Abstract: A method for forming a semiconductor device is provided. A dielectric layer is formed on a substrate. First and second gate trenches are formed in the dielectric layer. First and second spacers are disposed in the first and the second gate trenches, respectively. A patterned photoresist is formed on the dielectric layer. The patterned photoresist masks the first region and exposes the second region. Multiple cycles of spacer trimming process are performed to trim a sidewall profile of the second spacer. Each cycle comprises a step of oxygen stripping and a successive step of chemical oxide removal. The patterned photoresist is then removed to reveal the first region.

Abstract: A transient-voltage-suppression diode structure and a manufacturing method thereof are disclosed. The structure includes a substrate, an N? type epitaxial layer, a first metal layer, a first N+ type implant layer, a deep N+ type implant layer and plural polycrystalline plugs. The N? type epitaxial layer is disposed on the substrate. The first metal layer is disposed on the N? type epitaxial layer to form a working-voltage terminal. The first N+ type implant layer spatially corresponding to the working-voltage terminal and embedded in the N? type epitaxial layer is connected with the working-voltage terminal. The deep N+ type implant layer spatially corresponding to the working-voltage terminal and embedded in the N? type epitaxial layer is spaced apart from the first N+ type implant layer at a separation distance. The plural polycrystalline plugs are connected between the working-voltage terminal of the first metal layer and the deep N+ type implant layer.

Abstract: The invention relates to an electrochemical dephosphorylation technique for treating Alzheimer's disease and a use thereof. It comprises a gold electrode provided with a negative potential of ?0.2 V to ?0.6 V on a surface thereof.

Abstract: A transient-voltage-suppression diode structure and a manufacturing method thereof are disclosed. The structure includes a substrate, an N? type epitaxial layer, a first metal layer, a first N+ type implant layer, a deep N+ type implant layer and plural polycrystalline plugs. The N? type epitaxial layer is disposed on the substrate. The first metal layer is disposed on the N? type epitaxial layer to form a working-voltage terminal. The first N+ type implant layer spatially corresponding to the working-voltage terminal and embedded in the N? type epitaxial layer is connected with the working-voltage terminal. The deep N+ type implant layer spatially corresponding to the working-voltage terminal and embedded in the N? type epitaxial layer is spaced apart from the first N+ type implant layer at a separation distance. The plural polycrystalline plugs are connected between the working-voltage terminal of the first metal layer and the deep N+ type implant layer.

Abstract: A loop-like dual-antenna system is provided. The loop-like dual-antenna system includes a dielectric substrate having a first surface and a second surface opposite to each other. The loop radiating element includes a first radiating part with two ends and a second radiating part opposite to the first radiating part. A first signal source is disposed on the first surface of the dielectric substrate and electrically connected to two ends of the first radiating part. A grounding part is disposed on the second surface of the dielectric substrate and disposed on one side of the dielectric substrate away from the first signal source. A coupling matching element is disposed on the second surface of the dielectric substrate and adjacent to the grounding part, for coupling to and exciting the second radiating part. A second signal source, disposed on the second surface of the dielectric substrate, and electrically connected to the coupling matching element and the grounding part.

Abstract: The present disclosure provides a method for preparing an extract of Chrysanthemum morifolium with an effect of treating skin diseases, including: (a) performing an extraction procedure on Chrysanthemum morifolium with an extraction solvent to obtain an extract solution; and (b) adding at least one glycoside hydrolases to the extract solution to make an enzyme reaction occur to produce a precipitate, wherein the precipitate is the extract of Chrysanthemum morifolium with an effect of treating skin diseases.

Abstract: A 3D (three dimensional) model reconstruction method that includes the steps outlined below. Depth data of a target object corresponding to a current time spot is received. Camera pose data of the depth camera corresponding to the current time spot is received. Posed 3D point clouds corresponding to the current time spot are generated according to the depth data and the camera pose data. Posed estimated point clouds corresponding to the current time spot are generated according to the camera pose data corresponding to the current time spot and a previous 3D model corresponding to a previous time spot. A current 3D model of the target object is generated according to the posed 3D point clouds based on a difference between the posed 3D point clouds and the posed estimated point clouds.

Abstract: A pixel circuit includes a driving circuit, a lighting element, and multiple switching circuits. The driving circuit is configured to provide a driving current to a first node. A first terminal of the lighting element is coupled with a second node. A second terminal of the lighting element is configured to receive a system low voltage. The multiple switching circuits are coupled between the first node and the second node in a parallel connection, and configured to correspondingly receive multiple emission control signals and at least one grayscale control signal. During each frame, the multiple emission control signals provide multiple pulses, and the multiple pulses do not mutually overlapping in time sequence, so that the multiple switching circuits selectively couple the first node to the second node according to the multiple pulses and the at least one grayscale control signal.

Abstract: An antenna structure includes a housing, a first feed source, a ground portion, a radiator, and a second feed source. The housing includes a front frame, a backboard, and a side frame. The side frame defines a slot. The front frame defines a first gap, a second gap, and a groove. A radiating portion and a coupling portion are divided from the housing by the slot, the first gap, the second gap, and the groove. The first feed source is electrically connected to the radiating portion. One end of the ground portion is electrically connected to the radiating portion and another end of the ground portion is grounded. The radiator is coupled with and apart from the coupling portion. The second feed source is electrically connected to the radiator and a current from the second feed source is coupled to the coupling portion through the radiator.

Abstract: The present invention relates to systems and methods for reprogramming cells to generate neurons and identifying effective treatments for neurodegenerative disorders using such neurons, as well as systems and methods for treating and developing treatments for one or more neurodegenerative disorders.

Abstract: A system and method for estimating free space and assigning free space probabilities in point cloud data associated with an autonomous vehicle traveling on a surface, including taking into account sensor noise, sensor availability, obstacle heights, and distance of obstacles from the sensor. System and method can include determining surface planes and classifying point cloud points according to whether or not the points fall on surface planes, among other factors.

Abstract: A method for implementation by a laser spectrometer is provided. The method includes first scanning, by a control unit using a first set of laser spectrometer operating parameters, a first wavelength range by adjusting a wavelength of light of a beam emitted by a laser light source and passing through a sample gas. The first wavelength range encompasses a first spectral feature corresponding to a first constituent. The method also includes at least one second scanning, by the control unit using a second set of laser spectrometer operating parameters, a second wavelength range by adjusting the wavelength of light emitted from the laser light source and passing through the sample gas. The second wavelength range has a second spectral feature corresponding to at least one second constituent. The control unit also determines a first concentration of the first constituent and a second concentration of the at least one second constituent.

Abstract: A method of rounding fin-shaped structures includes the following steps. A substrate including fin-shaped structures, and pad oxide caps and pad nitride caps covering the fin-shaped structures from bottom to top are provided. An isolation structure fills between the fin-shaped structures. A removing process is performed to remove a top part of the isolation structure and expose top parts of the fin-shaped structures. An oxidation process is performed to oxidize sidewalls of the top parts of the fin-shaped structures, thereby forming oxidized parts covering sidewalls of the top parts of the fin-shaped structures. The pad nitride caps are removed. The pad oxide caps and the oxidized parts are removed at the same time, thereby forming rounding fin-shaped structures.

Abstract: A method for forming a semiconductor device is disclosed. A substrate having at least two fins thereon and an isolation trench between the at least two fins is provided. A liner layer is then deposited on the substrate. The liner layer conformally covers the two fins and interior surface of the isolation trench. A stress-buffer film is then deposited on the liner layer. The stress-buffer film completely fills a lower portion that is located at least below half of a trench depth of the isolation trench. A trench-fill oxide layer is then deposited to completely fill an upper portion of the isolation trench.

Abstract: A method for forming a semiconductor device is provided. A dielectric layer is formed on a substrate. First and second gate trenches are formed in the dielectric layer. First and second spacers are disposed in the first and the second gate trenches, respectively. A patterned photoresist is formed on the dielectric layer. The patterned photoresist masks the first region and exposes the second region. Multiple cycles of spacer trimming process are performed to trim a sidewall profile of the second spacer. Each cycle comprises a step of oxygen stripping and a successive step of chemical oxide removal. The patterned photoresist is then removed to reveal the first region.

Abstract: A pixel circuit includes a driving circuit, a lighting element, and multiple switching circuits. The driving circuit is configured to provide a driving current to a first node. A first terminal of the lighting element is coupled with a second node. A second terminal of the lighting element is configured to receive a system low voltage. The multiple switching circuits are coupled between the first node and the second node in a parallel connection, and configured to correspondingly receive multiple emission control signals and at least one grayscale control signal. During each frame, the multiple emission control signals provide multiple pulses, and the multiple pulses do not mutually overlapping in time sequence, so that the multiple switching circuits selectively couple the first node to the second node according to the multiple pulses and the at least one grayscale control signal.

Abstract: The invention relates to an electrochemical dephosphorylation technique for treating Alzheimer's disease and a use thereof. It comprises a gold electrode provided with a negative potential of ?0.2 V to ?0.6 V on a surface thereof.

Abstract: A method for fabricating semiconductor device includes the steps of: forming a trench in a substrate; forming a pad layer adjacent to two sides of trench; forming a dielectric layer to fill the trench; and performing a dry etching process to remove the pad layer and part of the dielectric layer to form a shallow trench isolation (STI). Preferably, the dry etching process comprises a non-plasma etching process.

Abstract: A method of rounding fin-shaped structures includes the following steps. A substrate including fin-shaped structures, and pad oxide caps and pad nitride caps covering the fin-shaped structures from bottom to top are provided. An isolation structure fills between the fin-shaped structures. A removing process is performed to remove a top part of the isolation structure and expose top parts of the fin-shaped structures. An oxidation process is performed to oxidize sidewalls of the top parts of the fin-shaped structures, thereby forming oxidized parts covering sidewalls of the top parts of the fin-shaped structures. The pad nitride caps are removed. The pad oxide caps and the oxidized parts are removed at the same time, thereby forming rounding fin-shaped structures.

Abstract: A fastener structure includes a body portion, a control portion and a fastening portion. The control portion is movably fitted to the body portion. The control portion has a head portion and a limiting portion. The fastening portion is movably disposed at the body portion. The limiting portion is adapted to limit the fastening portion. Therefore, the body portion is disposed at the second object, and the control portion causes the fastening portion to be coupled to or separated from the first object, so as to couple together and separate at least two objects repeatedly and rapidly.