Abstract: Core/shell additives, useful in modifying the processing and/or physical properties of poly(vinyl chloride) and other thermoplastic matrix polymers, are prepared separately at small particle sizes by emulsion polymerization, co-agglomerated, further encapsulated by a final shell, and isolated by spray-drying or coagulation. The isolated powders are readily re-dispersed to their original particle sizes in the matrix polymer.

Abstract: Core/shell additives, useful in modifying the processing and/or physical properties of poly(vinyl chloride) and other thermoplastic matrix polymers, are prepared separately at small particle sizes by emulsion polymerization, co-agglomerated, further encapsulated by a final shell, and isolated by spray-drying or coagulation. The isolated powders are readily re-dispersed to their original particle sizes in the matrix polymer.

Abstract: Poly(vinyl chloride) exhibits a useful combination of acceptable flow for injection molding, improved processability, and acceptable heat distortion resistance and toughness when modified with a multi-stage polymer having as one stage an alkyl (meth)acrylate polymer or copolymer containing a low level of a copolymerized unsaturated acid partly to completely in the form of its alkali metal salt. In preferred compositions, the melt viscosity under injection molding conditions of the blend will be equal to or less than that of the PVC alone.

Abstract: Core/shell additives, useful in modifying the processing and/or physical properties of poly(vinyl chloride) and other thermoplastic matrix polymers, are prepared separately at small particle sizes by emulsion polymerization, co-agglomerated, further encapsulated by a final shell, and isolated by spray-drying or coagulation. The isolated powders are readily re-dispersed to their original particle sizes in the matrix polymer.

Abstract: This invention relates to improved poly(vinyl chloride) compositions which contain ionomeric additive polymers, and to a process for preparing such compositions.

Abstract: This invention relates to poly(vinyl chloride) injection molding compositions which contain novel additive polymers which modify the rheology characteristics of the composition, and to the novel additive polymers themselves.

Abstract: A method for preparing a superconductor sputtering target is disclosed in which sputtering targets for coating superconductor films can be prepared essentially by mixing oxides (carbonates or fluorides) of metals such as Y, Ba, Cu (Bi, Pb), Sr, Ca,Cu) with the atomic ratio of individual elements be controlled in a specific range, an oxide superconductor paste being prepared by blending an organic binder and an organic solvent according to a specific solid percentage, and a metal such as aluminum being used as the substrate; by scraping with a squeegee and adjusting the distance between a stencil and the substrate such that the superconductor paste seeps through a mesh to be printed on the substrate and then dried; after scraping, screen-printing and drying having been repeated several times, the substrate being placed into an oven and heated to a temperature of 400.degree.-450.degree. C., at a rate of less than 5.degree. C.

Abstract: A thin film magnetic transducer having a magnetic circuit having nickel-iron layers which encloses a portion of first and second windings. The portions of each winding traversing the nickel-iron layers have conductor segments equal in number and separated from each other in parallel planes. The conductor segments of each winding have a center-to-center spacing different from the remaining winding selected to avoid contact with the transition regions of the nickel-iron layers and which results in a common inductance for each winding. The windings are joined at one end to form a center tapped winding.

Abstract: A method for fabricating bipolar semiconductor devices of large scale integration in which the formation of pipes, which result in shorts or leakages between two conductivity types of the semiconductor devices, is minimized. Prior to forming the emitters in the bipolar transistors, nucleation sites for crystallographic defects such as dislocation loops are formed in the base region near its surface. The emitters are then formed in base regions containing the nucleation sites and the sites are converted into electrically harmless dislocation loops during diffusion of the emitter impurity. Preferably, the nucleation sites are formed by implanting non-doping impurities, such as helium, neon, argon, krypton, xenon, silicon, and oxygen.

Abstract: A substantially square N-type impurity distribution profile in a silicon substrate produces much superior dc and ac characteristics in PN junction devices than can be expected from the usual phosphorus distribution profile. Such a square profile is obtained by diffusion of arsenic in the silicon substrate. The sharper impurity gradient allows a relatively low surface concentration to be used for the device. This lower surface concentration relieves precipitation and dislocation problems.