Patents by Inventor Hsuan-Ming Tsai

Hsuan-Ming Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • A-C:H ISFET device, manufacturing method, and testing methods and apparatus thereof
    Publication number: 20040178427
    Abstract: An a-C:H ISFET device and manufacturing method thereof. The present invention prepares a-C:H as the detection membrane of an ISFET by plasma enhanced low pressure chemical vapor deposition (PE-LPCVD) to obtain an a-C:H ISFET. The present invention also measures the current-voltage curve for different pH and temperatures by a current measuring system. The temperature parameter of the a-C:H ISFET is calculated according to the relationship between the current-voltage curve and temperature. In addition, the drift rates of the a-C:H ISFET for different pH and hysteresis width of the a-C:H ISFET for different pH loops are calculated by a constant voltage/current circuit and a voltage-time recorder to measure the gate voltage of the a-C:H ISFET.
    Type: Application
    Filed: March 29, 2004
    Publication date: September 16, 2004
    Applicant: NATIONAL YUNLIN UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Jung-Chuan Chou, Hsuan-Ming Tsai
  • A-C:H ISFET device, manufacturing method, and testing methods and apparatus thereof
    Publication number: 20030214005
    Abstract: An a-C:H ISFET device and manufacturing method thereof. The present invention prepares a-C:H as the detection membrane of an ISFET by plasma enhanced low pressure chemical vapor deposition (PE-LPCVD) to obtain an a-C:H ISFET. The present invention also measures the current-voltage curve for different pH and temperatures by a current measuring system. The temperature parameter of the a-C:H ISFET is calculated according to the relationship between the current-voltage curve and temperature. In addition, the drift rates of the a-C:H ISFET for different pH and hysteresis width of the a-C:H ISFET for different pH loops are calculated by a constant voltage/current circuit and a voltage-time recorder to measure the gate voltage of the a-C:H ISFET.
    Type: Application
    Filed: April 22, 2003
    Publication date: November 20, 2003
    Inventors: Jung-Chuan Chou, Hsuan-Ming Tsai
  • Method for measuring drift values of an ISFET using the hydrogenated amorphous silicon as a sensing film
    Patent number: 6531858
    Abstract: A method of measuring the the drift value of an a-Si:H ISFET) has the steps of: (1) using a constant voltage/current circuit to fix the drain/source current and the drain/source voltage of the a-Si:H ISFET; (2) dipping the sensing film into a buffer solution; (3) recording the gate/source output voltage of the a-Si:H ISFET by using a voltage-time recorder; and (4) exchanging the pH value of the buffer solution and then repeating the steps of (1)˜(3).
    Type: Grant
    Filed: February 9, 2001
    Date of Patent: March 11, 2003
    Assignee: National Yunlin University of Science and Technology
    Inventors: Jung Chuan Chou, Hsuan Ming Tsai
  • Method and apparatus for measuring hysteresis and drift values of an isfet using the hydrogenated amorphous silicon as a sensing film
    Publication number: 20020033705
    Abstract: A method of measuring the hysteresis value and the drift value of an a-Si:H ISFET) has the steps of: (1) using a constant voltage/current circuit to fix the drain/source current and the drain/source voltage of the a-Si:H ISFET; (2) dipping the sensing film into a buffer solution; (3) recording the gate/source output voltage of the a-Si:H ISFET by using a voltage-time recorder; and (4) exchanging the pH value of the buffer solution and then repeating the steps of (1)˜(3).
    Type: Application
    Filed: February 9, 2001
    Publication date: March 21, 2002
    Applicant: National Yunlin University of Science and Technology
    Inventors: Jung Chuan Chou, Hsuan Ming Tsai