Abstract: A liquid crystal display device includes a display panel, a multiplexer, an alignment circuit and a short bar circuit. The multiplexer is configured to provide a plurality of output data signals according to a plurality of switch control signals and an input data signal. During the alignment period, the alignment circuit is configured to provide a curing voltage to the display panel, and the short bar circuit is configured to couple the multiplexer to a predetermined voltage.

Abstract: A pixel driving circuit includes a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, an organic light emitting diode, and a capacitor. The second transistor is electrically connected between a first end and a gate end of the first transistor. The third transistor is electrically connected between the first end of the first transistor and a first supply voltage source. The fourth transistor is electrically connected between a second end of the first transistor and a data input end. The fifth transistor is electrically connected to the second end of the first transistor. The organic light emitting diode is electrically connected between the fifth transistor and a second supply voltage source. The capacitor is electrically connected to the gate end of the first transistor.

Abstract: A liquid crystal display device includes a display panel, a multiplexer, an alignment circuit and a short bar circuit. The multiplexer is configured to provide a plurality of output data signals according to a plurality of switch control signals and an input data signal. During the alignment period, the alignment circuit is configured to provide a curing voltage to the display panel, and the short bar circuit is configured to couple the multiplexer to a predetermined voltage.

Abstract: A liquid crystal display device includes a display panel, a multiplexer, an alignment circuit and a short bar circuit. The multiplexer is configured to provide a plurality of output data signals according to a plurality of switch control signals and an input data signal. During the alignment period, the alignment circuit is configured to provide a curing voltage to the display panel, and the short bar circuit is configured to couple the multiplexer to a predetermined voltage.

Abstract: A pixel driving circuit includes a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, an organic light emitting diode, and a capacitor. The second transistor is electrically connected between a first end and a gate end of the first transistor. The third transistor is electrically connected between the first end of the first transistor and a first supply voltage source. The fourth transistor is electrically connected between a second end of the first transistor and a data input end. The fifth transistor is electrically connected to the second end of the first transistor. The organic light emitting diode is electrically connected between the fifth transistor and a second supply voltage source. The capacitor is electrically connected to the gate end of the first transistor.

Abstract: A pixel driving circuit of an organic light emitting diode (OLED) includes a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a capacitor, and an OLED. The operation of the pixel driving circuit includes three stages including discharging, data writing, and emitting. The pixel driving circuit compensates the threshold voltage of the transistor in the stage of data writing, so the driving current of the OLED can be irrelevant to the variations of threshold voltages.

Abstract: A liquid crystal display device includes a display panel, a multiplexer, an alignment circuit and a short bar circuit. The multiplexer is configured to provide a plurality of output data signals according to a plurality of switch control signals and an input data signal. During the alignment period, the alignment circuit is configured to provide a curing voltage to the display panel, and the short bar circuit is configured to couple the multiplexer to a predetermined voltage.

Abstract: A pixel driving circuit of an organic light emitting diode includes a first switch, a capacitor, a transistor, a second switch, a third switch and an organic light emitting diode. The operation of the pixel driving circuit includes three stages of resetting, data writing, and emitting. The pixel driving circuit is able to reset the transistor for de-trapping holes at stages of resetting and data writing. The image retention caused by the transistor hysteresis may be improved.

Abstract: The present invention, in one aspect, relates to an active matrix electroluminescent display device. In one embodiment, the active matrix electroluminescent display device includes an emission layer and a circuit layer. The emission layer includes a plurality of regularly-spaced emission pixels disposed in a row. The circuit layer is disposed under the emission layer and includes a plurality of pixel circuits. Each pixel circuit is electrically coupled to a respective emission pixel for controlling the current through the respective emission pixel in response to an applied data signal. The plurality of pixel circuits is spatially arranged into a plurality of groups with each group including one or more adjacent pixel circuits. Any two neighboring groups of adjacent pixel circuits are separated by a space therebetween. The circuit layer further includes a plurality of buffer circuits connected to each other in series.

Abstract: A pixel driving circuit of an organic light emitting diode includes a first switch, a capacitor, a transistor, a second switch, a third switch and an organic light emitting diode. The operation of the pixel driving circuit includes three stages of resetting, data writing, and emitting. The pixel driving circuit is able to reset the transistor for de-trapping holes at stages of resetting and data writing. The image retention caused by the transistor hysteresis may be improved.

Abstract: A pixel driving circuit of an organic light emitting diode (OLED) includes a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a capacitor, and an OLED. The operation of the pixel driving circuit includes three stages including discharging, data writing, and emitting. The pixel driving circuit compensates the threshold voltage of the transistor in the stage of data writing, so the driving current of the OLED can be irrelevant to the variations of threshold voltages.

Abstract: A method of fabricating a color organic electroluminescent display involves forming cathode electrodes on a substrate, and forming a first organic semiconductor layer having an electron-injection transporting property on the cathode electrodes. Solutions containing organic light-emitting material that can dissolve portions of the first organic semiconductor layer are patterned on the first organic semiconductor layer. Then, a solvent in the solutions is removed to form regions having second organic semiconductor layers and mixed organic semiconductor layers, wherein the second organic semiconductor layers are formed on the first organic semiconductor layer and are mostly composed of the organic light-emitting material, and the mixed organic semiconductor layers, composed of the organic light-emitting material and material constituting the first organic semiconductor layer, are embedded in the first organic semiconductor layer. Anode electrodes are formed over the first and second organic semiconductor layers.

Abstract: A thin-film transistor and fabrication method thereof are provided. A controlled micro-line is formed by inkjet printing in combination with the coffee ring effect. At least two organic thin-film transistors are formed on two ring ridges of the coffee rings. For example, N-type and P-type soluble semiconductor materials may be formed on two adjacent ring ridges to form a complementary metal-oxide semiconductor (CMOS) device. Thus, the invention can simplify the process for fabricating thin-film transistors and increase their applications.

Abstract: A thin-film transistor and method for fabricating a thin-film transistor is disclosed. In the method, a controlled micro-line is formed by inkjet printing in combination with the coffee ring effect. The micro-line may be a semiconductor or an insulator. A high-current thin-film transistor utilizing the micro-line of the coffee ring as a channel is formed. A high current TFT can be achieved by utilizing the micro-line structure of the coffee ring ridge as a TFT channel.

Abstract: A method of fabricating a color organic electroluminescent display involves forming cathode electrodes on a substrate, and forming a first organic semiconductor layer having an electron-injection transporting property on the cathode electrodes. Solutions containing organic light-emitting material that can dissolve portions of the first organic semiconductor layer are patterned on the first organic semiconductor layer. Then, a solvent in the solutions is removed to form regions having second organic semiconductor layers and mixed organic semiconductor layers, wherein the second organic semiconductor layers are formed on the first organic semiconductor layer and are mostly composed of the organic light-emitting material, and the mixed organic semiconductor layers, composed of the organic light-emitting material and material constituting the first organic semiconductor layer, are embedded in the first organic semiconductor layer. Anode electrodes are formed over the first and second organic semiconductor layers.

Abstract: An a-C:H ISFET device and manufacturing method thereof. The present invention prepares a-C:H as the detection membrane of an ISFET by plasma enhanced low pressure chemical vapor deposition (PE-LPCVD) to obtain an a-C:H ISFET. The present invention also measures the current-voltage curve for different pH and temperatures by a current measuring system. The temperature parameter of the a-C:H ISFET is calculated according to the relationship between the current-voltage curve and temperature. In addition, the drift rates of the a-C:H ISFET for different pH and hysteresis width of the a-C:H ISFET for different pH loops are calculated by a constant voltage/current circuit and a voltage-time recorder to measure the gate voltage of the a-C:H ISFET.

Abstract: An a-C:H ISFET device and manufacturing method thereof. The present invention prepares a-C:H as the detection membrane of an ISFET by plasma enhanced low pressure chemical vapor deposition (PE-LPCVD) to obtain an a-C:H ISFET. The present invention also measures the current-voltage curve for different pH and temperatures by a current measuring system. The temperature parameter of the a-C:H ISFET is calculated according to the relationship between the current-voltage curve and temperature. In addition, the drift rates of the a-C:H ISFET for different pH and hysteresis width of the a-C:H ISFET for different pH loops are calculated by a constant voltage/current circuit and a voltage-time recorder to measure the gate voltage of the a-C:H ISFET.

Abstract: An a-C:H ISFET device and manufacturing method thereof. The present invention prepares a-C:H as the detection membrane of an ISFET by plasma enhanced low pressure chemical vapor deposition (PE-LPCVD) to obtain an a-C:H ISFET. The present invention also measures the current-voltage curve for different pH and temperatures by a current measuring system. The temperature parameter of the a-C:H ISFET is calculated according to the relationship between the current-voltage curve and temperature. In addition, the drift rates of the a-C:H ISFET for different pH and hysteresis width of the a-C:H ISFET for different pH loops are calculated by a constant voltage/current circuit and a voltage-time recorder to measure the gate voltage of the a-C:H ISFET.

Abstract: An a-C:H ISFET device and manufacturing method thereof. The present invention prepares a-C:H as the detection membrane of an ISFET by plasma enhanced low pressure chemical vapor deposition (PE-LPCVD) to obtain an a-C:H ISFET. The present invention also measures the current-voltage curve for different pH and temperatures by a current measuring system. The temperature parameter of the a-C:H ISFET is calculated according to the relationship between the current-voltage curve and temperature. In addition, the drift rates of the a-C:H ISFET for different pH and hysteresis width of the a-C:H ISFET for different pH loops are calculated by a constant voltage/current circuit and a voltage-time recorder to measure the gate voltage of the a-C:H ISFET.

Abstract: An a-C:H ISFET device and manufacturing method thereof. The present invention prepares a-C:H as the detection membrane of an ISFET by plasma enhanced low pressure chemical vapor deposition (PE-LPCVD) to obtain an a-C:H ISFET. The present invention also measures the current-voltage curve for different pH and temperatures by a current measuring system. The temperature parameter of the a-C:H ISFET is calculated according to the relationship between the current-voltage curve and temperature. In addition, the drift rates of the a-C:H ISFET for different pH and hysteresis width of the a-C:H ISFET for different pH loops are calculated by a constant voltage/current circuit and a voltage-time recorder to measure the gate voltage of the a-C:H ISFET.