Abstract: A device and a method for calculating a swinging direction of a human face in an obscured human face image are provided. The method includes the following. An obscured human face image including a human face is captured. Non-obscured face detection technology is used to obtain a feature anchor point to be replaced in the obscured human face image, obscured face detection technology is used to obtain a plurality of candidate feature anchor points in the obscured human face image, and the plurality of candidate feature anchor points are used to determine an updated feature anchor point corresponding to the feature anchor point to be replaced. An adjustment operation is performed on a three-dimensional model to obtain an adjusted three-dimensional model. The updated feature anchor point and the adjusted three-dimensional model are used to calculate a swinging direction of the human face.

Abstract: The presently claimed invention relates to compositions and methods for inhibition of etching. The presently claimed invention particularly relates to a composition and methods for inhibition of tungsten etching.

Abstract: A blockchain-based distributed network is disclosed which includes a plurality of moveable devices coupled to each other by a shortrange wireless channel, one or more ground systems coupled to the shortrange wireless channel, and one or more data centers coupled to the one or more ground systems via a long-range channel, each of the devices coupled to the shortrange wireless channel including an onboard system adapted to i) receive one or more blockchains; ii) verify authenticity of the one or more blockchains; iii) update data based on the verified one or more blockchains; iv) select one of the one or more blockchains; v) append a new block to last block of the selected blockchain; and vi) broadcast the appended blockchain, the one or more ground systems adapted to relay information from and to the plurality of moveable devices to and from the one or more data centers.

Abstract: A blockchain-based distributed network is disclosed which includes a plurality of moveable devices coupled to each other by a shortrange wireless channel, one or more ground systems coupled to the shortrange wireless channel, and one or more data centers coupled to the one or more ground systems via a long-range channel, each of the devices coupled to the shortrange wireless channel including an onboard system adapted to i) receive one or more blockchains; ii) verify authenticity of the one or more blockchains; iii) update data based on the verified one or more blockchains; iv) select one of the one or more blockchains; v) append a new block to last block of the selected blockchain; and vi) broadcast the appended blockchain, the one or more ground systems adapted to relay information from and to the plurality of moveable devices to and from the one or more data centers.

Abstract: A method for chemical mechanical polishing of a substrate comprising ruthenium and copper is provided wherein the substrate is contacted with a polishing slurry containing an abrasive, hypochlorite, a copolymer of acrylic acid and methacrylic acid, benzotriazole, poly(methyl vinyl ether) and a non-ionic surfactant at a pH of 9 to 11.

Abstract: A method for chemical mechanical polishing of a substrate comprising ruthenium and copper.

Abstract: A method for preparing a prostaglandin F analogue represented by the following formula (I) is disclosed, wherein R1, and are as defined in the specification.

Abstract: A method for fabricating a carbon nanotube field emitter array is disclosed, which has the steps of (a) providing a substrate; (b) forming a cathode layer having a first pattern on the substrate; (c) forming an opaque insulating layer having a second pattern on the substrate, wherein a predetermined part of the cathode layer is exposed; (d) forming a gate layer having the second pattern on the opaque insulating layer; (e) forming a carbon nanotube layer on the entire top surface of the substrate; and (f) exposing the carbon nanotube layer to a light beam coming from the backside of the substrate.

Abstract: In a first aspect, a valve assembly is provided that includes a valve assembly output adapted to output at least one of DI water and a chemical. A first valve of the valve assembly includes (1) a first input adapted to receive the chemical; (2) a first output adapted to circulate the chemical to a chemical return; and (3) a second output adapted to output the chemical to the valve assembly output. The valve assembly also includes a second valve positioned downstream from the first valve. The second valve includes (1) an input adapted to receive deionized (DI) water; and (2) an output adapted to output DI water to the valve assembly output. A check valve is coupled between the second output of the first valve and the output of the second valve, and the first valve, second valve and check valve are included in a single manifold.

Abstract: A method of transferring imprint carbon nano-tube (CNT) field emitting source is disclosed. Firstly, cathode lines are screen printed on a substrate. Then a dielectric layer formation on the cathode lines and substrate is followed. Afterward, gate lines formed on the dielectric layer by screen printing are performed. Next a patterning process is carried out to form openings. Subsequently, an imprint negative mold is dipped with CNT paste and imprinted the CNT paste on the cathode lines through the openings. After drawing of pattern from the imprint mold, the CNT paste is cured by annealing. Since the emitting sources are formed through the imprint negative mold, as a result, the size and shape can be predetermined. Moreover, the intervals between gate line and the emitting source are readily control, which resolve the circuit short problem between gate and cathode. Consequently, the current density, brightness, and uniformity of the emitter sources are significantly improved.

Abstract: A structure of a coplanar gate-cathode of triode CNT-FED and a manufacturing method thereof by Imprint Lithography and ink jet. The structure includes a substrate, a plurality of cathode layers, a plurality of gate extended layers, a plastic dielectric layer, a plurality of dielectric openings, and a plurality of gate electrodes. The plurality of cathode layers and the plurality of gate extended layers are coplanar, and formed on the substrate by Imprint Lithography and the plurality of dielectric openings are made by Imprint Lithography. The gate electrode, made by ink jet or screen print, can be extended through the plastic dielectric layer to the gate extended electrode to feature the coplanar gate-cathode.

Abstract: A structure of a coplanar gate-cathode of triode CNT-FED and a manufacturing method thereof by Imprint Lithography and ink jet. The structure includes a substrate, a plurality of cathode layers, a plurality of gate extended layers, a plastic dielectric layer, a plurality of dielectric openings, and a plurality of gate electrodes. The plurality of cathode layers and the plurality of gate extended layers are coplanar, and formed on the substrate by Imprint Lithography and the plurality of dielectric openings are made by Imprint Lithography. The gate electrode, made by ink jet or screen print, can be extended through the plastic dielectric layer to the gate extended electrode to feature the coplanar gate-cathode.

Abstract: The present inventions provide a structure of coplanar gate-cathode of triode CNT-FED and the manufacturing method thereof by Imprint Lithography and ink jet. The structure includes a substrate, a plurality of cathode layers, a plurality of gate extended layers, a plastic dielectric layer, a plurality of dielectric openings, and a plurality of gate electrodes. The plurality of cathode layers and the plurality of gate extended layers are coplanar, made by forming on the substrate by Imprint Lithography and the plurality of dielectric opening made by Imprint Lithography too. Besides, the gate electrode, made by ink jet or screen print, can be extended through the plastic dielectric layer to the gate extended electrode to feature the coplanar gate-cathode.

Abstract: The present inventions provide a structure of coplanar gate-cathode of triode CNT-FED and the manufacturing method thereof by Imprint Lithography and ink jet. The structure includes a substrate, a plurality of cathode layers, a plurality of gate extended layers, a plastic dielectric layer, a plurality of dielectric openings, and a plurality of gate electrodes. The plurality of cathode layers and the plurality of gate extended layers are coplanar, made by forming on the substrate by Imprint Lithography and the plurality of dielectric opening made by Imprint Lithography too. Besides, the gate electrode, made by ink jet or screen print, can be extended through the plastic dielectric layer to the gate extended electrode to feature the coplanar gate-cathode.

Abstract: An organic integrated device for thin film transistor and light emitting diode. The organic integrated device of the present invention includes a top-gate organic thin film transistor (top-gate OTFT) and an organic light emitting diode (OLED), both formed on the same substrate. In the organic integrated device, some layers can be commonly used by both OTFT and OLED, and some layers can be made of the same material and formed in the same course, which simplifies the entire process.

Abstract: A method for fabricating a carbon nanotube field emitter array is disclosed, which has the steps of (a) providing a substrate; (b) forming a cathode layer having a first pattern on the substrate; (c) forming an opaque insulating layer having a second pattern on the substrate, wherein a predetermined part of the cathode layer is exposed; (d) forming a gate layer having the second pattern on the opaque insulating layer; (e) forming a carbon nanotube layer on the entire top surface of the substrate; and (f) exposing the carbon nanotube layer to a light beam coming from the backside of the substrate.

Abstract: A method of transferring imprint carbon nano-tube (CNT) field emitting source is disclosed. Firstly, cathode lines are screen printed on a substrate. Then a dielectric layer formation on the cathode lines and substrate is followed. Afterward, gate lines formed on the dielectric layer by screen printing are performed. Next a patterning process is carried out to form openings. Subsequently, an imprint negative mold is dipped with CNT paste and imprinted the CNT paste on the cathode lines through the openings. After drawing of pattern from the imprint mold, the CNT paste is cured by annealing. Since the emitting sources are formed through the imprint negative mold, as a result, the size and shape can be predetermined. Moreover, the intervals between gate line and the emitting source are readily control, which resolve the circuit short problem between gate and cathode. Consequently, the current density, brightness, and uniformity of the emitter sources are significantly improved.

Abstract: A triode structure of a field emission display is manufactured with thick-film technology. The triode structure includes a cathode electrode layer that comprises a metallic catalyst. Isomeric carbon emitters can be grown on the cathode electrode layer by CVD process at a low temperature because of the metallic catalyst. Instead of mixing the metallic catalyst in the cathode electrode layer, a metallic catalyst layer can be formed on the cathode electrode layer to facilitate the growth of the isomeric carbon emitters. The combination of thick film technology and low temperature CVD process provide a low cost method for fabricating a large area field emission display with isomeric carbon emitters.