Abstract: A lifting control apparatus may include: a base for holding a basket containing silicon wafers; brackets provided on an outside of both ends of the base; and a driver for driving the brackets to move up and down. The driver is provided with a lead screw. The lead screw is connected with the bracket on a same side. The lead screw on one side is driven to rotate the lead screw on another side synchronously, and the lead screws on both sides are driven to move the brackets on both sides and the base between the brackets up and down together. Or the lead screws on both sides are driven to rotate synchronously, so that the lead screws on both sides drive the base between the brackets through the correspondingly brackets to move up and down together.

Abstract: A silicon wafer sorting mechanism includes a wafer distribution unit, a sorting unit, and a transmission unit disposed sequentially. The sorting unit includes a sorting table with one terminal hinged to the wafer distribution unit. The sorting table rotates and tilts with a point where the sorting table is hinged to the wafer distribution unit. The sorting table and the transmission unit are arranged up and down in dislocation or the sorting table is placed horizontally against the transmission unit, thereby forming two transmission lines in different directions to sort silicon wafers of different types.

Abstract: An apparatus for supplying cleaning liquid may include: a stock solution unit configured with a plurality of stock solution tanks; a cleaning unit configured with a plurality of cleaning tanks; and a transfer unit disposed between the stock solution unit and the cleaning unit. The transfer unit is configured with a plurality of independent transfer tanks. Each of the stock solution tanks communicates with at least one of the transfer tanks, each of the transfer tanks communicates with one of the cleaning tanks, and each of the cleaning tanks communicates with at least one of the transfer tanks.

Abstract: The present application discloses a memory, a memory system, and a method for operating memory, which belongs to the memory techniques field. The method for operating memory comprises determining a storage state of a reference memory cell, determining a discharge duration of a sensing node corresponding to a target memory cell based on the storage state of the reference memory cell, and reading the target memory cell based on the discharge duration of the sensing node corresponding to the target memory cell to obtain read results. The target memory cell and the reference memory cell are located in the same string and are adjacent, and the programming order of the reference memory cell is after that of the target memory cell. The present application may reduce the influence on reading memory cells by interlayer interference and improve the accuracy of reading memory cells.

Abstract: According to one embodiment of the present disclosure, there is provided a copper foil including a copper film including 99.9 wt % or more of copper, wherein the copper foil has a first weight retention rate of 0.1% or less, and a second weight retention rate of 0.3% or less.

Abstract: According to one embodiment of the present disclosure, there is provided a copper foil including a copper film including 99.9 wt % or more of copper, wherein the copper foil has a room temperature MIT 1 of 280 or more, a high-temperature MIT 1 of 130 or more, a room temperature MIT 2 of 14 or more, and a high-temperature MIT 2 of 25 or more. The room temperature MIT 1 refers to an MIT number when a bending radius (R) is 0.38 mm at room temperature, the high-temperature MIT 1 refers to an MIT number when a bending radius (R) is 0.38 mm after heat treatment at 190° C. for one hour, the room temperature MIT 2 refers to an MIT number when a bending radius (R) is 0.1 mm at room temperature, and the high-temperature MIT 2 refers to an MIT number when a bending radius (R) is 0.1 mm after heat treatment at 190° C. for one hour.

Abstract: According to one embodiment of the present disclosure, there is provided a copper foil including a copper film including 99.9 wt % or more of copper, wherein the copper film has an A-value in a range of 1.1 to 1.6. “A” is calculated by Equation 1 below, A = P / Q [ Equation ? 1 ] wherein “P” in Equation 1 is a peak intensity at 1650 cm?1 of the copper film, “Q” in Equation 1 is a peak intensity at 1460 cm?1 of the copper film, and the peak intensity is measured by Fourier-transform infrared spectroscopy (FT-IR).

Abstract: According to one embodiment of the present disclosure, there is provided a copper foil including a copper film including 99.9 wt % or more of copper, wherein the copper foil has a first stress factor in a range of 2.8 to 3.2, a second stress factor in a range of 2.5 to 3.0, and a third stress factor in a range of 3.5 to 4.5, and a method for manufacturing the copper foil.

Abstract: According to one embodiment of the present disclosure, there is provided a copper foil including a copper film including 99.9 wt % or more of copper, wherein the copper film has a room temperature loss factor of 0.05 or less, wherein the room temperature loss factor is calculated by Equation 1 below, room temperature loss factor=room temperature loss modulus/room temperature storage modulus.

Abstract: According to one embodiment of the present disclosure, there is provided a copper foil including a copper film including 99.9 wt % or more of copper, and a protective layer formed on the copper film, wherein the copper foil has a room temperature puncture strength in a range of 5.0 N to 7.0 N, and a high-temperature puncture strength in a range of 8.0 N to 12.5 N. At this time, the high-temperature puncture strength is a puncture strength measured after heat treatment at 190° C. for one hour.

Abstract: According one embodiment of the present disclosure, there is provided a copper foil including a copper film including 99.9 wt % or more of copper, and a protective layer formed on the copper film, wherein the copper foil has a tensile strength index of 3.0 kgf/mm2 or less, and an elongation index of 2.1% or less.

Abstract: According to one embodiment of the present disclosure, there is provided a copper foil including a copper film including 99.9 wt % or more of copper, and a protective layer formed on the copper film, wherein the copper foil has a room temperature water contact angle in a range of 60° to 70°, and a room temperature surface resistivity in a range of 2.4 m?/cm to 2.7 m?/cm.

Abstract: According to one embodiment of the present disclosure, there is provided a copper foil including a copper film having 99.9 wt % or more of copper, wherein the copper foil has a color difference coefficient in a range of 0.38 to 0.7 based on the Lab color system.

Abstract: According to one embodiment of the present disclosure, there is provided a copper foil including a copper film including 99.9 wt % or more of copper, and having an R value in a range of 2.0 to 3.5.

Abstract: The present invention relates to the technical field of biomedicine, in particular to a sulfoximide substituted indazole compound, an isomer thereof, or a pharmaceutically acceptable salt thereof.

Abstract: The present invention features fusion polypeptides comprising an RNA binding polypeptide operationally linked to an RNA modifying enzyme (e.g., adenosine deaminase, cytidine deaminase), and methods of use therefore.

Abstract: Provided is an accurate, fast and long-term stable fused CRAP. The electrode includes a positioning anchor, a silicone catheter, a sensor compartment and a connecting wire. The method monitors physiological information such as blood PPG, blood oxygen saturation, temperature and impedance of blood in the right ventricular cavity, and monitors blood temperature information, which is also a slowly changing metabolic rate, to provide cross-comparison with blood oxygen saturation information, improving monitoring accuracy of blood oxygen saturation. The rapidly changing right ventricular apical impedance information is monitored to improve rapid response ability of CRAP. The LEDs driving current is dynamically adjusted by monitoring the internal temperature of the PPG sensor and the impedance change of the attached biological tissue, which indirectly reflects thickness change of the attached biological tissue, thereby delaying the failure time of the PPG sensor.

Abstract: The present invention relates to the technical field of biomedicine, particularly to a pyridine sulfonamide phosphate compound, a preparation method therefor, and a use thereof. The invention provides the following technical benefits: the pyridine sulfonamide phosphate compound has characteristics of high solubility, high stability, ease of being made into preparations, etc., which is easy to be industrially scaled up for medical use.

Abstract: The present disclosure discloses a multi-path image processing apparatus. An image merging circuit is configured to receive image frames that at least one of the image frames has a largest row number, generate redundant pixel row for each of the image frames that has a row number smaller than the largest row number such that the row number of each of the image frames equals to the largest row number, generate redundant pixel columns for each of the image frames having the number thereof determined by a size of a largest operation window, and merge each two of the image frames through the redundant columns thereof to generate a merged image frame. An image processing circuit performs image processing procedure on the merged image frame to generate a processed merged image frame, wherein at least a part of the image processing procedure is operated according to the largest operation window. An image segmentation circuit segments the processed merged image frame to generate processed image frames.

Abstract: The present invention relates to an electrolytic copper foil having excellent handling characteristics in the manufacture of copper foil and in post-processing for manufacturing a secondary battery. The present invention provides an electrolytic copper foil having a first surface and a second surface, wherein the texture coefficient of the (220) plane of the electrolytic copper foil is 0.4-1.32, the difference (|?(Rz/Ra)|) between Rz/Ra on the first surface and Rz/Ra on the second surface, of the electrolytic copper foil, is less than 2.42, and the difference (|?PD|) in peak density (PD) between the first surface and the second surface, of the electrolytic copper foil, is 96 ea or less.