Abstract: A projection apparatus and an illumination system are provided. The illumination system includes a light source emitting a light beam, at least one light-diffusion element disposed on a transmission path of the light beam from the light source and inclined to the transmission path of the light beam from the light source, a wavelength conversion module disposed on a transmission path of the light beam from the at least one light-diffusion element. A long axis direction of a light spot projected on the wavelength conversion module is perpendicular to an extending direction of a boundary between the reference plane and the at least one light-diffusion element. The wavelength conversion module is adapted to convert a first portion of the light beam from the light-diffusion element to a converted light beam. The converted light beam and a second portion of the light beam from the light-diffusion element form a illumination light.

Abstract: Hybrid connectors that may transfer power and data with a variety of electronic devices having different types of connector interfaces, may consume a minimal amount of surface area, depth, and volume in an electronic device, and may be readily manufactured.

Abstract: A cell culture device includes a culture unit, a gas supply unit, a first pressure unit, at least one inspecting unit and a control unit. The culture unit contains a cell culture liquid. The gas supply unit, connected with the culture unit, is used for transmitting a culture gas into the culture unit. The first pressure unit, connected with the culture unit, is used for applying a pressure to the cell culture liquid in the culture unit. The at least one inspecting unit, connected with the culture unit, is used for receiving the cell culture liquid for inspection. The control unit, electrically coupled with the culture unit, the first pressure unit, the gas supply unit and the at least one inspecting unit, is used for monitoring corresponding condition parameters to determine respective operations. In addition, a cell culture method for the cell culture device is also provided.

Abstract: A method for establishing cross-language information is disclosed. The method includes steps of collecting a plurality of set of object information from a plurality of network platforms; building a first data structure corresponding to a source language and a second data structure corresponding to a target language according to the plurality of sets of object information; classifying a plurality of sets of first object information in the first data structure into a plurality of source image groups according characteristics of the plurality of sets of first object information; classifying a plurality of sets of second object information in the second data structure into a plurality of target image groups according to characteristics of the plurality of sets of second object information; wherein each source image group includes a plurality of source hashtag groups, and each target image group includes a plurality of target hashtag groups.

Abstract: An image analyzing method of detecting a dimension of a region of interest inside an image is applied to an image analyzing device. The image analyzing method includes positioning an initial triggering pixel unit within a detective identifying area inside the image, and assigning a first detection region via a center of the initial triggering pixel unit, positioning a first based pixel unit conforming to a first target value inside the first detection region, applying a mask via a center of the first based pixel unit to determine whether a first triggering pixel unit exists inside the mask, and utilizing a determination result of the initial triggering pixel unit and the first triggering pixel unit to decide a maximal dimension of the region of interest.

Abstract: A thin film transistor substrate having a display region and a peripheral region, and the thin film transistor substrate includes a first substrate, scan lines, data lines, an insulating layer, first thin film transistors, at least one passivation layer and at least one gate driving circuit. The first substrate has an electrostatic protection area and a driving circuit area, and the electrostatic protection area and the driving circuit area are situated in the peripheral region. The scan lines, the data lines and the first thin film transistors are disposed in the display region. The insulating layer includes a gate insulator of the first thin film transistor, and the passivation layer is disposed on the insulating layer. The gate driving circuit is disposed in the driving circuit area. At least one of the passivation layer and the insulating layer are not disposed in the electrostatic protection area.

Abstract: A metering compensation method for effectively increasing visibility of an image is applied to a monitoring camera apparatus. The metering compensation method includes acquiring a histogram of the image, setting a convergent target value and a minimal mapping value, utilizing the convergent target value and the minimal mapping value to set a weighting function, transforming the histogram into a weighted histogram via the weighting function for acquiring an intensity mean of the weighted histogram, and utilizing the convergent target value and the intensity mean to generate a first exposure compensation value. The first exposure compensation value can be used for determining whether to adjust an exposure parameter of the monitoring camera apparatus.

Abstract: A tracking device including an image sensor, a light source and a processor is provided. The image sensor senses reflected light or scattered light formed by the light source illuminating a work surface. The processor calculates a trace of the tracking device according to one of the reflected light and the scattered light that generates more apparent image features so as to increase the adaptable work surfaces.

Abstract: A semiconductor device includes a semiconductor substrate, a buried layer disposed in the semiconductor substrate, and a first well region, a second well region, a third well region and a fourth well region disposed in the semiconductor substrate on the buried layer. The semiconductor device also includes a source region disposed in the second well region, a drain region disposed in the first well region, a gate structure disposed on the first well region and the second well region, and a deep trench isolation structure disposed in the semiconductor substrate and surrounding the source region and the drain region. The second well region surrounds the first well region. The third well region and the fourth well region are located on opposite sides of the second well region. The deep trench isolation structure penetrates through the buried layer.

Abstract: The disclosure discloses an optoelectronic element comprising: an optoelectronic unit comprising a first metal layer, a second metal layer, and an outermost lateral surface; an insulating layer having a first portion overlapping the optoelectronic unit and extending beyond the lateral surface, and a second portion separated from the first portion in a cross-sectional view; and a first conductive layer formed on the insulating layer.

Abstract: Disclosed are compositions comprising an isolated chimeric interleukin 6 receptor alpha (IL-6R?) binding protein or cells expressing an isolated chimeric IL-6R? binding protein. The isolated IL-6R? chimeric binding protein and cells expressing the protein may be used in methods of treating cancer and reducing the risk of cytokine release syndrome.

Abstract: Gate structures having neutral zones to minimize metal gate boundary effects and methods of fabricating thereof are disclosed herein. An exemplary metal gate includes a first portion, a second portion, and a third portion. The second portion is disposed between the first portion and the third portion. The first portion includes a first gate dielectric layer, a first p-type work function layer, and a first n-type work function layer. The second portion includes a second gate dielectric layer and a second p-type work function layer. The third portion includes a third gate dielectric layer, a third p-type work function, and a second n-type work function layer. The second p-type work function layer separates the first n-type work function layer from the second n-type work function layer, such that the first n-type work function layer does not share an interface with the second n-type work function layer.

Abstract: Disclosed herein is a device for characterizing a biological sample or an airborne sample. According to embodiments of the present disclosure, the device comprises an electrospray source, a mass analyzer, a charge detector, and optionally, an ion guide. The present device is useful in analyzing the particle population in the biological or airborne sample based on the mass to charge (m/z) ratio and the charge (z) of each particle. Also disclosed herein are the methods of making a diagnosis of cancer by use of the present device, and methods of determining the mass distribution of particles in an airborne sample.

Abstract: A proximity sensing device includes: a light source, a sensing unit, a light guide unit, and a window. The light source emits light, which is guided by the light guide unit to the window. The emitted light reflected by an object is received by the same window. The light guide unit includes a partial-transmissive-partial-reflective (PTPR) optical element, whereby the light emitted from the light source is reflected by the PTPR optical element, while the light reflected by the object passes through the PTPR optical element. There is only one window required.

Abstract: A wafer thinning apparatus includes a first metrology tool configured to measure an initial thickness of the wafer. The wafer thinning apparatus further includes a controller connected to the first metrology tool, and configured to determine a polishing time based on the initial thickness, a predetermined thickness and a material removal rate. The wafer thinning apparatus further includes a polishing tool connected to the controller configured to polish the wafer for a period of time equal to the polishing time. The wafer thinning apparatus includes a second metrology tool connected to the controller and the polishing tool, and configured to measure a polished thickness. The controller is configured to update the material removal rate based on the polished thickness, the predetermined thickness and the polishing time.

Abstract: In a shift register, a pre-charge unit is configured to receive a first input signal and output a pre-charge signal to a first node, a pull-up unit is configured to output a scan signal to a second node, and a pull-down unit is configured to receive a pull-down control signal. The pull-down control signal switches from a disable voltage to an enable voltage before the display panel switches from a non-display status to a display status.

Abstract: An optical transceiver includes a casing, a fastening member, a pivotal member and a driving member. The driving member is disposed on the casing, and the driving member is movable relative to the casing in a press direction. The pivotal member includes a pivoting shaft and a pressed portion connected to each other. The pivoting shaft of the pivotal member is pivoted on the casing. The pressed portion has a pressed point, and a virtual line passing through the pressed portion and the pivoting shaft is non-parallel to the press direction. When the driving member is moved in the press direction to press the pressed point, the pivotal member is pivoted. The fastening member is movably disposed on the casing to be either in a fastened position or a released position. The pivotal member is pivotable to move the fastening member from the fastened position to the released position.

Abstract: An electronic product includes a substrate and a bonding pad structure. The bonding pad structure is disposed on the substrate, and the bonding pad structure includes a first metal layer, a first insulating layer, at least one first connecting hole and a transparent conductive layer. The first metal layer and the first insulating layer are disposed on the substrate. The first connecting hole is situated in the first insulating layer, and the first connecting hole exposes a portion of the first metal layer. The transparent conductive layer is disposed on the first insulating layer, and the transparent conductive layer has a first edge and a second edge opposite to the first edge, wherein the transparent conductive layer is electrically connected to the first metal layer through the first connecting hole. A spacing between the first edge and the first connecting hole is greater than or equal to 100 ?m.

Abstract: A sense amplifier (SA) comprises a semiconductor substrate having an oxide definition (OD) region, a pair of SA sensing devices, a SA enabling device, and a sense amplifier enabling signal (SAE) line for carrying an SAE signal. The pair of SA sensing devices have the same poly gate length Lg as the SA enabling device, and they all share the same OD region. When enabled, the SAE signal turns on the SA enabling device to discharge one of the pair of SA sensing devices for data read from the sense amplifier.

Abstract: A tracking device including an image sensor, a light source and a processor is provided. The image sensor senses reflected light or scattered light formed by the light source illuminating a work surface. The processor calculates a trace of the tracking device according to one of the reflected light and the scattered light that generates more apparent image features so as to increase the adaptable work surfaces.