Abstract: A method of forming a semiconductor device includes depositing a p-type semiconductor layer over a portion of a semiconductor substrate, depositing a semiconductor layer over the p-type semiconductor layer, wherein the semiconductor layer is free from p-type impurities, forming a gate stack directly over a first portion of the semiconductor layer, and etching a second portion of the semiconductor layer to form a trench extending into the semiconductor layer. At least a surface of the p-type semiconductor layer is exposed to the trench. A source/drain region is formed in the trench. The source/drain region is of n-type.

Abstract: A method includes forming a composite material layer over a carrier, the composite material layer including particles of a filler material incorporated into a base material, forming a set of through vias over a first side of the composite material layer, attaching a die over the first side of the composite material layer, the die being spaced apart from the set of through vias, forming a molding material over the first side of the composite material layer, the molding material least laterally encapsulating the die and the through vias of the set of through vias, forming a redistribution structure over the die and the molding material, the redistribution structure electrically connected to the through vias, forming openings in a second side of the composite material layer opposite the first side, and forming conductive connectors in the openings, the conductive connectors electrically connected to the through vias.

Abstract: A method for forming a chip package structure is provided. The method includes providing an electrical substrate and a photonic substrate over and bonded to the electrical substrate. The method includes partially removing the dielectric structure to form a first through hole and a second through hole in the dielectric structure. The first through hole passes through the dielectric structure and exposes the first wiring layer. The method includes forming a first conductive via structure and a second conductive via structure in the first through hole and the second through hole respectively. The first conductive via structure is in direct contact with the first wiring layer, and the second conductive via structure is spaced apart from the first wiring layer.

Abstract: Embodiments of the present disclosure relate to a semiconductor device with lowered source/drain regions to reduce channel resistance (Rch) and source/drain contact resistance loading.

Abstract: A semiconductor device includes a first Chip-On-Wafer (CoW) device having a first interposer and a first die attached to a first side of the first interposer; a second CoW device having a second interposer and a second die attached to a first side of the second interposer, the second interposer being laterally spaced apart from the first interposer; and a redistribution structure extending along a second side of the first interposer opposing the first side of the first interposer and extending along a second side of the second interposer opposing the first side of the second interposer, the redistribution structure extending continuously from the first CoW device to the second CoW device.

Abstract: Provided herein are compositions and methods for the multiplexed profiling of RNA and DNA modifications across transcriptomes and genomes, respectively. The methods combine molecular recognition of non-canonical features (e.g., base modifications, backbone modifications, lesions, and/or structural elements) of a target nucleic acid with a step of writing the information from this recognition event into the neighboring genetic sequence of the target nucleic acid using a barcode. The resultant barcoded nucleic acids are then converted into sequencing libraries and read by DNA/RNA sequencing methods. This step reveals the sequence of the barcode, which is correlated with the non-canonical feature in the target nucleic acid(s). The high throughput profiling methods described herein allow for identification and/or localization of one or more modifications in a target nucleic acid. The methods also allow for identification of the nature and location of several or all DNA/RNA modifications in parallel.

Abstract: Optical devices and methods of manufacture are presented herein. In an embodiment, an apparatus is provided that includes a notch filter, an optical signal detector positioned adjacent to the notch filter, and a mirror positioned to adjacent to the notch filter.

Abstract: A package includes a redistribution structure that includes conductive features and first waveguides; first dies and second dies attached to the redistribution structure, wherein the first dies are different than the second dies, wherein the first dies are electrically connected to respectively corresponding second dies through the redistribution structure; and optical bridge structures attached to the redistribution structure, wherein the optical bridge structures are optically coupled to the first waveguides, wherein the optical bridge structures are electrically connected to respectively corresponding first dies and respectively corresponding second dies through the redistribution structure.

Abstract: A chip package includes a semiconductor die laterally encapsulating by an insulating encapsulant, a first dielectric portion, conductive vias, conductive traces and a second dielectric portion. The first dielectric portion covers the semiconductor die and the encapsulant. The conductive vias penetrate through the first dielectric portion and electrically connected to the semiconductor die. The conductive traces are disposed on the first dielectric portion. The second dielectric portion is disposed on the first dielectric portion and covering the conductive traces, wherein a first minimum lateral width of a conductive trace among the conductive traces is smaller than a second minimum lateral width of a conductive via among the conductive vias. A method of forming the chip package is also provided.

Abstract: A package structure and method for forming the same are provided. The package structure includes a top interposer formed over a substrate, and a first die formed over the top interposer. The first die includes an optical package structure, and the optical package structure includes first optical components. The first die also includes an electronic die bonded to the optical package structure to form a hybrid bonding structure. The hybrid bonding structure includes a metal-to-metal bonding and dielectric-to-dielectric bonding. The package structure includes an optical die adjacent to the first die, and the top interposer is shared by the optical die and the first die.

Abstract: A semiconductor device includes a redistribution structure, an integrated circuit package attached to a first side of the redistribution structure and a core substrate coupled to a second side of the redistribution structure with a first conductive connector and a second conductive connector. The second side is opposite the first side. The semiconductor device further includes a top layer of the core substrate including a dielectric material and a chip disposed between the redistribution structure and the core substrate. The chip is interposed between sidewalls of the dielectric material.

Abstract: Provided is an electronic package, in which a heat dissipating body is formed on an electronic device and is combined with a heat sink so that the electronic device, the heat dissipating body and the heat sink form a receiving space, and a heat dissipating material is formed in the receiving space and in contact with the heat sink and the electronic device, where a fluid regulating space is formed between the heat dissipating material and the heat dissipating body and is used as a volume regulating space for the heat dissipating material during thermal expansion and contraction.

Abstract: A semiconductor device includes a first interconnect structure, a device layer, a second interconnect structure, a diamond layer, a passivation layer, and an electrical connector. The device layer is disposed over the first interconnect structure. The second interconnect structure is disposed over the device layer and comprises a topmost metallization pattern. The diamond layer is disposed over the second interconnect structure and at least revealing a part of the topmost metallization pattern. The passivation layer covers the diamond layer and reveals the part of the topmost metallization pattern. The electrical connector is disposed over the passivation layer and bonded to the part of the topmost metallization pattern.

Abstract: In an embodiment, a device includes: a first wafer including a first substrate and a first interconnect structure, a sidewall of the first interconnect structure forming an obtuse angle with a sidewall of the first substrate; and a second wafer bonded to the first wafer, the second wafer including a second substrate and a second interconnect structure, the sidewall of the first substrate being laterally offset from a sidewall of the second substrate and a sidewall of the second interconnect structure.

Abstract: The present disclosure relates to a system that is operable to receive an execution plan and execute a control operation on one or more equipment based operations within the execution plan. The one or more operations may include a data capturing operation associated with a resource site. In one embodiment, the system may be operable to execute at least a first operation in response to a success variable of the data capturing operation indicating a successful execution of the data capturing operation. The first operation may include a quality control operation that is executed by comparing at least one characteristic of the captured data to an expected characteristic to generate quality state data. The quality state data may have one of an acceptable status and an undesirable status. In response to the quality state data indicating an acceptable status for the quality control operation, executing at least a second operation.

Abstract: A semiconductor device structure and a formation method are provided. The method includes receiving a substrate, and the substrate has a dielectric layer and a semiconductor layer over the dielectric layer. The method also includes forming a p-type doped region and an n-type doped region in the semiconductor layer. The method further includes partially removing the semiconductor layer and the dielectric layer to form a recess exposing portions of the p-type doped region and the n-type doped region. In addition, the method includes forming a photo-sensing structure over sidewalls of the recess, and the photo-sensing structure is spaced apart from a bottom of the recess.

Abstract: A semiconductor device structure and a formation method are provided. The method includes forming a p-type doped structure and an n-type doped structure. The method also includes forming a photo-sensing structure, and a portion of the photo-sensing structure is between the p-type doped structure and the n-type doped structure. The method further includes forming a semiconductor cap over the photo-sensing structure. The semiconductor cap is p-type doped.

Abstract: A photonic device and a manufacturing method thereof are provided. The photonic device includes an oxide layer, a first waveguide structure and a semiconductor-insulator-capacitor modulator. The oxide layer has a first surface and a second surface opposite to the first surface. The first waveguide structure is formed on the first surface of the oxide layer. The semiconductor-insulator-capacitor modulator is formed on the second surface of the oxide layer. The semiconductor-insulator-capacitor modulator includes a first terminal, a second terminal and a capacitor dielectric layer. The first terminal is optically connected with the first waveguide structure. The capacitor dielectric layer is disposed between the first terminal and the second terminal.

Abstract: The present disclosure provides compositions and methods that employ the compositions for conducting pairwise sequencing and for generating concatemer template molecules for pairwise sequencing. The concatemers can be generated using a rolling circle amplification reaction which is conducted either on-support, or conducted in-solution and then distributed onto a support. The rolling circle amplification reaction generates concatemers containing tandem copies of a sequence of interest and at least one universal adaptor sequence. An increase in the number of tandem copies in a given concatemer increases the number of sites along the concatemer for hybridizing to multiple sequencing primers which serve as multiple initiation sites for polymerase-catalyzed sequencing reactions. When the sequencing reaction employs detectably labeled nucleotides and/or detectably labeled multivalent molecules (e.g.

Abstract: Optical devices and methods of manufacture are presented in which optical interposers are embedded within interposers. In some embodiments a method includes embedding an optical interposer into an interposer with one or more waveguides, with or without other semiconductor devices, and then bonding one or more semiconductor devices onto the interposer.