Abstract: Embodiments of the present disclosure are directed to a system for monitoring moving and stepping silicon wafers and a method adopts the system. The system includes a first sensing element to monitor whether a gap between adjacent silicon wafers exists, and a second sensing element to monitor whether two silicon wafers are laminated. The first sensing element and the second sensing element are both disposed in a slot where the silicon wafers are turned over, and suspended on a front side of a sorting wheel in the slot and obliquely arranged towards one side of the sorting wheel. The system installed in the narrow space between the cleaning tank and the sorting tank has simple structure and is capable of quickly and accurately monitoring the silicon wafer turnover, and accurately determining whether there is a continuous or laminated silicon wafer during the silicon wafer turnover process.

Abstract: The present disclosure provides a signal transmission method and a signal transmission device. The signal transmission method includes: transmitting a first reference signal, the first reference signal indicating that the first network device is subjected to remote interference; and receiving a second reference signal, the second reference signal indicating that there is the remote interference and/or atmospheric ducting phenomenon.

Abstract: A metal organic framework glass membrane and a preparation method thereof are provided. The preparation method includes a step of heating a crystalline metal organic framework material to the melting temperature at a rate of 1-15° C./min and then naturally cooling the crystalline metal organic framework material. The crystalline metal organic framework material contains a metal node and a ligand A. The metal node is a zinc ion and/or a cobalt ion and the ligand A is imidazole or phosphoric acid. The metal organic framework glass membrane has a wide range of membrane-forming conditions, and the material thereof can be melted without being decomposed within a control range to form a continuous glass layer with good repeatability.

Abstract: A silicon wafer transfer auxiliary device includes blowpipes disposed on a side of a sorting wheel. Nozzles of the blowpipes are inclined towards the side of the sorting wheel. The blowpipes are capable of spraying liquid or gas towards a silicon wafer during transfer to increase an adsorption force between the silicon wafer and the sorting wheel and to successfully complete a turning of the silicon wafer from a vertical direction to a side close to the sorting wheel.

Abstract: An anti-DLL3 antibody and a pharmaceutical use thereof, and an antibody-drug conjugate containing the anti-DLL3 antibody. The present disclosure relates to an anti-DLL3 antibody-ecteinascidin drug conjugate represented by general formula (Pc-L-D), wherein Pc is the anti-DLL3 antibody.

Abstract: Provided are an antigen-binding molecule specifically binding to PSMA and CD3, and a pharmaceutical use thereof. The antigen-binding molecule can be used for treating tumor-related diseases.

Abstract: A liquid storage tank may include a body with an inner cavity, wherein a first liquid storage area and a second liquid storage area are provided in the body, and a partition is provided between the first liquid storage area and the second liquid storage area. A heater for heating solution is provided in the first liquid storage area. A liquid outlet is provided in the second liquid storage area.

Abstract: A lifting control apparatus may include: a base for holding a basket containing silicon wafers; brackets provided on an outside of both ends of the base; and a driver for driving the brackets to move up and down. The driver is provided with a lead screw. The lead screw is connected with the bracket on a same side. The lead screw on one side is driven to rotate the lead screw on another side synchronously, and the lead screws on both sides are driven to move the brackets on both sides and the base between the brackets up and down together. Or the lead screws on both sides are driven to rotate synchronously, so that the lead screws on both sides drive the base between the brackets through the correspondingly brackets to move up and down together.

Abstract: The present application discloses a memory, a memory system, and a method for operating memory, which belongs to the memory techniques field. The method for operating memory comprises determining a storage state of a reference memory cell, determining a discharge duration of a sensing node corresponding to a target memory cell based on the storage state of the reference memory cell, and reading the target memory cell based on the discharge duration of the sensing node corresponding to the target memory cell to obtain read results. The target memory cell and the reference memory cell are located in the same string and are adjacent, and the programming order of the reference memory cell is after that of the target memory cell. The present application may reduce the influence on reading memory cells by interlayer interference and improve the accuracy of reading memory cells.

Abstract: A silicon wafer sorting mechanism includes a wafer distribution unit, a sorting unit, and a transmission unit disposed sequentially. The sorting unit includes a sorting table with one terminal hinged to the wafer distribution unit. The sorting table rotates and tilts with a point where the sorting table is hinged to the wafer distribution unit. The sorting table and the transmission unit are arranged up and down in dislocation or the sorting table is placed horizontally against the transmission unit, thereby forming two transmission lines in different directions to sort silicon wafers of different types.

Abstract: An apparatus for supplying cleaning liquid may include: a stock solution unit configured with a plurality of stock solution tanks; a cleaning unit configured with a plurality of cleaning tanks; and a transfer unit disposed between the stock solution unit and the cleaning unit. The transfer unit is configured with a plurality of independent transfer tanks. Each of the stock solution tanks communicates with at least one of the transfer tanks, each of the transfer tanks communicates with one of the cleaning tanks, and each of the cleaning tanks communicates with at least one of the transfer tanks.

Abstract: According to one embodiment of the present disclosure, there is provided a copper foil including a copper film including 99.9 wt % or more of copper, wherein the copper foil has a first weight retention rate of 0.1% or less, and a second weight retention rate of 0.3% or less.

Abstract: According to one embodiment of the present disclosure, there is provided a copper foil including a copper film including 99.9 wt % or more of copper, wherein the copper foil has a room temperature MIT 1 of 280 or more, a high-temperature MIT 1 of 130 or more, a room temperature MIT 2 of 14 or more, and a high-temperature MIT 2 of 25 or more. The room temperature MIT 1 refers to an MIT number when a bending radius (R) is 0.38 mm at room temperature, the high-temperature MIT 1 refers to an MIT number when a bending radius (R) is 0.38 mm after heat treatment at 190° C. for one hour, the room temperature MIT 2 refers to an MIT number when a bending radius (R) is 0.1 mm at room temperature, and the high-temperature MIT 2 refers to an MIT number when a bending radius (R) is 0.1 mm after heat treatment at 190° C. for one hour.

Abstract: According to one embodiment of the present disclosure, there is provided a copper foil including a copper film including 99.9 wt % or more of copper, wherein the copper film has an A-value in a range of 1.1 to 1.6. “A” is calculated by Equation 1 below, A = P / Q [ Equation ? 1 ] wherein “P” in Equation 1 is a peak intensity at 1650 cm?1 of the copper film, “Q” in Equation 1 is a peak intensity at 1460 cm?1 of the copper film, and the peak intensity is measured by Fourier-transform infrared spectroscopy (FT-IR).

Abstract: According to one embodiment of the present disclosure, there is provided a copper foil including a copper film including 99.9 wt % or more of copper, wherein the copper foil has a first stress factor in a range of 2.8 to 3.2, a second stress factor in a range of 2.5 to 3.0, and a third stress factor in a range of 3.5 to 4.5, and a method for manufacturing the copper foil.

Abstract: According to one embodiment of the present disclosure, there is provided a copper foil including a copper film including 99.9 wt % or more of copper, wherein the copper film has a room temperature loss factor of 0.05 or less, wherein the room temperature loss factor is calculated by Equation 1 below, room temperature loss factor=room temperature loss modulus/room temperature storage modulus.

Abstract: According to one embodiment of the present disclosure, there is provided a copper foil including a copper film including 99.9 wt % or more of copper, and a protective layer formed on the copper film, wherein the copper foil has a room temperature puncture strength in a range of 5.0 N to 7.0 N, and a high-temperature puncture strength in a range of 8.0 N to 12.5 N. At this time, the high-temperature puncture strength is a puncture strength measured after heat treatment at 190° C. for one hour.

Abstract: According one embodiment of the present disclosure, there is provided a copper foil including a copper film including 99.9 wt % or more of copper, and a protective layer formed on the copper film, wherein the copper foil has a tensile strength index of 3.0 kgf/mm2 or less, and an elongation index of 2.1% or less.

Abstract: According to one embodiment of the present disclosure, there is provided a copper foil including a copper film including 99.9 wt % or more of copper, and a protective layer formed on the copper film, wherein the copper foil has a room temperature water contact angle in a range of 60° to 70°, and a room temperature surface resistivity in a range of 2.4 m?/cm to 2.7 m?/cm.

Abstract: According to one embodiment of the present disclosure, there is provided a copper foil including a copper film having 99.9 wt % or more of copper, wherein the copper foil has a color difference coefficient in a range of 0.38 to 0.7 based on the Lab color system.