Abstract: A method of fabricating a MOSFET with an undoped channel is disclosed. The method comprises fabricating on a substrate a semiconductor structure having a dummy poly gate, dummy interlayer (IL) oxide, and a doped channel. The method further comprises removing the dummy poly gate and the dummy IL oxide to expose the doped channel, removing the doped channel from an area on the substrate, forming an undoped channel for the semiconductor structure at the area on the substrate, and forming a metal gate for the semiconductor structure. Removing the dummy poly gate may comprise dry and wet etch operations. Removing the dummy IL oxide may comprise dry etch operations. Removing the doped channel may comprise anisotropic etch operations on the substrate. Forming an undoped channel may comprise applying an epitaxial process to grow the undoped channel. The method may further comprise growing IL oxide above the undoped channel.

Abstract: A transistor includes a gate terminal, a source terminal and a drain terminal. At least one of the source and drain terminals has a layered configuration that includes a terminal layer and an intervening layer. The terminal layer has a top surface and a bottom surface. The intervening layer is located within the terminal layer, between and spaced from the top and bottom surfaces, is oriented to be perpendicular to current flow, and is less than one tenth the thickness of the terminal layer. The terminal layer and the intervening layer include a common semiconductive compound and a common dopant, with a concentration of the dopant in the intervening layer being over ten times an average concentration of the dopant in the terminal layer.

Abstract: The invention discloses a system and method for estimating a three-dimensional (3D) packaging size of an object. The method has a self calibration function to correct the scale in the measurement environment so as to reduce errors caused by human operations. The system comprises an image capture unit for capturing images of the measurement environment and objects; a scale correction unit for performing the calibration using a reference object of a known size; and an object size estimation unit for detecting the position of an object to be estimated in the image data received from the image capture unit and estimating the 3D size of the object according to the calibrated scale.

Abstract: A method for forming a semiconductor device having a fin-type channel is provided. The method may include the following operations: forming a first buffer layer over a substrate; forming a first dielectric layer over the first buffer layer; patterning the first dielectric layer over the first buffer layer; forming a barrier layer over the first buffer layer; forming a second dielectric layer over the barrier layer; patterning the second dielectric layer over the barrier layer; forming a channel layer over the barrier layer; and patterning the second dielectric layer, such that at least a portion of the channel layer protrudes to form the fin-type channel.

Abstract: A device structure includes: a core structure formed on a support, and a shell material formed on the core structure and surrounding at least part of the core structure. The shell material and the core structure are configured to form a quantum-well channel in the shell material.

Abstract: The present invention discloses a successive approximation analog-to-digital converter, comprising: a capacitor array including a designated capacitor and several sampling capacitors to sample an input signal under a sampling mode; a comparator to compare a first voltage from the capacitor array with a second voltage under a comparison mode and thereby generate a comparison result; a switching circuit to determine the charge amount stored in the capacitor array under the sampling mode and the first voltage under the comparison mode according to a control signal; and a control circuit to generate the control signal according to a sampling setting under the sampling mode and generate the control signal according to the comparison result under the comparison mode. Said designated capacitor does no sampling under the sampling mode, but appropriates the charges of the sampling capacitors under the comparison mode, so as to reduce the effective sampling value.

Abstract: A nanowire field effect transistor (FET) device and method for forming the same is disclosed. The device comprises: a semiconductor substrate; a device layer including a source region and a drain region connected by a suspended nanowire channel; and etch stop layers respectively arranged beneath the source region and the drain region, the etch stop layers forming support structures interposed between the semiconductor substrate and the source and drain regions. The suspended nanowire channel is formed by etching a sacrificial material disposed beneath the suspended nanowire channel and between the etch stop layers. The etching is selective to the sacrificial material to prevent the removal of the etch stop layers beneath the source region and the drain region.

Abstract: A terminal lead frame comprises a frame and a plurality of terminal pairs set in the frame. The frame is a first dielectric material. The terminal pairs include a first terminal and a second terminal. The first terminal and the second terminal include a first and second extensions extending into the frame along with a first path and a second path, respectively. The first path is longer than the second path, wherein the first extension contacts with a second material to form a first area of contact while the second extension has a second area of contact with respect to the second dielectric material. The first area of contact is larger than the second area of contact.

Abstract: A metal-insulation-metal (MIM) device including a first metal layer, a first insulation layer, a second metal layer, and a second insulation layer is provided. The first insulation layer is disposed on the first metal layer. The second metal layer is disposed on a part of the first insulation layer. The second insulation layer is disposed on a side wall of the second metal layer and on another part of the first insulation layer. A width of the first insulation layer under the second metal layer and the second insulation layer parallel to the first metal layer is greater than a with of the second metal layer parallel to the first metal layer.

Abstract: An air maintenance tire and pump assembly includes a pair of inline valves are positioned on respective opposite sides of an in-tire air passageway inlet junction and a pair of outlet valves positioned at a downstream side of a respective inline valve. A bypass valve is further provided extending between the downstream valve sides of the inline valves, the bypass valve operative to open and bypass the flow of inlet air through the outlet valves to the tire cavity in the event that a tire cavity pressure is greater than a preset pressure level and close when a tire cavity pressure is less than the preset pressure level.

Abstract: According to an exemplary embodiment, a method of forming a fin structure is provided. The method includes the following operations: etching a first dielectric layer to form at least one recess and a first core portion of a fin core; form an oxide layer as a shallow trench isolation layer in the recess; etching back the oxide layer to expose a portion of the fin core; and forming a fin shell to cover a sidewall of the exposed portion of the fin core.

Abstract: The present invention discloses a successive approximation analog-to-digital converter, comprising: a capacitor array including a designated capacitor and several sampling capacitors to sample an input signal under a sampling mode; a comparator to compare a first voltage from the capacitor array with a second voltage under a comparison mode and thereby generate a comparison result; a switching circuit to determine the charge amount stored in the capacitor array under the sampling mode and the first voltage under the comparison mode according to a control signal; and a control circuit to generate the control signal according to a sampling setting under the sampling mode and generate the control signal according to the comparison result under the comparison mode. Said designated capacitor does no sampling under the sampling mode, but appropriates the charges of the sampling capacitors under the comparison mode, so as to reduce the effective sampling value.

Abstract: A quantification tube, capable of achieving concentration quantification by means of centrifugal force. The concentrated quantification centrifugal tube includes a tube cover, a tube body, and a small volume trapezoid-column-shape tube body. The tube body is connected to the small volume trapezoid-column-shape tube body. The tube body can be filled with liquid substance, and the small volume trapezoid-column-shape tube body at the bottom portion is a concentration area, while the tube cover has the function of tight seal. After the tube is filled with liquid substance, and through actions of centrifugal force, the material in the liquid substance can be centrifuged into small volume trapezoid-column-shape tube body at the bottom of the tube body. Due to the design of trapezoid-column-shape tube body at the bottom of the tube body, the concentration ratio of the concentrated quantification centrifugal tube can be varied from 1 to infinite.

Abstract: Method and devices for testing a headphone with increased sensation are provided. The headphone can filter and amplify low frequency audio signals, which are then sent to a haptic device in the headphone. The haptic device can cause bass sensations at the top of the skull and at both ear cups. The testing system can evaluate the haptic and acoustic sensations produced by the headphone to evaluate if they have been properly assembled and calibrate the headphones if necessary.

Abstract: Method and devices for processing signals based on sound and haptic profiles are provided. A reproduction device can request a sound profile or haptic profile based on user information, device information, media metadata or a combination. The sound or haptic profiles can be customized and shared across multiple devices. User interfaces allow for the input of information that allows the reproduction device or a server in the cloud to select, modify, store, and analyze sound profiles. Deeper analysis allows for the improvement of sound and haptic profiles for individuals and groups. Intensity scoring of a music library can also be conducted.

Abstract: Method and devices for processing audio signals based on sound profiles are provided. A reproduction device can request a sound profile based on user information, device information, media metadata or a combination. The sound profiles can be customized and shared across multiple devices. User interfaces allow for the input of information that allows the reproduction device or a server in the cloud to select, modify, store, and analyze sound profiles. Deeper analysis allows for the improvement of sound profiles for individuals and groups. Intensity scoring of a music library can also be conducted.

Abstract: Method and devices for processing audio signals based on intensity of an audio file are provided. A user interface is provided that allows for the intuitive navigation of audio files based on their intensity. A screen of the user interface is displayed, containing a plurality of selection regions. One or more selection regions display a selection option in the selection region to select a group of audio files associated with a similar intensity score. An intensity score of an audio file can be manually changed or assigned by a microprocessor.

Abstract: A light vibration touch apparatus comprises a guide light plate, at least a light sensitive unit, at least an optical signal emitting unit, a microprocessor, and an optical signal processor; the optical signal emitting unit emits light signal to propagate in the guide light plate; the stability of the signal influenced with vibration caused by the guide light plate being touched is utilized; the optical signal processor outputs vibration signals corresponding to a touch point; the microprocessor detects the vibration signals sequentially output by the optical signal processor in a period to obtain position information of the touch point in accordance with timings of at least two of the vibration signals appearing in the period and output a corresponding touch signal.