Abstract: A method includes forming a first conductive feature over a semiconductor substrate, forming an ILD layer over the first conductive feature, patterning the ILD layer to form a trench, and forming a conductive layer over the patterned ILD layer to fill the trench. The method further includes polishing the conductive layer to form a via contact configured to interconnect the first conductive feature with a second conductive feature, where polishing the conductive layer exposes a top surface of the ILD layer, polishing the exposed top surface of the ILD layer, such that a top portion of the via contact protrudes from the exposed top surface of the ILD layer, and forming the second conductive feature over the via contact, such that the top portion of the via contact extends into the second conductive feature.

Abstract: A manufacturing method of a display device includes forming light emitting components on a first substrate, the light emitting components include a first side and a second side, and the second side is away from the first substrate; forming a circuit layer on the first substrate and on the second side of the light emitting components; forming a first protective layer on the circuit layer and forming an insulating layer on the first protective layer; removing the first substrate after forming a second substrate on the insulating layer; forming a black matrix layer on the first side of the light emitting components, and the black matrix layer includes openings; forming light conversion layers in the openings of the black matrix layer; forming a second protective layer on the black matrix layer and the light conversion layers; and forming a third substrate on the second protective layer.

Abstract: In a method for obtaining the equivalent oxide thickness of a dielectric layer, a first semiconductor capacitor including a first silicon dioxide layer and a second semiconductor capacitor including a second silicon dioxide layer are provided and a modulation voltage is applied to the semiconductor capacitors to measure a first scanning capacitance microscopic signal and a second scanning capacitance microscopic signal. According to the equivalent oxide thicknesses of the silicon dioxide layers and the scanning capacitance microscopic signals, an impedance ratio is calculated. The modulation voltage is applied to a third semiconductor capacitor including a dielectric layer to measure a third scanning capacitance microscopic signal. Finally, the equivalent oxide thickness of the dielectric layer is obtained according to the equivalent oxide thickness of the first silicon dioxide layer, the first scanning capacitance microscopic signal, third scanning capacitance microscopic signal, and the impedance ratio.

Abstract: This patent presents a multidimensional space vector modulation (MDSVM) circuit formed by coupling a half-bridge logic control circuit not directly coupled to electronic components with at least three half-bridge logic control circuits coupled to electronic components. The half-bridge logic control circuit not directly coupled with any electronic components can form a full-bridge circuit with any other half-bridge logic control circuit coupled with electronic components. Therefore, users can further control the voltage difference between both ends of each electronic component separately and then individually control the strength and direction of current flowing through each electronic component and solving the problem of control attributed to the complexity of prior art.

Abstract: A computing device includes: a storage circuit, for storing an arbitration interframe space (AIFS) time, at least one expected value of at least one backoff time, a preamble time, a short interframe space (SIFS) time and an acknowledgement (ACK) time; a first computing circuit, for computing a payload time according to a packet length and a packet rate; a second computing circuit, coupled to the storage circuit and the first computing circuit, for computing at least one packet transmission time according to the AIFS time, the at least one expected value of the at least one backoff time, the preamble time, the SIFS time, the ACK time and the payload time; and a third computing circuit, coupled to the second computing circuit, for computing a total packet transmission time according to the at least one packet transmission time and an estimated packet error rate.

Abstract: A transmission device for suppressing the glass-fiber effect includes a circuit board and a transmission line. The circuit board includes a plurality of glass fibers, so as to define a fiber pitch. The transmission line is disposed on the circuit board. The transmission line includes a plurality of non-parallel segments. Each of the non-parallel segments of the transmission line has an offset distance with respect to a reference line. The offset distance is longer than or equal to a half of the fiber pitch.

Abstract: A device includes a pair of gate spacers on a substrate, and a gate structure on the substrate and between the gate spacers. The gate structure includes an interfacial layer, a metal oxide layer, a nitride-containing layer, a tungsten-containing layer, and a metal compound layer. The interfacial layer is over the substrate. The metal oxide layer is over the interfacial layer. The nitride-containing layer is over the metal oxide layer. The tungsten-containing layer is over the nitride-containing layer. The metal compound layer is over the tungsten-containing layer. The metal compound layer has a different material than a material of the tungsten-containing layer.

Abstract: A six-piece optical image capturing system is disclosed. In order from an object side to an image side, the optical lens along the optical axis includes a first lens with refractive power; a second lens with refractive power; a third lens with refractive power; a fourth lens with refractive power; a fifth lens with refractive power, and a sixth lens with negative refractive power. The image-side surface and object-side surface of the sixth lens are aspheric, and at least one surface of the sixth lens has an inflection point. At least one among the first lens to the fifth lens has positive refractive power. The optical lens of the optical image capturing system can increase aperture value and improve the imagining quality for use in compact cameras.

Abstract: Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes channel structures vertically stacked over a substrate and a source/drain structure laterally attached to the channel structures in the first direction. The semiconductor structure also includes a dielectric wall structure laterally attached to the channel structures in the second direction. The second direction is different from the first direction. In addition, the dielectric wall structure includes a bottom portion and a cap layer formed over the bottom portion. The semiconductor structure also includes an isolation feature vertically overlapping the cap layer of the dielectric wall structure and a gate structure formed around the channel structures and covering a sidewall of the isolation feature.

Abstract: An antenna module is disposed to an electronic device includes a fixed member, a rotating component, a reflector, a director, and an antenna unit. The electronic device includes a first body and a second body. The first body has a first surface and a second surface. The fixed member is disposed to the first body fixedly. The rotating component is connected to the fixed member rotatably. The reflector and the director are disposed to the rotating component. The antenna unit is disposed to the first body and between the reflector and the director. When the first body and the second body rotate relative to each other, the reflector is located between the antenna unit and one of the first surface and the second surface, and the director is located between the antenna unit and another one of the first surface and the second surface.

Abstract: A semiconductor device includes a first gate structure extending along a first lateral direction. The semiconductor device includes a first interconnect structure, disposed above the first gate structure, that extends along a second lateral direction perpendicular to the first lateral direction. The first interconnect structure includes a first portion and a second portion electrically isolated from each other by a first dielectric structure. The semiconductor device includes a second interconnect structure, disposed between the first gate structure and the first interconnect structure, that electrically couples the first gate structure to the first portion of the first interconnect structure. The second interconnect structure includes a recessed portion that is substantially aligned with the first gate structure and the dielectric structure along a vertical direction.

Abstract: A device includes: a stack of semiconductor nanostructures; a gate structure wrapping around the semiconductor nanostructures, the gate structure extending in a first direction; a source/drain region abutting the gate structure and the stack in a second direction transverse the first direction; a contact structure on the source/drain region; a backside conductive trace under the stack, the backside conductive trace extending in the second direction; a first through via that extends vertically from the contact structure to a top surface of the backside dielectric layer; and a gate isolation structure that abuts the first through via in the second direction.

Abstract: During operation, an access point may provide a first WLAN and a second WLAN, where the first WLAN uses a WPA2-compatible authentication protocol and the second WLAN uses a WPA3-compatible authentication protocol. In response to an association request or a probe request associated with (or from) an electronic device, the access point may establish a connection with the electronic device using the first WLAN. Then, the access point may confirm, with a computer system, that a binding between a passphrase associated with the electronic device and the second WLAN exists. Alternatively, when the binding does not exist, the access point may establish the binding in the computer system. Next, the access point may perform a BSS transition of the electronic device from the first WLAN to the second WLAN.

Abstract: In an embodiment, a method of forming a structure includes forming a first transistor and a second transistor over a first substrate; forming a front-side interconnect structure over the first transistor and the second transistor; etching at least a backside of the first substrate to expose the first transistor and the second transistor; forming a first backside via electrically connected to the first transistor; forming a second backside via electrically connected to the second transistor; depositing a dielectric layer over the first backside via and the second backside via; forming a first conductive line in the dielectric layer, the first conductive line being a power rail electrically connected to the first transistor through the first backside via; and forming a second conductive line in the dielectric layer, the second conductive line being a signal line electrically connected to the second transistor through the second backside via.

Abstract: A memory device includes a programming transistor and a reading transistor of an anti-fuse memory cell. The programming transistor includes first semiconductor nanostructures vertically spaced apart from one another, each of the first semiconductor nanostructures having a first width along a first lateral direction. The reading transistor includes second semiconductor nanostructures vertically spaced apart from one another, each of the second semiconductor nanostructures having a second width different from the first width along the second direction. The memory device also includes a first and a second gate metals. The first gate metal wraps around each of the first semiconductor nanostructures with a first gate dielectric disposed therein. The second gate metal wraps around each of the second semiconductor nanostructures with a second gate dielectric disposed therein.

Abstract: A device includes a first semiconductor strip and a second semiconductor strip extending longitudinally in a first direction, where the first semiconductor strip and the second semiconductor strip are spaced apart from each other in a second direction. The device also includes a power supply line located between the first semiconductor strip and the second semiconductor strip. A top surface of the power supply line is recessed in comparison to a top surface of the first semiconductor strip. A source feature is disposed on a source region of the first semiconductor strip, and a source contact electrically couples the source feature to the power supply line. The source contact includes a lateral portion contacting a top surface of the source feature, and a vertical portion extending along a sidewall of the source feature towards the power supply line to physically contact the power supply line.

Abstract: A semiconductor device includes a substrate, a stack of semiconductor nanosheets, a dielectric wall, and a gate structure. The substrate includes a nanosheet mesa, and the stack of semiconductor nanosheets is disposed on the nanosheet mesa. The dielectric wall crosses through the nanosheet mesa and the stack of semiconductor nanosheets. The gate structure wraps the stack of semiconductor nanosheets and crosses over the dielectric wall, wherein a top of the dielectric wall has a recess.

Abstract: A circuit protection device includes a first temperature sensitive resistor, a second temperature sensitive resistor, an electrically insulating multilayer, a first and second electrode layer, and at least one external electrode. The first temperature sensitive resistor and the second temperature sensitive resistor are electrically connected in parallel, and have a first upper electrically conductive layer and a second lower electrically conductive layer, respectively. The electrically insulating multilayer includes an upper insulating layer, a middle insulating layer, and a lower insulating layer. The upper insulating layer is between the first upper electrically conductive layer and the first electrode layer. The middle layer is laminated between the first temperature sensitive resistor and the second temperature sensitive resistor. The lower insulating layer is between the second lower electrically conductive layer and the second electrode layer.

Abstract: An integrated inductor is provided. The integrated inductor includes a first winding and a second winding, and has a first end, a second end, and a node. The first winding utilizes the first end and the node as two ends thereof and includes a first coil and a second coil, which do not overlap. The second winding utilizes the second end and the node as two ends thereof and includes a third coil and a fourth coil, which do not overlap. The first coil and the third coil have an overlapping area, and the second coil and the fourth coil have an overlapping area. The first coil is surrounded by the third coil, and the fourth coil is surrounded by the second coil.

Abstract: A wearable device includes a main body and a band body. The opposite sides of the main body are provided with a tail portion and a hook portion, respectively. An open groove is provided between the hook portion and other parts of the main body. One end of the band body is connected to the tail portion. The band body enters the open groove from an open side of the open groove and is folded back around the hook portion. The other end of the band body is fixed to a part of the band body, so that the band body is coupled to the hook portion, and the band body is adapted to fix the main body to a subject.