Abstract: A non-volatile memory device includes a substrate. A plurality of shallow trench isolation (STI) lines are disposed on the substrate and extend along a first direction. A memory gate structure is disposed on the substrate between adjacent two of the plurality of STI lines. A trench line is disposed in the substrate and extends along a second direction intersecting the first direction, wherein the trench line also crosses top portions of the plurality of STI lines. A conductive line is disposed in the trench line and used as a selection line to be coupled to the memory gate structure.

Abstract: The present disclosure provides a semiconductor compound, which includes a metal complex unit and a conjugate unit. The metal complex unit includes a coordination center and a plurality of ligands. The coordination center is a metal ion or a metal atom, and the ligands are linked with the coordination center. The conjugate unit is linked with the metal complex unit by covalent bond.

Abstract: Embodiments in accordance with the present disclosure include apparatuses, devices, and methods. For example, an apparatus includes an electronic force sensor having a first opposing electrode and a second opposing electrode. The first and second opposing electrodes are configured to generate an output indicative of a force applied to the electronic force sensor. The electronic force sensor further includes a plurality of recoverably-deformable structures arranged between the first and the second opposing electrodes and having a plurality of conductive-resistive elements. Each of the recoverably-deformable structures including at least one of a variable conductor and a variable resistor and configured and arranged with attributes that set a force sensitivity of the electronic force sensor.

Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a semiconductor substrate having a tunneling well, a tunneling oxide layer, a charge storage layer and a control gate. The tunneling oxide layer is disposed on the tunneling well. The tunneling oxide layer includes a first tunneling oxide segment having a first thickness, a second tunneling oxide segment having a second thickness, and a third tunneling oxide segment having a third thickness, and the first thickness, the second thickness and the third thickness are different from each other. The charge storage layer is disposed on the tunneling oxide layer, and the control gate is disposed on the charge storage layer.

Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a semiconductor substrate having a tunneling well, a tunneling oxide layer, a charge storage layer and a control gate. The tunneling oxide layer is disposed on the tunneling well. The tunneling oxide layer includes a first tunneling oxide segment having a first thickness, a second tunneling oxide segment having a second thickness, and a third tunneling oxide segment having a third thickness, and the first thickness, the second thickness and the third thickness are different from each other. The charge storage layer is disposed on the tunneling oxide layer, and the control gate is disposed on the charge storage layer.

Abstract: A non-volatile memory (NVM) device includes a substrate, a charge trapping structure, a first gate electrode and a spacer. The charge trapping structure is disposed on the substrate. The first gate electrode is disposed on the charge trapping structure. The spacer is disposed on at least one sidewall of the first gate electrode and the charge trapping structure. Wherein, the charge trapping structure has a lateral size substantially greater than that of the first gate electrode.

Abstract: Triptycene derivatives having symmetric or asymmetric substituents are provided. The triptycene derivatives of the present invention may be applied in phosphorescent lighting devices ranging from deep blue to red and may be applied as a host material, an electron transporting material or a hole transporting material. An OLED device is also herein disclosed.

Abstract: Embodiments in accordance with the present disclosure include apparatuses, devices, and methods. For example, an apparatus includes an electronic force sensor having a first opposing electrode and a second opposing electrode. The first and second opposing electrodes are configured to generate an output indicative of a force applied to the electronic force sensor. The electronic force sensor further includes a plurality of recoverably-deformable structures arranged between the first and the second opposing electrodes and having a plurality of conductive-resistive elements. Each of the recoverably-deformable structures including at least one of a variable conductor and a variable resistor and configured and arranged with attributes that set a force sensitivity of the electronic force sensor.

Abstract: A method for manufacturing a silicon-oxide-nitride-oxide-silicon non-volatile memory cell includes following steps. An implant region is formed in a substrate. A first oxide layer, a nitride layer, and a second oxide layer are formed and stacked on the substrate. A density of the second oxide layer is higher than a density of the first oxide layer. A first photoresist pattern is formed on the second oxide layer and corresponding to the implant region. A first wet etching process is then performed to form an oxide hard mask. A second wet etching process is performed to remove the nitride layer exposed by the oxide hard mask to form a nitride pattern. A cleaning process is then performed to remove the oxide hard mask and the first oxide layer exposed by the nitride pattern, and a gate oxide layer is then formed on the nitride pattern.

Abstract: A method for fabricating a non-volatile memory semiconductor device is disclosed. The method includes the steps of providing a substrate; forming a gate pattern on the substrate, wherein the gate pattern comprises a first polysilicon layer on the substrate, an oxide-nitride-oxide (ONO) stack on the first polysilicon layer, and a second polysilicon layer on the ONO stack; forming an oxide layer on the top surface and sidewall of the gate pattern; performing a first etching process to remove part of the oxide layer; and performing a second etching process to completely remove the remaining oxide layer.

Abstract: Triptycene derivatives having symmetric or asymmetric substituents are provided. The triptycene derivatives of the present invention may be applied in phosphorescent lighting devices ranging from deep blue to red and may be applied as a host material, an electron transporting material or a hole transporting material. An OLED device is also herein disclosed.

Abstract: Triphenylene derivatives having a structure of formula (1) are provided. Ar represents an aromatic compound, n is 1 to 3, and each of R and R1 to R13 is a member independently selected from the group consisting of hydrogen, halo, cyano, trifluoromethyl, amino, C1-C10 alkyl, C2-C10 alkenyl, C2-C10 alkynyl, C3-C20 cycloalkyl, C3-C20 cycloalkenyl, C1-C20 heterocycloalkyl, C1-C20 heterocycloalkenyl, aryl and heteroaryl. The compound of the present invention may function as a host emitter or dopant in the emitter layer of OLED device. An OLED device is also herein provided.

Abstract: The present invention relates to imidazole derivatives having vinyl group represented by general formula (I) which possess electron transporting character, have a high glass transition temperature (Tg), and high decomposition temperature (Td): wherein all symbols are defined as recited in the specification. The present invention also relates to a use of the imidazole derivatives having vinyl group as a guest emitter or electron transporter in luminescent elements.

Abstract: The present invention relates to imidazole derivatives having vinyl group represented by general formula (I) which possess electron transporting character, have a high glass transition temperature (Tg), and high decomposition temperature (Td): wherein all symbols are defined as recited in the specification. The present invention also relates to a use of the imidazole derivatives having vinyl group as a guest emitter or electron transporter in luminescent elements.

Abstract: Triphenylene derivatives having a structure of formula (1) are provided. Ar represents an aromatic compound, n is 1 to 3, and each of R and R1 to R13 is a member independently selected from the group consisting of hydrogen, halo, cyano, trifluoromethyl, amino, C1-C10 alkyl, C2-C10 alkenyl, C2-C10 alkynyl, C3-C20 cycloalkyl, C3-C20 cycloalkenyl, C1-C20 heterocycloalkyl, C1-C20 heterocycloalkenyl, aryl and heteroaryl. The compound of the present invention may function as a host emitter or dopant in the emitter layer of OLED device. An OLED device is also herein provided.

Abstract: The invention provides a light-emission material comprising a compound having Formula (I): wherein each of A independently is: each of Rm independently is H, alkyl, alkenyl, alkynyl, CN, CF3, alkylamino, amino, alkoxy, halo, aryl, or heteroaryl.

Abstract: The present invention discloses conjugated compounds containing heteroatom-centered arylsilane derivatives and their applications as host materials, electron transport materials, or hole transport materials in an organic electroluminescent device. The general structure of the conjugated compounds containing heteroatom-centered arylsilane derivatives is as follows: where X1, X2, X3, and X4 can be identical or different and X1, X2, X3, and X4 are independently selected from the group consisting of the following: H, B, N, P?O, Si—R9; and R1, R2, R3, R4, R5, R6, R7, R8, and R9 can be identical or different and R1, R2, R3, R4, R5, R6, R7, R8, and R9 are independently selected from aryl group or heterocyclic aryl group containing one or more substituents.

Abstract: The invention provides a light-emission material comprising a compound having Formula (I): , wherein each of A independently is: each of Rm independently is H, alkyl, alkenyl, alkynyl, CN, CF3, alkylamino, amino, alkoxy, halo, aryl, or heteroaryl.

Abstract: The present invention discloses conjugated compounds containing heteroatom-centered arylsilane derivatives and their applications as host materials, electron transport materials, or hole transport materials in an organic electroluminescent device. The general structure of the conjugated compounds containing heteroatom-centered arylsilane derivatives is as follows: where X1, X2, X3, and X4 can be identical or different and X1, X2, X3, and X4 are independently selected from the group consisting of the following: H, B, N, P?O, Si—R9; and R1, R2, R3, R4, R5, R6, R7, R8, and R9 can be identical or different and R1, R2, R3, R4, R5, R6, R7, R8, and R9 are independently selected from aryl group or heterocyclic aryl group containing one or more substituents.

Abstract: The present invention discloses triptycene derivatives and their application as a host emitting material, an electron transport material, or a hole transport material in an organic electronic device.