Patents by Inventor Hsu-Ting Huang
Hsu-Ting Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11093683Abstract: Systems and methods are provided for generating test patterns. In various embodiments, systems and methods are provided in which machine learning is utilized to generate the test patterns in a manner so that the test patterns conform with design rule check (DRC) specified for a particular semiconductor manufacturing process or for particular types of devices. A test pattern generation system includes test pattern generation circuitry which receives a noise image. The test pattern generation generates a pattern image based on the noise image, and further generates a test pattern based on the pattern image. The test pattern is representative of geometric shapes of an electronic device design layout that is free of design rule check violations.Type: GrantFiled: September 3, 2019Date of Patent: August 17, 2021Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Fu-An Tien, Hsu-Ting Huang, Ru-Gun Liu
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Patent number: 11092899Abstract: A method for manufacturing a lithographic mask for an integrated circuit includes performing an optical proximity correction (OPC) process to an integrated circuit mask layout to produce a corrected mask layout. The method further includes performing an inverse lithographic technology (ILT) process to the corrected mask layout to enhance the corrected mask layout to produce an OPC-ILT-enhanced mask layout. The method also includes performing an inverse lithographic technology (ILT) process to the corrected mask layout to enhance the corrected mask layout to produce an OPC-ILT-enhanced mask layout.Type: GrantFiled: November 27, 2019Date of Patent: August 17, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Hsu-Ting Huang, Tung-Chin Wu, Shih-Hsiang Lo, Chih-Ming Lai, Jue-Chin Yu, Ru-Gun Liu, Chin-Hsiang Lin
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Patent number: 11080458Abstract: In a method of optimizing a lithography model in a lithography simulation, a mask is formed in accordance with a given layout, a wafer is printed using the mask, a pattern formed on the printed wafer is measured, a wafer pattern is simulated using a wafer edge bias table and the given mask layout, a difference between the simulated wafer pattern and the measured pattern is obtained, and the wafer edge table is adjusted according to the difference.Type: GrantFiled: September 26, 2019Date of Patent: August 3, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Fu An Tien, Hsu-Ting Huang, Ru-Gun Liu, Shih-Hsiang Lo
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Patent number: 11061318Abstract: Provided is a method for fabricating a semiconductor device including generating an ideal image using measured contour data and fitted conventional model terms. The method further includes using the fitted conventional model terms and a mask layout to provide a conventional model aerial image. In some embodiments, the method further includes generating a plurality of mask raster images using the mask layout, where the plurality of mask raster images is generated for each measurement site of the measured contour data. In various embodiments, the method also include training a neural network to mimic the ideal image, where the generated ideal image provides a target output of the neural network, and where the conventional model aerial image and the plurality of mask raster images provide inputs to the neural network.Type: GrantFiled: January 21, 2020Date of Patent: July 13, 2021Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Shih-Hsiang Lo, Hsu-Ting Huang, Ru-Gun Liu
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Publication number: 20210191254Abstract: A method for mask data synthesis and mask making includes calibrating an optical proximity correction (OPC) model by adjusting a plurality of parameters including a first parameter and a second parameter, wherein the first parameter indicates a long-range effect caused by an electron-beam lithography tool for making a mask used to manufacture a structure, and the second parameter indicates a geometric feature of a structure or a manufacturing process to make the structure, generating a device layout, calculating a first grid pattern density map of the device layout, generating a long-range correction map, at least based on the calibrated OPC model and the first grid pattern density map of the device layout, and performing an OPC to generate a corrected mask layout, at least based on the generated long-range correction map and the calibrated OPC model.Type: ApplicationFiled: March 8, 2021Publication date: June 24, 2021Inventors: Hsu-Ting HUANG, Shih-Hsiang LO, Ru-Gun LIU
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Publication number: 20210103211Abstract: A method for manufacturing a photo mask for a semiconductor device includes receiving a plurality of hotspot regions of a mask layout corresponding to the semiconductor device. The method further includes classifying the plurality of hotspot regions into two or more hotspot groups such that same or similar hotspot regions are classified into same hotspot groups. The hotspot groups includes a first hotspot group that has at least two hotspot regions. The method also includes correcting a first hotspot region of the first hotspot group to generate an enhancement of the first hotspot region and correcting other hotspot regions of the first hotspot group using the enhancement of the first hotspot region to generate enhancements of other hotspot regions of the first hotspot group.Type: ApplicationFiled: December 14, 2020Publication date: April 8, 2021Inventors: Fu An TIEN, Hsu-Ting HUANG, Ru-Gun LIU
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Publication number: 20210096475Abstract: A method of manufacturing a semiconductor device includes dividing a number of dies along an x axis in a die matrix in each exposure field in an exposure field matrix delineated on the semiconductor substrate, wherein the x axis is parallel to one edge of a smallest rectangle enclosing the exposure field matrix. A number of dies is divided along a y axis in the die matrix, wherein the y axis is perpendicular to the x axis. Sequences SNx0, SNx1, SNx, SNxr, SNy0, SNy1, SNy, and SNyr are formed. p*(Nbx+1)?2 stepping operations are performed in a third direction and first sequence exposure/stepping/exposure operations and second sequence exposure/stepping/exposure operations are performed alternately between any two adjacent stepping operations as well as before a first stepping operation and after a last stepping operation. A distance of each stepping operation in order follows the sequence SNx.Type: ApplicationFiled: December 14, 2020Publication date: April 1, 2021Inventors: Shinn-Sheng YU, Ru-Gun LIU, Hsu-Ting HUANG, Kenji YAMAZOE, Minfeng CHEN, Shuo-Yen CHOU, Chin-Hsiang LIN
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Patent number: 10962875Abstract: An integrated circuit (IC) method is provided. The method includes building a mask model to simulate an aerial mask image of a mask, and a compound lithography computational (CLC) model to simulate a wafer pattern; calibrating the mask model using a measured aerial mask image of the mask; calibrating the CLC model using measured wafer data and the calibrated mask model; performing an optical proximity correction (OPC) process to a mask pattern using the calibrated CLC model, thereby generating a corrected mask pattern for mask fabrication. Alternatively, the method includes measuring a mask image of a mask optically projected on a wafer with an instrument; calibrating a mask model using the measured mask image; calibrating a CLC model using measured wafer data and the calibrated mask model; and performing an OPC process to a mask pattern using the calibrated CLC model, thereby generating a corrected mask pattern for mask fabrication.Type: GrantFiled: December 2, 2019Date of Patent: March 30, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Hsu-Ting Huang, Chih-Shiang Chou, Ru-Gun Liu
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Patent number: 10942443Abstract: A method for mask data synthesis and mask making includes calibrating an optical proximity correction (OPC) model by adjusting a plurality of parameters including a first parameter and a second parameter, wherein the first parameter indicates a long-range effect caused by an electron-beam lithography tool for making a mask used to manufacture a structure, and the second parameter indicates a geometric feature of a structure or a manufacturing process to make the structure, generating a device layout, calculating a first grid pattern density map of the device layout, generating a long-range correction map, at least based on the calibrated OPC model and the first grid pattern density map of the device layout, and performing an OPC to generate a corrected mask layout, at least based on the generated long-range correction map and the calibrated OPC model.Type: GrantFiled: September 27, 2018Date of Patent: March 9, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Hsu-Ting Huang, Shih-Hsiang Lo, Ru-Gun Liu
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Patent number: 10867112Abstract: A method of making a mask includes computing a transmission cross coefficient (TCC) matrix for an optical system for performing a lithography process, wherein computing includes decomposing the transmission cross coefficient matrix into an ideal transmission cross coefficient (TCC) kernel set for a corresponding ideal optical system and at least one perturbation kernel set with coefficients corresponding to optical defects in the optical system, calibrating a lithography model by iteratively adjusting the lithography model based on a comparison between simulated wafer patterns and measured printed wafer patterns, and providing the calibrated lithography model, which includes an ideal TCC kernel set and the at least two perturbation kernels sets and a resist model, to a mask layout synthesis tool to obtain a synthesized mask layout corresponding to a target mask layout for manufacturing the mask using the synthesized mask layout.Type: GrantFiled: June 26, 2019Date of Patent: December 15, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Hsu-Ting Huang, Ru-Gun Liu, Shinn-Sheng Yu
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Patent number: 10866525Abstract: A method of manufacturing a semiconductor device includes dividing a number of dies along an x axis in a die matrix in each exposure field in an exposure field matrix delineated on the semiconductor substrate, wherein the x axis is parallel to one edge of a smallest rectangle enclosing the exposure field matrix. A number of dies is divided along a y axis in the die matrix, wherein the y axis is perpendicular to the x axis. Sequences SNx0, SNx1, SNx, SNxr, SNy0, SNy1, SNy, and SNyr are formed. p*(Nbx+1)?2 stepping operations are performed in a third direction and first sequence exposure/stepping/exposure operations and second sequence exposure/stepping/exposure operations are performed alternately between any two adjacent stepping operations as well as before a first stepping operation and after a last stepping operation. A distance of each stepping operation in order follows the sequence SNx.Type: GrantFiled: July 29, 2019Date of Patent: December 15, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Shinn-Sheng Yu, Ru-Gun Liu, Hsu-Ting Huang, Kenji Yamazoe, Minfeng Chen, Shuo-Yen Chou, Chin-Hsiang Lin
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Patent number: 10866506Abstract: A method for manufacturing a photo mask for a semiconductor device includes receiving a plurality of hotspot regions of a mask layout corresponding to the semiconductor device. The method further includes classifying the plurality of hotspot regions into two or more hotspot groups such that same or similar hotspot regions are classified into same hotspot groups. The hotspot groups includes a first hotspot group that has at least two hotspot regions. The method also includes correcting a first hotspot region of the first hotspot group to generate an enhancement of the first hotspot region and correcting other hotspot regions of the first hotspot group using the enhancement of the first hotspot region to generate enhancements of other hotspot regions of the first hotspot group.Type: GrantFiled: September 20, 2019Date of Patent: December 15, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Fu An Tien, Hsu-Ting Huang, Ru-Gun Liu
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Patent number: 10866505Abstract: Provided is a method for fabricating a semiconductor device including performing an OPC process to an IC layout pattern to generate a post-OPC layout pattern. In some embodiments, the method further includes applying an MPC model to the post-OPC layout pattern to generate a simulated mask pattern. By way of example, the simulated mask pattern is compared to a mask pattern calculated from a target wafer pattern. Thereafter, and based on the comparing, an outcome of an MPC process is determined.Type: GrantFiled: August 28, 2019Date of Patent: December 15, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Hsu-Ting Huang, Ru-Gun Liu
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Publication number: 20200278604Abstract: Provided is a method for fabricating a semiconductor device including generating an ideal image using measured contour data and fitted conventional model terms. The method further includes using the fitted conventional model terms and a mask layout to provide a conventional model aerial image. In some embodiments, the method further includes generating a plurality of mask raster images using the mask layout, where the plurality of mask raster images is generated for each measurement site of the measured contour data. In various embodiments, the method also include training a neural network to mimic the ideal image, where the generated ideal image provides a target output of the neural network, and where the conventional model aerial image and the plurality of mask raster images provide inputs to the neural network.Type: ApplicationFiled: January 21, 2020Publication date: September 3, 2020Inventors: Shih-Hsiang LO, Hsu-Ting HUANG, Ru-Gun LIU
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Publication number: 20200174380Abstract: A method for manufacturing a lithographic mask for an integrated circuit includes performing an optical proximity correction (OPC) process to an integrated circuit mask layout to produce a corrected mask layout. The method further includes performing an inverse lithographic technology (ILT) process to the corrected mask layout to enhance the corrected mask layout to produce an OPC-ILT-enhanced mask layout. The method also includes performing an inverse lithographic technology (ILT) process to the corrected mask layout to enhance the corrected mask layout to produce an OPC-ILT-enhanced mask layout.Type: ApplicationFiled: November 27, 2019Publication date: June 4, 2020Inventors: Hsu-Ting HUANG, Tung-Chin WU, Shih-Hsiang LO, Chih-Ming LAI, Jue-Chin YU, Ru-Gun LIU, Chin-Hsiang LIN
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Publication number: 20200134131Abstract: Systems and methods are provided for generating test patterns. In various embodiments, systems and methods are provided in which machine learning is utilized to generate the test patterns in a manner so that the test patterns conform with design rule check (DRC) specified for a particular semiconductor manufacturing process or for particular types of devices. A test pattern generation system includes test pattern generation circuitry which receives a noise image. The test pattern generation generates a pattern image based on the noise image, and further generates a test pattern based on the pattern image. The test pattern is representative of geometric shapes of an electronic device design layout that is free of design rule check violations.Type: ApplicationFiled: September 3, 2019Publication date: April 30, 2020Inventors: Fu-An Tien, Hsu-Ting Huang, Ru-Gun Liu
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Publication number: 20200133115Abstract: A method for manufacturing a photo mask for a semiconductor device includes receiving a plurality of hotspot regions of a mask layout corresponding to the semiconductor device. The method further includes classifying the plurality of hotspot regions into two or more hotspot groups such that same or similar hotspot regions are classified into same hotspot groups. The hotspot groups includes a first hotspot group that has at least two hotspot regions. The method also includes correcting a first hotspot region of the first hotspot group to generate an enhancement of the first hotspot region and correcting other hotspot regions of the first hotspot group using the enhancement of the first hotspot region to generate enhancements of other hotspot regions of the first hotspot group.Type: ApplicationFiled: September 20, 2019Publication date: April 30, 2020Inventors: Fu An TIEN, Hsu-Ting HUANG, Ru-Gun LIU
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Publication number: 20200133924Abstract: A computer-implemented method includes executing, using a computer, a process including a main thread that receives a layout file. The layout file includes a first plurality of tags and compressed information blocks. Each tag of the first plurality is associated with a compressed information block. The method further includes decompressing the compressed information blocks using sub-threads and thereby obtaining decompressed information blocks. The sub-threads are created by the main thread, and each sub-thread corresponds to a compressed information block. The decompressed information blocks are combined into decompressed layout information. The decompressed file is partitioned and each partition is provided to a node of a distributed computing system for performing layout correction.Type: ApplicationFiled: October 30, 2019Publication date: April 30, 2020Inventors: Fu An TIEN, Changsheng YING, Hsu-Ting HUANG, Ru-Gun LIU
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Publication number: 20200103747Abstract: An integrated circuit (IC) method is provided. The method includes building a mask model to simulate an aerial mask image of a mask, and a compound lithography computational (CLC) model to simulate a wafer pattern; calibrating the mask model using a measured aerial mask image of the mask; calibrating the CLC model using measured wafer data and the calibrated mask model; performing an optical proximity correction (OPC) process to a mask pattern using the calibrated CLC model, thereby generating a corrected mask pattern for mask fabrication. Alternatively, the method includes measuring a mask image of a mask optically projected on a wafer with an instrument; calibrating a mask model using the measured mask image; calibrating a CLC model using measured wafer data and the calibrated mask model; and performing an OPC process to a mask pattern using the calibrated CLC model, thereby generating a corrected mask pattern for mask fabrication.Type: ApplicationFiled: December 2, 2019Publication date: April 2, 2020Inventors: Hsu-Ting Huang, Chih-Shiang Chou, Ru-Gun Liu
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Publication number: 20200103764Abstract: In a method of optimizing a lithography model in a lithography simulation, a mask is formed in accordance with a given layout, a wafer is printed using the mask, a pattern formed on the printed wafer is measured, a wafer pattern is simulated using a wafer edge bias table and the given mask layout, a difference between the simulated wafer pattern and the measured pattern is obtained, and the wafer edge table is adjusted according to the difference.Type: ApplicationFiled: September 26, 2019Publication date: April 2, 2020Inventors: Fu An TIEN, Hsu-Ting HUANG, Ru-Gun LIU, Shih-Hsiang LO