating layer to protect the pixel structure.

Abstract: A semiconductor structure and an organic electroluminescence device applying the same are provided. A gate insulating layer covers a gate electrode disposed on a substrate. A channel layer has a channel length L along a channel direction and has a first side and a second side opposite to the first side. The channel layer is located on the gate insulating layer over the gate electrode. A source electrode and a drain electrode are located at and electrically connected to the first side and the second side of the channel layer, respectively. A conductive light-shielding pattern layer is disposed on a dielectric layer covering the source electrode, the drain electrode and the channel layer, and is overlapped to a portion of the source electrode and a portion of the channel layer in a vertical projection. The conductive light-shielding pattern layer and the channel layer have an overlapping length d1, and 0.3?d1/L?0.85.

Abstract: An active device and a fabricating method thereof are provided. The active device includes a buffer layer, a channel, a gate, a gate insulation layer, a source and a drain. The buffer layer is disposed on a substrate and has a positioning region. A thickness of a portion of the buffer layer in the positioning region is greater than a thickness of a portion of the buffer layer outside the positioning region. The channel is disposed on the buffer layer and in the positioning region. The gate is disposed above the channel. The gate insulation layer is disposed between the channel and the gate. The source and the drain are disposed above the channel and electrically connected to the channel.

Abstract: An active device and a fabricating method thereof are provided. The active device includes a buffer layer, a channel, a gate, a gate insulation layer, a source and a drain. The buffer layer is disposed on a substrate and has a positioning region. A thickness of a portion of the buffer layer in the positioning region is greater than a thickness of a portion of the buffer layer outside the positioning region. The channel is disposed on the buffer layer and in the positioning region. The gate is disposed above the channel. The gate insulation layer is disposed between the channel and the gate. The source and the drain are disposed above the channel and electrically connected to the channel.

Abstract: A stratified organic light-emitting diode structure includes a thin-film transistor and an organic light-emitting diode (OLED). The OLED is fabricated on a planarization layer that has a top surface substantially parallel to the substrate, and the layers in the organic light-emitting diode (OLED) are substantially parallel to each other. The major part of each OLED layer has a uniform thickness so that the OLED produces a uniform brightness. The planarization layer covers the thin-film transistor entirely and the planarization layer on top of the thin-film transistor is also covered by an insulation layer. In order to electrically connect the top electrode of the OLED to the drain terminal of the thin-film transistor, an opening is made through both the top insulating layer and the planarization layer to expose part of the drain terminal. Spacers with uniform height are fabricated on the top insulating layer to protect the pixel structure.

Abstract: A fabricating method of an organic electroluminescent display unit is provided. A gate and a gate insulating layer covering the gate are formed on the substrate. A patterned metal-oxide layer with an etching stop layer thereon is formed on the gate insulating layer. A surface treatment is performed on the patterned metal-oxide layer with use of the etching stop layer as a mask, such that a portion of the patterned metal-oxide layer uncovered by the etching stop layer has greater conductivity than conductivity of another portion of the patterned metal-oxide layer covered by the etching stop layer. The patterned metal-oxide layer treated by the surface treatment includes a pixel electrode and an active layer located above the gate. A source and a drain are then formed. And then, an organic electro-luminescence layer and a top electrode are sequentially formed on the pixel electrode.

Abstract: A mirror electroluminescent display panel includes an array substrate, a plurality of driving devices, a plurality of electroluminescent devices, and a cover substrate. The driving devices and the electroluminescent devices are disposed on the array substrate. Each electroluminescent device includes a first electrode electrically connected to the corresponding driving device, a light-emitting layer disposed on the first electrode, and a second electrode disposed on the light-emitting layer. The cover substrate and the array substrate are disposed oppositely. The cover substrate has a plurality of transmission regions, and a reflection region disposed between adjacent transmission regions, and each of the transmission regions is corresponding to each of the light-emitting layers, respectively.

Abstract: The present disclosure relates to methods and systems for synthesis of bridged-hydropentacene, hydroanthracene and hydrotetracene from the precursor compounds pentacene derivatives, tetracene derivatives, and anthracene derivatives. The invention further relates to methods and systems for forming thin films for use in electrically conductive assemblies, such as semiconductors or photovoltaic devices.

Abstract: A semiconductor device, disposed on a substrate, includes a first channel layer, a patterned doped layer, a gate insulating layer, a conducting gate electrode, a second channel layer, a first electrode and a second electrode, and a third electrode and a fourth electrode. The first channel layer is disposed on the substrate and in a first region. The patterned doped layer includes a doped gate electrode disposed in a second region, and two contact electrodes electrically connected to two sides of the first channel layer, respectively. The conducting gate electrode is disposed on the gate insulating layer in the first region. The second channel layer is disposed on the gate insulating layer in the second region. The first electrode and the second electrode are electrically connected to the contact electrodes, respectively. The third electrode and the fourth electrode are electrically connected to two sides of the second channel layer, respectively.

Abstract: A fabricating method of an organic electroluminescent display unit is provided. A gate and a gate insulating layer covering the gate are formed on the substrate. A patterned metal-oxide layer with an etching stop layer thereon is formed on the gate insulating layer. A surface treatment is performed on the patterned metal-oxide layer with use of the etching stop layer as a mask, such that a portion of the patterned metal-oxide layer uncovered by the etching stop layer has greater conductivity than conductivity of another portion of the patterned metal-oxide layer covered by the etching stop layer. The patterned metal-oxide layer treated by the surface treatment includes a pixel electrode and an active layer located above the gate. A source and a drain are then formed. And then, an organic electro-luminescence layer and a top electrode are sequentially formed on the pixel electrode.