Abstract: A control method, suitable for a host device including a Bluetooth low energy communication circuit, includes following operations. A high priority list is obtained. The high priority list includes information about at least one first peripheral device. The BLE communication circuit is triggered to perform a first scan to search for any peripheral device around the host device. A first search result of the first scan is compared with the high priority list. In response to that the first search result covers all of the at least one first peripheral device in the high priority list, the BLE communication circuit is triggered to stop the first scan. The BLE communication circuit is triggered to communicate with the at least one first peripheral device found in the first scan.

Abstract: A network of collection, charging and distribution machines collect, charge and distribute portable electrical energy storage devices (e.g., batteries, supercapacitors or ultracapacitors). Availability of charged portable electrical energy storage devices available at a collection, charging and distribution machine are communicated to or acquired by a mobile device of a user or a user's vehicle. Once the mobile device of a user or a user's vehicle comes within close proximity of the collection, charging and distribution machine or within a particular area surrounding the collection, charging and distribution machine, the collection, charging and distribution machine or a collection, charging and distribution machine management system communicates an alert (e.g., over a cellular network, short range wireless signal or wireless fidelity (Wi-Fi) network) to the mobile device or vehicle indicating how many portable electrical energy storage devices are available at the distribution machine.

Abstract: A method for forming a semiconductor device includes steps as follows: Firstly, a semiconductor substrate having a circuit element with at least one spacer formed thereon is provided. Next, an acid treatment is performed on a surface of the spacer. A disposable layer is then formed on the circuit element and the spacer. Thereafter, an etching process is performed to form at least one recess in the semiconductor substrate adjacent to the circuit element. Subsequently, a selective epitaxial growth (SEG) process is performed to form an epitaxial layer in the recess.

Abstract: A method includes forming a first conductive feature and a second conductive feature, forming a metal pad over and electrically connected to the first conductive feature, and forming a passivation layer covering edge portions of the metal pad, with a center portion of a top surface of the metal pad exposed through an opening in the metal pad. A first dielectric layer is formed to cover the metal pad and the passivation layer. A bond pad is formed over the first dielectric layer, and the bond pad is electrically coupled to the second conductive feature. A second dielectric layer is deposited to encircle the bond pad. A planarization is performed to level a top surface of the second dielectric layer with the bond pad. At a time after the planarization is performed, an entirety of the top surface of the metal pad is in contact with dielectric materials.

Abstract: A semiconductor process including the following steps is provided. An epitaxial layer is formed on a substrate. An oxide layer is formed on the epitaxial layer, wherein the oxide layer includes a chemical oxide layer, a high-temperature oxide (HTO) layer or a surface modification oxide layer. An ion implant process is performed to the epitaxial layer to form a doped region in the epitaxial layer. The oxide layer is removed by using a diluted hydrofluoric acid (DHF) solution after performing the ion implant process, wherein a volume ratio of water to a hydrofluoric acid (HF) in the DHF solution is 200:1 to 1000:1.

Abstract: Disclosed is a structure for fixing a riding recorder with helmet visor fasteners, including a visor, which is provided, in the inside thereof, with a plurality of first coupling members so as to be attached to a helmet with the first coupling members. A monitoring unit is mounted to a bottom of the visor and the monitoring unit includes at least one camera lens and a storage element such that when the monitoring unit is activated, the camera lens is operable to take images and stores the data of the images in the storage element.

Abstract: A color filter array for an image sensing device includes a plurality of pixels, for generating a plurality of pixel data of an image; and a control unit, for controlling the plurality of pixels; wherein each of the plurality of pixels is divided into a plurality of sub-pixels; wherein the pixel data outputted by each of the plurality of pixels is generated based on at least one pixel value of the plurality of sub-pixels and the outputted pixel data is smaller than a saturated threshold; wherein at least one pixel in the plurality of pixels has a mixed color by having different sub-pixel colors in the plurality of sub-pixels.

Abstract: The optical sensor device including a sensor layer, a microlens layer and a filter layer is provided. The sensor layer includes a plurality of sensor areas, and is configured to sense a multi-wavelength light from a finger. The microlens layer includes a plurality of microlenses arranged in an array, and is disposed on the sensor layer. Each of the microlenses focuses the multi-wavelength light on a corresponding one of the sensor areas. The filter layer is disposed between the sensor layer and the microlens layer, and configured to filter the multi-wavelength light to generate a plurality of lights with different wavelengths. In addition, the fingerprint sensor apparatus including the foregoing optical sensor device is also provided.

Abstract: A chip-stacking apparatus for stacking a chip on a substrate is provided. The chip-stacking apparatus includes a substrate support configured to carry the substrate and a transport device configured to dispose a chip to the substrate. The transport device includes a bond head including a bond base and an attaching element disposed on the bond base and configured to allow the chip to be attached thereon. The center area of the attaching element is higher than an edge area of the attaching element relative to the bond base.

Abstract: Disclosed is a use of Helminthostachys zeylanica, ugonins or compounds of formula (I) for the treatment or prevention of metabolic diseases comprising at least one selected from metabolic syndrome, excessive lipid accumulation, obesity, overweight, fatty liver, hepatic steatosis, hepatitis, cirrhosis, liver cancer, dyslipidemia, hyperlipidemia, hypertriglyceridemia, hyperlipoproteinemia, hypercholesterolemia, cardiovascular disease, hyperglycemia, hyperinsulinemia, diabetes mellitus type 2, insulin resistance, insulin disorder, impaired glucose tolerance and a combination thereof.

Abstract: A network of collection, charging and distribution machines collect, charge and distribute portable electrical energy storage devices (e.g., batteries, supercapacitors or ultracapacitors). Locations of collection, charging and distribution machines having available charged portable electrical energy storage devices are communicated to or acquired by a mobile device of a user, or displayed on a collection, charging and distribution machine. The locations are indicated on a graphical user interface on a map on a user's mobile device relative to the user's current location. The user may use their mobile device select particular locations on the map to reserve an available portable electrical energy storage device. The system nay also warn the user that the user is near an edge of the pre-determined area having portable electrical energy storage device collection, charging and distribution machines. Reservations may also be made automatically based on information regarding a potential route of a user.

Abstract: An actuator is provided, including a fixed assembly and a movable assembly. The fixed assembly includes a coil module, a base, a first screwing member, and a linear rail. The first screwing member passes through the base and the linear rail, and the linear rail is positioned on the base. The movable assembly includes a U-shaped back board having an inner space, a first magnetic module, a second magnetic module aligned with the first magnetic module, and a sliding block. The first and second magnetic modules are disposed on the U-shaped back board and accommodated in the inner space. The coil module is disposed between the first magnetic module and the second magnetic module. The sliding block is positioned on the U-shaped back board in the inner space, and slidably connected to the linear rail.

Abstract: A sliding variable resistor includes a sliding base, a first supporting pole, two buffering members, a substrate, a casing assembly, an anchoring plate, a driving member, a driven member, a belt, and a belt guard. The sliding base includes two first through hole and at least one variable resistor sheet. The first supporting pole is inserted into the two first through hole. The first supporting pole has its two ends abut against the first buffering seats, respectively. The substrate is engaged with the two buffering members. The two buffering members are arranged in the casing assembly. The anchoring plate is fixedly arranged on the casing assembly. The belt is engaged with the driving member and the driven member, respectively. The belt guard is fastened to the sliding base, and is engaged with the belt. As such, the sliding base, while sliding, can have an improved smoothness.

Abstract: An apparatus for semiconductor wafer treatment includes a wafer holding unit configured to receive a single wafer, at least a solution supply unit configured to apply a solution onto the wafer and an irradiation unit configured to emit irradiation to the wafer. The irradiation unit further includes at least a plurality of first light sources configured to emit irradiation in FIR range and a plurality of second light sources configured to emit irradiation in UV range.

Abstract: The invention provides a fabricating method of a FinFET, comprising: providing a substrate having fin structures; depositing an dielectric layer on the substrate filling between the fin structures; forming recesses to reveal a portion of the fin structure by removing a portion of the dielectric layer; performing a cleaning process on using a cleaning solution selected from one of a first solution, consisting of dHF and H2O2, and a second solution, consisting of dHF and DIO3; forming a gate structure across on the fin structures; and forming a source/drain structure on the substrate at two lateral sides of the gate structure. The present invention also provides a fabricating method of a FinFET having an improved cleaning step using a cleaning solution having one of a third solution, consisting of dHF and DIO3, and a fourth solution, consisting of NH4OH and DIO3 before formation of the source/drain structure.

Abstract: A color filter array for an image sensing device is disclosed. The color filter array includes a plurality of pixels and a control unit. The plurality of pixels is utilized for generating a plurality of pixel data of an image. The control unit is utilized for controlling the plurality of pixels. In addition, each of the plurality of pixels is divided into a plurality of sub-pixels corresponding to the same color. When outputting the plurality of pixel data, each of the plurality of pixels accumulates pixel value of at least one of the plurality of sub-pixels in each of the plurality of pixels as the pixel data outputted by each of the plurality of pixels.

Abstract: A method for virtual reality (VR) includes displaying a VR event in a view of a first VR position in a VR environment in a first period, wherein a user's VR avatar is at the first VR position in the first period; recording the VR event; and redisplaying the recorded VR event in a view of a second VR position in the VR environment in a second period.

Abstract: A semiconductor process including the following steps is provided. An epitaxial layer is formed on a substrate. An oxide layer is formed on the epitaxial layer, wherein the oxide layer includes a chemical oxide layer, a high-temperature oxide (HTO) layer or a surface modification oxide layer. An ion implant process is performed to the epitaxial layer to form a doped region in the epitaxial layer. The oxide layer is removed by using a diluted hydrofluoric acid (DHF) solution after performing the ion implant process, wherein a volume ratio of water to a hydrofluoric acid (HF) in the DHF solution is 200:1 to 1000:1.

Abstract: A resistive random-access memory structure and a method for fabricating a resistive random-access memory structure are described. A first dielectric layer is formed on a substrate. A plurality of bottom electrodes are independently embedded in the first dielectric layer. A transition metal oxide layer covers the plurality of bottom electrodes and extends onto a portion of the first dielectric layer. The minimum distance between the bottom electrode and a sidewall of the transition metal oxide layer is a first distance. The first distance is in a range of 10 nm to 200 ?m. A top electrode is formed on the transition metal oxide layer.

Abstract: A virtual reality system includes a head-mounted display and a processing device. The head-mounted display is configured for displaying a virtual reality content. The processing device is coupled to the head-mounted display device and communicated with an accessory kit. The processing device is configured to collect descriptor information from the accessory kit, obtain an accessory type identification of the accessory kit from the descriptor information, and process input-output data of the accessory kit according to the accessory type identification. The input-output data corresponds to interaction between at least one virtual reality object in the virtual reality content and the accessory kit.