Abstract: A semiconductor device and method of manufacture is provided including a redistribution structure; a plurality of core substrates attached to the redistribution structure using conductive connectors, each core substrate of the plurality of core substrates comprising a plurality of conductive posts; and one or more molding layers encapsulating the plurality of core substrates, where the one or more molding layers extends along sidewalls of the plurality of core substrates, and where the one or more molding layers extends along a portion of a sidewall of each of the conductive posts.

Abstract: An integrated circuit package that includes symmetrical redistribution structures on either side of a core substrate is provided. In an embodiment, a device comprises a core substrate, a first redistribution structure comprising one or more layers, a second redistribution comprising one or more layers, a first integrated circuit die, and a set of external conductive features. The core substrate is disposed between the first redistribution structure and the second redistribution structure, the first integrated circuit die is disposed on the first distribution structure on the opposite side from the core substrate; and the set of external conductive features are disposed on a side of the second redistribution structure opposite the core substrate. The first redistribution structure and second redistribution structure have symmetrical redistribution layers to each other with respect to the core substrate.

Abstract: The application provides a wireless communication method and a wireless communication device. A part of payload is pre-fetched from a host to a data buffer under a store-and-forward mode before transmission begins. When data transmission begins, the part of the payload pre-fetched in the data buffer is transmitted to an antenna. A remaining part of the payload is fetched to the data buffer under a cut-through mode for payload transmission, wherein the remaining part of the payload is sent from the data buffer to the antenna for radiation.

Abstract: A display panel including a substrate, a light emitting structure layer, a C-plate, and a first bandpass polarizing reflective layer is provided. The light emitting structure layer is disposed on the substrate and includes first light emitting structures. The first light emitting structures have a first peak emission wavelength. The C-plate is disposed on a side of the light emitting structure layer away from the substrate. The first bandpass polarizing reflective layer is disposed between the light emitting structure layer and the C-plate and overlapped with the light emitting structure layer. A reflectance of the first bandpass polarizing reflective layer for light with a wavelength in a first wavelength range is greater than 20%. The first wavelength range is the first peak emission wavelength±20 nm.

Abstract: A semiconductor package and methods of forming the same are disclosed. In an embodiment, a package includes a substrate; a first die disposed within the substrate; a redistribution structure over the substrate and the first die; and an encapsulated device over the redistribution structure, the redistribution structure coupling the first die to the encapsulated device.

Abstract: A joint orthosis assembly includes a web, an arm unit, a strap unit, and at least one fastening subassembly. The web has three web portions for being wrapped on an upper limb structure, a lower limb structure, and a joint between the upper and lower limb structures, respectively. The arm unit is retained on the web and includes two arms which are pivotally connected, and which are for being disposed at lateral sides of the upper and lower limb structures, respectively. The strap unit includes two straps each being wound about the web to be coupled between the two arms. The fastening subassembly is configured to permit an end of at least one of the straps to be turnably coupled to a corresponding one of arms.

Abstract: The present disclosure provides a fast charging driver. The fast charging driver is configured to charge a battery of an electronic device. The fast charging driver includes a fast charging circuit and a charging controller. The fast charging circuit includes a first depletion-type GaN transistor, a first enhancement-type field effect transistor, a second depletion-type GaN transistor and a second enhancement-type field effect transistor. The charging controller is configured to control the fast charging circuit to operate in a constant current mode or a constant voltage mode according to a battery level of the battery. By utilizing the first depletion-type GaN transistor and the second depletion-type GaN transistor with a characteristic of a relatively low switching loss, the power consumption during charging the battery by the fast charging driver is decreased to improve the charge speed.

Abstract: A semiconductor package includes an interconnect structure including a redistribution structure, an insulating layer over the redistribution structure, and conductive pillars on the insulating layer, wherein the conductive pillars are connected to the redistribution structure, wherein the interconnect structure is free of active devices, a routing substrate including a routing layer over a core substrate, wherein the interconnect structure is bonded to the routing substrate by solder joints, wherein each of the solder joints bonds a conductive pillar of the conductive pillars to the routing layer, an underfill surrounding the conductive pillars and the solder joints, and a semiconductor device including a semiconductor die connected to a routing structure, wherein the routing structure is bonded to an opposite side of the interconnect structure as the routing substrate.

Abstract: A method includes placing a wafer on a wafer holder, depositing a film on a front surface of the wafer, and blowing a gas through ports in a redistributor onto a back surface of the wafer at a same time the deposition is performed. The gas is selected from a group consisting of nitrogen (N2), He, Ne, and combinations thereof.

Abstract: Embodiments provide a high aspect ratio via for coupling a top electrode of a vertically oriented component to the substrate, where the top electrode of the component is coupled to the via by a conductive bridge, and where the bottom electrode of the component is coupled to substrate. Some embodiments provide for mounting the component by a component wafer and separating the components while mounted to the substrate. Some embodiments provide for mounting individual components to the substrate.

Abstract: A structure including a photonic integrated circuit die, an electric integrated circuit die, a semiconductor dam, and an insulating encapsulant is provided. The photonic integrated circuit die includes an optical input/output portion and a groove located in proximity of the optical input/output portion, wherein the groove is adapted for lateral insertion of at least one optical fiber. The electric integrated circuit die is disposed over and electrically connected to the photonic integrated circuit die. The semiconductor dam is disposed over the photonic integrated circuit die. The insulating encapsulant is disposed over the photonic integrated circuit die and laterally encapsulates the electric integrated circuit die and the semiconductor dam.

Abstract: A method includes attaching interconnect structures to a carrier substrate, wherein each interconnect structure includes a redistribution structure; a first encapsulant on the redistribution structure; and a via extending through the encapsulant to physically and electrically connect to the redistribution structure; depositing a second encapsulant on the interconnect structures, wherein adjacent interconnect structures are laterally separated by the second encapsulant; after depositing the second encapsulant, attaching a first core substrate to the redistribution structure of at least one interconnect structure, wherein the core substrate is electrically connected to the redistribution structure; and attaching semiconductor devices to the interconnect structures, wherein the semiconductor devices are electrically connected to the vias of the interconnect structures.

Abstract: A method of forming a semiconductor device includes attaching a metal foil to a carrier, the metal foil being pre-made prior to attaching the metal foil; forming a conductive pillar on a first side of the metal foil distal the carrier; attaching a semiconductor die to the first side of the metal foil; forming a molding material around the semiconductor die and the conductive pillar; and forming a redistribution structure over the molding material.

Abstract: Provided are human polyclonal immunoglobulin products for use in treating or preventing coronavirus disease. Further provided are methods for making such compositions in a transgenic ungulate, e.g. using a transchromosomic bovine (TcB) system.

Abstract: A method includes forming a redistribution structure on a carrier substrate, coupling a first side of a first interconnect structure to a first side of the redistribution structure using first conductive connectors, where the first interconnect structure includes a core substrate, where the first interconnect structure includes second conductive connectors on a second side of the first interconnect structure opposite the first side of the first interconnect structure, coupling a first semiconductor device to the second side of the first interconnect structure using the second conductive connectors, removing the carrier substrate, and coupling a second semiconductor device to a second side of the redistribution structure using third conductive connectors, where the second side of the redistribution structure is opposite the first side of the redistribution structure.

Abstract: Some embodiments of the disclosure provide a method for calibrating extrusion parameters in an additive manufacturing system. In some examples, the method includes the following steps. (1) Executing extrusion commands and printing a plurality of tracks based on one or more printing templates at different extrusion rates. (2) Scanning the plurality of tracks to obtain at least one image of the plurality of tracks. (3) Processing the at least one image of the plurality of tracks to obtain geometry information. (4) Generating a printing model based on the geometry information and the extrusion commands. (5) Evaluating the printing model. (6) If the printing error result is within the pre-defined threshold, adopting the printing model as a reference for choosing extrusion parameters at a given extrusion rate. (7) If the printing error result is not within the pre-defined threshold, repeating steps (1)-(6).

Abstract: A method includes forming a package, which includes an optical die and a protection layer attached to the optical die. The optical die includes a micro lens, with the protection layer and the micro lens being on a same side of the optical die. The method further includes encapsulating the package in an encapsulant, planarizing the encapsulant to reveal the protection layer, and removing the protection layer to form a recess in the encapsulant. The optical die is underlying the recess, with the micro lens facing the recess.

Abstract: A method for handling a semiconductor substrate includes: placing a semiconductor substrate over a semiconductor apparatus, where a central portion of the semiconductor substrate overlies a carrying surface of a chuck table of the semiconductor apparatus, an edge portion of the semiconductor substrate overlies a top surface of a first flexible member of the semiconductor apparatus, the first flexible member is disposed within a recess of the chuck table and extends along a perimeter of the carrying surface, and a gap forms among the semiconductor substrate, the carrying surface of the chuck table, and the top surface of the first flexible member; and introducing a vacuum in vacuum holes in the chuck table to form a vacuum seal among the semiconductor substrate, the chuck table, and the first flexible member.

Abstract: A method includes forming a device region over a substrate; forming a first dielectric layer over the device region; forming an opening in the first dielectric layer; conformally depositing a first conductive material along sidewalls and bottom surfaces of the opening; depositing a second conductive material on the first conductive material to fill the opening, wherein the second conductive material is different from the first conductive material; and performing a first thermal process to form an interface region extending from a first region of the first conductive material to a second region of the second conductive material, wherein the interface region includes a homogeneous mixture of the first conductive material and the second conductive material.