Abstract: A modular socket system with automatic power interruption includes modular socket, a detected data collection and system determination module, a power-off execution module, and a sever database. The modular socket continuously receives power-off signals, and transmits the power-off signals to the detected data collection and system determination module for the determination of power-off, and the power-off execution module executes a power-off procedure accordingly. The detected data collection and system determination module includes a detected data collecting module and a power-off determining system module connected. The detected data collecting module has an optical identifying module and a connection status determining module connected. The power-off determining system module includes an unplug detecting and determining module, a poor contact determining module, a Bluetooth offline determining module, and a hardware disconnection determining module.

Abstract: A memory structure including a substrate, a first doped region, a second doped region, a first gate, a second gate, a first charge storage structure, and a second charge storage structure is provided. The first gate is located on the first doped region. The second gate is located on the second doped region. The first charge storage structure is located between the first gate and the first doped region. The first charge storage structure includes a first tunneling dielectric layer, a first dielectric layer, and a first charge storage layer. The second charge storage structure is located between the second gate and the second doped region. The second charge storage structure includes a second tunneling dielectric layer, a second dielectric layer, and a second charge storage layer. The thickness of the second tunneling dielectric layer is greater than the thickness of the first tunneling dielectric layer.

Abstract: An optoelectronic package and a method for producing the optoelectronic package are provided. The optoelectronic package includes a carrier, a photonic device, a first encapsulant and a second encapsulant. The photonic device is disposed on the carrier. The first encapsulant covers the carrier and is disposed around the photonic device. The second encapsulant covers the first encapsulant and the photonic device. The first encapsulant has a topmost position and a bottommost position, and the topmost position is not higher than a surface of the photonic device.

Abstract: A healable and recyclable polyimide polymer resin includes a chemical structural unit represented by formula (I), which is defined in the description. The chemical structural unit represented by the formula (I) bonds to at least one condensation-polymerizable monomer, so as to form the healable and recyclable polyimide polymer resin, and the condensation-polymerizable monomer is a diamine monomer or a dianhydride monomer.

Abstract: A halide material having general formula ArMAX is disclosed. The halide material can be processed to an optoelectronic film with a halogenated formamidine and a lead halide, and the optoelectronic film can be applied in the manufacture of an optoelectronic device like a perovskite laser or a PeLED. Experimental data have proved that, the fabricated optoelectronic film shows a property of photoluminescence (PL) peak wavelength adjustable. Moreover, the PL peak wavelength moves from 482 nm to 534 nm with the increase of the content of lead (Pb), halogen (X) and formamidine (FA) in the optoelectronic film. Furthermore, experimental data have also indicated that, the fabricated optoelectronic film can be used as a blue emissive layer, a red emissive layer or a green emissive layer, thereby having a significant potential for application in optoelectronics industry.

Abstract: A method of preparing a self-healing composition is disclosed, the method including following steps. An isocyanate solution, a dihydric alcohol solution, and a metal salt solution are provided. The dihydric alcohol has heterocyclic structures. The isocyanate solution and the dihydric alcohol solution are mixed, causing the isocyanate and the dihydric alcohol polymerize to form a polymer precursor. The polymer precursor includes a hard segment and a soft segment. The hard segment includes urethane groups, the soft segment includes heterocyclic structures. The polymer precursor and the metal salt solution are mixed, causing the heterocyclic structures and metal ions to undergo a chelation reaction to form a coordination complex, thereby forming the self-healing composition. A self-healing composition prepared by the method, and self-healing film using the self-healing composition are also disclosed.

Abstract: When programming an MLC memory device, the disturb characteristics of a program block having multiple memory cells are measured, and the threshold voltage variations of the multiple memory cells are then acquired based on the disturb characteristics of the program block. Next, multiple initial program voltage pulses are provided according to a predetermined signal level, and multiple compensated program voltage pulses are provided by adjusting the multiple initial program voltage pulses. Last, the multiple compensated program voltage pulses are outputted to the program block for programming the multiple memory cells to the predetermined signal level.

Abstract: An asymmetric fused aromatic ring derivative containing sulfonyl group, which includes a structure represented by formula (I). Formula (I) is defined as in the specification. A use of the asymmetric fused aromatic ring derivative containing sulfonyl group, which is used as a photocatalyst. A hydrogen production device, which includes the asymmetric fused aromatic ring derivative containing sulfonyl group. An optoelectronic component, which includes the asymmetric fused aromatic ring derivative containing sulfonyl group.

Abstract: A terahertz modulator includes a substrate and an organic semiconductor layer. A material of the organic semiconductor layer is graphitic carbon nitride, and the organic semiconductor layer is coated on a surface of the substrate. The terahertz modulator has a high on-off contrast and is able to reach a high modulation speed. A terahertz spatial light modulator includes a terahertz modulator and an automatic pumped light spatial modulator. The automatic pumped light spatial modulator is optically connected with the terahertz modulator. The terahertz spatial light modulator generates a patterned terahertz light, and the terahertz spatial light modulator has a high on-off contrast and is able to reach a high modulation speed.

Abstract: A non-volatile memory device includes a substrate. A plurality of shallow trench isolation (STI) lines are disposed on the substrate and extend along a first direction. A memory gate structure is disposed on the substrate between adjacent two of the plurality of STI lines. A trench line is disposed in the substrate and extends along a second direction intersecting the first direction, wherein the trench line also crosses top portions of the plurality of STI lines. A conductive line is disposed in the trench line and used as a selection line to be coupled to the memory gate structure.

Abstract: The present disclosure provides a non-fullerene acceptor polymer, which includes a structure represented by formula (I). Formula (I) is defined as in the specification. The non-fullerene acceptor polymer has an electron donating unit and an electron attracting end group. The non-fullerene acceptor polymer uses phenyl or its derivatives as the linker to form the polymer.

Abstract: A composite material for photocatalytic hydrogen production and a photocatalytic hydrogen production catalyst are provided. The composite material includes a plurality of inorganic semiconductor particles and a linear conjugated polymer material. The conductive band of a material of the inorganic semiconductor particles is higher than the reduction potential of hydrogen, and the linear conjugated polymer material is compounded on a surface of each of the inorganic semiconductor particles, wherein the difference in the energy level of the lowest unoccupied molecular orbital (LUMO) of the linear conjugated polymer material and the conductive band of the material of the inorganic semiconductor particles is within 2 eV.

Abstract: A halide material having general formula ArMAX is disclosed. The halide material can be processed to an optoelectronic film with a halogenated formamidine and a lead halide, and the optoelectronic film can be applied in the manufacture of an optoelectronic device like a perovskite laser or a PeLED. Experimental data have proved that, the fabricated optoelectronic film shows a property of photoluminescence (PL) peak wavelength adjustable. Moreover, the PL peak wavelength moves from 482 nm to 534 nm with the increase of the content of lead (Pb), halogen (X) and formamidine (FA) in the optoelectronic film Furthermore, experimental data have also indicated that, the fabricated optoelectronic film can be used as a blue emissive layer, a red emissive layer or a green emissive layer, thereby having a significant potential for application in optoelectronics industry.

Abstract: A method of preparing a self-healing composition is disclosed, the method including following steps. An isocyanate solution, a dihydric alcohol solution, and a metal salt solution are provided. The dihydric alcohol has heterocyclic structures. The isocyanate solution and the dihydric alcohol solution are mixed, causing the isocyanate and the dihydric alcohol polymerize to form a polymer precursor. The polymer precursor includes a hard segment and a soft segment. The hard segment includes urethane groups, the soft segment includes heterocyclic structures. The polymer precursor and the metal salt solution are mixed, causing the heterocyclic structures and metal ions to undergo a chelation reaction to form a coordination complex, thereby forming the self-healing composition. A self-healing composition prepared by the method, and self-healing film using the self-healing composition are also disclosed.

Abstract: A non-volatile memory device includes a substrate. A plurality of shallow trench isolation (STI) lines are disposed on the substrate and extend along a first direction. A memory gate structure is disposed on the substrate between adjacent two of the plurality of STI lines. A trench line is disposed in the substrate and extends along a second direction intersecting the first direction, wherein the trench line also crosses top portions of the plurality of STI lines. A conductive line is disposed in the trench line and used as a selection line to be coupled to the memory gate structure.

Abstract: The present disclosure provides a semiconductor compound, which includes a metal complex unit and a conjugate unit. The metal complex unit includes a coordination center and a plurality of ligands. The coordination center is a metal ion or a metal atom, and the ligands are linked with the coordination center. The conjugate unit is linked with the metal complex unit by covalent bond.

Abstract: Embodiments in accordance with the present disclosure include apparatuses, devices, and methods. For example, an apparatus includes an electronic force sensor having a first opposing electrode and a second opposing electrode. The first and second opposing electrodes are configured to generate an output indicative of a force applied to the electronic force sensor. The electronic force sensor further includes a plurality of recoverably-deformable structures arranged between the first and the second opposing electrodes and having a plurality of conductive-resistive elements. Each of the recoverably-deformable structures including at least one of a variable conductor and a variable resistor and configured and arranged with attributes that set a force sensitivity of the electronic force sensor.

Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a semiconductor substrate having a tunneling well, a tunneling oxide layer, a charge storage layer and a control gate. The tunneling oxide layer is disposed on the tunneling well. The tunneling oxide layer includes a first tunneling oxide segment having a first thickness, a second tunneling oxide segment having a second thickness, and a third tunneling oxide segment having a third thickness, and the first thickness, the second thickness and the third thickness are different from each other. The charge storage layer is disposed on the tunneling oxide layer, and the control gate is disposed on the charge storage layer.

Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a semiconductor substrate having a tunneling well, a tunneling oxide layer, a charge storage layer and a control gate. The tunneling oxide layer is disposed on the tunneling well. The tunneling oxide layer includes a first tunneling oxide segment having a first thickness, a second tunneling oxide segment having a second thickness, and a third tunneling oxide segment having a third thickness, and the first thickness, the second thickness and the third thickness are different from each other. The charge storage layer is disposed on the tunneling oxide layer, and the control gate is disposed on the charge storage layer.

Abstract: A non-volatile memory (NVM) device includes a substrate, a charge trapping structure, a first gate electrode and a spacer. The charge trapping structure is disposed on the substrate. The first gate electrode is disposed on the charge trapping structure. The spacer is disposed on at least one sidewall of the first gate electrode and the charge trapping structure. Wherein, the charge trapping structure has a lateral size substantially greater than that of the first gate electrode.