Patents by Inventor Huang Chao-Yuan

Huang Chao-Yuan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Integrated structure with a silicon-through via
    Patent number: 8957504
    Abstract: An integrated structure with a silicon-through via includes a substrate, a through-silicon via penetrating the substrate, a conductive protective structure surrounding the through-silicon via and a first and a second conductive dummy patterns with different shapes disposed between the through-silicon via and the conductive protective structure.
    Type: Grant
    Filed: March 15, 2013
    Date of Patent: February 17, 2015
    Assignee: IP Enval Consultant Inc.
    Inventors: Huang Chao-Yuan, Ho Yueh-Feng, Yang Ming-Sheng, Chen Hwi-Huang
  • An Integrated Structure with a Silicon-Through Via
    Publication number: 20140264916
    Abstract: An integrated structure with a silicon-through via comprises a substrate, a through-silicon via penetrating the substrate, a conductive protective structure surrounding the through-silicon via and a first and a second conductive dummy patterns with different shapes disposed between the through-silicon via and the conductive protective structure.
    Type: Application
    Filed: March 15, 2013
    Publication date: September 18, 2014
    Inventors: Huang Chao-Yuan, Ho Yueh-Feng, Yang Ming-Sheng, Chen Hwi-Huang