Patents by Inventor Huang-Ming Chen
Huang-Ming Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10312089Abstract: Embodiments of the present disclosure may be used for patterning a layer in a 5 nm node or beyond fabrication to achieve an end-to-end distance below 35 nm. Compared to the state of the art technology, embodiments of the present disclosure reduce cycle time and cost of production from three lithographic processes and four etching processes to one lithographic process and three etch processes.Type: GrantFiled: March 16, 2018Date of Patent: June 4, 2019Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yu-Lien Huang, Tsai-Chun Li, Huan-Just Lin, Huang-Ming Chen, Yang-Cheng Wu, Cheng-Hua Yang
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Publication number: 20190164759Abstract: Embodiments of the present disclosure may be used for patterning a layer in a 5 nm node or beyond fabrication to achieve an end-to-end distance below 35 nm. Compared to the state of the art technology, embodiments of the present disclosure reduce cycle time and cost of production from three lithographic processes and four etching processes to one lithographic process and three etch processes.Type: ApplicationFiled: March 16, 2018Publication date: May 30, 2019Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Yu-Lien HUANG, Tsai-Chun LI, Huan-Just LIN, Huang-Ming CHEN, Yang-Cheng WU, Cheng-Hua YANG
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Publication number: 20170207167Abstract: A device includes a conductive layer including a bottom portion, and a sidewall portion over the bottom portion, wherein the sidewall portion is connected to an end of the bottom portion. An aluminum-containing layer overlaps the bottom portion of the conductive layer, wherein a top surface of the aluminum-containing layer is substantially level with a top edge of the sidewall portion of the conductive layer. An aluminum oxide layer is overlying the aluminum-containing layer. A copper-containing region is over the aluminum oxide layer, and is spaced apart from the aluminum-containing layer by the aluminum oxide layer. The copper-containing region is electrically coupled to the aluminum-containing layer through the top edge of the sidewall portion of the conductive layer.Type: ApplicationFiled: April 3, 2017Publication date: July 20, 2017Inventors: Li-Lin Su, Ching-Hua Hsieh, Huang-Ming Chen, Hsueh Wen Tsau
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Patent number: 9653594Abstract: A system and method for forming and using a liner is provided. An embodiment comprises forming an opening in an inter-layer dielectric over a substrate and forming the liner along the sidewalls of the opening. A portion of the liner is removed from a bottom of the opening, and a cleaning process may be performed through the liner. By using the liner, damage to the sidewalls of the opening from the cleaning process may be reduced or eliminated. Additionally, the liner may be used to help implantation of ions within the substrate.Type: GrantFiled: February 1, 2016Date of Patent: May 16, 2017Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wen-Chi Tsai, Chia-Han Lai, Yung-Chung Chen, Mei-Yun Wang, Chii-Ming Wu, Fang-Cheng Chen, Huang-Ming Chen, Ming-Ta Lei
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Patent number: 9614052Abstract: A device includes a conductive layer including a bottom portion, and a sidewall portion over the bottom portion, wherein the sidewall portion is connected to an end of the bottom portion. An aluminum-containing layer overlaps the bottom portion of the conductive layer, wherein a top surface of the aluminum-containing layer is substantially level with a top edge of the sidewall portion of the conductive layer. An aluminum oxide layer is overlying the aluminum-containing layer. A copper-containing region is over the aluminum oxide layer, and is spaced apart from the aluminum-containing layer by the aluminum oxide layer. The copper-containing region is electrically coupled to the aluminum-containing layer through the top edge of the sidewall portion of the conductive layer.Type: GrantFiled: September 11, 2015Date of Patent: April 4, 2017Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Li-Lin Su, Ching-Hua Hsieh, Huang-Ming Chen, Hsueh Wen Tsau
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Patent number: 9525024Abstract: An embodiment is a method comprising diffusing carbon through a surface of a substrate, implanting carbon through the surface of the substrate, and annealing the substrate after the diffusing the carbon and implanting the carbon through the surface of the substrate. The substrate comprises a first gate, a gate spacer, an etch stop layer, and an inter-layer dielectric. The first gate is over a semiconductor substrate. The gate spacer is along a sidewall of the first gate. The etch stop layer is on a surface of the gate spacer and over a surface of the semiconductor substrate. The inter-layer dielectric is over the etch stop layer. The surface of the substrate comprises a surface of the inter-layer dielectric.Type: GrantFiled: July 21, 2015Date of Patent: December 20, 2016Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Chen Su, Huang-Ming Chen, Chun-Feng Nieh, Pei-Chao Su
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Publication number: 20160163847Abstract: A system and method for forming and using a liner is provided. An embodiment comprises forming an opening in an inter-layer dielectric over a substrate and forming the liner along the sidewalls of the opening. A portion of the liner is removed from a bottom of the opening, and a cleaning process may be performed through the liner. By using the liner, damage to the sidewalls of the opening from the cleaning process may be reduced or eliminated. Additionally, the liner may be used to help implantation of ions within the substrate.Type: ApplicationFiled: February 1, 2016Publication date: June 9, 2016Inventors: Wen-Chi Tsai, Chia-Han Lai, Yung-Chung Chen, Mei-Yun Wang, Chii-Ming Wu, Fang-Cheng Chen, Huang-Ming Chen, Ming-Ta Lei
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Publication number: 20160064517Abstract: A device includes a conductive layer including a bottom portion, and a sidewall portion over the bottom portion, wherein the sidewall portion is connected to an end of the bottom portion. An aluminum-containing layer overlaps the bottom portion of the conductive layer, wherein a top surface of the aluminum-containing layer is substantially level with a top edge of the sidewall portion of the conductive layer. An aluminum oxide layer is overlying the aluminum-containing layer. A copper-containing region is over the aluminum oxide layer, and is spaced apart from the aluminum-containing layer by the aluminum oxide layer. The copper-containing region is electrically coupled to the aluminum-containing layer through the top edge of the sidewall portion of the conductive layer.Type: ApplicationFiled: September 11, 2015Publication date: March 3, 2016Inventors: Li-Lin Su, Ching-Hua Hsieh, Huang-Ming Chen, Hsueh Wen Tsau
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Patent number: 9252019Abstract: A system and method for forming and using a liner is provided. An embodiment comprises forming an opening in an inter-layer dielectric over a substrate and forming the liner along the sidewalls of the opening. A portion of the liner is removed from a bottom of the opening, and a cleaning process may be performed through the liner. By using the liner, damage to the sidewalls of the opening from the cleaning process may be reduced or eliminated. Additionally, the liner may be used to help implantation of ions within the substrate.Type: GrantFiled: August 31, 2011Date of Patent: February 2, 2016Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wen-Chi Tsai, Chia-Han Lai, Yung-Chung Chen, Mei-Yun Wang, Chii-Ming Wu, Fang-Cheng Chen, Huang-Ming Chen, Ming-Ta Lei
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Publication number: 20150325644Abstract: An embodiment is a method comprising diffusing carbon through a surface of a substrate, implanting carbon through the surface of the substrate, and annealing the substrate after the diffusing the carbon and implanting the carbon through the surface of the substrate. The substrate comprises a first gate, a gate spacer, an etch stop layer, and an inter-layer dielectric. The first gate is over a semiconductor substrate. The gate spacer is along a sidewall of the first gate. The etch stop layer is on a surface of the gate spacer and over a surface of the semiconductor substrate. The inter-layer dielectric is over the etch stop layer. The surface of the substrate comprises a surface of the inter-layer dielectric.Type: ApplicationFiled: July 21, 2015Publication date: November 12, 2015Inventors: Yu-Chen Su, Huang-Ming Chen, Chun-Feng Nieh, Pei-Chao Su
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Patent number: 9136206Abstract: A device includes a conductive layer including a bottom portion, and a sidewall portion over the bottom portion, wherein the sidewall portion is connected to an end of the bottom portion. An aluminum-containing layer overlaps the bottom portion of the conductive layer, wherein a top surface of the aluminum-containing layer is substantially level with a top edge of the sidewall portion of the conductive layer. An aluminum oxide layer is overlying the aluminum-containing layer. A copper-containing region is over the aluminum oxide layer, and is spaced apart from the aluminum-containing layer by the aluminum oxide layer. The copper-containing region is electrically coupled to the aluminum-containing layer through the top edge of the sidewall portion of the conductive layer.Type: GrantFiled: July 25, 2012Date of Patent: September 15, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Li-Lin Su, Ching-Hua Hsieh, Huang-Ming Chen, Hsueh Wen Tsau
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Patent number: 9105570Abstract: An embodiment is a method comprising diffusing carbon through a surface of a substrate, implanting carbon through the surface of the substrate, and annealing the substrate after the diffusing the carbon and implanting the carbon through the surface of the substrate. The substrate comprises a first gate, a gate spacer, an etch stop layer, and an inter-layer dielectric. The first gate is over a semiconductor substrate. The gate spacer is along a sidewall of the first gate. The etch stop layer is on a surface of the gate spacer and over a surface of the semiconductor substrate. The inter-layer dielectric is over the etch stop layer. The surface of the substrate comprises a surface of the inter-layer dielectric.Type: GrantFiled: July 13, 2012Date of Patent: August 11, 2015Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Chen Su, Huang-Ming Chen, Chun-Feng Nieh, Pei-Chao Su
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Patent number: 8911822Abstract: A method of repairing a color filter and a pre-repair material used thereby are provided. The method includes the following steps. First, a color filter including a substrate and a color filter layer is provided, and the color filter layer having at least one defect pattern is disposed on the substrate. Then, a pre-repair layer is formed in the at least one defect pattern. After that, a repair layer is formed on the pre-repair layer, and the repair layer is connected to the substrate through the pre-repair layer.Type: GrantFiled: August 26, 2009Date of Patent: December 16, 2014Assignee: Chunghwa Picture Tubes, Ltd.Inventors: Feng-Chin Tang, Chi-Hsin Li, Wen-Jen Hsieh, Huang-Ming Chen
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Publication number: 20140027822Abstract: A device includes a conductive layer including a bottom portion, and a sidewall portion over the bottom portion, wherein the sidewall portion is connected to an end of the bottom portion. An aluminum-containing layer overlaps the bottom portion of the conductive layer, wherein a top surface of the aluminum-containing layer is substantially level with a top edge of the sidewall portion of the conductive layer. An aluminum oxide layer is overlying the aluminum-containing layer. A copper-containing region is over the aluminum oxide layer, and is spaced apart from the aluminum-containing layer by the aluminum oxide layer. The copper-containing region is electrically coupled to the aluminum-containing layer through the top edge of the sidewall portion of the conductive layer.Type: ApplicationFiled: July 25, 2012Publication date: January 30, 2014Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Li-Lin Su, Ching-Hua Hsieh, Huang-Ming Chen, Hsueh Wen Tsau
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Publication number: 20140015104Abstract: An embodiment is a method comprising diffusing carbon through a surface of a substrate, implanting carbon through the surface of the substrate, and annealing the substrate after the diffusing the carbon and implanting the carbon through the surface of the substrate. The substrate comprises a first gate, a gate spacer, an etch stop layer, and an inter-layer dielectric. The first gate is over a semiconductor substrate. The gate spacer is along a sidewall of the first gate. The etch stop layer is on a surface of the gate spacer and over a surface of the semiconductor substrate. The inter-layer dielectric is over the etch stop layer. The surface of the substrate comprises a surface of the inter-layer dielectric.Type: ApplicationFiled: July 13, 2012Publication date: January 16, 2014Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Yu-Chen Su, Huang-Ming Chen, Chun-Feng Nieh, Pei-Chao Su
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Publication number: 20130265289Abstract: A cholesteric liquid crystal display device includes a first substrate, a second substrate, a cholesteric liquid crystal layer and a plurality of nano particles. The first substrate includes a first alignment layer. The second substrate includes a second alignment layer. The cholesteric liquid crystal layer is disposed between the first and second alignment layers. The nano particles are disposed on a surface of one of the first and second alignment layers, and located between the one of the first and second alignment layers and the cholesteric liquid crystal layer.Type: ApplicationFiled: September 13, 2012Publication date: October 10, 2013Inventors: Yu-Hsien CHEN, Huang-Ming Chen, Sheng-Fa Liu, Mei-Tsao Chiang, Bao-Sian Ciou
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Patent number: 8529783Abstract: A method for preventing the formation of contaminating polymeric films on the backsides of semiconductor substrates includes providing an oxygen-impregnated focus ring and/or an oxygen-impregnated chuck that releases oxygen during etching operations. The method further provides delivering oxygen gas to the substrate by mixing oxygen in the cooling gas mixture, maintaining the focus ring at a temperature no greater than the substrate temperature during etching and cleaning the substrate using a two step plasma cleaning sequence that includes suspending the substrate above the chuck.Type: GrantFiled: March 30, 2010Date of Patent: September 10, 2013Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Huang-Ming Chen, Chun-Li Chou, Chao-Cheng Chen, Hun-Jan Tao
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Patent number: 8471055Abstract: The present invention relates to photo-crosslinkable liquid crystal monomers with optical activity. The liquid crystal monomers contains one chiral center with an acrylate group or terminal diacrylate groups, and terminal dibenzene rings are introduced in order to extend its hard segment for the purpose of getting a wider liquid crystalline phase. By introducing the liquid crystal monomers, the room temperature nematic liquid crystal or the cholesteric liquid crystal may have a better mutual solubility and a wider, steadier structure of liquid crystal.Type: GrantFiled: August 14, 2011Date of Patent: June 25, 2013Assignees: Chunghwa Picture Tubes, Ltd., National Chiao Tung UniversityInventors: Yu-hsien Chen, Sheng-fa Liu, Huai-an Li, Sin-min Fuh, Hong-cheu Lin, Huang-ming Chen, Po-jen Yang, Shin-chieh Chien
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Patent number: 8426795Abstract: An image display apparatus includes a screen, a reflection mirror, an adaptive optics, and a projection unit. The reflection mirror has a reflective surface facing a light incident surface of the screen, and is separated from the light incident surface by a space. The boundary of the space is defined by the edges of the reflective surface and the light incident surface. The adaptive optics is disposed on the boundary of the space. The projection unit is disposed outside the space. The adaptive optics has a light exit side facing the reflective surface of the reflection mirror, and a light incident side facing the projection unit. A projecting light is generated from the projection unit, passes through the adaptive optics for adjusting the image size formed by the projecting light, and then is projected to the reflective surface of the reflection mirror for being reflected to the light incident surface.Type: GrantFiled: December 8, 2009Date of Patent: April 23, 2013Assignee: Young Optics Inc.Inventors: Po-Jen Chung, Tien-Pao Chen, Huang-Ming Chen, Chu-Ming Cheng
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Publication number: 20130049219Abstract: A system and method for forming and using a liner is provided. An embodiment comprises forming an opening in an inter-layer dielectric over a substrate and forming the liner along the sidewalls of the opening. A portion of the liner is removed from a bottom of the opening, and a cleaning process may be performed through the liner. By using the liner, damage to the sidewalls of the opening from the cleaning process may be reduced or eliminated. Additionally, the liner may be used to help implantation of ions within the substrate.Type: ApplicationFiled: August 31, 2011Publication date: February 28, 2013Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Wen-Chi Tsai, Chia-Han Lai, Yung-Chung Chen, Mei-Yun Wang, Chii-Ming Wu, Fang-Cheng Chen, Huang-Ming Chen, Ming-ta Lei