Abstract: A system of recognizing identity of object and method of automatically recognizing identity of object are provided. The method is to shoot a monitoring region for obtaining a monitoring image, recognize an object image in the monitoring image, scan the monitoring region for retrieving each identity data of each wireless badge, determines each image position of each object image in the monitor region, determine each badge position of each wireless badge in the monitor region, and link the object image and the identity data together when the positions match with each other. The system can pair the object image with the identity data instantly, determine whether the object is unregistered, and effectively save the time and human resources required by artificially pairing the object images with the identity data.

Abstract: An ion wind generating device includes a high voltage power supply, a capacitor connected in parallel to the high voltage power supply, a first metal cone connected in series to the high voltage power supply, a ground plate disposed on the same axis as the first metal cone, a starter motor, and a second metal cone disposed on a connecting shaft. The starter motor includes a rotating shaft and a connecting shaft perpendicular to the rotating shaft. After second metal cone moves to be located between first cone and the ground plate, the starter motor stops rotating. The high voltage power supply charges the capacitor with the high voltage power, and the capacitor discharges the first metal cone. When the second metal cone is located between the first metal cone and the ground plate, the first metal cone causes the second metal cone to discharge to generate an ionic wind.

Abstract: A silicon carbide crystal includes a seed layer, a bulk layer and a stress buffering structure formed between the seed layer and the bulk layer. The seed layer, the bulk layer and the stress buffering structure are each formed with a dopant that cycles between high and low dopant concentration. The stress buffering structure includes a plurality of stacked buffer layers and a transition layer over the buffer layers. The buffer layer closest to the seed layer has the same variation trend of the dopant concentration as the buffer layer closest to the transition layer, and the dopant concentration of the transition layer is equal to the dopant concentration of the seed layer.

Abstract: The present invention provides a microcontroller, wherein the microcontroller includes a processor, a first memory and a cache controller. The first memory includes at least a working space. The cache controller is coupled to the first memory, and is arranged for managing the working space of the first memory, and dynamically loading at least one object from a second memory to the working space of the first memory in an object-oriented manner.

Abstract: A semiconductor device and method of formation are provided. The semiconductor device comprises a silicide layer over a substrate, a metal plug in an opening defined by a dielectric layer over the substrate, a first metal layer between the metal plug and the dielectric layer and between the metal plug and the silicide layer, a second metal layer over the first metal layer, and an amorphous layer between the first metal layer and the second metal layer.

Abstract: A current-driven pixel circuit and a related image sensor are disclosed. The image sensor includes a pixel circuit array and a current reference circuit. The pixel circuit array includes a plurality of pixel circuits, each having a photo detecting element and a power element. The photo detecting element changes impendence in response to illumination. The power element is arranged to selectively provide a driving current to the photo detecting element. The current reference circuit includes a current source, wherein the power element provides the driving current according to a reference current of the current source, respectively.

Abstract: A touch display device including a display panel and a touch device is provided. The display panel includes a plurality of sub-pixels. Each of the sub-pixels includes a pixel electrode and a switching element. The touch device is located on the display panel and includes a touch electrode area and a dummy electrode area. The touch device includes an electrode structure and a conductive mesh. The conductive mesh includes a plurality of reticulated repeating units. Each of the reticulated repeating units is overlapped with at least one corresponding sub-pixel and includes first and second X-shaped conductive structures. Two ends of the first X-shaped conductive structure are connected to two ends of the second X-shaped conductive structure. The first and second X-shaped conductive structures in the touch electrode area are in a continuous pattern. The first and second X-shaped conductive structures in the dummy electrode area are in a discontinuous pattern.

Abstract: An augmented reality display method of simulated lip makeup is provided. A system of simulation makeup in the present disclosed example is used to retrieve a facial image (40, 60, 700, 80) of a user (40), recognize a plurality of feature points (50) in the facial image (40, 60, 700, 80), generate a lip mask (61, 701) according to the plurality of characteristic points (50) and the facial image (40, 60, 700, 80), retrieve lip color data (62, 705), execute a simulation process of lip makeup on lips in the facial image (40, 60, 700, 80) according the lip color data (62, 705) and the lip mask (61, 701) for obtaining a facial image with lip makeup (64, 709, 85), and display the facial image with lip makeup (64, 709, 85).

Abstract: A method includes etching a dielectric layer of a substrate to form an opening in the dielectric layer, forming a metal layer extending into the opening, performing an anneal process, so that a bottom portion of the metal layer reacts with a semiconductor region underlying the metal layer to form a source/drain region, performing a plasma treatment process on the substrate using a process gas including hydrogen gas and a nitrogen-containing gas to form a silicon-and-nitrogen-containing layer, and depositing a metallic material on the silicon-and-nitrogen-containing layer.

Abstract: A semiconductor device with multiple silicide regions is provided. In embodiments a first silicide precursor and a second silicide precursor are deposited on a source/drain region. A first silicide with a first phase is formed, and the second silicide precursor is insoluble within the first phase of the first silicide. The first phase of the first silicide is modified to a second phase of the first silicide, and the second silicide precursor being soluble within the second phase of the first silicide. A second silicide is formed with the second silicide precursor and the second phase of the first silicide.

Abstract: An interface circuit of an electronic device includes one or more pins, an internal circuit, an over-voltage protection circuit and a monitoring circuit. The pins are selectively connected to an external circuit. The over-voltage protection circuit is coupled between the internal circuit and at least one pin to prevent the internal circuit from being damaged by a voltage spike or a current surge received at the pin. The monitoring circuit is configured to monitor one or more electrical characteristics of at least one critical component in the internal circuit or the over-voltage protection circuit by monitoring the value of at least one parameter related to the electrical characteristics of the critical component. When the value of the parameter is outside of a safety range, the monitoring circuit outputs a warning signal.

Abstract: A light field display apparatus includes a display, a lens array, a plurality of optical devices, and a computing device. The display emits a light field image beam to a projection target. The lens array is disposed on a transmission path of the light field image beam and located between the display and the projection target. The optical devices are disposed on the transmission path of the light field image beam. The computing device is electrically connected to the display to receive an image signal having depth information and convert the image signal having the depth information into a light field image signal. The light field image signal is transmitted to the display. The computing device converts the image signal having the depth information into the light field image signal by an equivalent optical model. A light field display method is also provided.

Abstract: A method for controlling accumulated resistance property of a ReRAM device, wherein the method includes steps as follows: A first programing pulse set is firstly applied to a ReRAM device for acquiring a reference accumulated resistance distribution. A second programing pulse set is then provided according to the reference accumulated resistance distribution, and the second programing pulse set is applied to the ReRAM device, to make the ReRAM device having a predetermined accumulated resistance distribution.

Abstract: A touch display device includes a display panel and an electrode layer. The display panel includes a plurality of sub-pixels. The electrode layer is disposed on the display panel, and has a dummy electrode area and a touch electrode area. The electrode layer includes a plurality of repeated units and a plurality of connection structures. The repeated units are disposed in the dummy electrode area and the touch electrode area. Each of the repeated units overlaps with at least one sub pixel. Each of the repeated units includes a plurality of slits. The slits include a straight line slit and a bent line slit connected with the straight line slit. The connection structures are disposed in the slits of the repeated units disposed in the touch electrode area. Each of the repeated units disposed in the touch electrode area has at least one connection structure.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a recess in a layer. The recess has two opposite first inner walls and two opposite second inner walls, the first inner walls are spaced apart by a first distance, the second inner walls are spaced apart by a second distance, and the first distance is less than the second distance. The method includes depositing a first covering layer in the recess. The first covering layer covering the first inner walls is thinner than the first covering layer covering the second inner walls. The method includes removing the first covering layer over the first inner walls and a bottom surface of the recess.

Abstract: An embodiment of this invention A NiO chip is provided. The NiO chip includes a substrate, a nickel oxide thin film on the substrate, and a bioprobe layer on the nickel oxide thin film. The nickel oxide thin film has a light transmittance of more than 60% and a nanostructure. The bioprobe layer includes a plurality of bioprobes modified by Histidine (His) or a His-tagged protein.

Abstract: A memory management method, a memory storage device and a memory control circuit unit are provided. The method includes: storing first data to a first physical erasing unit and marking the first physical erasing unit as belonging to a first group, wherein the first data belongs to a first type; storing second data to a second physical erasing unit and marking the second physical erasing unit as belonging to a second group, wherein the second data belongs to a second type which is different from the first type; selecting a third physical erasing unit as an active physical erasing unit and marking the third physical erasing unit as belonging to the first group; when a data moving operation is performed, moving valid data of the first physical erasing unit to the third physical erasing unit according to a first parameter of the first physical erasing unit.

Abstract: An optical waveguide apparatus including an optical waveguide element and an optical recycling element is provided. The optical waveguide element includes a first surface and a second surface opposite to the first surface. The first surface or the second surface includes an optical structure. An incident light enters the optical waveguide element via the first surface and is transmitted to the second surface. The optical recycling element is disposed on the second surface of the optical waveguide element. The incident light is transmitted to the optical recycling element via the second surface. The optical recycling element changes a transmission direction of the incident light to generate a recycled light. The recycled light enters the optical waveguide element via the second surface and is transmitted to the first surface.

Abstract: A driving circuit including a detection circuit, a first control circuit, a second control circuit, and a driving transistor is provided. The detection circuit is coupled between a first power terminal and a second power terminal and generates a detection signal according to the voltages of the first and second power terminals. The first control circuit generates a first control signal according to the detection signal. The second control circuit generates a second control signal according to the detection signal. The driving transistor is coupled between an input-output pad and the second power terminal. When the detection signal is at a first level, the driving transistor is turned on according to the first control signal. When the detection signal is at a second level, the driving transistor is configured to operate according to the second control signal. The first level is different from the second level.

Abstract: The present invention pertains to a pharmaceutical, or nutraceutical, “self-emulsifying solid dispersion” composition for oral administration which contains (a) a drug or a nutraceutical that is water-insoluble or poorly water-soluble; (b) at least one surfactant; (c) one carrier selected from the group consisting of silicic acid, a silicate, or any combination thereof; and (d) at least one carbohydrate filler.