Abstract: A semiconductor structure and an organic electroluminescence device applying the same are provided. A gate insulating layer covers a gate electrode disposed on a substrate. A channel layer has a channel length L along a channel direction and has a first side and a second side opposite to the first side. The channel layer is located on the gate insulating layer over the gate electrode. A source electrode and a drain electrode are located at and electrically connected to the first side and the second side of the channel layer, respectively. A conductive light-shielding pattern layer is disposed on a dielectric layer covering the source electrode, the drain electrode and the channel layer, and is overlapped to a portion of the source electrode and a portion of the channel layer in a vertical projection. The conductive light-shielding pattern layer and the channel layer have an overlapping length d1, and 0.3?d1/L?0.85.

Abstract: A pixel structure is disposed on a substrate and includes a gate, a gate insulating layer, a patterned metal-oxide layer, an etching stop layer, a source, and a drain. The gate is disposed on the substrate. The gate insulating layer is disposed on the substrate to cover the gate. The patterned metal-oxide layer is disposed on the gate insulating layer and includes an active layer located above the gate and a pixel electrode. The etching stop layer is disposed on a portion of the active layer. Conductivity of a portion of the patterned metal-oxide layer uncovered by the etching stop layer is greater than conductivity of a portion of the patterned metal-oxide layer covered by the etching stop layer. The source and the drain are electrically connected to a portion of the active layer uncovered by the etching stop layer. The drain is electrically connected to the pixel electrode.

Abstract: The present disclosure relates to methods and systems for synthesis of bridged-hydropentacene, hydroanthracene and hydrotetracene from the precursor compounds pentacene derivatives, tetracene derivatives, and anthracene derivatives. The invention further relates to are methods and systems for forming thin films for use in electrically conductive assemblies, such as semiconductors or photovoltaic devices.

Abstract: A pixel structure of active matrix organic electroluminescent display panel includes a first light emitting device, a first driving switching device electrically connected to the first light emitting device for driving the first light emitting device, a second light emitting device, a second driving switching device electrically connected to the second light emitting device for driving the second light emitting device, and at least one addressing switching device electrically connected to at least one of the first driving switching device and the second driving switching device.

Abstract: A pixel structure of an organic light emitting diode display includes a first transistor and a second transistor. The first transistor includes a first drain electrode and a first source electrode. When a voltage difference is provided between the first drain electrode and the first source electrode, the first transistor has a first subthreshold slope (SS). The second transistor includes a second drain electrode and a second source electrode. When the voltage difference is provided between the second drain electrode and the second source electrode, the second transistor has a second SS, and the second SS is larger than the first SS.

Abstract: A pixel structure of an electroluminescent display panel includes a substrate, a first patterned conductive layer, an insulating layer, a second patterned conductive layer, an active layer, a first passivation layer and an electroluminescent device. The first patterned conductive layer includes a gate. The insulating layer, disposed on the substrate and the first patterned conductive layer, has at least a first contact hole partially exposing the gate. The second patterned conductive layer, disposed on the insulating layer, includes a first source, a first drain, and a second drain, where the second drain is electrically connected to the gate through the first contact hole of the insulating layer.

Abstract: A pixel structure is disposed on a substrate and includes a gate, a gate insulating layer, a patterned metal-oxide layer, an etching stop layer, a source, and a drain. The gate is disposed on the substrate. The gate insulating layer is disposed on the substrate to cover the gate. The patterned metal-oxide layer is disposed on the gate insulating layer and includes an active layer located above the gate and a pixel electrode. The etching stop layer is disposed on a portion of the active layer. Conductivity of a portion of the patterned metal-oxide layer uncovered by the etching stop layer is greater than conductivity of a portion of the patterned metal-oxide layer covered by the etching stop layer. The source and the drain are electrically connected to a portion of the active layer uncovered by the etching stop layer. The drain is electrically connected to the pixel electrode.

Abstract: Methods for synthesizing 1,4-(ketone or ketal) bridged and/or 5,14-(ketone or ketal) bridged hydropentacenes useful as soluble precursors for formation of pentacene or substituted (e.g., halo) pentacenes; precursor compounds formed thereby; methods for preparing form the precursor compounds conductive thin films comprising pentacene or a substituted pentacene, and articles including such thin films are described. Also described are tetracene and anthracene derivatives which should also be useful in the formation of conductive thin films, among other uses.

Abstract: The present invention discloses a method of improving an electroluminescent efficiency of a MOS device by etching a semiconductor substrate thereof. A chemical etching process is performed to remove surface states or surface defects located on the surface of a silicon substrate before a nanoparticle layer and a conducting layer is formed on the silicon substrate, in order that the non-radiative electron-hole recombination centers located on the surface of silicon substrate is suppressed. Accordingly, the percentage of radiative electron-hole recombination is heightened and the electroluminescent efficiency of a MOS light emitting device is drastically enhanced. Advantageously, the chemical etching step is able to create a nanostructure on the surface of the silicon substrate to increase the probability of the collision of electron-hole pairs and phonons, and the electroluminescent efficiency of a MOS light emitting device is improved as well.

Abstract: The present invention discloses a method of improving an electroluminescent efficiency of a MOS device by etching a semiconductor substrate thereof. A chemical etching process is performed to remove surface states or surface defects located on the surface of a silicon substrate before a nanoparticle layer and a conducting layer is formed on the silicon substrate, in order that the non-radiative electron-hole recombination centers located on the surface of silicon substrate is suppressed. Accordingly, the percentage of radiative electron-hole recombination is heightened and the electroluminescent efficiency of a MOS light emitting device is drastically enhanced. Advantageously, the chemical etching step is able to create a nanostructure on the surface of the silicon substrate to increase the probability of the collision of electron-hole pairs and phonons, and the electroluminescent efficiency of a MOS light emitting device is improved as well.