Patents by Inventor Hsing-Jui Lee

Hsing-Jui Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHOD REDUCING THE EFFECTS OF N2 GAS CONTAMINATION IN AN ION IMPLANTER
    Publication number: 20030160179
    Abstract: A method for reducing a dinitrogen (N2) ion concentration in an ion implanter including providing an ion implanter having an ion source chamber for producing source ions said ion source chamber surrounded by a plurality of source magnets having a current supply for altering a position of said source ions; providing a gaseous source of material to the ion source chamber for ionization thereby creating a supply of source ions for implantation; creating a supply of source ions to include dinitrogen (N2) ions and nitrogen (N) ions supplied for implantation; and, increasing a current supply to at least one of the plurality of source magnets such that a ratio of dinitrogen (N2) ions to nitrogen (N) ions supplied for implantation is reduced.
    Type: Application
    Filed: February 22, 2002
    Publication date: August 28, 2003
    Applicant: Taiwn Semiconductor Manufacturing Co., Ltd.
    Inventors: Su-Yu Yeh, Chi-Bing Chen, Cheng-Yi Huang, Chao-Jie Tsai, Lu-Chang Chen, Hsing-Jui Lee
  • Method reducing the effects of N2 gas contamination in an ion implanter
    Patent number: 6605812
    Abstract: A method for reducing a dinitrogen (N2) ion concentration in an ion implanter including providing an ion implanter having an ion source chamber for producing source ions said ion source chamber surrounded by a plurality of source magnets having a current supply for altering a position of said source ions; providing a gaseous source of material to the ion source chamber for ionization thereby creating a supply of source ions for implantation; creating a supply of source ions to include dinitrogen (N2) ions and nitrogen (N) ions supplied for implantation; and, increasing a current supply to at least one of the plurality of source magnets such that a ratio of dinitrogen (N2) ions to nitrogen (N) ions supplied for implantation is reduced.
    Type: Grant
    Filed: February 22, 2002
    Date of Patent: August 12, 2003
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd
    Inventors: Su-Yu Yeh, Chi-Bing Chen, Cheng-Yi Huang, Chao-Jie Tsai, Lu-Chang Chen, Hsing-Jui Lee