Abstract: Disclosed is a use of Helminthostachys zeylanica, ugonins or compounds of formula (I) for the treatment or prevention of metabolic diseases comprising at least one selected from metabolic syndrome, excessive lipid accumulation, obesity, overweight, fatty liver, hepatic steatosis, hepatitis, cirrhosis, liver cancer, dyslipidemia, hyperlipidemia, hypertriglyceridemia, hyperlipoproteinemia, hypercholesterolemia, cardiovascular disease, hyperglycemia, hyperinsulinemia, diabetes mellitus type 2, insulin resistance, insulin disorder, impaired glucose tolerance and a combination thereof.

Abstract: A semiconductor device and method of manufacture are provided. In an embodiment a first semiconductor device and a second semiconductor device are formed within a semiconductor wafer and a scribe region between the first semiconductor device and the second semiconductor device is patterned. A singulation process is then utilized within the scribe region to singulate the first semiconductor device from the second semiconductor device. The first semiconductor device and the second semiconductor device are then bonded to a second semiconductor substrate and thinned in order to remove extension regions from the first semiconductor device and the second semiconductor device.

Abstract: A method includes forming a first conductive feature and a second conductive feature, forming a metal pad over and electrically connected to the first conductive feature, and forming a passivation layer covering edge portions of the metal pad, with a center portion of a top surface of the metal pad exposed through an opening in the metal pad. A first dielectric layer is formed to cover the metal pad and the passivation layer. A bond pad is formed over the first dielectric layer, and the bond pad is electrically coupled to the second conductive feature. A second dielectric layer is deposited to encircle the bond pad. A planarization is performed to level a top surface of the second dielectric layer with the bond pad. At a time after the planarization is performed, an entirety of the top surface of the metal pad is in contact with dielectric materials.

Abstract: A semiconductor device and method are provided which utilizes a single mask to form openings for both a through substrate via as well as for a through dielectric via. In an embodiment a contact etch stop layer is deposited over and between a first semiconductor device and a second semiconductor device. A dielectric material is deposited over the contact etch stop layer between the first semiconductor device and the second semiconductor device. The different materials of the contact etch stop layer and the dielectric material is utilized such that a single mask may be used to form a through substrate via through the first semiconductor device and also to form a through dielectric via through the dielectric material.

Abstract: A network of collection, charging and distribution machines collect, charge and distribute portable electrical energy storage devices (e.g., batteries, supercapacitors or ultracapacitors). Locations of collection, charging and distribution machines having available charged portable electrical energy storage devices are communicated to or acquired by a mobile device of a user or a navigation system of a user's vehicle. The locations are indicated on a graphical user interface on a map relative to the user's current location. The user may select particular locations on the map to reserve an available portable electrical energy storage device at a particular collection, charging and distribution machine location. The collection, charging and distribution machine locations displayed may also be based on a physical distance or driving time from the current location of the user mobile device or vehicle.

Abstract: A method for processing a semiconductor device is provided. The semiconductor device includes a protruding structure on a substrate, the protruding structure having a nitride spacer at a sidewall, and an epitaxial layer is formed in the substrate adjacent to the protruding structure. The method includes removing the nitride spacer on the protruding structure. Then, a dilute hydrofluoric (DHF) cleaning process is performed over the substrate, wherein a top surficial portion of the epitaxial layer is removed. A standard clean (SC) process is performed over the substrate, wherein a native oxide layer is formed on an expose surface of the epitaxial layer.

Abstract: The integrated circuit device disclosed herein includes a substrate, an interlevel dielectric layer disposed over the substrate, an intermetal dielectric layer disposed over the interlevel dielectric layer, an interconnect structure extending through the intermetal dielectric layer, and a through via (TV) extending through the intermetal dielectric layer and at least a portion of the substrate, the through via having a top surface co-planar with a top surface of the interconnect structure. In some embodiments, the through via is formed before the interconnect structure. In other embodiments, the interconnect structure is formed before the through via. In an embodiment, a fin field effect transistor (FinFET) is formed over the substrate.

Abstract: A semiconductor device and method of manufacture are provided. In an embodiment a first semiconductor device and a second semiconductor device are formed within a semiconductor wafer and a scribe region between the first semiconductor device and the second semiconductor device is patterned. A singulation process is then utilized within the scribe region to singulate the first semiconductor device from the second semiconductor device. The first semiconductor device and the second semiconductor device are then bonded to a second semiconductor substrate and thinned in order to remove extension regions from the first semiconductor device and the second semiconductor device.

Abstract: An etching method with a surface modification treatment for forming a semiconductor structure is provided. The method includes providing a semiconductor substrate, forming a silicon nitride (SiN) layer on the semiconductor substrate, and forming a silicon-containing layer on the semiconductor substrate and beside the SiN layer. The silicon-containing layer includes a silicon dioxide layer, a n-type silicon-containing layer, a p-type silicon-containing layer or a combination thereof. The method further includes performing a surface modification treatment onto the SiN layer and the silicon-containing layer by using a surface modification solution, thereby forming a modified layer on the SiN layer and the silicon-containing layer. The method further includes removing a portion of the modified layer and its underlying SiN layer by a wet etching operation, while the other portion of the modified layer and its underlying silicon-containing layer remain, and removing the other portion of the modified layer.

Abstract: A control method, suitable for an electronic device, includes following operations. A first connection is established based on a classic Bluetooth protocol or a Bluetooth Low Energy protocol from the electronic device to a first target device. A Bluetooth identifier of the first target device acquired in the first connection is recorded. The Bluetooth identifier of the first target device is shared. The Bluetooth identifier is utilized to establish a second connection based on the classic Bluetooth protocol or the Bluetooth Low Energy protocol to the first target device. The first connection and the second connection are established based on different protocols.

Abstract: A sliding variable resistor includes a sliding base, a first supporting pole, two buffering members, a substrate, a casing assembly, an anchoring plate, a driving member, a driven member, a belt, and a belt guard. The sliding base includes two first through hole and at least one variable resistor sheet. The first supporting pole is inserted into the two first through hole. The first supporting pole has its two ends abut against the first buffering seats, respectively. The substrate is engaged with the two buffering members. The two buffering members are arranged in the casing assembly. The anchoring plate is fixedly arranged on the casing assembly. The belt is engaged with the driving member and the driven member, respectively. The belt guard is fastened to the sliding base, and is engaged with the belt. As such, the sliding base, while sliding, can have an improved smoothness.

Abstract: A backside illumination global shutter pixel is disposed in a substrate having a first surface and a second surface and includes an isolation structure having a deep trench isolation pattern, a storage node, and a photoelectric conversion element. The deep trench isolation pattern has a channel and defines a first region and a second region connected with each other by the channel. The storage node is disposed in the second region. The photoelectric conversion element has a main photoelectric conversion portion disposed in the first region and an extending photoelectric conversion portion extended from the main photoelectric conversion portion through the channel to the second region. The extending photoelectric conversion portion is disposed between the second surface and the storage node. A backside illumination global shutter sensor including a plurality of backside illumination global shutter pixels is also provided.

Abstract: A compensational control method includes the steps of: controlling a plurality of indoor air conditioning apparatuses to be in operation according to a target temperature; receiving continuously an operating parameter and an environmental datum from each of the indoor air conditioning apparatus; determining whether there is a specific indoor air conditioning apparatus that needs support; acquiring an adjacent indoor air conditioning apparatus which is influential for the specific indoor air conditioning apparatus according to an influence form which is previously built; establishing a supportive strategy according to a supportable operation capability of the adjacent indoor air conditioning apparatus; and adjusting the operating parameter of the adjacent indoor air conditioning apparatus according to the supportive strategy. Therefore, the adjacent indoor air conditioning apparatus is provided to improve an ambient temperature of an area where the specific indoor air conditioning apparatus is installed.

Abstract: A method for post chemical mechanical polishing clean is provided in the present invention, which include the steps of providing a substrate, performing a chemical mechanical polishing process, and performing a plurality of cleaning processes sequentially substrate using solutions of sulfuric acid (H2SO4) and hydrogen peroxide (H2O2) with different ratios and at different temperatures.

Abstract: An optical apparatus adapted to contact an object is provided. The optical apparatus includes an optical device and a processing circuit. The optical device includes a reflection structure and a transmission structure. The optical device senses light signals of the object via the reflection structure and the transmission structure. The processing circuit is electrically connected to the optical device. The processing circuit is configured to identify the object according to the light signals. In addition, a method for identifying an object is also provided.

Abstract: A medical imaging system (10) comprises one or more displays (66). A viewer device (86) generates an interactive user interface screen (80) on the display (66), which viewer device (86) enables a user to simultaneously inspect selected image data of multiple patients or multiple images.

Abstract: An inspection mechanism for metal blank, adapted for sensing the surface condition of a metal blank, includes a framework, a holding device, a shuffling device, and an inductive control device. It mainly utilizes the inductive control device to drive the holding device to hold and position the metal blank and control the shuffling device to move the sensor of the inductive control device to the path of sensing the metal blank, so as to conduct the sensing operation.

Abstract: A resistive random access memory is provided. The resistive random access memory includes a bottom electrode over a substrate, a top electrode, a resistance-switching layer, an oxygen exchange layer, and a sidewall protective layer. The top electrode is disposed over the bottom electrode. The resistance-switching layer is disposed between the bottom electrode and the top electrode. The oxygen exchange layer is disposed between the resistance-switching layer and the top electrode. The sidewall protective layer containing metal or semiconductor is disposed at sidewalls of the resistance-switching layer, and the sidewalls of the resistance-switching layer is doped with the metal or semiconductor from the sidewall protective layer.

Abstract: A two-way distribution, charging, and vending system permits a subscriber to exchange one or more partially or completely discharged portable electric energy storage devices for a comparable number of charged portable electric energy storage devices. The two-way distribution, charging, and vending system includes a number of charging modules, each with a dedicated power converter, communicably coupled to at least one two-way distribution system controller and to a power distribution grid. Upon receipt of a discharged portable electric energy storage device, the at least one two-way distribution system controller validates a manufacturer identifier and a subscriber identifier stored in a nontransitory storage media carried by the discharged portable electric energy storage device. Responsive to a successful authentication and validation, the at least one two-way distribution system controller dispenses a charged portable electric energy storage device to the subscriber.

Abstract: A control method, suitable for a host device including a Bluetooth low energy communication circuit, includes following operations. A high priority list is obtained. The high priority list includes information about at least one first peripheral device. The BLE communication circuit is triggered to perform a first scan to search for any peripheral device around the host device. A first search result of the first scan is compared with the high priority list. In response to that the first search result covers all of the at least one first peripheral device in the high priority list, the BLE communication circuit is triggered to stop the first scan. The BLE communication circuit is triggered to communicate with the at least one first peripheral device found in the first scan.