Patents by Inventor Hsiung-Shih CHANG
Hsiung-Shih CHANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9391139Abstract: A top-side contact structure is provided. The top-side contact structure includes a substrate. The substrate includes a first semiconductor layer, an insulating layer on the first semiconductor layer, and a second semiconductor layer on the insulating layer. The top-side contact structure also includes a first trench and a second trench formed in the second semiconductor layer and respectively extending along a first direction and a second direction. The first trench and the second trench connect to each other at an intersection point. The top-side contact structure also includes an insulating material filling the first trench and the second trench. The top-side contact structure also includes a contact plug formed at the intersection point and directly contacting the first semiconductor layer. A method for fabricating a top-side contact structure is also provided.Type: GrantFiled: September 23, 2015Date of Patent: July 12, 2016Assignee: Vanguard International Semiconductor CorporationInventors: Hsiung-Shih Chang, Jui-Chun Chang, Li-Che Chen
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Publication number: 20160197019Abstract: A semiconductor device includes: a plurality of stacked semiconductor layers; a plurality of composite doped regions separately and parallelly disposed in a portion of the semiconductor layers along a first direction; a gate structure disposed over a portion of the semiconductor layers along a second direction, wherein the gate structure covers a portion of the composite doped regions; a first doped region formed in the most top semiconductor layer along the second direction and being adjacent to a first side of the gate structure; and a second doped region formed in the most top semiconductor layer along the second direction and being adjacent to a second side of the gate structure opposite to the first side thereof.Type: ApplicationFiled: March 16, 2016Publication date: July 7, 2016Applicant: Vanguard International Semiconductor CorporationInventors: Hsiung-Shih CHANG, Jui-Chun CHANG, Chih-Jen HUANG
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Patent number: 9324785Abstract: A semiconductor device includes: a plurality of stacked semiconductor layers; a plurality of composite doped regions separately and parallelly disposed in a portion of the semiconductor layers along a first direction; a gate structure disposed over a portion of the semiconductor layers along a second direction, wherein the gate structure covers a portion of the composite doped regions; a first doped region formed in the most top semiconductor layer along the second direction and being adjacent to a first side of the gate structure; and a second doped region formed in the most top semiconductor layer along the second direction and being adjacent to a second side of the gate structure opposite to the first side thereof.Type: GrantFiled: April 10, 2014Date of Patent: April 26, 2016Assignee: Vanguard International Semiconductor CorporationInventors: Hsiung-Shih Chang, Jui-Chun Chang, Chih-Jen Huang
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Patent number: 9324786Abstract: A semiconductor device includes a semiconductor layer, a plurality of first doped regions, a gate structure, and second and third doped regions. The semiconductor layer has a first conductivity type. The first doped regions are in parallel disposed in a portion of the semiconductor layer along a first direction and have a second conductivity type and a rectangular top view. The gate structure is disposed over a portion of the semiconductor layer along a second direction, covering a portion of the first doped regions. The second doped region is disposed in the semiconductor layer along the second direction, being adjacent to a first side of the gate structure and having the second conductivity type. The third doped region is formed in the semiconductor layer along the second direction, being adjacent to a second side of the gate structure opposing the first side and having the second conductivity type.Type: GrantFiled: April 11, 2014Date of Patent: April 26, 2016Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATIONInventors: Hsiung-Shih Chang, Jui-Chun Chang, Tsung-Hsiung Lee
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Patent number: 9263436Abstract: A semiconductor device includes: a semiconductor layer; a first doped well region disposed in a portion of the semiconductor layer; a first doped region disposed in the first doped well region; a second doped well region of an asymmetrical cross-sectional profile disposed in another portion of the semiconductor layer; second, third, and fourth doped regions formed in the second doped well region; a first gate structure disposed over a portion of the semiconductor layer, practically covering the second doped well region; and a second gate structure embedded in a portion of the semiconductor layer, penetrating a portion of the second doped well region.Type: GrantFiled: April 30, 2014Date of Patent: February 16, 2016Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATIONInventors: Hsiung-Shih Chang, Jui-Chun Chang, Shang-Hui Tu, Priyono Tri Sulistyanto, Chia-Hao Lee
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Publication number: 20150318277Abstract: A semiconductor device includes: a semiconductor layer; a first doped well region disposed in a portion of the semiconductor layer; a first doped region disposed in the first doped well region; a second doped well region of an asymmetrical cross-sectional profile disposed in another portion of the semiconductor layer; second, third, and fourth doped regions formed in the second doped well region; a first gate structure disposed over a portion of the semiconductor layer, practically covering the second doped well region; and a second gate structure embedded in a portion of the semiconductor layer, penetrating a portion of the second doped well region.Type: ApplicationFiled: April 30, 2014Publication date: November 5, 2015Applicant: Vanguard International Semiconductor CorporationInventors: Hsiung-Shih CHANG, Jui-Chun CHANG, Shang-Hui TU, Priyono Tri Sulistyanto, Chia-Hao LEE
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Publication number: 20150295024Abstract: A semiconductor device is disclosed. The device includes an epitaxial layer on a substrate, wherein the epitaxial layer includes first trenches and second trenches alternately arranged along a first direction. The epitaxial layer between the adjacent first and second trenches includes a first doping region and a second doping region, and the first doping region and the second doping region have different conductivity types. An interface is between the first doping region and the second doping region to form a super-junction structure. A gate structure is on the epitaxial layer. The epitaxial layer under the gate structure includes a channel extending along a second direction, and the first direction is perpendicular to the second direction.Type: ApplicationFiled: April 9, 2014Publication date: October 15, 2015Applicant: Vanguard International Semiconductor CorporationInventors: Tsung-Hsiung LEE, Jui-Chun CHANG, Hsiung-Shih CHANG
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Publication number: 20150295026Abstract: A semiconductor device includes: a plurality of stacked semiconductor layers; a plurality of composite doped regions separately and parallelly disposed in a portion of the semiconductor layers along a first direction; a gate structure disposed over a portion of the semiconductor layers along a second direction, wherein the gate structure covers a portion of the composite doped regions; a first doped region formed in the most top semiconductor layer along the second direction and being adjacent to a first side of the gate structure; and a second doped region formed in the most top semiconductor layer along the second direction and being adjacent to a second side of the gate structure opposite to the first side thereof.Type: ApplicationFiled: April 10, 2014Publication date: October 15, 2015Applicant: Vanguard International Semiconductor CorporationInventors: Hsiung-Shih CHANG, Jui-Chun CHANG, Chih-Jen HUANG
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Publication number: 20150295027Abstract: A semiconductor device includes a semiconductor layer, a plurality of first doped regions, a gate structure, and second and third doped regions. The semiconductor layer has a first conductivity type. The first doped regions are in parallel disposed in a portion of the semiconductor layer along a first direction and have a second conductivity type and a rectangular top view. The gate structure is disposed over a portion of the semiconductor layer along a second direction, covering a portion of the first doped regions. The second doped region is disposed in the semiconductor layer along the second direction, being adjacent to a first side of the gate structure and having the second conductivity type. The third doped region is formed in the semiconductor layer along the second direction, being adjacent to a second side of the gate structure opposing the first side and having the second conductivity type.Type: ApplicationFiled: April 11, 2014Publication date: October 15, 2015Applicant: Vanguard International Semiconductor CorporationInventors: Hsiung-Shih CHANG, Jui-Chun CHANG, Tsung-Hsiung LEE
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Patent number: 9048312Abstract: A semiconductor device including a substrate having an active region is disclosed. A field-plate region and a bulk region are in the active region, wherein the bulk region is at a first side of the field-plate region. At least one trench-gate structure is disposed in the substrate corresponding to the bulk region. At least one source-doped region is in the substrate corresponding to the bulk region, wherein the source-doped region surrounds the trench-gate structure. A drain-doped region is in the substrate at a second side opposite to the first side of the field-plate region, wherein an extending direction of length of the trench-gate structure is perpendicular to that of the drain-doped region as viewed from a top view perspective.Type: GrantFiled: September 12, 2013Date of Patent: June 2, 2015Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATIONInventors: Hsiung-Shih Chang, Jui-Chun Chang
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Publication number: 20150145026Abstract: A semiconductor device including a substrate having an active region and a field-plate region therein is disclosed. At least one trench-gate structure is in the substrate. The field-plate region is at a first side of the trench-gate structure. At least one source doped region is in the substrate at a second side opposite to the first side of the trench-gate structure. The source doped region adjoins the sidewall of the trench-gate structure. A drain doped region is in the substrate corresponding to the active region. The field-plate region is between the drain doped region and the trench-gate structure. An extending direction of length of the trench-gate structure is perpendicular to that of the drain doped region as viewed from a top-view perspective.Type: ApplicationFiled: November 25, 2013Publication date: May 28, 2015Applicant: Vanguard International Semiconductor CorporationInventors: Jui-Chun CHANG, Hsiung-Shih CHANG
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Publication number: 20150069503Abstract: A semiconductor device including a substrate having an active region is disclosed. A field-plate region and a bulk region are in the active region, wherein the bulk region is at a first side of the field-plate region. At least one trench-gate structure is disposed in the substrate corresponding to the bulk region. At least one source-doped region is in the substrate corresponding to the bulk region, wherein the source-doped region surrounds the trench-gate structure. A drain-doped region is in the substrate at a second side opposite to the first side of the field-plate region, wherein an extending direction of length of the trench-gate structure is perpendicular to that of the drain-doped region as viewed from a top view perspective.Type: ApplicationFiled: September 12, 2013Publication date: March 12, 2015Applicant: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATIONInventors: Hsiung-Shih CHANG, Jui-Chun CHANG