Abstract: A method for forming an interconnect structure includes forming a dielectric layer overlying a substrate, forming an opening in the dielectric layer, forming a metal-containing layer overlying the opening in the dielectric layer, forming a conformal protective layer overlying the metal-containing layer, filling a conductive layer in the opening, and performing a thermal process to form a metal oxide layer barrier layer underlying the metal-containing layer.

Abstract: The invention relates to a moisture-proof and insulating coating material comprising a block copolymer or hydrogenated copolymer thereof (A), an adhesive resin (B) and a solvent (C). The block copolymer or hydride (A) comprises at least two vinyl aromatic polymer blocks and at least one conjugated diene polymer block, and in the moisture-proof and insulating coating material, the content of residual vinyl aromatic monomer is less than 300 ppm, and the content of vinyl aromatic oligomer is less than 300 ppm. The moisture-proof and insulating coating material according to the invention has good reworkability. A moisture-proof and insulating film and a method for producing the same and an electrical component comprising the moisture-proof and insulating film and a method for producing the same are also provided in the invention.

Abstract: A color liquid crystal display device includes a liquid crystal display element and a backlight unit. The liquid crystal display element includes a color filter having a red filter segment, a green filter segment, and a blue filter segment. The blue filter segment is prepared from a blue photosensitive resin composition. The blue photosensitive resin composition includes a pigment combination, an alkali-soluble resin, a compound having an ethylenic group, and a photoinitiator. The pigment combination includes a copper phthalocyanine-based blue pigment. The color filter has a z value ranging from 0.3 to 0.5 in a chromaticity diagram of a XYZ color system. The backlight unit is coupled to the liquid crystal display element and has a color temperature ranging from 8,000 K to 20,000 K.

Abstract: A semiconductor device and method of formation are provided. The semiconductor device comprises a metal plug in a first opening over a substrate. The metal plug has a contact bottom surface that is substantially convex. The substantially convex contact bottom surface has an increased contact area as compared to a contact bottom surface of a metal plug that is not substantially convex. The increased contact area decreases a resistance of the metal plug. The increased contact area requires a smaller deposition amount to form a metal plug seed layer of the metal plug than a semiconductor device with a smaller contact area. A smaller deposition amount reduces an overhang of the deposited metal plug seed layer material. A reduced overhang of the deposited metal plug seed layer material reduces pitting in a metal plug formed from the deposited metal plug seed layer material.

Abstract: An electronic device includes a housing having a top wall, and a microphone module mounted in the housing. The microphone module includes a mounting seat having two oppositely spaced-apart upright suspension surfaces extending transversely from the top wall. A buffer member includes a main body disposed between and spaced apart from the suspension surfaces, and two suspension bumps protruding from the main body toward and abutting respectively and tightly against the suspension surfaces. The main body has an inner portion defining an accommodating space. A microphone body is disposed in the accommodating space.

Abstract: A semiconductor device and method of formation are provided. The semiconductor device comprises a metal plug in a first opening over a substrate, the metal plug is over a silicide layer, and the silicide layer is over a metal oxide layer. The metal oxide layer has an oxygen gradient, such that a percentage of oxygen increases from a top surface of the metal oxide layer to a bottom surface of the metal oxide layer. The metal oxide layer unpins the Fermi level of the interface between the metal plug and the substrate, which is exhibited by a lowered Schottky barrier height (SBH) and increased oxygen vacancy states between the V.B. and the C.B. of the metal oxide layer, which decreases the intrinsic resistivity between the metal plug and the substrate as compared to a semiconductor device that lacks such a metal oxide layer.

Abstract: A communication device and a method for enhancing impedance bandwidth of an antenna are provided. The communication device includes at least one ground, at least one antenna, a current-drawing conductor structure, and at least one coupling conductor structure. The antenna is electrically connected to the ground through a source and generates at least one operating frequency band for transmitting or receiving electromagnetic signals of at least one communication band. The current-drawing conductor structure includes a plurality of conductor elements, where there is at least one mutual coupling portion formed between neighboring conductor elements. The coupling conductor structure has a first conductor portion and a second conductor portion. One end of the first conductor portion is electrically connected to the ground, and another end thereof is electrically connected to the second conductor portion.

Abstract: Disclosed is an extract of Perilla frutescens seeds that contains rosmarinic acid, luteolin, and apigenin, the weight ratio between rosmarinic acid, luteolin, and apigenin being 0.1-200:0.1-200:1. Also disclosed is a method for treating a psychiatric disorder using the above-described extract or an extract of Perilla frutescens seeds containing at least an active agent selected from the group consisting of rosmarinic acid, luteolin, and apigenin.

Abstract: A track type supporting mechanism for supporting at least one machine is disclosed in the present invention. The track type supporting mechanism includes a base, at least one linear guideway disposed on the base, at least one sliding block slidably disposed on the at least one linear guideway, and at least one supporting platform disposed on the at least one sliding block for supporting the at least one machine, so that the at least one machine slides relative to the base via the at least one linear guideway and the at least one sliding block.

Abstract: A series of novel phosphorus-containing compounds having the following formula is provided: in which: R1-R4, A, Q and m are as defined in the specification. A process for the preparation of the compound of formula (I) is also provided. A polymer of formula (PA), and preparation process and use thereof are further provided. A polymer of formula (PI), and preparation process and use thereof are also provided.

Abstract: A memory device includes a first signal line; a memory cell array divided into a first area and a second area and having a plurality of first memory cells and second memory cells in the first area and second area, respectively. The plurality of first and second memory cells are coupled the first signal line, and each has a reference node. A first voltage adjustment circuit adjusts voltages at the reference nodes of the plurality of first memory cells, wherein the first voltage adjustments circuit includes: a first switch coupled between the reference nodes of the plurality of first memory cells and the ground, controlled by an address signal; and a first bias element coupled to the reference nodes of the plurality of first memory cells. A second voltage adjustment circuit adjusts voltages at the reference nodes of the plurality of second memory cells.

Abstract: An earphone with adjustable-length cable includes a plugging section, a connecting cable and a receiving section. The plugging section has an attach-conductive adapter and a plug at two ends respectively. The connecting cable connects the plugging section and the receiving section, and has at least one separable attaching cable. The separable attaching cable has two attach-conductive adapters at two ends respectively. The receiving section has an attach-conductive adapter and an audio-playing unit at two ends respectively. Each attach-conductive adapter is formed with an end surface, and has at least one attaching element and a plurality of conductive plates exposed at outside of the end surface. The attach-conductive adapters are attached each other by the attaching elements, and electrically connected to each other through the conductive plates, so that signals from the plugging section are transmitted to the receiving section and are played by the audio-playing unit.

Abstract: A stereoscopic display method includes the following acts. A plurality of stereoscopic images are provided by providing a plurality of stereoscopic display panels. At least one border is disposed between two of the stereoscopic display panels adjacent to each other. At least one stripe segment is added in each of the stereoscopic images. The stripe segments are adjacent to the border, such that the stripe segments and the border form a floating frame when an observer observes the stripe segments and the border using both eyes of the observer. A width of each of the stripe segments is adjusted, such that a depth of field of the floating frame is substantially the same as a depth of field of the stereoscopic images adjacent to the floating frame.

Abstract: A method includes performing a first sputtering to form a first metal film on a surface of a semiconductor region. The first sputtering is performed using a first ion energy. The method further includes performing a second sputtering to form a second metal film over and contacting the first metal film, wherein the first and the second metal films includes a same metal. The second sputtering is performed using a second ion energy lower than the first ion energy. An annealing is performed to react the first and the second metal films with the semiconductor region to form a metal silicide.

Abstract: The present invention provides a method and apparatus for generating a specific flip angle distribution in magnetic resonance imaging; the method uses a plurality of RF transmission coils combined with linear and nonlinear spatial encoding magnetic fields to generate a homogeneous flip angle distribution.

Abstract: A device includes a semiconductor substrate, a gate stack over the semiconductor substrate, and a stressor region having at least a portion in the semiconductor substrate and adjacent to the gate stack. The stressor region includes a first stressor region having a first p-type impurity concentration, a second stressor region over the first stressor region, wherein the second stressor region has a second p-type impurity concentration, and a third stressor region over the second stressor region. The third stressor region has a third p-type impurity concentration. The second p-type impurity concentration is lower than the first and the third p-type impurity concentrations.

Abstract: An illumination device including a base, at least one LED light source and a first diffusing element is provided. The base has a supporting plane. The LED light source disposed on the supporting plane has a light emitting surface substantially parallel to the supporting plane. The first diffusing element disposed on the supporting plane is a hollow column surrounding the LED light source. An inner diameter width of the first diffusing element is gradually reduced outward from the base. The first diffusing element has a rough surface comprising a plurality of surface structures.

Abstract: A memory device is provided. The memory device includes a first signal line, a memory cell array, first and second voltage adjustment circuits. The memory cell array is divided into first and second areas and includes first memory cells in the first area and second memory cells in the second area. The first and second memory cells are coupled the first signal line. Each of the first and second memory cells has a reference node. The first voltage adjustment circuit adjusts voltages at the reference nodes of the first memory cells. The second voltage adjustment circuit adjusts voltages at the reference nodes of the second memory cells. The reference nodes of the first memory cells are coupled to a ground through the first voltage adjustment circuit. The reference nodes of the second memory cells are coupled to the ground through the second voltage adjustment circuit.

Abstract: A semiconductor structure includes a substrate, a shallow trench isolation (STI) structure embedded in the substrate, a stressor embedded in the substrate, and a conductive plug over and electrically coupled with the stressor. A same-material region is sandwiched by the STI structure and an entire sidewall of the stressor, and the same-material region is a continuous portion of the substrate.

Abstract: A device includes a semiconductor substrate, a gate stack over the semiconductor substrate, and a stressor region having at least a portion in the semiconductor substrate and adjacent to the gate stack. The stressor region includes a first stressor region having a first p-type impurity concentration, a second stressor region over the first stressor region, wherein the second stressor region has a second p-type impurity concentration, and a third stressor region over the second stressor region. The third stressor region has a third p-type impurity concentration. The second p-type impurity concentration is lower than the first and the third p-type impurity concentrations.