Abstract: A terahertz modulator includes a substrate and an organic semiconductor layer. A material of the organic semiconductor layer is graphitic carbon nitride, and the organic semiconductor layer is coated on a surface of the substrate. The terahertz modulator has a high on-off contrast and is able to reach a high modulation speed. A terahertz spatial light modulator includes a terahertz modulator and an automatic pumped light spatial modulator. The automatic pumped light spatial modulator is optically connected with the terahertz modulator. The terahertz spatial light modulator generates a patterned terahertz light, and the terahertz spatial light modulator has a high on-off contrast and is able to reach a high modulation speed.

Abstract: Provided are a memory structure and a manufacturing method thereof. The memory structure includes first and second gates, a dielectric hump, a first spacer, a charge storage layer, a gate dielectric layer, a high-k layer and doped regions. The first and the second gates are disposed on a substrate. The dielectric hump is disposed on the substrate between the first gate and the second gate. The first spacer is disposed on a sidewall of the dielectric hump. The charge storage layer is disposed between the first gate and the substrate. The gate dielectric layer is disposed between the second gate and the substrate. The high-k layer is disposed between the first gate and the charge storage layer and between the second gate and the gate dielectric layer. The doped regions are disposed in the substrate at two sides of the first gate and at two sides of the second gate.

Abstract: Provided are a memory structure and a manufacturing method thereof. The memory structure includes a substrate having first and second regions, first and second isolation structures in the substrate, a charge storage layer on the substrate, first and second gates and doped regions. The first isolation structures define first active areas in the first region. A top surface of the first isolation structure is higher than that of the substrate. The second isolation structures define second active areas in the second region. A top surface of the second isolation structure is lower than that of the substrate. The first gate is on the charge storage layer in the first active area. The second gate is on the charge storage layer in the second active area. The doped regions are in the substrate at two sides of the first gate and at two sides of the second gate.

Abstract: An asymmetric fused aromatic ring derivative containing sulfonyl group, which includes a structure represented by formula (I). Formula (I) is defined as in the specification. A use of the asymmetric fused aromatic ring derivative containing sulfonyl group, which is used as a photocatalyst. A hydrogen production device, which includes the asymmetric fused aromatic ring derivative containing sulfonyl group. An optoelectronic component, which includes the asymmetric fused aromatic ring derivative containing sulfonyl group.

Abstract: A healable and recyclable polyimide polymer resin includes a chemical structural unit represented by formula (I), which is defined in the description. The chemical structural unit represented by the formula (I) bonds to at least one condensation-polymerizable monomer, so as to form the healable and recyclable polyimide polymer resin, and the condensation-polymerizable monomer is a diamine monomer or a dianhydride monomer.

Abstract: The present invention relates to a method of preparing covalent organic frameworks. A gamma ray illuminates monomers for triggering polymerization and producing covalent organic frameworks. The reaction can be performed at normal temperature and pressure. By shortening the reaction time, the method is beneficial to industrial mass production.

Abstract: When programming an MLC memory device, the disturb characteristics of a program block having multiple memory cells are measured, and the threshold voltage variations of the multiple memory cells are then acquired based on the disturb characteristics of the program block. Next, multiple initial program voltage pulses are provided according to a predetermined signal level, and multiple compensated program voltage pulses are provided by adjusting the multiple initial program voltage pulses. Last, the multiple compensated program voltage pulses are outputted to the program block for programming the multiple memory cells to the predetermined signal level.

Abstract: A non-fullerene acceptor polymer includes a structure represented by formula (I). Formula (I) is defined as in the specification. The non-fullerene acceptor polymer has an electron donating unit and an electron attracting end group. The non-fullerene acceptor polymer uses phenyl or its derivatives as the linker to form the polymer.

Abstract: A memory structure including a substrate, a first doped region, a second doped region, a first gate, a second gate, a first charge storage structure, and a second charge storage structure is provided. The first gate is located on the first doped region. The second gate is located on the second doped region. The first charge storage structure is located between the first gate and the first doped region. The first charge storage structure includes a first tunneling dielectric layer, a first dielectric layer, and a first charge storage layer. The second charge storage structure is located between the second gate and the second doped region. The second charge storage structure includes a second tunneling dielectric layer, a second dielectric layer, and a second charge storage layer. The thickness of the second tunneling dielectric layer is greater than the thickness of the first tunneling dielectric layer.

Abstract: A healable and recyclable polyimide polymer resin includes a chemical structural unit represented by formula (I), which is defined in the description. The chemical structural unit represented by the formula (I) bonds to at least one condensation-polymerizable monomer, so as to form the healable and recyclable polyimide polymer resin, and the condensation-polymerizable monomer is a diamine monomer or a dianhydride monomer.

Abstract: A halide material having general formula ArMAX is disclosed. The halide material can be processed to an optoelectronic film with a halogenated formamidine and a lead halide, and the optoelectronic film can be applied in the manufacture of an optoelectronic device like a perovskite laser or a PeLED. Experimental data have proved that, the fabricated optoelectronic film shows a property of photoluminescence (PL) peak wavelength adjustable. Moreover, the PL peak wavelength moves from 482 nm to 534 nm with the increase of the content of lead (Pb), halogen (X) and formamidine (FA) in the optoelectronic film. Furthermore, experimental data have also indicated that, the fabricated optoelectronic film can be used as a blue emissive layer, a red emissive layer or a green emissive layer, thereby having a significant potential for application in optoelectronics industry.

Abstract: A method of preparing a self-healing composition is disclosed, the method including following steps. An isocyanate solution, a dihydric alcohol solution, and a metal salt solution are provided. The dihydric alcohol has heterocyclic structures. The isocyanate solution and the dihydric alcohol solution are mixed, causing the isocyanate and the dihydric alcohol polymerize to form a polymer precursor. The polymer precursor includes a hard segment and a soft segment. The hard segment includes urethane groups, the soft segment includes heterocyclic structures. The polymer precursor and the metal salt solution are mixed, causing the heterocyclic structures and metal ions to undergo a chelation reaction to form a coordination complex, thereby forming the self-healing composition. A self-healing composition prepared by the method, and self-healing film using the self-healing composition are also disclosed.

Abstract: When programming an MLC memory device, the disturb characteristics of a program block having multiple memory cells are measured, and the threshold voltage variations of the multiple memory cells are then acquired based on the disturb characteristics of the program block. Next, multiple initial program voltage pulses are provided according to a predetermined signal level, and multiple compensated program voltage pulses are provided by adjusting the multiple initial program voltage pulses. Last, the multiple compensated program voltage pulses are outputted to the program block for programming the multiple memory cells to the predetermined signal level.

Abstract: An asymmetric fused aromatic ring derivative containing sulfonyl group, which includes a structure represented by formula (I). Formula (I) is defined as in the specification. A use of the asymmetric fused aromatic ring derivative containing sulfonyl group, which is used as a photocatalyst. A hydrogen production device, which includes the asymmetric fused aromatic ring derivative containing sulfonyl group. An optoelectronic component, which includes the asymmetric fused aromatic ring derivative containing sulfonyl group.

Abstract: A terahertz modulator includes a substrate and an organic semiconductor layer. A material of the organic semiconductor layer is graphitic carbon nitride, and the organic semiconductor layer is coated on a surface of the substrate. The terahertz modulator has a high on-off contrast and is able to reach a high modulation speed. A terahertz spatial light modulator includes a terahertz modulator and an automatic pumped light spatial modulator. The automatic pumped light spatial modulator is optically connected with the terahertz modulator. The terahertz spatial light modulator generates a patterned terahertz light, and the terahertz spatial light modulator has a high on-off contrast and is able to reach a high modulation speed.

Abstract: A non-volatile memory device includes a substrate. A plurality of shallow trench isolation (STI) lines are disposed on the substrate and extend along a first direction. A memory gate structure is disposed on the substrate between adjacent two of the plurality of STI lines. A trench line is disposed in the substrate and extends along a second direction intersecting the first direction, wherein the trench line also crosses top portions of the plurality of STI lines. A conductive line is disposed in the trench line and used as a selection line to be coupled to the memory gate structure.

Abstract: The present disclosure provides a non-fullerene acceptor polymer, which includes a structure represented by formula (I). Formula (I) is defined as in the specification. The non-fullerene acceptor polymer has an electron donating unit and an electron attracting end group. The non-fullerene acceptor polymer uses phenyl or its derivatives as the linker to form the polymer.

Abstract: A composite material for photocatalytic hydrogen production and a photocatalytic hydrogen production catalyst are provided. The composite material includes a plurality of inorganic semiconductor particles and a linear conjugated polymer material. The conductive band of a material of the inorganic semiconductor particles is higher than the reduction potential of hydrogen, and the linear conjugated polymer material is compounded on a surface of each of the inorganic semiconductor particles, wherein the difference in the energy level of the lowest unoccupied molecular orbital (LUMO) of the linear conjugated polymer material and the conductive band of the material of the inorganic semiconductor particles is within 2 eV.

Abstract: A halide material having general formula ArMAX is disclosed. The halide material can be processed to an optoelectronic film with a halogenated formamidine and a lead halide, and the optoelectronic film can be applied in the manufacture of an optoelectronic device like a perovskite laser or a PeLED. Experimental data have proved that, the fabricated optoelectronic film shows a property of photoluminescence (PL) peak wavelength adjustable. Moreover, the PL peak wavelength moves from 482 nm to 534 nm with the increase of the content of lead (Pb), halogen (X) and formamidine (FA) in the optoelectronic film Furthermore, experimental data have also indicated that, the fabricated optoelectronic film can be used as a blue emissive layer, a red emissive layer or a green emissive layer, thereby having a significant potential for application in optoelectronics industry.

Abstract: A method of preparing a self-healing composition is disclosed, the method including following steps. An isocyanate solution, a dihydric alcohol solution, and a metal salt solution are provided. The dihydric alcohol has heterocyclic structures. The isocyanate solution and the dihydric alcohol solution are mixed, causing the isocyanate and the dihydric alcohol polymerize to form a polymer precursor. The polymer precursor includes a hard segment and a soft segment. The hard segment includes urethane groups, the soft segment includes heterocyclic structures. The polymer precursor and the metal salt solution are mixed, causing the heterocyclic structures and metal ions to undergo a chelation reaction to form a coordination complex, thereby forming the self-healing composition. A self-healing composition prepared by the method, and self-healing film using the self-healing composition are also disclosed.