Abstract: A collar structure for animal leashes includes a lead having a hoop disposed at one end thereof for a ring to be attached thereto, and a clamping piece made up of a clamping plate protruding upwards at the top side of a fixing body and supported by a spring element wherein the clamping plate of the clamping piece is pushed downwards to align a pair of symmetrical left and right clamping holes disposed thereon with a pair of matching left and right fixing holes of the fixing body thereof, and a free end disposed at the other side of the lead thereof is sequentially guided through the left fixing hole and the left clamping hole thereof before extending further to wind around the other side of the ring thereof and bend backwards to pass through the right fixing hole and the right clamping hole thereof respectively so as to form a U-shaped adjustable section and a movable collar to fit an animal's neck.

Abstract: The present invention provides a complementary metal-oxide-semiconductor (CMOS) image sensor structure and the potential reading method employing the same. The integration area composed of the photo diode and the photo gate is applied to receive the light emitted from the light source. The sensitivity is changed via the operation of controlling the gate voltage of the photo gate. Moreover, the variance of the potential is read many times. The characteristic of the potentials under different conditions in different times having the same dark current and fixed pattern noise is utilized. The dark current and the fixed pattern noise can be eliminated by calculating their difference. Higher sensitivity in low illumination and lower sensitivity in high illumination can be obtained by calculating their summation, so as to increase the dynamic range.

Abstract: A complementary metal-oxide-semiconductor image sensor structure and associated layout method. A gate polysilicon layer of a reset transistor isolates the illumination region of an optical diode from field oxide layer corners of the image sensor so that current leaks between the illumination region and field oxide layer corners are minimized. Each side of the polysilicon layer also extends to and connects with a neighboring polysilicon layer. This expands the illumination region and increases fill factor of the layout.