Abstract: A semiconductor device includes a substrate on which an electronic circuit is provided. One or more pads may be present which can connect the electronic circuit to an external device outside the substrate. A current meter is electrically in contact with at least a part of the substrate and/or the pad. The meter can measure a parameter forming a measure for an amount of a current flowing between the substrate and at least one of the at least one pad. A control unit is connected to the current meter and the electronic circuit, for controlling the electronic circuit based on the measured parameter.

Abstract: A semiconductor device includes a substrate on which an electronic circuit is provided. Two or more pads may be present which can connect the electronic circuit to an external device outside the substrate. A current meter is electrically in contact with at least a part of the substrate and/or the pad. The meter can measure a parameter forming a measure for an aggregate amount of a current flowing between the substrate and said pads. A control unit is connected to the current meter and the electronic circuit, for controlling the electronic circuit based on the measured parameter.

Abstract: A circuit arrangement for detecting unwanted signals on a clock signal comprises an input for receiving the clock signal, and a Phase Lock Loop PLL circuit having a reference input coupled to the input of the circuit arrangement for receiving the clock signal and an output for providing a PLL output signal. The circuit arrangement further comprises a detector coupled to the output of the PLL circuit and to the input of the circuit arrangement. The detector is arranged to identify correct transitions in the clock signal using the PLL output signal, and to remove incorrect transitions due to unwanted signals from the clock signal so as to provide a filtered clock signal at an output of the circuit arrangement.

Abstract: A non-volatile memory device includes a voltage reference generator comprising a programmable voltage reference for generating a voltage signal having a programmable voltage level. In an embodiment, the programmable voltage reference provides the voltage signals for a wordline driver and/or a bitline current generator of the non-volatile memory device. The programmable voltage reference may comprise a Digital-to-Analog converter coupled between first and second supply voltages. A programmable current reference is also disclosed.

Abstract: A wordline driver, for a non-volatile memory device, comprises a wordline driver output, a first power source, adapted to provide an erase level voltage for erasing portions of the non-volatile memory device, a second power source, adapted to provide read and program level voltages for reading and programming portions of the non-volatile memory device and first switching means, including an isolation transistor, adapted to connect the wordline driver output to a one of the first and second power sources dependent upon an operating mode of the wordline driver. The wordline driver further comprises a programmable switch controller for providing a variable control signal to a control electrode of the isolation transistor. The programmable switch controller is arranged to set the variable control signal to a value dependent upon the operating parameters of the non-volatile memory device and such that the endurance of the isolation transistor is maximised.