Patents by Inventor Hsiu-Chun Hsieh

Hsiu-Chun Hsieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7023131
    Abstract: An active matrix organic light emitting display and a method of forming the same. The AM-OLED including a substrate with a plurality of thin film transistors serving as driver circuits, a dielectric layer formed conformally on the substrate and the thin film transistors, a first insulating layer formed on parts of the dielectric layer to define the exposed surface of the dielectric layer as a predetermined transparent electrode area, a transparent electrode formed conformally on the predetermined transparent electrode area, a second insulating layer formed on both sides of the transparent electrode to expose parts of surface of the transparent electrode, an organic electroluminescent layer formed on the transparent electrode, and a metal electrode formed on the organic electroluminescent layer. The insulating layer smoothes the transparent electrode surface enhancing the luminescent characteristics of the AM-OLED.
    Type: Grant
    Filed: January 20, 2004
    Date of Patent: April 4, 2006
    Assignee: Toppoly Optoelectronics Corp.
    Inventors: Shih-Chang Chang, Hsiu-Chun Hsieh, Yaw-Ming Tsai
  • Patent number: 7009204
    Abstract: A thin film transistor for use in an active matrix liquid crystal display includes a substrate, a source and a drain regions, and at least a gate electrode. The substrate includes therein a plurality of intrinsic regions, at least one first doped region and two second doped regions. The first doped region is disposed between the plurality of intrinsic regions. The plurality of intrinsic regions are linked together to form a connection structure via the first doped region, and the two second doped regions are disposed at both ends of the connection structure, respectively. The source and the drain regions are coupled to the two second doped regions disposed at both ends of the connection structure, respectively. The gate electrode is disposed over the plurality of intrinsic regions, such that the periphery of each of the plurality of intrinsic regions and the periphery of a corresponding gate electrode are substantially aligned with each other.
    Type: Grant
    Filed: June 16, 2004
    Date of Patent: March 7, 2006
    Assignee: Toppoly Optoelectronics Corp.
    Inventors: Yaw-Ming Tsai, Hsiu-Chun Hsieh, Shih-Chang Chang, Chen-Ting Huang, I-Wei Wu
  • Publication number: 20050253506
    Abstract: A light-emitting device and the fabrication method thereof. A substrate is provided. A plurality of active elements are formed on the substrate, defining a plurality of pixel areas. A color filter is formed on the pixel areas. The surface of the color filter is planarized to reduce roughness. An electrode is formed on the color filter. An light-emitting layer is formed on the electrode. A second electrode is formed on the light-emitting layer.
    Type: Application
    Filed: November 22, 2004
    Publication date: November 17, 2005
    Inventors: Yaw-Ming Tsai, Hsiu-Chun Hsieh, Shih-Chang Chang
  • Publication number: 20050158981
    Abstract: First, a substrate with at least one thin film transistor is provided. A protection layer and a planarization layer are sequentially formed on the substrate. Then, the planarization layer is patterned and an opening is formed in the planarization above the thin film transistor. An etching process is performed by using the planarization layer as a hard mask to form a first contact hole, which is extending through to the thin film transistor, in the protection layer. Then, the planarization layer surrounding the opening is partially removed to form a second contact hole in the planarization layer above the first contact hole. After that, a transparent conductive layer is formed on the surface of the planarization layer, the second contact hole, the first contact hole, partial contact plug and electrically connected to the thin film transistor via the first contact hole and the second contact hole.
    Type: Application
    Filed: June 25, 2004
    Publication date: July 21, 2005
    Inventors: Shih-Chang Chang, Hsiu-Chun Hsieh, Yaw-Ming Tsai
  • Publication number: 20050056838
    Abstract: A thin film transistor for use in an active matrix liquid crystal display includes a substrate, a source and a drain regions, and at least a gate electrode. The substrate includes therein a plurality of intrinsic regions, at least one first doped region and two second doped regions. The first doped region is disposed between the plurality of intrinsic regions. The plurality of intrinsic regions are linked together to form a connection structure via the first doped region, and the two second doped regions are disposed at both ends of the connection structure, respectively. The source and the drain regions are coupled to the two second doped regions disposed at both ends of the connection structure, respectively. The gate electrode is disposed over the plurality of intrinsic regions, such that the periphery of each of the plurality of intrinsic regions and the periphery of a corresponding gate electrode are substantially aligned with each other.
    Type: Application
    Filed: June 16, 2004
    Publication date: March 17, 2005
    Inventors: Yaw-Ming Tsai, Hsiu-Chun Hsieh, Shih-Chang Chang, Chen-Ting Huang, I-Wei Wu
  • Publication number: 20040169460
    Abstract: An active matrix organic light emitting display and a method of forming the same. The AM-OLED including a substrate with a plurality of thin film transistors serving as driver circuits, a dielectric layer formed conformally on the substrate and the thin film. transistors, a first insulating layer formed on parts of the dielectric layer to define the exposed surface of the dielectric layer as a predetermined transparent electrode area, a transparent electrode formed conformally on the predetermined transparent electrode area, a second insulating layer formed on both sides of the transparent electrode to expose parts of surface of the transparent electrode, an organic electroluminescent layer formed on the transparent electrode, and a metal electrode formed on the organic electroluminescent layer. The insulating layer smoothes the transparent electrode surface enhancing the luminescent characteristics of the AM-OLED.
    Type: Application
    Filed: January 20, 2004
    Publication date: September 2, 2004
    Inventors: Shih-Chang Chang, Hsiu-Chun Hsieh, Yaw-Ming Tsai