Patents by Inventor Huai-Yu Cheng
Huai-Yu Cheng has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20190115393Abstract: A voltage sensitive switching device is described having a superlattice-like cell structure comprising layers of ovonic materials, such as chalcogenide alloys. Memory cells can include the switching device, such as can be utilized in a cross-point memory.Type: ApplicationFiled: October 18, 2017Publication date: April 18, 2019Applicant: MACRONIX INTERNATIONAL CO., LTD.Inventors: Huai-Yu CHENG, Hsiang-Lan LUNG, I-Ting KUO
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Publication number: 20180331284Abstract: A memory access device that includes a first terminal with a first terminal workfunction and a chalcogenide-based selector layer with a first surface and a second surface opposite the first surface. A first control metal layer is positioned in physical and electrical contact with the first terminal and the first surface of the chalcogenide-based selector layer. The first control metal layer includes a first control workfunction different than the first terminal workfunction. A second terminal with a second terminal workfunction is positioned proximate the second surface of the chalcogenide-based selector layer.Type: ApplicationFiled: May 9, 2017Publication date: November 15, 2018Inventors: Matthew J. BrightSky, Fabio Carta, Huai-Yu Cheng, Wanki Kim
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Patent number: 10050196Abstract: Phase change memory materials in a dielectric-doped, antimony-rich GST family of materials which are antimony rich relative to GST-225, are described that have speed, retention and endurance characteristics suitable for storage class data storage A memory device includes an array of memory cells, where each memory cell includes a first electrode and a second electrode coupled to a memory element. The memory element comprises a body of phase change memory material that comprises a combination of Ge, Sb, and Te with a dielectric additive in amounts effective to provide a crystallization transition temperature greater than to 160° C., greater that 170° C. in some effective examples and greater than 190° C. in other effective examples. A controller is coupled to the array, and configured to execute set operations and reset operations for memory cells in the array.Type: GrantFiled: May 4, 2017Date of Patent: August 14, 2018Assignee: MACRONIX INTERNATIONAL CO., LTD.Inventors: Huai-Yu Cheng, Hsiang-Lan Lung
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Patent number: 9917252Abstract: A Ga—Sb—Ge family of phase change memory materials is described, including GaxSbyGez, wherein a Ga atomic concentration x is within a range from 20% to 45%, a Sb atomic concentration y is within a range from 25% to 40% and a Ge atomic concentration z is within a range from 25% to 55%, is described wherein the material has a crystallization transition temperature Tx greater than 360° C. Adding impurities including one or more element selected from silicon Si, carbon C, oxygen O and nitrogen N, can also increase the crystallization transition temperature Tx to temperatures greater than 400° C., and also reduce reset current.Type: GrantFiled: November 9, 2015Date of Patent: March 13, 2018Assignee: MACRONIX INTERNATIONAL CO., LTD.Inventors: Huai-Yu Cheng, Hsiang-Lan Lung
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Patent number: 9882126Abstract: A phase change storage device, Integrated Circuit (IC) chip including the devices and method of manufacturing IC chips with the devices. The device includes a phase change storage region with multiple phase change regions, e.g., two (2), of different phase change material serially-connected between said program/read line and a select device conduction terminal.Type: GrantFiled: April 9, 2016Date of Patent: January 30, 2018Assignees: International Business Machines Corporation, Macronix International Co. LtdInventors: Matthew J. BrightSky, Huai-Yu Cheng, Wei-Chih Chien, Sangbum Kim, Chiao-Wen Yeh
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Publication number: 20170294578Abstract: A phase change storage device, Integrated Circuit (IC) chip including the devices and method of manufacturing IC chips with the devices. The device includes a phase change storage region with multiple phase change regions, e.g., two (2), of different phase change material serially-connected between said program/read line and a select device conduction terminal.Type: ApplicationFiled: April 9, 2016Publication date: October 12, 2017Applicants: International Business Machines Corporation, Macronix International Co., LtdInventors: Matthew J. BrightSky, Huai-Yu Cheng, Wei-Chih Chien, Sangbum Kim, Chiao-Wen Yeh
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Publication number: 20170263863Abstract: A phase change memory device with a composite memory element includes first and second layers of memory materials, and the composite memory element has a basis phase change material, such as a chalcogenide, and one or more additives, where the first layer of memory material is formed using oxygen-free atmosphere and the second layer of memory material is formed using oxygen-containing atmosphere. The use of “oxygen-free” atmosphere can prevent oxidation at the electrode surface of the first electrode.Type: ApplicationFiled: March 14, 2016Publication date: September 14, 2017Applicants: MACRONIX INTERNATIONAL CO., LTD., INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Hsiang-Lan LUNG, Huai-Yu CHENG, Matthew J. BRIGHTSKY
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Patent number: 9653683Abstract: A phase change memory cell. The phase change memory cell includes a substrate and a phase change material. The phase change material is deposited on the substrate for performing a phase change function in the phase change memory cell. The phase change material is an alloy having a mass density change of less than three percent during a transition between an amorphous phase and a crystalline phase.Type: GrantFiled: December 30, 2015Date of Patent: May 16, 2017Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, MACRONIX INTERNATIONAL COMPANY, LTD.Inventors: Huai-Yu Cheng, Simone Raoux
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Publication number: 20160372661Abstract: A Ga—Sb—Ge family of phase change memory materials is described, including GaxSbyGez, wherein a Ga atomic concentration x is within a range from 20% to 45%, a Sb atomic concentration y is within a range from 25% to 40% and a Ge atomic concentration z is within a range from 25% to 55%, is described wherein the material has a crystallization transition temperature Tx greater than 360° C. Adding impurities including one or more element selected from silicon Si, carbon C, oxygen O and nitrogen N, can also increase the crystallization transition temperature Tx to temperatures greater than 400° C., and also reduce reset current.Type: ApplicationFiled: November 9, 2015Publication date: December 22, 2016Applicant: MACRONIX INTERNATIONAL CO., LTD.Inventors: HUAI-YU CHENG, HSIANG-LAN LUNG
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Publication number: 20160118582Abstract: A phase change memory cell. The phase change memory cell includes a substrate and a phase change material. The phase change material is deposited on the substrate for performing a phase change function in the phase change memory cell. The phase change material is an alloy having a mass density change of less than three percent during a transition between an amorphous phase and a crystalline phase.Type: ApplicationFiled: December 30, 2015Publication date: April 28, 2016Inventors: Huai-Yu Cheng, Simone Raoux
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Patent number: 9257643Abstract: A phase change memory cell. The phase change memory cell includes a substrate and a phase change material. The phase change material is deposited on the substrate for performing a phase change function in the phase change memory cell. The phase change material is an alloy having a mass density change of less than three percent during a transition between an amorphous phase and a crystalline phase.Type: GrantFiled: August 16, 2013Date of Patent: February 9, 2016Assignees: INTERNATIONAL BUSINESS MACHINES CORPORATION, MACRONIX INTERNATIONAL COMPANY, LTD.Inventors: Huai-Yu Cheng, Simone Raoux
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Patent number: 9214229Abstract: A family of phase change materials GewSbxTeyNz having a crystallization temperature greater than 410° C., wherein a Ge atomic concentration is within a range from 43% to 54%, a Sb atomic concentration is within a range from 6% to 13%, a Te atomic concentration is within a range from 14% to 23%, and a N atomic concentration is within a range of 15% to 27%, is described. A method for programming a memory device including such phase change materials is also described.Type: GrantFiled: June 19, 2014Date of Patent: December 15, 2015Assignee: Macronix International Co., Ltd.Inventors: Huai-Yu Cheng, Hsiang-Lan Lung, Che-Min Lin
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Publication number: 20150048291Abstract: A phase change memory cell. The phase change memory cell includes a substrate and a phase change material. The phase change material is deposited on the substrate for performing a phase change function in the phase change memory cell. The phase change material is an alloy having a mass density change of less than three percent during a transition between an amorphous phase and a crystalline phase.Type: ApplicationFiled: August 16, 2013Publication date: February 19, 2015Applicants: Macronix International Company, Ltd., INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Huai-Yu Cheng, Simone Raoux
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Patent number: 8946666Abstract: A phase change material comprises GexSbyTez, wherein a Ge atomic concentration x is within a range from 30% to 65%, a Sb atomic concentration y is within a range from 13% to 27% and a Te atomic concentration z is within a range from 20% to 45%. A Ge-rich family of such materials is also described. A memory device, suitable for integrated circuits, comprising such materials is described.Type: GrantFiled: December 15, 2011Date of Patent: February 3, 2015Assignees: Macronix International Co., Ltd., International Business Machines CorporationInventors: Huai-Yu Cheng, Hsiang-Lan Lung, Simone Raoux, Yen-Hao Shih, Matthew J. Breitwisch
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Patent number: 8932901Abstract: A memory device includes a substrate and a memory array on the substrate. The memory array includes memory cells including stressed phase change materials in a layer of encapsulation materials. The memory cells may include memory cell structures such as mushroom-type memory cell structures, bridge-type memory cell structures, active-in-via type memory cell structures, and pore-type memory cell structures. The stressed phase change materials may comprise GST (GexSbxTex) materials in general and Ge2Sb2Te5 in particular. To manufacture the memory device, a substrate is first fabricated. Memory cells including phase change materials in a layer of encapsulation materials are formed on a front side of the substrate. A tensile or compressive stress is induced into the phase change materials on the front side of the substrate.Type: GrantFiled: April 19, 2012Date of Patent: January 13, 2015Assignee: Macronix International Co., Ltd.Inventor: Huai-Yu Cheng
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Publication number: 20140376309Abstract: A family of phase change materials GewSbxTeyNz having a crystallization temperature greater than 410° C., wherein a Ge atomic concentration is within a range from 43% to 54%, a Sb atomic concentration is within a range from 6% to 13%, a Te atomic concentration is within a range from 14% to 23%, and a N atomic concentration is within a range of 15% to 27%, is described. A method for programming a memory device including such phase change materials is also described.Type: ApplicationFiled: June 19, 2014Publication date: December 25, 2014Applicant: Macronix International Co., Ltd.Inventors: HUAI-YU CHENG, HSIANG-LAN LUNG, CHE-MIN LIN
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Patent number: 8916414Abstract: To form a memory cell with a phase change element, a hole is formed through an insulator to a bottom electrode, and a phase change material is deposited on the insulator surface covering the hole. A confining structure is formed over the phase change material so the phase change material expands into the hole when heated to melting to become electrically connected to the bottom electrode. A top electrode is formed over and electrically connects to the phase change material. The bottom electrode can include a main portion and an extension having a reduced lateral dimension. The confining structure can include capping material having a higher melting temperature than the phase change material, and sufficient tensile strength to ensure the phase change material moves into the hole when the phase change material melts and expands. The hole can be a J shaped hole.Type: GrantFiled: September 26, 2013Date of Patent: December 23, 2014Assignee: Macronix International Co., Ltd.Inventors: Huai-Yu Cheng, Hsiang-Lan Lung
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Publication number: 20140264240Abstract: To form a memory cell with a phase change element, a hole is formed through an insulator to a bottom electrode, and a phase change material is deposited on the insulator surface covering the hole. A confining structure is formed over the phase change material so the phase change material expands into the hole when heated to melting to become electrically connected to the bottom electrode. A top electrode is formed over and electrically connects to the phase change material. The bottom electrode can include a main portion and an extension having a reduced lateral dimension. The confining structure can include capping material having a higher melting temperature than the phase change material, and sufficient tensile strength to ensure the phase change material moves into the hole when the phase change material melts and expands. The hole can be a J shaped hole.Type: ApplicationFiled: September 26, 2013Publication date: September 18, 2014Applicant: Macronix International Co., Ltd.Inventors: Huai-Yu CHENG, Hsiang-Lan LUNG
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Patent number: 8772747Abstract: A layer of phase change material with silicon or another semiconductor, or a silicon-based or other semiconductor-based additive, is formed using a composite sputter target including the silicon or other semiconductor, and the phase change material. The concentration of silicon or other semiconductor is more than five times greater than the specified concentration of silicon or other semiconductor in the layer being formed. For silicon-based additive in GST-type phase change materials, sputter target may comprise more than 40 at % silicon. Silicon-based or other semiconductor-based additives can be formed using the composite sputter target with a flow of reactive gases, such as oxygen or nitrogen, in the sputter chamber during the deposition.Type: GrantFiled: April 22, 2013Date of Patent: July 8, 2014Assignees: Macronix International Co., Ltd., International Business Machines CorporationInventors: Huai-Yu Cheng, Chieh-Fang Chen, Hsiang-Lan Lung, Yen-Hao Shih, Simone Raoux, Matthew J. Breitwisch
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Publication number: 20130234093Abstract: A layer of phase change material with silicon or another semiconductor, or a silicon-based or other semiconductor-based additive, is formed using a composite sputter target including the silicon or other semiconductor, and the phase change material. The concentration of silicon or other semiconductor is more than five times greater than the specified concentration of silicon or other semiconductor in the layer being formed. For silicon-based additive in GST-type phase change materials, sputter target may comprise more than 40 at % silicon. Silicon-based or other semiconductor-based additives can be formed using the composite sputter target with a flow of reactive gases, such as oxygen or nitrogen, in the sputter chamber during the deposition.Type: ApplicationFiled: April 22, 2013Publication date: September 12, 2013Applicants: INTERNATIONAL BUSINESS MACHINES CORPORATION, MACRONIX INTERNATIONAL CO., LTD.Inventors: HUAI-YU CHENG, CHIEH-FANG CHEN, HSIANG-LAN LUNG, YEN-HAO SHIH, SIMONE RAOUX, MATTHEW J. BREITWISCH