Abstract: A semiconductor structure includes a substrate, an isolation layer, a dielectric layer, an insulation layer, a conductor and a capping layer. The substrate has a concave portion. The isolation layer is located on a top surface of the substrate. The dielectric layer is located on the isolation layer. The insulation layer is located on a surface of the concave portion and extends to a sidewall of the isolation layer. The conductor is located on the insulation layer in the concave portion. The conductor has a first top surface and a second top surface, and the first top surface is closer to the dielectric layer than the second top surface. The capping layer is located in the concave portion and covers the conductor.

Abstract: A burn-in chamber is provided, configured to provide the required temperature for a device under test (DUT), including a side wall, a guiding plate, an air flow plate, a partition assembly, and a fan. The air flow plate has a ventilation structure, and the guiding plate is located between the side wall and the air flow plate. The partition assembly is disposed on both sides of the air flow plate. The partition assembly and the air flow plate together form an accommodating space for accommodating the DUT. The partition assembly forms a return channel with respect to the other side of the accommodating space with the side wall. When the fan is active, air from the accommodating space passes through the air flow plate and is guided to the return channel via the guiding plate, and air is returned to the accommodating space through the return channel.

Abstract: A projector includes an image converting module, a processing module and an imaging module. The image converting module receives an original image sequence with a first frame rate. The image converting module inserts a plurality of supplement images into the original image sequence per second to output a supplement image sequence with a second frame rate, wherein the second frame rate is larger than the first frame rate. The processing module is coupled to the image converting module. The processing module receives the supplement image sequence from the image converting module. The processing module ignores the supplement images and processes and outputs the original image sequence. The imaging module is coupled to the processing module. The imaging module receives the original image sequence from the processing module and outputs the original image sequence by the first frame rate.

Abstract: A power supply system for a vertical continuous electroplating frame, comprising: a power supply rail arranged on the vertical continuous electroplating device; and an electrode case, arranged a case body on the top surface of the electroplating frame, inside the case body having an electrode plate corresponding to the power supply rail, at the bottom of the electrode plate having an elastic unit, the top surface of the case body having a positioning groove corresponding to the electrode plate, when the electrode plate is electrical contacted with the power supply rail, the electroplating current is provided to the object to be plated through the electroplating frame.

Abstract: Devices and associated methods for analyzing patient samples are disclosed herein. In some embodiments, a device includes a housing base configured to retain a test strip, and a housing cover configured to couple to the housing base to at least partially enclose the test strip. The housing cover can include a fluid reservoir configured to hold a solution for hydrating a sample swab. The housing can further include an aperture configured to permit transfer of a sample from the sample swab onto the test strip.

Abstract: A counting method adapted to count the stage number of an integrated circuit is provided herein. The counting method includes selecting an initial segment on a graphical user interface; determining whether the initial segment is floating; when it is determined that the initial segment is coupled to a first device, storing the first device in a device register; increasing the stage number by 1 to be a first stage number corresponding to the first device; storing all segments coupled to the first device except the initial segment in a first coupling register; selecting a first segment from the first coupling register; determining whether the first segment is floating; and when it is determined that the first segment is not floating, displaying the first stage number at the first segment on the graphical user interface.

Abstract: A method of fabricating a semiconductor device includes forming a first conductive structure over a substrate, successively forming a first spacer layer, a sacrificial layer, and a second spacer layer on the first conductive structure, forming a second conductive structure adjacent the first conductive structure and in contact with a lower portion of the second spacer layer, partially removing an upper portion of the second spacer layer to expose the sacrificial layer, removing the sacrificial layer through a vapor etch process to form an air gap between the lower portion of the second spacer layer and the first spacer layer, and forming a capping layer to cap the air gap.

Abstract: A manufacturing method for a recessed access device includes the following operations. A trenching is formed in a substrate. A gate oxide layer is formed within the substrate by oxidizing an inner surface of the trench. A first gate layer is formed in a bottom of the trench, wherein a portion of the gate oxide layer above the first gate layer is exposed from the trench. A second gate layer is formed in the trench to cover the first gate layer and the portion of the gate oxide layer and form a recess over the first gate layer, wherein the second gate layer has a vertical portion covering the portion of the gate oxide layer and a horizontal portion having an upper surface exposed from the recess. An ion implantation is performed to the horizontal portion to form a doped horizontal portion.

Abstract: A projector includes an image converting module, a processing module and an imaging module. The image converting module receives an original image sequence with a first frame rate. The image converting module inserts a plurality of supplement images into the original image sequence per second to output a supplement image sequence with a second frame rate, wherein the second frame rate is larger than the first frame rate. The processing module is coupled to the image converting module. The processing module receives the supplement image sequence from the image converting module. The processing module ignores the supplement images and processes and outputs the original image sequence. The imaging module is coupled to the processing module. The imaging module receives the original image sequence from the processing module and outputs the original image sequence by the first frame rate.

Abstract: A storage device data management method compatible with different storage specifications is provided and applied to a computer device to provide a storage specification setting mode. The method includes: configuring a storage specification parameter data corresponding to a storage device according to a detected state of the storage device; and providing an unlocking routine when the storage device conforms with a security support and the storage device is locked. The method involves detecting a state of the storage device, configuring the storage specification parameter data, and determining whether the storage device conforms with the security support or is locked according to the storage specification parameter data, so as to provide the unlocking routine. Therefore, hard disk drives with different storage specifications can be configured in the storage specification setting mode to achieve enhanced ease of use, efficiency, and compatibility.

Abstract: A burn-in chamber is provided, configured to provide the required temperature for a device under test (DUT), including a side wall, a guiding plate, an air flow plate, a partition assembly, and a fan. The air flow plate has a ventilation structure, and the guiding plate is located between the side wall and the air flow plate. The partition assembly is disposed on both sides of the air flow plate. The partition assembly and the air flow plate together form an accommodating space for accommodating the DUT. The partition assembly forms a return channel with respect to the other side of the accommodating space with the side wall. When the fan is active, air from the accommodating space passes through the air flow plate and is guided to the return channel via the guiding plate, and air is returned to the accommodating space through the return channel.

Abstract: A semiconductor device includes a SOI substrate, first and second active elements, and an interconnect structure. The SOI substrate includes a semiconductor layer which includes first and second semiconductor blocks separated from each other by an isolation structure. The first and second active elements are disposed on the first and second semiconductor blocks respectively. A source/drain region of the first active element is electrically connected to a gate structure of the second active element through a first path provided by the interconnect structure. The second semiconductor block is electrically connected to the second semiconductor block through a second path provided by the interconnect structure. The second path includes a contact that is in contact with the upper surface of the second semiconductor block.

Abstract: A preassembled pipe coupling and method for joining pipe segments in an end-to-end relationship. The coupling (100) includes three identical housing segments (110) joined end to end. Each housing segment (110) includes a pipe engagement surface defining a radius of curvature. The radii of curvature of the three housing segments (110) are identical. The third housing segment is connected to the first and second housing segments to define a first configuration and a second configuration of the coupling, in which the radii of curvatures are the same in the first and second configurations. In the first configuration, the three housing segments (110) are radially located about an annular gasket (400) to permit insertion of the pipe segment into the gasket (400). In the second configuration, the three housing segments are radially located about the annular gasket such that the gasket is compressed to form a fluid tight seal and the pipe engagement surfaces engage the outer surface of the pipe segment.

Abstract: A method for etching an organic carbon based layer below a silicon containing hardmask is provided. An etch gas is provided comprising oxygen and a halogen containing component, and a passivation component, wherein a ratio by volume of total flow rate of the etch gas to flow rate of the halogen containing component is between 10,000:1 to 10:1. The etch gas is formed into a plasma, wherein the organic carbon based layer and the silicon contain hardmask are exposed to the plasma and wherein the plasma selectively etches the organic carbon based layer with respect to the silicon containing hardmask.

Abstract: A sensing device includes a housing positioned on an outer surface of a wire and a circuit board received in the housing. The circuit board has a sensing area for sensing the wire, such that the measurements obtained by the circuit board are relative values. Therefore, the circuit design of the circuit board can be simplified, and the size of the sensing device can be reduced.

Abstract: A sensing device includes a housing positioned on an outer surface of a wire and a circuit board received in the housing. The circuit board has a sensing area for sensing the wire, such that the measurements obtained by the circuit board are relative values. Therefore, the circuit design of the circuit board can be simplified, and the size of the sensing device can be reduced.

Abstract: An internal hot gas bypass device coupled with inlet guide vane for centrifugal compressor includes an inlet guide vane assembly, a driving motor assembly and a gas bypass valve assembly. The inlet guide vane assembly further includes a master vane, a plurality of slave vanes, a vane-front fixing ring, a vane-rear fixing ring, a vane-driving ring, a connecting pipe and a vane-opening indicating disk. The driving motor assembly further includes a motor, a driving unit and a motor fixing base. The gas bypass valve assembly further includes a valve, an external fixing-and-guiding ring, an internal fixing-and-guiding ring, a driven element, a spring, a sealing ring, a valve stud and a valve base. The driving motor assembly is connected with the driving unit and the master vane of the inlet guide vane assembly via a connecting rod, and is further connected with the slave vanes of the gas bypass valve assembly.

Abstract: The present invention provides a human tissue radiation protector with auxiliary method of radiotherapy, wherein said human tissue radiation protector comprises an interconnected expander, a syringe and a marker set onto the expander; said marker is made of radiopaque materials, which could assist the expander in positioning; as well as multiple radiation dosage detector capable of measurement the radiation dosage at different positions of the expander; said method allows to place the expander of the human tissue radiation protector between the tumor and nearby human tissues or organs so as to separate them, and assist the expander in positioning via the marker and measurement the radiation dosage via the radiation dosage detector.